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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism

One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented Mo 6 Te 6 NWs in 2D molybdenum ditelluride (MoTe 2 ) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of Mo 6 Te 6 NWs from MoTe 2 occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe 2 heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe 2 FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A two-directional vibrational probe reveals different electric field orientations in solution and an enzyme active site

We report the catalytic power of an electric field depends on its magnitude and orientation with respect to the reactive chemical species. Understanding and designing new catalysts for electrostatic catalysis thus requires methods to measure the electric field orientation and magnitude at the molecular scale. We demonstrate that electric field orientations can be extracted using a two-directional vibrational probe by exploiting the vibrational Stark effect of both the C=O and C–D stretches of a deuterated aldehyde. Combining spectroscopy with molecular dynamics and electronic structure partitioning methods, we demonstrate that, despite distinct polarities, solvents act similarly in their preference for electrostatically stabilizing large bond dipoles at the expense of destabilizing small ones. In contrast, we find that for an active-site aldehyde inhibitor of liver alcohol dehydrogenase, the electric field orientation deviates markedly from that found in solvents, which provides direct evidence for the fundamental difference between the electrostatic environment of solvents and that of a preorganized enzyme active site.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Step engineering for nucleation and domain orientation control in WSe 2 epitaxy on c -plane sapphire

In this study, epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe 2 on c-plane sapphire by metal–organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe 2 nucleation, imparting either a 0° or 60° orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Estimation of the orientation of stress in the Earth’s crust without earthquake or borehole data

Abstract Mechanical stress acting in the Earth’s crust is a fundamental property that is important for a wide range of scientific and engineering applications. The orientation of maximum horizontal compressive stress can be estimated by inverting earthquake source mechanisms and measured directly from borehole-based measurements, but large regions of the continents have few or no observations. Here we present an approach to determine the orientation of maximum horizontal compressive stress by measuring stress-induced anisotropy of nonlinear susceptibility, which is the derivative of elastic modulus with respect to strain. Laboratory and Earth experiments show that nonlinear susceptibility is azimuthally dependent in an anisotropic stress field and is maximum in the orientation of maximum horizontal compressive stress. We observe this behavior in the Earth—in Oklahoma and New Mexico, U.S.A, where maximum nonlinear susceptibility coincides with the orientation of maximum horizontal compressive stress measured using traditional methods. Our measurements use empirical Green’s functions and solid-earth tides and can be applied at different temporal and spatial scales.

58 GEOSCIENCES↗
DOE OSTI2015

Giant strain with ultra-low hysteresis and high temperature stability in grain oriented lead-free K₀̣₅Bi₀̣₅TiO₃-BaTiO₃-Na₀̣₅Bi₀̣₅TiO₃ piezoelectric materials

We synthesized grain-oriented lead-free piezoelectric materials in (K₀̣₅Bi₀̣₅TiO₃-BaTiO₃-xNa₀̣₅Bi₀̣₅TiO₃ (KBT-BT-NBT) system with high degree of texturing along the [001]c (c-cubic) crystallographic orientation. We demonstrate giant field induced strain (~0.48%) with an ultra-low hysteresis along with enhanced piezoelectric response (d₃₃ ~ 190pC/N) and high temperature stability (~160°C). Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) results demonstrate smaller size highly ordered domain structure in grain-oriented specimen relative to the conventional polycrystalline ceramics. The grain oriented specimens exhibited a high degree of non-180° domain switching, in comparison to the randomly axed ones. These results indicate the effective solution to the lead-free piezoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Grain boundary plane orientation fundamental zones and structure-property relationships

Grain boundary plane orientation is a profoundly important determinant of character in polycrystalline materials that is not well understood. This work demonstrates how boundary plane orientation fundamental zones, which capture the natural crystallographic symmetries of a grain boundary, can be used to establish structure-property relationships. Using the fundamental zone representation, trends in computed energy, excess volume at the grain boundary, and temperature-dependent mobility naturally emerge and show a strong dependence on the boundary plane orientation. Analysis of common misorientation axes even suggests broader trends of grain boundary energy as a function of misorientation angle and plane orientation. Due to the strong structure-property relationships that naturally emerge from this work, boundary plane fundamental zones are expected to simplify analysis of both computational and experimental data. This standardized representation has the potential to significantly accelerate research in the topologically complex and vast five-dimensional phase space of grain boundaries.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Local orientation of chains at crystal/amorphous interfaces buried in isotactic polypropylene thin films

A better understanding of the aggregation states of polymer chains in thin films is of pivotal importance for developing thin film polymer devices in addition to its inherent scientific interest. Here we report the preferential orientation of the crystalline lamellae for isotactic polypropylene (iPP) in spin-coated films by grazing incidence of wide-angle X-ray diffraction in conjunction with sum frequency generation vibrational spectroscopy, which provides information on the local conformation of chains at crystal/amorphous interfaces buried in a thin film. The crystalline orientation of iPP, which formed cross-hatched lamellae induced by lamellar branching, altered from a mixture of edge-on and face-on mother lamellae to preferential face-on mother lamellae with decreasing thickness. Here, the orientation of methyl groups at the crystal/amorphous interfaces in the interior region of the iPP films changed, accompanied by a change in the lamellar orientation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Surface enrichment dictates block copolymer orientation

Orientation of block copolymer (BCP) morphology in thin films is critical to applications as nanostructured coatings. Despite being well-studied, the ability to control BCP orientation across all possible block constituents remains challenging. Here, in this study, we deploy coarse-grained molecular dynamics simulations to study diblock copolymer ordering in thin films, focusing on chain makeup, substrate surface energy, and surface tension disparity between the two constituent blocks. We explore the multi-dimensional parameter space of ordering using a machine-learning approach, where an autonomous loop using a Gaussian process (GP) control algorithm iteratively selects high-value simulations to compute. The GP kernel was engineered to capture known symmetries. The trained GP model serves as both a complete map of system response, and a robust means of extracting material knowledge. We demonstrate that the vertical orientation of BCP phases depends on several counter-balancing energetic contributions, including entropic and enthalpic material enrichment at interfaces, distortion of morphological objects through the film depth, and of course interfacial energies. BCP lamellae are found more resistant to these effects, and thus more robustly form vertical orientations across a broad range of conditions; while BCP cylinders are found to be highly sensitive to surface tension disparity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

Investigation of easy axis orientation of Nd-Fe-B melt-spun ribbons produced by hot rolling and influence of Ti-C addition

The c-axis orientation of Nd-Fe-B melt-spun ribbons caused by hot rolling and the influence of Ti-C addition were investigated. A small roll was placed on a steel wheel near a quartz tube in such a manner that the melt-spun ribbons were hot rolled immediately after quenching. X-ray diffraction patterns measured on both surfaces of the Nd-Fe-B-Ti ribbon indicate that the c-axis is oriented normal to the ribbon plane. The domain pattern of the Nd-Fe-B-Ti-C ribbon was observed with a Kerr microscope. Most of the grains exhibit a maze domain configuration, indicating that the c-axis is oriented normal to the ribbon plane. Furthermore, it was demonstrated that hot rolling and the addition of Ti-C promote c-axis orientation and high coercivity of Nd-Fe-B melt-spun ribbons.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Femtosecond electron diffraction: Preparation and characterization of (110)-oriented bismuth films

Here, we present a new approach to synthesize (110)-oriented ultrathin membranes of bismuth (Bi). This rather exotic orientation was achieved by directing the growth through rationale control of lattice matching. Bi films were hetero-epitaxially grown on the (100)-surface of freshly cleaved potassium chloride crystals. The sample orientation was characterized by x-ray and electron diffraction. In addition, high quality free-standing films were obtained after dissolution of the substrate in water and controlled evaporation. Femtosecond electron diffraction (FED) was, therefore, used to monitor the coherent shear acoustic phonons in (110)-oriented free-standing Bi films produced by impulsive femtosecond optical excitation. The small de Broglie wavelength (flat Ewald sphere) of keV-electrons combined with an off-Bragg detection scheme provided a magnified view of shear atomic motions, i.e., lattice distortions in the transverse direction. All-optical pump-probe experiments are usually insensitive to shear displacements, a fact that makes FED a unique non-contact method to achieve the complete characterization of elastic properties of nanoscale materials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Anisotropy in the hole mobility measured along the [110] and [1{sup ¯}10] orientations in a strained Ge quantum well

In this paper, we report on anisotropic transport properties of strained germanium (sGe) quantum wells grown on Si (001) substrates with p-type doping beneath the sGe channel. Mobility measurements were made along orthogonal [110] directions. The level of measured resistivity anisotropy in the [110] and [1{sup ¯}10] orientations was found to vary between 2 and 9 for different samples. This corresponds to an actual mobility anisotropy ratio of between 1.3 and 2, values that are significantly higher than previously found for sGe. From modeling of the low temperature (12 K) mobility, using the relaxation time approach, the anisotropy in mobility was accounted for by a difference in interface roughness scattering between the two orientations. For the [110] orientation, a step height of Δ = 0.28 nm and interface roughness periodicity of λ = 7 nm were found while for the [1{sup ¯}10] orientation, λ reduced to 4 nm and Δ increased to 0.42 nm. High-resolution X-ray diffraction and transmission electron microscopy confirmed a 1° off-cut in the wafer towards the [1{sup ¯}10] direction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Intentional anisotropic strain relaxation in (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N one-dimensionally lattice matched to GaN

We report on (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N grown by low pressure metal organic vapor phase epitaxy on (112{sup ¯}2) GaN templates on patterned r-plane sapphire. The indium incorporation efficiency as well as the growth rate of (112{sup ¯}2) oriented layers are similar to c-plane oriented Al{sub 1−x}In{sub x}N layers. Deposition of thick Al{sub 1−x}In{sub x}N layers does not lead to additional roughening like in case of c-plane oriented Al{sub 1−x}In{sub x}N. Independent of the thickness, the degree of relaxation of layers lattice matched in m-direction is in the range of 33%–45% in [112{sup ¯}3{sup ¯}]-direction. Associated with the relaxation in [112{sup ¯}3{sup ¯}]-direction, there is a tilt of the Al{sub 1−x}In{sub x}N layers around the [11{sup ¯}00] axis due to slip of threading dislocations on the basal (0001)-plane. Relaxation in m-direction is not observable for layers lattice matched in [112{sup ¯}3{sup ¯}] direction. The possibility to adjust the lattice parameter of AlInN in [112{sup ¯}3{sup ¯}] direction without changing the lattice parameter in m-direction by anisotropic strain relaxation opens up opportunities for subsequent growth of optically active structures. One possibility is to form relaxed buffer layers for GaInN quantum well structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Fabrication and orientation control of highly cation-ordered epitaxial PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} thin films on Si (100)

Highly cation-ordered (100) and (110)-oriented PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} (PST) films were deposited on buffered Si (100) substrates using pulsed laser deposition. Switching of crystal orientation from (100) to (110) was achieved by replacing the Si (100)/ZrO2:Y2O3 (100)/CeO2 (100)/LaNiO3 (100)/PST (100) heterostructure with Si (100)/ZrO2:Y2O3 (YSZ) (100)/SrRuO3 (110)/PST (110). The out-of-plane and in-plane crystal orientation and internal microstructure of (001) and (110) PST films were analyzed in detail by X-ray diffraction, pole figure measurements, and transmission electron microscopy. XRD superstructure reflections indicate that both (100) and (110) PST films are highly cation-ordered and transmission electron microscopy measurements show nano-domains of 15 nm size. The electrical measurements show that the PST films are ferroelectric and that the ferroelectric properties are linked to the microstructure. We have demonstrated the successful integration of PST films on Si substrates with control on growth orientation; this approach can be extended to other oxides to be integrated on silicon substrates for future device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Fourier decomposition of polymer orientation in large-amplitude oscillatory shear flow

In our previous work, we explored the dynamics of a dilute suspension of rigid dumbbells as a model for polymeric liquids in large-amplitude oscillatory shear flow, a flow experiment that has gained a significant following in recent years. We chose rigid dumbbells since these are the simplest molecular model to give higher harmonics in the components of the stress response. We derived the expression for the dumbbell orientation distribution, and then we used this function to calculate the shear stress response, and normal stress difference responses in large-amplitude oscillatory shear flow. In this paper, we deepen our understanding of the polymer motion underlying large-amplitude oscillatory shear flow by decomposing the orientation distribution function into its first five Fourier components (the zeroth, first, second, third, and fourth harmonics). We use three-dimensional images to explore each harmonic of the polymer motion. Our analysis includes the three most important cases: (i) nonlinear steady shear flow (where the Deborah number λω is zero and the Weissenberg number λγ 0 is above unity), (ii) nonlinear viscoelasticity (where both λω and λγ 0 exceed unity), and (iii) linear viscoelasticity (where λω exceeds unity and where λγ 0 approaches zero). We learn that the polymer orientation distribution is spherical in the linear viscoelastic regime, and otherwise tilted and peanut-shaped. We find that the peanut-shaping is mainly caused by the zeroth harmonic, and the tilting, by the second. The first, third, and fourth harmonics of the orientation distribution make only slight contributions to the overall polymer motion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the 〈100〉 and 〈110〉 directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Magnetic domain configuration of (111)-oriented LaFeO 3 epitaxial thin films

In antiferromagnetic spintronics control of the domains and corresponding spin axis orientation is crucial for devices. Here we investigate the antiferromagnetic axis in (111)-oriented LaFeO 3 SrTiO 3 , which is coupled to structural twin domains. The structural domains have either the orthorhombic a- or b-axis along the in-plane <1$\bar{1}$0> cubic directions of the substrate, and the corresponding magnetic domains have the antiferromagnetic axis in the sample plane. Six degenerate antiferromagnetic axes are found corresponding to the <1$\bar{1}$0> and <11$\bar{2}$> in-plane directions. This is in contrast to the biaxial anisotropy in (001)-oriented films and reflects how crystal orientation can be used to control magnetic anisotropy in antiferromagnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗