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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

First observation of currents induced by Alfven eigenmodes in a magnetic confinement device

Instabilities driven by energetic particles normally reduce fusion power but recent studies find Alfven eigenmode instabilities can drive ``zonal" flows and currents that reduce thermal transport, improving overall performance. Motional Stark effect (MSE) data from the DIII-D tokamak reveal changes in magnetic pitch angle during the phase when Alfven-eigenmode nonlinearity drives zonal flows, suppresses microturbulence, and increases the electron and ion temperatures. Finally, measured changes in safety factor of ∆q/q ≃ 5% occur in roughly 20 ms, consistent with a rough estimate based on the measured zonal flow.

Heidbrink, W. W. [Univ. of California, Irvine, CA ↗
DOE OSTI2025

Time-Domain Extreme-Ultraviolet Diffuse Scattering Spectroscopy of Nanoscale Surface Phonons

Here, we report the observation of dynamic fringe patterns in the diffuse scattering of extreme ultraviolet light from surfaces, following femtosecond optical excitation. At each point on the detector, the diffuse scattering intensity exhibits oscillations at well-defined frequencies that correspond to surface phonons with wave vectors determined by the scattering geometry, indicating that the optical excitation generates coherent surface phonons propagating in all directions and spanning a wavelength range from 60 to 300 nm. This phenomenon is observed on a variety of samples, including single-layer and multilayer metal films, as well as bulk semiconductors. The measured surface phonon dispersions show good agreement with theoretical calculations. By comparing signal amplitudes from samples with different surface morphologies, we find that the excitation mechanism is linked to the natural surface roughness of the samples. However, the signal is still detectable on extremely smooth surfaces with subnanometer roughness. Our findings demonstrate a simple and effective method for optically exciting coherent surface phonons with nanoscale wavelengths on a wide range of solid samples and establish a foundation for surface phonon spectroscopy in a wave vector range well beyond the limit of conventional surface Brillouin scattering.

Capotondi, F. [Elettra-Sincrotrone Trieste (Italy)↗
DOE OSTI2026

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Acoustic Radiation From a Superconducting Qubit: From Spontaneous Emission to Rabi Oscillations

Hybrid quantum systems that utilize controllable coupling between phonons and superconducting qubits could pave the way for a new generation of compact quantum memories and sensor technologies. However, the same electromechanical interaction mechanisms that enable coherent qubit-phonon coupling can also lead to decoherence due to the spontaneous phonon emission. In this paper we study the dynamics of a qubit coupled to an acoustic resonator by a piezoelectric film. By varying the surface topography of the resonator from rough to flat to shaped, we explore the crossover from fast decay of an excited qubit to quantum-coherent coupling between the qubit and an isolated phonon mode. The developed theoretical model allows us to establish and check quantitative links between the results obtained for the rough and shaped topographies. Discrepancy between the theory and the data for the flat resonator points to the imperfections of the studied device. Our experimental approach may be used for precision measurements of crystalline vibrations, the design of quantum memories, and the study of electromechanical contributions to dielectric loss.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Low leakage current in heteroepitaxial Al 0.7 Sc 0.3 N ferroelectric films on Ga N

Wurtzite ( Al , Sc ) N ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as Ga N and ( Al , Ga ) N . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial Al 0.7 Sc 0.3 N films on Ga N with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A cm − 2 ) than previously reported films (1–19 A cm − 2 ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial ( Al , Sc ) N films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported ( Al , Sc ) N films. To support this conclusion, we show that Al 0.7 Sc 0.3 N on lattice-matched In 0.18 Ga 0.82 N buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial ( Al , Sc ) N films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗
DOE OSTI2021

The Radar Echo Telescope for Cosmic Rays: Pathfinder experiment for a next-generation neutrino observatory

The Radar Echo Telescope for Cosmic Rays (RET-CR) is a recently funded experiment designed to detect the englacial cascade of a cosmic ray-initiated air shower via in-ice radar, toward the goal of a full-scale, next-generation experiment to detect ultrahigh energy neutrinos in polar ice. For cosmic rays with a primary energy greater than 10 PeV, roughly 10% of an air shower’s energy reaches the surface of a high elevation ice sheet (≳2 ˙km) concentrated into a radius of roughly 10 cm. This penetrating shower core creates an in-ice cascade orders of magnitude more dense than the preceding in-air cascade. Additionally, this dense cascade can be detected via the radar echo technique, where transmitted radio waves are reflected from the ionization deposit left in the wake of the cascade. RET-CR will test the radar echo method in nature, with the in-ice cascade of a cosmic ray-initiated air shower serving as a test beam. In this work, we present the projected event rate and sensitivity based upon a three part simulation using corsika, geant4, and radioscatter. RET-CR expects ~1 radar echo event per day.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

High-resolution simulations of a turbulent boundary layer impacting two obstacles in tandem

High-fidelity large-eddy simulations of the flow around two rectangular obstacles are carried out at a Reynolds number of 10 000 based on the freestream velocity and the obstacle height. The incoming flow is a developed turbulent boundary layer. Mean-velocity components, turbulence fluctuations, and the terms of the turbulent-kinetic-energy budget are analyzed for three flow regimes: skimming flow, wake interference, and isolated roughness. Three regions are identified where the flow undergoes the most significant changes: the first obstacle’s wake, the region in front of the second obstacle, and the region around the second obstacle. In the skimming-flow case, turbulence activity in the cavity between the obstacles is limited and mainly occurs in a small region in front of the second obstacle. In the wake-interference case, there is a strong interaction between the freestream flow that penetrates the cavity and the wake of the first obstacle. Furthermore, this interaction results in more intense turbulent fluctuations between the obstacles. In the isolated-roughness case, the wake of the first obstacle is in good agreement with that of an isolated obstacle. Separation bubbles with strong turbulent fluctuations appear around the second obstacle.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Free Space Ramsey Spectroscopy in Rubidium with Noise below the Quantum Projection Limit

In this work, we demonstrate the utility of optical cavity generated spin-squeezed states in free space atomic fountain clocks in ensembles of 390 000 87 Rb atoms. Fluorescence imaging, correlated to an initial quantum nondemolition measurement, is used for population spectroscopy after the atoms are released from a confining lattice. For a free fall time of 4 milliseconds, we resolve a single-shot phase sensitivity of 814(61) microradians, which is 5.8(0.6) decibels (dB) below the quantum projection limit. We observe that this squeezing is preserved as the cloud expands to a roughly 200 μ m radius and falls roughly 300 μm in free space. Ramsey spectroscopy with 240 000 atoms at a 3.6 ms Ramsey time results in a single-shot fractional frequency stability of 8.4(0.2) × 10 –12 , 3.8(0.2) dB below the quantum projection limit. The sensitivity and stability are limited by the technical noise in the fluorescence detection protocol and the microwave system, respectively.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Early stage growth of amorphous thin film: Average kinetics, nanoscale dynamics, and pressure dependence

We used the coherent grazing incidence small angle x-ray scattering technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi 2 sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized by time parameters extracted from the height-height structure factor and correlation functions. The roughness at a given length scale reaches a maximum before relaxing down to a steady state. The lateral length scale dependence and pressure dependence are then compared among the measured kinetics and dynamics time parameters. Surfaces grown at lower pressures are smoother, leading to longer correlation times. The time parameters to reach a dynamic steady state and a kinetic steady state show contrasting pressure dependence. A dynamic steady state is reached earlier than the kinetic steady state at high pressure. A more random deposition direction and lower kinetic energy at higher pressures can explain these phenomena, along with the hypothesis that larger nanoclusters form in vapor before arriving at the surface. Here, a continuum model is applied to simulate the overall behavior with mixed success.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The effect of longer-range waviness on X-ray reflectivity measurements

A model for calculating the X-ray reflectivity (XRR) of surfaces to extract both roughness and waviness features is presented. Expressions of reflectivity intensity are derived as a function of root-mean-square (RMS) roughness σ, RMS waviness σ L , and the cut-off frequency between the features ω 0 . Experiments were conducted at the Advanced Light Source at Lawrence Berkeley National Laboratory, beamline 8.3.2, on BK7 glass manufactured with a multi-step polishing process to validate the model, and were compared with atomic force microscopy (AFM), Fizeau interferometry and surface profilometry measurements. Here, the parameter results and their deviations for XRR measurements were σ = 2.9 ± 0.2 nm and σ L = 14.6 ± 0.5 nm with a wavelength cut-off of 1/(18 ± 2) µm –1 , while the results from the AFM, Fizeau and profilometry measurements were σ AFM = 3.4 ± 0.4 nm, σ L,Fizeau = 21.6 nm, σ prof = 4.0 ± 0.1 nm, and σ L,prof = 21.4 ± 0.1 nm with cut-offs for the profilometry and Fizeau measurements limited to frequencies of (1/16) µm –1 to (1/4) mm –1 .

42 ENGINEERING↗
DOE OSTI2024

Wet-Etching of Acoustically Spalled GaAs for Substrate Reuse

Acoustic spalling is a promising technique for substrate reuse in the fabrication of gallium arsenide (GaAs) photovoltaic cells. However, the acoustic spalling process can leave the substrate with areas of rough surface morphology that can interfere with subsequent cell growth and processing. In this work, we investigate the use of wet etchants to smooth the surface of acoustically spalled GaAs substrates. We evaluated six different etchants. Of those tested, an 8:1:1 mixture of sulfuric acid, hydrogen peroxide, and water at 30 degrees C and a moderate stirring rate showed the greatest roughness reduction per mass loss while producing the desired morphology. This etchant was then applied to an acoustically spalled 2-inch GaAs wafer. A single-junction GaAs cell was then grown via metalorganic vapor-phase epitaxy on this substrate, an acoustic spalled substrate without a smoothing etch, and an epi-ready substrate. Use of the 8:1:1 H2SO4:H2O2:H2O etchant produced cells an average efficiency of 12.8% as compared to that of 2.0% grown on the unetched acoustically spalled substrate and 16.3% grown on the epi-ready substrate. The results of this work demonstrate that wet etching is a viable method for smoothing the surface of spalled GaAs substrates, paving the way for substrate reuse via acoustic spalling at efficiencies that approach growth on epi-ready substrates.

etching↗
DOE OSTI2025

In Situ MOVPE Smoothing of Acoustically Spalled GaAs for Substrate Reuse

High material costs, especially for substrates, have limited the widespread adoption of III-V photovoltaics. A potential to reduce this cost is to reuse the III-V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III-V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 ..mu..m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30 degrees C 8:1:1 H2SO4:H2O2:H2O etch prior to a 5 ..mu..m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.

14 SOLAR ENERGY↗
DOE OSTI2021

Qualification of 3-D Printed Mortar With Electrical Conductivity Measurements

Additive manufacturing (AM) or 3D printing of concrete allows for construction of arbitrary shape structures without a mold. Since reproducibility of 3D printed concrete is lower than that of conventional fabrication, each 3D printed structure should be monitored for proper curing. Conventional qualification of concrete is based on several tests, including destructive compressive strength measurements. Because a structure is 3-D printed layer-by-layer, the surfaces of AM concrete structures have significant surface roughness. This limits the applicability of conventional nondestructive testing methods. We investigated qualification of 3D printed mortar by monitoring curing with nondestructive electrical conductivity measurements. Bulk resistance of concrete was extracted from electrochemical impedance spectroscopy (EIS measurements made using custom flexible self-adhesive electrodes, which contour to rough surfaces. We show that bulk resistivity of concrete increases linearly with time. This allows for developing a calibration curve for compressive strength lookup from nondestructive electrical conductivity measurements. Conductivity measurements also allow for estimation of formation factor, which is an indicator of mortar permeability.

36 MATERIALS SCIENCE↗
DOE OSTI2025

LatticeAnalytics: Strut-Level Visualization and Inspection of Additively Manufactured Lattice Structures

Additive manufacturing (AM) is revolutionizing the production of custom components with complex internal geometries, essential for high-performance applications in diverse fields such as medicine and defense. These AM parts optimize strength while minimizing weight by utilizing internal lattice structures consisting of large quantities of small interconnected struts. However, the complexity of these structures, combined with the challenges of using X-ray Computed Tomography (XCT) data, makes validation of part reliability difficult. This ultimately inhibits the development of novel parts for our collaborating material scientists. Here, we introduce LatticeAnalytics, a novel framework specifically designed for visual inspection of defects in these lattice structures. Our framework offers an end-to-end solution that includes the data management of XCT scans, enables remote access for geographically dispersed teams through a web-based dashboard, and incorporates novel visualizations. Our analysis is facilitated by a coarse alignment between the lattice’s nominal model, a spatial graph, and the XCT data. We employ a simple VR-based approach for fast and rough alignment, followed by an offline registration and identification of the struts. With the nodes and struts aligned and identified in the volume, our framework allows querying of subvolumes containing a single strut at multiple resolutions. This avoids computation over the entire lattice and also allow for easy parallelization of down-stream computations, such as strut-specific metrics. To depict a fast overview of the strut quality, we introduce two innovative visual encodings, crucial for our collaborators’ research in creating novel AM parts: the Contour View and the Roughness Map, which depict critical geometrical and surface features of individual struts in standardized two 2D views. We evaluated the integrated system through expert interviews. The feedback confirms the framework’s practicality and its effectiveness in enhancing current inspection workflows. It solves major bottlenecks for our collaborators, ultimately helping them create novel parts with advanced properties.

Miao, Haichao [Lawrence Livermore National Laborat↗
DOE OSTI2023

Printability and Overall Cooling Performance of Additively Manufactured Holes With Inlet and Exit Rounding

Abstract To improve cooling effectiveness of gas turbine hardware, various film cooling hole shapes have previously been researched. Unique design modifications have recently been made possible through the design freedom allotted by additive manufacturing (AM). As one example, creating a rounded inlet for a film-cooling hole can mitigate separation at the inlet. This study explores various geometric features by exploiting the uses of additive manufacturing for shaped film cooling holes at engine scale. Both printability and cooling performance were evaluated. Resulting from this study, additively manufactured holes with hole inlet and exit rounding were printed with some variations from the design intent (DI). The largest deviations from the design intent occurred from dross roughness features located on the leeward side of the hole inlet. The measured overall effectiveness indicated that an as-built inlet fillet decreased in-hole convection as well as decreased jet mixing compared to the as-built sharp inlet. Including an exit fillet, which prevented an overbuilt diffuser exit, was also found to decrease jet mixing. A particular insight gained from this study is the importance of the convective cooling within the hole to the overall cooling performance. In-hole roughness, which is a result of additive manufacturing, increased convective cooling within the holes but also increased jet mixing as the coolant exited the hole. The increased jet mixing caused low overall effectiveness downstream of injection.

Engineering↗
DOE OSTI2022

Growth of ultrathin Bi 2 Se 3 films by molecular beam epitaxy

Bi 2 Se 3 is a widely studied 3D topological insulator having potential applications in optics, electronics, and spintronics. When the thickness of these films decreases to less than approximately 6 nm, the top and bottom surface states couple, resulting in the opening of a small gap at the Dirac point. In the 2D limit, Bi 2 Se 3 may exhibit quantum spin Hall states. However, growing coalesced ultrathin Bi 2 Se 3 films with a controllable thickness and typical triangular domain morphology in the few nanometer range is challenging. Here, we explore the growth of Bi 2 Se 3 films having thicknesses down to 4 nm on sapphire substrates using molecular beam epitaxy that were then characterized with Hall measurements, atomic force microscopy, and Raman imaging. We find that substrate pretreatment—growing and decomposing a few layers of Bi 2 Se 3 before the actual deposition—is critical to obtaining a completely coalesced film. In addition, higher growth rates and lower substrate temperatures led to improvement in surface roughness, in contrast to what is observed for conventional epitaxy. Altogether, coalesced ultrathin Bi 2 Se 3 films with lower surface roughness enable thickness-dependent studies across the transition from a 3D-topological insulator to one with gapped surface states in the 2D regime.

36 MATERIALS SCIENCE↗
DOE OSTI2024

High-resolution chemical patterns from negative tone resists for the integration of extreme ultraviolet patterns of metal-oxide resists with directed self-assembly of block copolymers

Extreme ultraviolet (EUV) lithography faces significant challenges in designing suitable resist materials that can provide adequate precision, while maintaining economically viable throughput. These challenges in resist materials have led to printing failures and high roughness in EUV patterns, compromising the performance of semiconductor devices. Integrating directed self-assembly (DSA) of block copolymers (BCPs) with EUV lithography offers a promising solution because, while the BCPs register to the EUV-defined chemical guiding pattern, the thermodynamically determined structures of the BCPs automatically rectify defects and roughness in the EUV pattern. Despite the superior resolution of metal-oxide EUV resists (MORs), their application to DSA is limited by the difficulty in converting them into chemical patterns that allow effective transfer of the rectified patterns of DSA films into inorganic materials. To address this challenge, this study introduces a novel strategy for fabricating chemical patterns using hydrogen silsesquioxane (HSQ), a high-resolution negative tone inorganic resist, as a model system for MORs. Initially, a sacrificial Cr pattern is generated from HSQ patterns via reactive ion etching. The sacrificial Cr pattern is converted into a chemical pattern by first grafting a water-soluble polyethylene oxide brush onto the substrate, then wet etching the Cr, and finally grafting nonpolar polystyrene brushes. Assembling polystyrene-block-poly(methyl methacrylate) on these patterns results in structures oriented and registered with the underlying pattern, achieving 24 nm full-pitch resolutions. In conclusion, this approach has the potential to integrate MOR patterns into the DSA process, thereby enabling the generation of high-quality sub-10 nm patterns with high-χ BCPs.

Atomic force microscopy↗
DOE OSTI2022

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions. Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old. Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning. Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

77 NANOSCIENCE AND NANOTECHNOLOGY↗