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Interaction of plane p-polarized electromagnetic wave obliquely incident on hot plasma half space and plasma slab
P-Q norms generalized inverse concept of matrix derived from extension of Penrose best approximate solution of linear equations
Obliquely incident p-polarized plane electromagnetic wave interaction with hot plasma half space, using linearized relativistic Vlasov equation and Laplace transform technique
A detailed experimental and theoretical study of quantum oscillations in the magnetostriction and Young's modulus of p-PbTe is presented. The valance band of PbTe is approximated by a spheroidal, nonparabolic model in which the effects of strain on the valance band parameters are described by a deformation potential model. Using appropriate thermodynamic derivatives of the modified Lifshitz-Kosevich expression for the oscillatory parts of the electronic free energy, it is shown that both types of oscillations arise mainly from relative shifts of the valance band maxima due to shear strains, accompanied by intervalley charge transfer. Band parameters derived from the periods, phases, and spin splitting of the oscillations are in generally good agreement with values reported by other workers. A detailed comparison is made of the experimentally observed oscillation amplitudes with those predicted by theory, and satisfactory agreement is found. The ratio of the amplitudes of the two effects yields a value of the valance band deformation potential in good agreement with a value found from piezoresistance experiments by Burke.
The structures of Zr-93 and Zr-91 were studied by the stripping reaction Zr-92(d,p)Zr-93 and the pick-up reaction Zr-92(d,t)Zr-91 using 13 MeV incident deuterons. The reaction product particles were detected by counter telescope. Typical spectra from the reactions were analyzed by a nonlinear least squares peak fitting program which included a background search. Spin and parity assignments to observed excited levels were made by comparing experimental angular distributions with distorted wave Born approximation calculations.
A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.
The requirements for 10 ohm cm N-ON-P, silicon solar cells, for use on solar panel assemblies for space flight applications are specified.
Various methods for determining the series resistance of p-n junction diodes and solar cells are described and compared. New methods involving the measurement of the ac admittance are shown to have certain advantages over methods proposed earlier.
Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.
An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.
Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.
The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.
As starting materials for the preparation of polyradicals of triphenylmethyl type linked by p-phenylene units bis(4-iodophenylmethane) and bis(4-iodo-2,5-dimethyl-phenylmethane) were synthesized by a Sandmeyer reaction from the corresponding diamino compounds and subsequently transformed into the corresponding polymeric hydrocarbons 6a and 6b by an Ullmann condensation. In the following step 6a and 6b were brominated at the tert. carbon atom by means of N-bromosuccinimide. The reaction of the resulting poly (4,4'-biphenylylen-alpha-bromobenzylidene)s (7a and 7b) with mercury afforded the corresponding radicals, the ESR spectra of which were recorded. From the methyl substituted polymer 7b poly (2,2'5,5-tetramethyl-4,4'-bi-phenylylen)phenylmethylidyne was formed, whereas the unsubstituted product 7a was transformed into a para-quinoide polymer with radical properties.
A determination of primary energy is required in order to study the energy dependence of meson multiplicity in A-A collisions in cosmic rays. Various procedures which estimate the energy of a primary nucleus from its interaction were investigated. An average of two methods were used, one using the pions and wounded protons and the other using spectator protons and alpha particles. The high P sub T tail observed for Z = 2 fragments requires a modification of the latter method.
p-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.
Analysis of Stanford differential velocity observations has been extended through the 1984 observing season. Excellent quality observations were obtained in 1984 on 38 days in a 49 day interval from June 20th through August 7th. The power spectrum of this data has been examined and improved frequency determinations have been made for p-modes of degree 2 through 5 and order 5 through 34. Of special interest are the modes of the lower orders, n ranging from 5 to 10, which have not been identified previously.
Light-induced changes in the absorption of a multiple quantum well hetero n-i-p-i structure at room temperature have been measured using a pump-probe method. Changes in the absorption coefficient in the quantum wells of more than 2000/cm have been observed with pump intensities as small as 375 mW/sq cm. Corresponding changes in the index of refraction of about 0.02 have been calculated.
The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.