Serrodyne frequency converter re-entrant amplifier system Patent
Serrodyne traveling wave tube reentrant amplifier for synchronous communication satellites operating at microwave frequencies
Allen, W. K.↗
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Results for “Operational amplifier”
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Theoretical and experimental investigations of collective microwave phenomena in solids
Methods of generating microwave shear waves efficiently were studied. A new technique of mode conversion from a longitudinal wave to a shear wave was investigated and virtually 100% conversion efficiency could be obtained. Several aspects of Gunn oscillators were studied. One involved the detailed study of domains in Gunn oscillators using long samples of bulk gallium arsenide. Several new techniques were devised for measuring the properties of the domains. A fundamental theory of the efficiency of a Gunn oscillator was worked out. A computer program was devised to study the transient effect of domains passing through Gunn diodes. Some of the first planar epitaxial Gunn oscillators were made using liquid epitaxial material grown by liquid phase techniques on semi-insulating substrate. A new theory which predicted the properties of RF signals propagating in a thin film layer of GaAs was developed. The theory of the operation of a traveling wave amplifier is described.
Kino, G. S.↗
A 4-W 56-dB gain microstrip amplifier at 15 GHz utilizing GaAs FET's and IMPATT diodes
Performance results and design considerations are presented for an all solid-state Ku-band power amplifier which is feasible for use in PM communication systems for airborne or spacecraft transmitter applications. A six-stage GaAs FET preamplifier and a driver and balanced power amplifier utilizing GaAs IMPATT diodes operating in the injection locked oscillator mode are discussed. For high power and efficiency Schottky-Read IMPATT's with low-high-low doping profiles are employed. For improved reliability the IMPATT's incorporate a TiW barrier metallization to retard degradation of the IMPATT's. Results of accelerated life testing of the IMPATT devices are also presented.
Sokolov, V.↗
Experimental evaluation of a ruby maser at 43 GHz
Inversion ratio measurements were conducted at several frequencies between 27 and 43 GHz for a pink ruby material (0.05% Cr/3+/ in Al2O3) at the push-pull pump angle of 54.7 degrees in order to determine the upper frequency limit where pink ruby could be expected to operate as a practical maser amplifier. Based on these measurements, a single-stage maser was developed which yielded 8 + or - 1 dB net gain and a 3 dB bandwidth of 180 MHz at a center frequency of 42.5 GHz. It is concluded that a multistage reflected wave maser could achieve bandwidths exceeding 1 GHz with 30 dB net gain at center frequencies near 40 GHz.
Moore, C. R.↗
Microwave Power Combiner With Switching Diodes
In multiple-port microwave power combiner, each of outputs of two or more power amplifiers of same frequency and phase passed to common output port separately or together. Each amplifier connected to combiner through switch consisting of resonant structures, radio-frequency chokes, and diode. Switches not only permit flexiblity in selection of amplifiers but isolate unused amplifiers from network, all while operating at relatively low power loss.
Conroy, B. L.↗
User's guide for a large signal computer model of the helical traveling wave tube
The use is described of a successful large-signal, two-dimensional (axisymmetric), deformable disk computer model of the helical traveling wave tube amplifier, an extensively revised and operationally simplified version. We also discuss program input and output and the auxiliary files necessary for operation. Included is a sample problem and its input data and output results. Interested parties may now obtain from the author the FORTRAN source code, auxiliary files, and sample input data on a standard floppy diskette, the contents of which are described herein.
Palmer, Raymond W.↗
Improved Fiber-Optic-Coupled Pressure And Vibration Sensors
Improved fiber-optic coupler enables use of single optical fiber to carry light to and from sensor head. Eliminates problem of alignment of multiple fibers in sensor head and simplifies calibration by making performance both more predictable and more stable. Sensitivities increased, sizes reduced. Provides increased margin for design of compact sensor heads not required to contain amplifier circuits and withstand high operating temperatures.
Zuckerwar, Allan J.↗
Off-Design Performance of a Multi-Stage Supersonic Turbine
The drive towards high-work turbines has led to designs which can be compact, transonic, supersonic, counter rotating, or use a dense drive gas. These aggressive designs can lead to strong unsteady secondary flows and flow separation. The amplitude and extent of these unsteady flow phenomena can be amplified at off-design operating conditions. Pre-test off-design predictions have been performed for a new two-stage supersonic turbine design that is currently being tested in air. The simulations were performed using a three-dimensional unsteady Navier-Stokes analysis, and the predicted results have been compared with solutions from a validated meanline analysis.
Dorney, Daniel J.↗
An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center
A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.
Hunter, Gary W.↗
A Compact Two-Stage 120 W GaN High Power Amplifier for SweepSAR Radar Systems
This work presents the design and measured results of a fully integrated switched power two-stage GaN HEMT high-power amplifier (HPA) achieving 60% power-added efficiency at over 120Woutput power. This high-efficiency GaN HEMT HPA is an enabling technology for L-band SweepSAR interferometric instruments that enable frequent repeat intervals and high-resolution imagery. The L-band HPA was designed using space-qualified state-of-the-art GaN HEMT technology. The amplifier exhibits over 34 dB of power gain at 51 dBm of output power across an 80 MHz bandwidth. The HPA is divided into two stages, an 8 W driver stage and 120 W output stage. The amplifier is designed for pulsed operation, with a high-speed DC drain switch operating at the pulsed-repetition interval and settles within 200 ns. In addition to the electrical design, a thermally optimized package was designed, that allows for direct thermal radiation to maintain low-junction temperatures for the GaN parts maximizing long-term reliability. Lastly, real radar waveforms are characterized and analysis of amplitude and phase stability over temperature demonstrate ultra-stable operation over temperature using integrated bias compensation circuitry allowing less than 0.2 dB amplitude variation and 2 deg phase variation over a 70 C range.
Thrivikraman, Tushar↗
Satellite altimeters after Skylab and GEOS-C - should they utilize a single transmitter or an array of pulsed amplifiers?
An attempt was made to determine if future satellite altimeters, operating at K-band, should use a single transmitter or an array of pulsed amplifiers. The two systems were compared as a function of reliability, power, service life, system requirements, and weight. Preliminary results indicate the modular system to be superior in service life and reliability although it requires more power and is substantially heavier than the single system. No concrete conclusions were reached as to which system should be used.
Greene, A. H.↗
Development of a fluidic rudder
Wind tunnel tests were performed to examine the concept of aircraft controls without moving parts, and aircraft stabilization by means of scoop-fed slots. Results of wind tunnel tests, in the framework of a NASA program, to determine the force-control characteristics of a symmetrical airfoil with scoop-fed slots are discussed. Further tests showed that a fluidic amplifier could be built into the airfoil and operate with ram air. A fluidic rudder was then developed, consisting of cascaded fluidic amplifiers necessary to couple low-level fluidic sensors with slot flow control of the aerodynamic force on the vertical tail.
Belsterling, C. A.↗
Characterization of a Common-Source Amplifier Using Ferroelectric Transistors
This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.
Hunt, Mitchell↗
Differential InP HEMT MMIC Amplifiers Embedded in Waveguides
Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.
Kangaslahti, Pekka↗
Cross-differential amplifier
A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.
Hajimiri, Seyed-Ali↗
Cross-differential amplifier
A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.
Hajimiri, Seyed-Ali↗
Cross-differential amplifier
A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.
Hajimiri, Seyed-Ali↗
Cross-differential amplifier
A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.
Hajimiri, Seyed-Ali↗