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A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.
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Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.
Silicon solar cell analysis and fundamental measurements, silicon cell technology, gallium arsenide research and technology, and radiation effects on silicon and gallium arsenide cells, are reported.
A key to the success of this program was the breakthrough development of a technology for producing ultra-thin silicon slices which are very flexible, resilient, and tolerant of moderate handling abuse. Experimental topics investigated were thinning technology, gaseous junction diffusion, aluminum back alloying, internal reflectance, tantalum oxide anti-reflective coating optimization, slice flexibility, handling techniques, production rate limiting steps, low temperature behavior, and radiation tolerance.
Efforts were concerned with optimizing techniques for thinning silicon slices in NaOH etches, initial investigations of surface texturing, variation of furnace treatments to improve cell efficiency, initial efforts on optimization of gridline and cell sizes and Pilot Line fabrication of quantities of 2 cm x 2 cm 50 micron thick cells.
A voltage multiplier having a capacitor-diode voltage multiplying network is disclosed which is fed with voltage pulses from a dc source through a first switching means. Pulses of a second polarity are also supplied through a second switching means to the input of the capacitor-diode voltage multiplier from a second dc source whose voltage is adjustable to change the voltage of the pulses of second polarity. The switching means are alternately rendered conducting by signals from a control circuit. The second dc source may be controlled by a voltage comparator which compares the output voltage of the capacitor-diode voltage multiplier to the reference source.
A copper laser utilizing copper bromide as a lasant and neon as the buffer gas has been operated at an average laser power of between 16 and 19.5 W for a period of 68 h. Lasing was attained at a pulsing rate of 16.7 kHz in a quartz discharge tube 2.5-cm in diameter with an electrode separation of 200 cm. The laser energy/pulse and peak power/pulse corresponding to an average power of 19.5 W are 1.2 mJ and 30 kW, respectively. The ratio of laser power at 510.6 and 578.2 nm varied from 3.9 to 1.1 corresponding to a total average laser power of 4 and 18 W, respectively. The highest wall plug and capacitor efficiency measured during 68 h of operation were 0.7 and 1.1%, respectively.
Vertical axis wind turbine incorporates several unique features to extract more energy from wind increasing efficiency 20% over conventional propeller driven units. System also features devices that utilize solar energy or chimney effluents during periods of no wind.
Experimental technology advances were implemented to increase the conversion efficiency of ultrathin 2cm x 2cm cells, to demonstrate a capability for fabricating such cells at a rate of 10,000 per month, and to fabricate 200 large-area ultrathin cells to determine their feasibility of manufacture. A production rate of 10,000 50 micron m cells per month with lot average AM0 efficiencies of 11.5% was demonstrated, with peak efficiencies of 13.5% obtained. Losses in most stages of the processing were minimized, the remaining exceptions being in the photolithography and metallization steps for front contact generation and breakage handling. The 5cm x 5cm cells were fabricated with a peak yield in excess of 40% for over 10% AM0 efficiency. Greater fabrication volume is needed to fully evaluate the expected yield and efficiency levels for large cells.
GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.
Progress in the effort to increase the end-of-life efficiency of solar cells for space use is assessed. Silicon solar cell efficiency, radiation effects, and gallium arsenide cells are emphasized.
A new silicon solar cell is described which has an array of small-area conduction paths to transport current directly through the wafer to metal electrodes on the back. This design eliminates grid shadowing and many of the other losses inherent in conventional cells. Early experimental units without texturing or antireflection coatings show 13.3% efficiency under air-mass-one illumination insolation.
Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.
The monolithic multijunction converter is an attractive approach to achieving solar/electric conversion with greater than 30% efficiency. A major technical challenge in the development of such devices is the requirement for low resistance, optically transparent intercell contacts between adjacent junctions. These contacts should transmit, without significant loss, the spectral fraction of the incident sunlight which is not absorbed and converted in the overlying junction materials. Their contact resistances must be low enough to prevent significant I to the 2d power R loss at the designed current density levels. They should also exhibit adequate thermal conductivity to prevent device overheating when subjected to the designed illumination level. Recent encouraging results for the development of such contacts are presented.
Alternate processing technologies were developed and introduced into the pilot line with a resulting increase in the efficiency of the thin cells. The introduction of an aluminum paste alloy technique for the formation of a back surface field represents a significant advance over previous techniques. The fabrication and results for quantities in excess of 2000 2 cm x 2 cm thin cells and 1000 5 cm x 5 cm thin cells are described. Substantial improvement in performance and yield of the thin cells were obtained. The overall yield of the 2 cm x 2 cm pilot line was better than 38%, while the best lot yield was greater than 51%. The average power density of the 2 cm x 2 cm cells was approximately 16.8 mW/sq cm with an average AMO (at 25 C) efficiency of 12.4%. The lot yield of the 5 cm x 5 cm pilot line improved from only 7% at the beginning of the operation to better than 17% as experience was gained. The average 5 cm x 5 cm thin cell had an AMO efficiency (at 25 C) of 11.5%.