Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Irradiation defect”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗
DOE OSTI2022

Revealing two-stage phase transition process in defective KTaO 3 under inelastic interactions

Here, the interactions of ions with defective KTaO 3 has been studied by irradiating pre-damaged single crystal KTaO 3 with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO 3 , the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, S e , ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of Se with defects enables amorphous ion track creation. At lower values of S e (5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm 2 , which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO 3 , is observed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Migration energy barriers and diffusion anisotropy of point defects on tungsten surfaces

We report tungsten is one of the most promising candidates for plasma-facing materials in future fusion devices, owing to its high performance under extreme irradiation conditions. However, irradiation-induced surface morphology varies significantly, depending on the irradiation type, fluence, and flux. Therefore, it is critical to examine the dynamics of point defects on tungsten (W) surfaces to understand how irradiation affects surface morphology. In this study, we employ the Self-Evolving Atomistic Kinetic Monte Carlo (SEAKMC) method to search for potential migration paths of point defects on W (1 0 0), (1 1 0) and (1 1 1) surfaces. The first-principles calculations are then used to accurately determine the migration energy barriers. The obtained paths and barriers are incorporated into a kinetic Monte Carlo (KMC) model to determine trajectories and diffusivities, which are described by diffusion tensors to demonstrate their anisotropic features. Multiple diffusion mechanisms have been identified on different surfaces, with various anisotropy factors. Particularly, point defects on the W (1 1 0) surface have the highest diffusivities, with anisotropy factors independent of temperatures. In comparison, the anisotropy of the W (1 0 0) surface decreases as temperature increases, while the W (1 1 1) surface is isotropic for point defects. This study provides insights into defect transport properties on different surfaces, which are essential for understanding the early stages of irradiation-induced microstructural evolutions and surface morphology of tungsten.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal diffusivity of irradiated tungsten and tungsten-rhenium alloys

The Japan-US PHENIX project irradiated tungsten materials in the RB-19J capsule experiment in the High Flux Isotope Reactor (HFIR). A gadolinium (Gd) shielding was used to absorb the thermal neutrons and reduce rhenium and osmium generation in tungsten. Pure tungsten and K-doped W-3% Re samples were irradiated at 532 – 662 °C to dose of 0.21-0.46 dpa, with the grain orientation perpendicular or parallel to the disk surface. Thermal diffusivity measurements were performed from 100 °C to 500 °C. Furthermore, additional measurements followed after annealing up to 900 °C. Irradiated pure tungsten specimens showed similar thermal diffusivity results compared with an unirradiated W-1% Re specimen in another study. The transmutation amount of Re was calculated to be about 0.52% for those specimens that showed good agreement with this study. Specimens irradiated in this study to different doses presented almost the same thermal diffusivity. Annealing up to 800 °C resulted in no recovery of thermal diffusivity. These results show that the contribution of crystalline defects to degradation of thermal diffusivity is quite limited. In addition, the thermal diffusivity of the irradiated specimens was getting close to that of the unirradiated specimens at elevated temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ion velocity effect governs damage annealing process in defective KTaO 3

Effects of electronic to nuclear energy losses (S e /S n ) ratio on damage evolution in defective KTaO 3 have been investigated by irradiating pre-damaged single crystal KTaO 3 with intermediate energy O ions (6 MeV, 8 MeV and 12 MeV) at 300 K. By exploring these processes in pre-damaged KTaO 3 containing a fractional disorder level of 0.35, the results demonstrate the occurrence of a precursory stage of damage production before the onset of damage annealing process in defective KTaO 3 that decreases with O ion energy. The observed ionization-induced annealing process by ion channeling analysis has been further mirrored by high resolution transmission electron microscopy analysis. In addition, the reduction of disorder level is accompanied by the broadening of the disorder profiles to greater depth with increasing ion fluence, and enhanced migration is observed with decreasing O ion energy. Since S e (~3.0 keV nm –1 ) is nearly constant for all 3 ion energies across the pre-damaged depth, the difference in behavior is due to the so-called 'velocity effect': the lower ion velocity below the Bragg peak yields a confined spread of the electron cascade and hence an increased energy deposition density. Here, the inelastic thermal spike calculation has further confirmed the existence of a velocity effect, not previously reported in KTaO 3 or very scarcely reported in other materials for which the existence of ionization-induced annealing has been reported. In other words, understanding of ionization-induced annealing has been advanced by pointing out that ion velocity effect governs the healing of pre-existing defects, which may have significant implication for the creation of new functionalities in KTaO 3 through atomic-level control of microstructural modifications, but may not be limited to KTaO 3 .

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Utilizing Ultraviolet Photons to Generate Single-Photon Emitters in Semiconductor Monolayers

The understanding and controlled creation of atomic defects in semiconductor transition metal dichalcogenides (TMDs) are highly relevant to their applications in high-performance quantum optics and nanoelectronic devices. Here, we demonstrate a versatile approach in generating single-photon emitters in MoS 2 monolayers using widely attainable UV light. We discover that only defects engendered by UV photons in vacuum exhibit single-photon-emitter characteristics, whereas those created in air lack quantum emission attributes. In combination with theoretical calculations, we assign the defects generated in vacuum to unpassivated sulfur vacancies, whose highly localized midgap states give rise to single-photon emission. In contrast, UV irradiation of the MoS 2 monolayers in air results in oxygen-passivated sulfur vacancies, whose optical properties are likely governed by their pristine band-to-defect band optical transitions. Furthermore, these findings suggest that widely available light sources such as UV light can be utilized for creating quantum photon sources in TMDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors

The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated with 200 keV protons to a fluence of 1016 cm−2. Examination of the x-ray diffraction (XRD) rocking curves indicates a preferred (100) orientation prior to irradiation, with decrease in crystal quality afterward. Additionally, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. Shifts toward theoretical unstrained positions are observed in the irradiated films, which indicates partial relaxation. Raman spectra also indicate increase in oxygen vacancies (VO) and zinc interstitial defects (Zni) compared to the control sample. Additionally, transient photocurrent measurements performed on each sample at different temperatures showed up to 2× increase in photocurrent decay time constants for irradiated samples vs the control. This persistent photoconductive behavior is linked to the activation of electron and hole traps near the surface, and to the desorption and reabsorption of O2 molecules on the ZnO surface under the influence of UV light. Using an Arrhenius model, trap activation energies were extracted and, by comparing with known energies from the literature, the dominant defects contributing to persistent photoconductivity for each irradiation condition were identified. The persistence of differences in photocurrent transients between different samples months after irradiation indicates that the defects introduced by the suppression of thermally activated dynamic annealing processes have a long-term deleterious effect on device performance.

Heuser, Thomas A. (ORCID:0000000225642400)↗
DOE OSTI2023

Multi-Scale Characterization of Porosity and Cracks in Silicon Carbide Cladding after Transient Reactor Test Facility Irradiation

Silicon carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuel (ATF) cladding for light water reactor applications. The morphology of fabrication defects, including the size and shape of voids, is one of the key challenges that impacts cladding performance and guarantees reactor safety. Therefore, quantification of defects’ size, location, distribution, and leak paths is critical to determining SiC CMC in-core performance. This research aims to provide quantitative insight into the defect’s distribution under multi-scale characterization at different length scales before and after different Transient Reactor Test Facility (TREAT) irradiation tests. A non-destructive multi-scale evaluation of irradiated SiC will help to assess critical microstructural defects from production and/or experimental testing to better understand and predict overall cladding performance. X-ray computed tomography (XCT), a non-destructive, data-rich characterization technique, is combined with lower length scale electronic microscopic characterization, which provides microscale morphology and structural characterization. This paper discusses a fully automatic workflow to detect and analyze SiC-SiC defects using image processing techniques on 3D X-ray images. Following the XCT data analysis, advanced characterizations from focused ion beam (FIB) and transmission electron microscopy (TEM) were conducted to verify the findings from the XCT data, especially quantitative results from local nano-scale TEM 3D tomography data, which were utilized to complement the 3D XCT results. In this work, three SiC samples (two irradiated and one unirradiated) provided by General Atomics are investigated. The irradiated samples were irradiated in a way that was expected to induce cracking, and indeed, the automated workflow developed in this work was able to successfully identify and characterize the defects formation in the irradiated samples while detecting no observed cracking in the unirradiated sample. These results demonstrate the value of automated XCT tools to better understand the damage and damage propagation in SiC-SiC structures for nuclear applications.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2025

Mechanical properties, strain hardening, and fracture behavior of ultrasonic additively manufactured Zircaloy-4 after low-temperature neutron irradiation

Ultrasonic additive manufacturing (UAM) is a solid-state, layer-by-layer advanced manufacturing process that has the potential to create custom spatially controlled composites with embedded wires and sensors for nuclear component manufacture. For this work, to assess the feasibility of using UAM for nuclear-relevant materials research, the technique was used to produce a 3.5-mm-thick Zircaloy-4 plate for irradiation testing. The UAM Zircaloy-4 specimens were irradiated in the High Flux Isotope Reactor at a target irradiation temperature of 117 °C to 2.9 displacements per atom (dpa) to assess differences in irradiation-hardening behavior as a function of alloy processing path. The UAM and reference baseplate (BP) materials increased in yield strength by 372±27 MPa and 346±21 MPa, respectively, and both suffered significant reductions in uniform and total elongation attributed to irradiation hardening at low-temperature. Although the materials had similar nanoscale defect structures, including nanoscale black dot/loop features and strain-induced dislocation channels, the UAM material’s processing-related defects resulted in accelerated strain localization and failure as demonstrated by lower post-irradiation uniform elongation of UAM specimens (0.5 %) compared to BP (1.5 %) material. The UAM material also showed considerable anisotropy in mechanical response due to crack propagation along weld boundaries, resulting in differences in strength & ductility when tested parallel and perpendicular to the prior UAM build orientation. Therefore, although the fundamental irradiation response of UAM-processed Zircaloy-4 was phenomenologically comparable to that of BP reference material, additional optimization of the UAM processing is needed to produce irradiation-resistant and nuclear-relevant materials.

Digital image correlation↗
DOE OSTI2025

Probability Density Function for the spatial and intensity distribution of neutron-induced defects in Silicon

The ability to model semiconductor device degradation under neutron irradiation depends upon having a robust modeling capability for the neutron-induced collision cascades as well as a means to analytically fit the resulting probability distributions of defect production and ionizing energy deposition for purposes of extrapolation to low-probability, high-consequence scenarios. In this paper, the widely-utilized binary collision approximation codes MARLOWE and SRIM are deployed in conjunction with a critical examination of their parameterizations as benchmarked against higher-fidelity molecular dynamics simulations. A simple 3-parameter form described by the Generalized Logistic Distribution is shown to be a good fit to Frenkel pair and ionization intensity distributions in bulk silicon. The BCA codes are then applied to simulate cascades in 5 nm layers of a representative gate-all-around nanosheet transistor, where joint probability distributions of threshold levels of damage to multiple layers are evaluated.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Irradiation-Induced Structural Disorder and Its Influence on the Mechanical Response of Polycrystalline MoS2

Molybdenum disulfide (MoS2) thin films are widely used as dry-film lubricants and protective coatings in aerospace and other radiation-exposed environments. Conventional synthesis routes produce polycrystalline films whose grain boundaries and other native defects cause their mechanical and tribological behavior to differ substantially from that of ideal single crystals. Under irradiation, these films progressively evolve from polycrystalline structures, composed of layered MoS2 grains, into highly disordered and eventually amorphous structures, altering both their tribological performance and mechanical integrity. Here, we employ reactive atomistic simulations to investigate irradiation-driven structural evolution in bulk polycrystalline MoS2. Using controlled primary knock-on atom (PKA) events, we characterize the progressive transition from a polycrystalline microstructure to an amorphous network by tracking defect accumulation and structural disorder. We then establish how this transition modifies the dominant deformation mechanisms and the temperature-dependent tensile response. Specifically, irradiation suppresses interlayer sliding and delamination, mechanisms which facilitate the deformation of the pristine polycrystal, resulting in defect-induced hardening. Broadly, our results establish direct process–structure–property relationships linking irradiation-induced defect accumulation, microstructural evolution, deformation mechanisms, and mechanical behavior, providing an atomistic framework for understanding the structural integrity and long-term reliability of irradiated MoS2 coatings.

Moore, Daniel [Sandia National Laboratories (SNL)]↗
DOE OSTI2026

Thermoreflectance Detection of Point Defects Resulting from Focused Ion Beam Milling

Focused ion beam (FIB) milling is a commonly used tool for nanoscale material processing, such as for transmission electron microscopy (TEM) sample preparation, or the creation of fiducial markers prior to other processes and measurements. During milling, a high energy ion beam is used to remove material via sputtering. The expelled target material may return to the sample surface however, affecting subsequent measurements. Beam spreading or irradiation due to neutral gallium may also irradiate a larger area than intended. Extensive research has explored the effects of FIB milling on the prepared TEM sample, but few have looked at the effects of milling on the properties of the sample surrounding the milled region. We use multiple pump-probe laser-based techniques (time domain thermoreflectance and steady-state thermoreflectance) to measure the spatial extent of FIB-induced surface/subsurface changes on a series of silicon wafers milled at multiple currents and doses. We supplement these measurements with high-resolution scanning transmission electron microscopy, energy dispersive X-ray spectroscopy, stylus profilometry, and time-of-flight secondary ion mass spectroscopy. We find a sample surface affected by the FIB up to 1 mm from where milling occurred, with a notable dependence on the ion beam current. We also note remarkably high sensitivity to surface defects using the thermoreflectance metrologies, including detection where other measurements failed.

defects↗
DOE OSTI2022

Inferring relative dose-dependent color center populations in proton irradiated thoria single crystals using optical spectroscopy

In this work, we have utilized photoluminescence spectroscopy and optical ellipsometry to characterize the dose-dependence of the photoluminescence emission intensity and changes in optical absorption of thoria single crystals subject to irradiation with energetic protons at room- and elevated-temperatures. The photoluminescence peaks and the optical absorption bands are attributed to creation of new electronic states emerging from defects resulting from displacement damage. These bands are most likely associated with electrons trapped at the oxygen vacancy sites similar to color centers formed in other irradiated oxides and halides. Our experimental observations are supported by a standard density functional theory calculation of the electronic structure in pristine and oxygen vacancy-bearing thoria crystals. The dose-dependence of the intensity of the photoluminescence peaks is used to parameterize a rate theory model that estimates the concentration of color centers in the irradiated crystals. This parameterization provides optimized migration barrier parameters for oxygen interstitials and vacancies that simultaneously capture the optical response of the crystals irradiated at room- and elevated-temperature. These optical spectroscopy techniques offer a promising pathway to characterize the population of color centers formed at the sites of oxygen anion vacancies, particularly in irradiated nuclear fuels, where atomic-level defects cannot be readily imaged using electron microscopy. When combined with other direct and indirect characterization tools, our approach can provide new insight into defect formation and accumulation in energy materials over single atomic to extended length scales.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mesoscale Modeling of Dislocation Cell Structure Evolution and Radiation-Induced Segregation in Additively Manufactured Austenitic Stainless Steel

Structural alloys under irradiation develop radiation-induced segregation (RIS) at point defect sinks, which lead to undesired changes in the alloy's properties. Additively manufactured austenitic stainless steels are expected to yield a distinct response to irradiation damage owing to their unique as-printed dislocation cell structure. In this talk, we present the development of a mesoscale model for dislocation cell structure evolution coupled with RIS using the MOOSE framework. The evolution of network dislocations within spatially distinct cells and cell walls are modeled using climb-mediated edge annihilation and generation processes. Starting with initial microstructures of as-printed non-equilibrium segregations at dislocation cell walls, our 2D and 3D simulations explore the effects of irradiation temperature, dose rate, dislocation sink bias, and specimen thickness on microstructure evolution. The results will be compared against experimental characterizations of in-situ and ex-situ ion-irradiated samples, and the implications of evolving cell structure on irradiation damage response will be discussed.

additive manufacturing↗
DOE OSTI2023

Study of perovskite CsPbBr 3 detector polarization and its mitigation with ultrahigh x-ray flux

High-flux capable semiconductor x-ray detectors are essential in various applications, but the detrimental effects of detector polarization limit their use in many cases. Here, for this work, we studied the polarization of perovskite CsPbBr 3 semiconductor detectors using ultrahigh flux synchrotron x rays (10 6 –10 12 photons s –1 mm –2 at 58.61 keV). The CsPbBr 3 detectors did not show immediate polarization prominently until a flux higher than 10 10 photons s –1 mm –2 . Using the pump-and-probe technique, we visualized the spatial and temporal effects of polarization. The polarized region, represented by reduced photocurrent, extended beyond the area under direct irradiation, and the reduced photocurrent persisted after potential de-polarization treatments. We found that stronger applied electric fields and fewer carrier traps can mitigate polarization, represented by less photocurrent deficit. By examining the detectors’ current response under controlled ambient light, low, and high-flux x rays, we studied the trap filling and release behavior of CsPbBr 3 . We discovered that the polarization is caused by partial detector damage due to deep defects generated by ultrahigh flux x-ray irradiation. Our work provides insight into CsPbBr 3 polarization under extremely intense x-ray radiation and shows that reducing crystal defects and increasing detector bias voltage are effective solutions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Impact of Low-Temperature Neutron Irradiation on Tensile Behavior of Base Metal and Electron-Beam Welded 316L Stainless Steel

Here, a study of 316L type stainless steel in its base metal and electron-beam (e-beam) welded conditions was performed to observe the effects of low-temperature (60 °C to 100 °C) neutron irradiation on the tensile behavior of the samples. Fractography was used in understanding the tensile-tested fracture surfaces of the 316L samples in these different forms with the characterization of the both base metal and welded samples using electron microscopy. Irradiation of the tensile specimens made free of defects of cutting and mechanical polishing showed a reduction in their tensile ductility with increased radiation-induced hardening up to 1.40 × 10 19 n/cm 2 (E > 0.1 MeV) fluence that corresponds to 1.1x 10 -2 dpa, even at the low irradiation temperatures. These low-temperature neutron irradiated base metal and e-beam welded 316L specimens also consisted of closely similar fracture surfaces characteristic of ductile rupture.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Linker Contribution toward Stability of Metal–Organic Frameworks under Ionizing Radiation

Here, the effects of radiation on a series of UiO derivative metal–organic frameworks (MOFs) that contain the same zirconium hexamer node and similar organic linkers, UiO-66, UiO-66–NH 2 , UiO-66–OH, and NU-403, were examined using γ-rays and 5 MeV He ions. UiO-66, UiO-66–NH2, and UiO-66–OH contain aromatic linkers and are significantly more stable to radiation than NU-403. Of these, UiO-66 is the most radiation resistant, displaying crystalline features up to 47 MGy of He-ion irradiation. MOFs containing aromatic linkers functionalized by electron-donating groups, UiO-66–NH 2 and UiO-66–OH, retained crystalline features up to 19 MGy. NU-403 contains aliphatic rings and is the least radiation-resistant MOF studied here. NU-403 exhibits small changes in infrared spectra upon 3 MGy of γ-irradiation and significant damage upon 10 MGy of He-ion irradiation. Diffraction data revealed radiation-induced defect formation. Structural locations of radiation-induced breakdown were interrogated experimentally and via density functional theory. The results indicated changes in the carboxylate (-OCO) of the linker and μ 3 -OH vibrational modes, suggesting that introduction of an aliphatic linker into the MOF renders the connection between the linker and metal node most susceptible to radiation damage. This study reveals that the choice of the linker is crucial in designing a radiation-resistant MOF.

36 MATERIALS SCIENCE↗