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An article, such as, but not limited to, a cable strap to wrap, support, or secure one or more wires or cables, is formed by cyclically heating and cooling and/or irradiating an article formed of a static dissipative ethylene tetrafluoroethylen (ETFE) resin, to reduce an electrical resistivity and/or to increase a tensile strength of the article.
Per- and polyfluoroalkyl substances (PFAS) are persistent environmental contaminants that resist conventional water treatment due to the strength of their carbon fluorine bonds. Electron-beam irradiation has shown potential for PFAS degradation; however, its effectiveness is limited by shallow energy penetration, restricting treatment to the upper region of the water surface. This project addresses this limitation through the design of a compact mixing chamber and recirculation system to enhance surface renewal and improve treatment efficiency. The system, constrained to approximately 10 cm 20 cm 20 cm, was developed using computer-aided design, computational fluid dynamics (CFD), and MATLAB-based hydraulic analysis to evaluate flow behavior, head loss, and pump compatibility. A perforated-baffle geometry and controlled flow range of 1 3 GPM were implemented to promote uniform mixing while maintaining a stable free surface for electron-beam exposure. Modeling results indicate improved flow distribution and reduced dead zones, supporting more consistent interaction between contaminated water and the beam. The final design enhances hydrodynamic performance within system constraints, contributing to scalable electron-beam water treatment technologies for improved PFAS degradation.
Oxide Dispersion Strengthened (ODS) alloys are considered as promising nuclear materials for the next generation advanced nuclear reactors due to their improved elevated temperature mechanical properties and radiation damage resistance. MA956 is a commercial ODS alloy with superior oxidation resistance and creep strength at elevated temperatures. The improved properties for ODS alloys can be attributed to the presence of dispersed nanosized oxide particles. These oxide particles can act as barriers to dislocation motion and provide additional sinks and sites for point defect recombination. Hence, their stability can greatly affect the properties of the irradiated ODS alloys. Besides, irradiation will induce defects into the ODS alloys, and these defects can develop further as irradiation dose increases. Furthermore, the defects propagation can significantly undermine the mechanical properties of the bulk materials, resulting in irradiation hardening and lower ductility. Therefore, it is necessary to have a good understanding of the defect’s evolution with irradiation. Hence, efforts are ongoing to understand the effect of ion irradiation on ODS MA956 with emphasis on oxide particles and evolution of defects as a function of dose (2.5, 50 and 100 dpa).
Light-sensitive capacitance variation of Bi 0.95 La 0.05 FeO 3 (BLFO) ceramics has been studied under violet to UV irradiation. The reversible capacitance enhancement up to 21% under 405 nm violet laser irradiation has been observed, suggesting a possible degree of freedom to dynamically control this in high dielectric materials for light-sensitive capacitance applications. By using ultraviolet photoemission spectroscopy (UPS), we show here that exposure of BLFO surfaces to UV light induces a counterintuitive shift of the O 2p valence state to lower binding energy of up to 243 meV which is a direct signature of negative electronic compressibility (NEC). A decrease of BLFO electrical resistance agrees strongly with the UPS data suggesting the creation of a thin conductive layer on its insulating bulk under light irradiation. By exploiting the quantum capacitance model, we find that the negative quantum capacitance due to this NEC effect plays an important role in this capacitance enhancement.
Various common crystalline silicon cell technologies were exposed to UVA radiation (1.24 Wm-2 nm-1 at 340 nm peak) on the front and back faces at 45 degrees Celsius for periods up to 3000 h, representing about 3 y of solar exposure in Phoenix, Arizona, USA. The resulting degradation of the open-circuit voltage and short-circuit current is presented. Of the various cell types examined, significant levels of degradation were seen in all cases. Less degradation was generally found after UV irradiation of cell fronts and older cell types, whereas a bifacial PERC type exposed on the rear showed about 25% degradation in short circuit current, attributable to lack of a diffused surface field. Selected cells were exposed to UV irradiation with the addition of long pass UV filters to replicate UV-absorbers in encapsulants. Modern cell designs are sensitive to UV-ID because of reduced or eliminated front and back surface field and increased dependence on high quality surface passivation. Single transformation of the independent variable (t, kW h/m^2) could be used to achieve a linear model of the data to extrapolate to 50 y. Solar Advisor Model (SAM) shows appropriate filtering of UV-irradiation can improve LCOE and net present value of plant. Some advanced cell types are seen to be UV-resistant (cell level solutions also exist). Solutions therefore exist on the cell, glass, and encapsulant level. Changes over time in each of these would also need to be considered (solarization, encapsulant browning...).
With the great demand for high radiation tolerant materials for advanced nuclear energy technologies, Fe-Cr alloys are at the forefront with long standing validated performance. Yet, the real mechanism behind their high radiation resistance is in question and understanding the effect of varying Cr percentage is a grand challenge limiting further improvements. Here we applied depth resolved atomic scale probe of defects to uncover the real mechanism on how Cr improves radiation resistance and explain the controversial impact of increasing Cr percentage. By combining depth-resolved positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy we investigated the effect of Cr alloying on the formation and evolution of atomic size clusters induced by ion irradiation in Fe. We also used atom probe tomography to investigate the possible presence of Cr clusters or a’ phase with high Cr composition. The study reveals that the well-known resistance to radiation in Fe-Cr alloys arises from the stabilization of vacancy clusters around Cr atoms which act as sinks for radiation-induced defects. Thus, Cr atoms do not provide a direct sink for interstitials; rather defect complexes for that consist of Cr atoms and vacancies in turn act as sinks for irradiation-induced vacancies and interstitials. Most importantly, we find that lower amounts of Cr create smaller, uniformly distributed defect clusters that act as efficient sinks for radiation damage, but larger quantities of Cr form a defect structure that is less homogenous in size and spatial distribution, resulting in less efficient damage recombination. No evidence of phase a’ was found before or after irradiation, which indicates that it does not contribute to the observed radiation tolerance.
A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.
This report documents results of the post-irradiation examination material property testing of the creep, control, and piggyback specimens from the irradiation creep capsule Advanced Graphite Creep (AGC)-2 are reported. This is the second of a series of six irradiation test trains planned as part of the AGC experiment to fully characterize the neutron irradiation effects and radiation creep behavior of current nuclear graphite grades. The AGC-2 capsule was irradiated in the Idaho National Laboratory Advanced Test Reactor at a nominal temperature of 600°C and to a peak dose of 5 dpa (displacements per atom). One half of the creep specimens were subjected to mechanical stresses (an applied stress of either 13.8, 17.2, or 20.7 MPa) to induce irradiation creep. All post-irradiation testing and measurement results are reported with the exception of the irradiation mechanical strength testing, which is the last destructive testing stage of the irradiation testing program. Material property tests were conducted on specimens from 15 nuclear graphite grades using a similar loading configuration as the first AGC capsule (AGC-1) to provide easy comparison between the two capsules. However, AGC-2 contained an increased number of specimens (i.e., 487 total specimens irradiated) and replaced specimens of the minor grade 2020 with the newer grade 2114. The data reported include specimen dimensions for both stressed and unstressed specimens to establish the irradiation creep rates, mass and volume data necessary to derive density, elastic constants (Young’s modulus, shear modulus, and Poisson’s ratio) from ultrasonic time of flight velocity measurements, Young’s modulus from the fundamental frequency of vibration, electrical resistivity, and thermal diffusivity and thermal expansion data from 100–500°C. No data outliers were determined after all measurements were completed. A brief statistical analysis was performed on the irradiated data and a limited comparison between pre- and post-irradiation properties is presented. A more complete evaluation of trends in the material property changes, as well as irradiation-induced creep due to irradiation, temperature, and applied load on specimens will be discussed in later AGC-2 post-irradiation examination analysis reports.
Heteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage.
To obtain information on the origin of radiation-induced genomic instability, we characterized a total of 166 clones that survived exposure to (56)Fe particles or (137)Cs gamma radiation, isolated approximately 36 generations after exposure, along with their respective control clones. Cytogenetic aberrations, growth alterations, responses to a second irradiation, and mutant frequencies at the Na(+)/K(+) ATPase and thymidine kinase loci were determined. A greater percentage of clones that survived exposure to (56)Fe particles exhibited instability (defined as clones showing one or more outlying characteristics) than in the case of those that survived gamma irradiation. The phenotypes of the unstable clones that survived exposure to (56)Fe particles were also qualitatively different from those of the clones that survived gamma irradiation. A greater percentage (20%) of the unstable clones that survived gamma irradiation than those that survived exposure to (56)Fe particles (4%) showed an altered response to the second irradiation, while an increase in the percentage of clones that had an outlying frequency of ouabain-resistant and thymidine kinase mutants was more evident in the clones exposed to (56)Fe particles than in those exposed to gamma rays. Growth alterations and increases in dicentric chromosomes were found only in clones with more than one alteration. These results underscore the complex nature of genomic instability and the likelihood that radiation-induced genomic instability arises from different original events.
Nuclear materials testing is commonly completed in various material test and research reactors throughout the world, including the Advanced Test Reactor (ATR), but the current capsule design, analysis, and fabrication process can take years to complete. To decrease the costs and time associated with materials testing, a standard capsule has been designed which houses various specimen geometries and allows irradiation in virtually any ATR test position. The standard capsule features locking end caps which connect and lock together to form the capsule stack, eliminating the need for a basket and maximizing the quantity of specimens which are contained within the capsule. A customizable internal gas gap provides thermal resistance between the specimens and reactor coolant, making specimen temperatures from approximately 370 to 1000 K achievable. The flexibility of the capsule design allows experimenters to choose irradiation positions based off desired neutron flux, with typical fluences per cycle ranging from 8.8x10 19 to 2.3x10 21 n/cm 2 , depending on experiment position. Here this paper presents and discusses the standard capsule design and analysis.
Current HER2-targeted therapies including monoclonal antibodies, antibody-drug conjugates (ADCs) and small-molecule tyrosine kinase inhibitors face limitations such as hepatotoxicity, development of treatment resistance, and subsequent disease relapse. To overcome these challenges, this study combines the specificity of a HER2-targeting affibody molecule (Z HER2:2891 -Cys) with the photothermal properties of gold nanorods (AuNRs), forming bioconjugates (Affi–AuNRs) for selective treatment of HER2-positive cancer cells. Affi–AuNRs were fabricated via a two-step surface modification: (i) ligand exchange to displace cetyltrimethylammonium bromide (CTAB) with poly(ethylene glycol) methyl ether thiol (mPEG-SH), and (ii) covalent attachment of the affibody molecule via Au–S chemistry. Affi-AuNRs exhibited a photothermal conversion efficiency of 64 ± 5%, comparable to that of CTAB-stabilized AuNRs (59 ± 4%). Confocal microscopy confirmed that Affi-AuNRs are selectively internalized by HER2-positive SKOV-3 cells, with minimal uptake by HEK293T cells, which have low HER2 expression. Upon exposure to 808 nm near-infrared (NIR) LED irradiation (408 mW cm –2 , 15 min), Affi-AuNRs significantly reduced SKOV-3 cell viability by 85 ± 9% (p < 0.001) relative to untreated controls with no detectable cytotoxicity in HEK293T cells. These results demonstrate HER2-selective photothermal cytotoxicity mediated by Affi–AuNRs under defined 808 nm LED irradiation conditions, supporting their continued development as nanotheranostic tools that integrate affibody-mediated specificity with plasmonic heating.
The experimental procedure consists of the measurement of the Hall coefficient, resistivity, and Hall mobility as a function of temperature of a sample of gallium arsenides before and after irradiation with low and high energy protons. Work has begun on the development of the theory and subsequently experiments will be designed and performed.
Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated.
Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.
Tardigrades are small aquatic animals that are known for their ability to tolerate extreme dessication as well as ionizing radiation. The extent to which different tardigrade species are able to survive extreme doses of radiation has been previously defined, yet the molecular mechanisms underlying such radiation resistance has not been fully characterized. In Ramazzottius varieornatus, high dose radiation resistance been attributed to the presence of a tardigrade-unique DNA-associated protein Dsup, a protein that facilitates in the reduction of DNA fragmentation immediately after radiation exposure. This suggests that tardigrades possess a unique set of proteins that confer enhanced DNA protection as opposed to DNA repair. Previous studies have suggested that tolerance to radiation resistance in the tardigrade Hypsibius dujardini is inversely correlated with cellular division and mitotic activity, yet the molecular mechanisms and identities of such radiation resistance are poorly understood. In the current study, we plan to examine DNA damage by X-ray irradiation of metabolically active Hypsibius dujardini at three different developmental stages (egg, juvenile and adult) to quantitate the relative amount of double-strand breaks per unit DNA. These values will be compared to quantitation using Deinococcus radiodurans and Saccharomyces cerevisiae, at similar X-ray doses. X-ray exposure of D. radiodurans induces many double-stranded DNA breaks from which recovers by efficient repair. S. cerevisiae is not inherently radiation tolerant. Protection of DNA would be evidenced by reduced numbers of DNA double strand breaks in H. dujardini per unit DNA relative to the other two species.
Temperature measurement is a key factor in the safe and reliable operation of nuclear reactors. Thermocouples and resistance temperature detectors (RTDs) are among the most common and reliable tools deployed for temperature measurement, and some are capable of operating in extreme environments such as very high temperature and neutron radiation fields anticipated in nuclear thermal propulsion (NTP) or fission surface power. These devices are known to exhibit drifting behavior in their temperature readings throughout their operational lifetimes. Here, to help select appropriate instrumentation, it is important to identify the factors that influence drift as well as typical behavior in these environments. This work is focused on identifying contributing factors in the performance of thermocouples and RTDs. An extensive literature review is included that discusses several experimental results in different environments. Although individual instrument performance may vary with construction methods, materials selection, and vendors, this review aims to assist in the selection process and identify typical expected behaviors of several devices.
Zirconium diboride (ZrB 2 ) is a ultra-high temperature ceramic with high melting temperature (>3000 K), super strength and hardness, good thermal conductivity, and excellent resistance to plasma erosion and chemical erosion, being widely applied in hypersonic flight, arc-electrodes, refractory materials, and plasma-facing materials in fusion reactors. Therefore, the structural stability of the material is essential for the applications. Up to now, the material was investigated under neutron irradiation and high-energy ion irradiations. It was reported that the neutron irradiation caused swelling and catastrophic cracking. High-energy ions (30 keV He + ) changed the surface morphology and caused the bright blue and brown colors on ZrB 2 surfaces between 920 K and 1120 K. The electron irradiation tolerance of the material has not been reported yet. Here we used convergent beam electron diffraction (CBED) and energy-dispersive X-ray spectroscopy (EDS) to investigate structural tolerances of ZrB 2 crystals under high-energy electrons at room temperature under vacuum. Finally, the investigation would benefit the understanding of its structural tolerance at microscales.