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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations.

Szofran, Frank R.↗
NASA NTRS1999

Small Engine Technology (SET) - Task 14 Axisymmetric Engine Simulation Environment

As part of the NPSS (Numerical Propulsion Simulation System) project, NASA Lewis has a goal of developing an U.S. industry standard for an axisymmetric engine simulation environment. In this program, AlliedSignal Engines (AE) contributed to this goal by evaluating the ENG20 software and developing support tools. ENG20 is a NASA developed axisymmetric engine simulation tool. The project was divided into six subtasks which are summarized below: Evaluate the capabilities of the ENG20 code using an existing test case to see how this procedure can capture the component interactions for a full engine. Link AE's compressor and turbine axisymmetric streamline curvature codes (UD0300M and TAPS) with ENG20, which will provide the necessary boundary conditions for an ENG20 engine simulation. Evaluate GE's Global Data System (GDS), attempt to use GDS to do the linking of codes described in Subtask 2 above. Use a turbofan engine test case to evaluate various aspects of the system, including the linkage of UD0300M and TAPS with ENG20 and the GE data storage system. Also, compare the solution results with cycle deck results, axisymmetric solutions (UD0300M and TAPS), and test data to determine the accuracy of the solution. Evaluate the order of accuracy and the convergence time for the solution. Provide a monthly status report and a final formal report documenting AE's evaluation of ENG20. Provide the developed interfaces that link UD0300M and TAPS with ENG20, to NASA. The interface that links UD0300M with ENG20 will be compatible with the industr,, version of UD0300M.

Miller, Max J.↗
NASA NTRS1999

Design and Performance of the HESSI Cryostat

The High Energy Solar Spectroscopic Imager (HESSI) spacecraft, to be launched in July 2000, will be used to observe the Sun with the finest angular and energy resolutions ever achieved from a few keV to hundreds of keV. The spacecraft will use an array of nine germanium (Ge) detectors, each 7.1 cm in diameter and 8.5 cm long, operating at 75K. The detectors are mounted in a cryostat on a common cold plate, and cooled by a small Stirling-cycle cryocooler. This paper describes the design of the cryostat, special accommodations for the Ge detectors, interfaces with the cryocooler, and thermal performance of the engineering test unit.

Boyle, R.↗
NASA NTRS1994

NASA-OAI HPCCP K-12 Program

The NASA-OAI High Performance Communication and Computing K- 12 School Partnership program has been completed. Cleveland School of the Arts, Empire Computech Center, Grafton Local Schools and the Bug O Nay Ge Shig School have all received network equipment and connections. Each school is working toward integrating computer and communications technology into their classroom curriculum. Cleveland School of the Arts students are creating computer software. Empire Computech Center is a magnet school for technology education at the elementary school level. Grafton Local schools is located in a rural community and is using communications technology to bring to their students some of the same benefits students from suburban and urban areas receive. The Bug O Nay Ge Shig School is located on an Indian Reservation in Cass Lake, MN. The students at this school are using the computer to help them with geological studies. A grant has been issued to the friends of the Nashville Library. Nashville is a small township in Holmes County, Ohio. A community organization has been formed to turn their library into a state of the art Media Center. Their goal is to have a place where rural students can learn about different career options and how to go about pursuing those careers. Taylor High School in Cincinnati, Ohio was added to the schools involved in the Wind Tunnel Project. A mini grant has been awarded to Taylor High School for computer equipment. The computer equipment is utilized in the school's geometry class to computationally design objects which will be tested for their aerodynamic properties in the Barberton Wind Tunnel. The students who create the models can view the test in the wind tunnel via desk top conferencing. Two teachers received stipends for helping with the Regional Summer Computer Workshop. Both teachers were brought in to teach a session within the workshop. They were selected to teach the session based on their expertise in particular software applications.

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NASA NTRS1999

Germanium JFET for Cryogenic Readout Electronics

The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).

Das, N. C.↗
NASA NTRS2000

Float-Zone Growth of Gel-xSix (x ? 10 at .%) Single Crystals: Influence of Thermocapillary and Solutocapillary Convection

Gel-xSix (x ? 10 at.%) single crystals have been grown with the float-zone technique applied within a monoellipsoid mirror furnace. The feed crystal consisted of synthesized GeO.95siO.05 polycrystalline material. Two Boron-doped (much much more than 1-2 (raised dot) 1017 at/cm3) crystals were grown under identical conditions using <100> Ge seeds. One Ge:Ga-doped (much much more than 1018 at/cm3) reference crystal was also grown in the same furnace. Compositional profiles were measured with an energy dispersive analysis by X-ray (EDAX). The maximum silicon concentration attained was 10 at.%. Micrographs of the etched crystals show sharp changes in interface curvature at the crystal edges. These are considered to be caused by solutal Marangoni convection, whose strength is assumed to be a direct function of silicon concentration, Theoretical considerations show that the flow direction, velocity, and strength varies significantly from a solutal Marangoni convection regime directly in front of the solid-liquid interface to a thermal Marangoni convection regime within the bulk melt.

Campbell, Tom A.↗
NASA NTRS1999

Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

Mueller, C. H.↗
NASA NTRS2001

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have established the effects of different ampoule materials, temperature profiles, pressure differences, and silicon concentrations and that samples that are nearly completely detached can be grown repeatedly.

Szofran, F. R.↗
NASA NTRS2001

Wetting Angle and Surface Tension of Germanium Melts on Different Substrate Materials

The sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials. Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials. In addition, the effects of different cleaning procedures and surface treatments on the wetting behavior were investigated. The highest wetting angles with values around 170 deg. were found for pBN substrates under active vacuum or with a slight overpressure of 5N Argon or forming gas (2% Hydrogen in 5N Argon). The measurement of the surface tension and its temperature dependence for Ge under a forming gas atmosphere resulted in gamma(T) = 591 - 0.077 (T-T(sub m).

Kaiser, N.↗
NASA NTRS2001

Measurements of Thermophysical Properties of Molten Silicon and Geranium

The objective of this ground base program is to measure thermophysical properties of molten/ undercooled silicon, germanium, and Si-Ge alloys using a high temperature electrostatic levitator and in clearly assessing the need of the microgravity environment to achieve the objective with higher degrees of accuracy. Silicon and germanium are two of the most important semiconductors for industrial applications: silicon is unsurpassed as a microelectronics material, occupying more than 95% of the electronics market. Si-Ge alloy is attracting keen interest for advanced electronic and optoelectronic applications in view of its variable band gap and lattice parameter depending upon its composition. Accurate thermophysical properties of these materials are very much needed in the semiconductor industry for the growth of large high quality crystals.

Rhim, Won-Kyu↗
NASA NTRS2001

Effectiveness of Diffusion Barrier Coatings for Mo-Re Embedded in C/SiC and C/C

Advanced high-temperature cooling applications may often require the elevated-temperature capability of carbon/silicon carbide or carbon/carbon composites in combination with the hermetic capability of metallic tubes. In this paper, the effects of C/SiC and C/C on tubes fabricated from several different refractory metals were evaluated. Though Mo, Nb, and Re were evaluated in the present study, the primary effort was directed toward two alloys of Mo-Re, namely, arc cast Mo-41Re and powder metallurgy Mo-47.5Re. Samples of these refractory metals were subjected to either the PyC/SiC deposition or embedding in C/C. MoSi2(Ge), R512E, and TiB2 coatings were included on several of the samples as potential diffusion barriers. The effects of the processing and thermal exposure on the samples were evaluated by conducting burst tests, microhardness surveys, and scanning electron microscopic examination (using either secondary electron or back scattered electron imaging and energy dispersive spectroscopy). The results showed that a layer of brittle Mo-carbide formed on the substrates of both the uncoated Mo-41Re and the uncoated Mo-47.5Re, subsequent to the C/C or the PyC/SiC processing. Both the R512E and the MoSi2(Ge) coatings were effective in preventing not only the diffusion of C into the Mo-Re substrate, but also the formation of the Mo-carbides. However, none of the coatings were effective at preventing both C and Si diffusion without some degradation of the substrate.

Glass, David E.↗
NASA NTRS2001

2000 NASA Seal/Secondary Air System Workshop

The 2000 NASA Seal/Secondary Air System Workshop covered four main areas: (1) overviews of NASA-sponsored Ultra-Efficient Engine Technology (UEET) and Access to Space Programs, with emphasis on program goals and seal needs; (2) review of turbine engine seal issues from the perspective of end users such as United Airlines; (3) reviews of sealing concepts, test results, experimental facilities, and numerical predictions; and (4) reviews of material development programs relevant to advanced seals development. The NASA UEET overview illustrates for the reader the importance of advanced technologies, including seals, in meeting future engine system efficiency and emission goals. GE, Pratt & Whitney, and Honeywell presented advanced seal development work being performed within their organizations. The NASA-funded GE/Stein Seal team has successfully demonstrated a large (3-ft. diam) aspirating seal that can withstand all anticipated pressures, speeds, and rotor runouts anticipated for a GE90 L.P. turbine balance piston location. GE/Stein Seal are fabricating a full-scale seal to be tested in a GE-90 ground test engine in early 2002. Pratt & Whitney and Stein Seal are investigating carbon seals to accommodate large radial movements anticipated in future geared-fan gearbox locations. Honeywell presented a finger seal design being considered for a high-temperature static combustor location incorporating ceramic finger elements. Successful demonstration of the braided carbon rope thermal barriers to extreme temperatures (5500 F) for short durations provide a new form of very high temperature thermal barrier for future Shuttle solid rocket motor nozzle joints. The X-37, X-38, and future highly reusable launch vehicles pose challenging control surface seal demands that require new seal concepts made from emerging high temperature ceramics and other materials.

Steinetz, Bruce M.↗
NASA NTRS1996

Detector Arrays for an Airborne Infrared Echelle Spectrometer

The design of a long-slit echelle spectrograph covering the 16 - 210 micron range for use on the Stratospheric Observatory for Infrared Astronomy (SOFIA) is under study at NASA-Ames. This wavelength range is selected for its content of important astrophysical spectral lines accessible from an airborne platform, and availability of suitable detectors. Two dimensional arrays will be used to simultaneously provide spectral coverage in the dispersion direction and imaging in the cross-dispersion direction. Major goals are: (1) to reach sensitivities limited primarily by the background from the residual atmosphere and the telescope; (2) to provide imaging not far from the diffraction limit of the 2.5 meter (effective) aperture of the telescope; and (3) to obtain diffraction-limited spectral resolution from the large echelle grating, which means that the resolving power increases with decreasing wavelength. To meet these requirements, three detector types are forseen: a commercially available monolithic Si:Sb IBC array to cover the wavelength range from 16 to 40 microns, a Ge:Sb photoconductor array to cover the range from 40 to 125 microns, and a stressed Ge:Ga photoconductor array covering the range from 125 to 210 microns. The paper discusses details of the studies and plans for the field optics, detectors, and readouts.

Erickson, E. F.↗
NASA NTRS2002

Performance of the SBRC 190, a cryogenic multiplexer for photoconductor arrays

The SBRC 190 cryogenic readouts were developed for use with far-infrared arrays of Ge:Sb and Ge:Ga photoconductor detectors. The SBRC 190 provides an AC-coupled CTIA (capacitance transimpedance amplifier) unit cell for each detector and multiplexes up to 32 detectors. This paper presents our test results characterizing and optimizing the performance of these novel devices. We will discuss their basic behavior in addition to describing the trade-offs inherent in different sampling strategies.

Dotson, Jessie L.↗
NASA NTRS1996

Air Quality Monitor

The Stak-Tracker CEM (Continuous Emission Monitor) Gas Analyzer is an air quality monitor capable of separating the various gases in a bulk exhaust stream and determining the amounts of individual gases present within the stream. The monitor is produced by GE Reuter- Stokes, a subsidiary of GE Corporate Research & Development Center. The Stak-Tracker uses a Langley Research Center software package which measures the concentration of a target gas by determining the degree to which molecules of that gas absorb an infrared beam. The system is environmental-friendly, fast and has relatively low installation and maintenance costs. It is applicable to gas turbines and various industries including glass, paper and cement.

Source record↗
NASA NTRS2002

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

Szofran, F. R.↗
NASA NTRS2003

High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation

High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.

Alterovitz, S. A.↗
NASA NTRS2003

CdZnTe Background Measurements at Balloon Altitudes with PoRTIA

Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS Nal anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of Nal. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn and Te nuclei that radiatively decay; calculations are presented that indicate that these decays may explain most of the fully shielded CdZnTe background.

Parsons, A.↗