Low-, medium-, and high-spin states in the N = Z + 1 nucleus Ga 63
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High-power density inverters require efficient and small heat dissipation systems. For liquid cooling systems, an effective heat sink design is important to enable higher heat transfer and keep the pressure drop within reasonable limits. A heat sink geometry generated from an extruded, 1D fast Fourier transform can achieve more even temperature distribution and improved heat transfer than a conventional heat sink. Building on this concept, this paper proposes a new heat sink geometry creation algorithm. Instead of one plane profile being extruded, multiple plane profiles, each created from the fast Fourier transform method, are subsequently merged by smooth surfaces along the flow direction of the heat sink. Thus, a 3D heat sink geometry is created that enables 3D coolant flow and efficient heat transfer. The volume of this design was reduced by 50% compared with pin fin heat sinks. Compared with extruded 1D fast Fourier transform heat sinks, the proposed design showed an approximately 5% device temperature reduction and a 20% pressure drop reduction.
Abstract As for plants, far‐red (FR) light with wavelength from 700 nm to 740 nm is critical for processes of photosynthesis and photomorphogenesis. Light‐controlled development depends on light to control cell differentiation, structural and functional changes, and finally converge into the formation of tissues and organs. Phosphor converted FR emission under LED excitation is a cost‐effective and high‐efficient way to provide artificial FR light source. With the aim to develop an efficient FR phosphor that can promote the plant growth, a series of gadolinium yttrium gallium garnet (GYGAG) transparent ceramic phosphors co‐doped with Mn 2+ and Si 4+ have been fabricated via chemical co‐precipitation method, followed sintered in O 2 and hot isostatic pressing in this work. Under UV excitation, the phosphor exhibited two bright and broadband red emission spectra due to Mn 2+ : 4 T 1 → 6 A 1 spin‐forbidden transition, and one of which located in the right FR region. And then, Ce 3+ ions were co‐doped as the activator to enhance the absorption at blue light region and the emission of Mn 2+ . It turns out that the emission band of GYGAG transparent ceramic phosphors matches well with the absorption band of phytochrome P FR , which means they are promising to be applied in plant cultivation light‐emitting diodes (LEDs) for modulating plant growth. Besides, the thermal stability of this material was investigated systematically, and an energy transferring model involves defects was also proposed to explain the phenomenon of abnormal temperature quenching.
Over the last several decades, champion photovoltaic (PV) devices using CuInGaSe2 (CIGS) as the absorber material have been achieved using polycrystalline films exclusively. This has led to the assumption that polycrystalline CIGS generally outperform single-crystal CIGS in PV devices. However, recently, very high-quality epitaxial CIGS has been grown on GaAs substrates producing PV device efficiencies of 20.0%. These results have revived the debate on what effects grain boundaries have on PV device efficiencies. In this contribution, we compare the optoelectronic properties of polycrystalline CIGS films with those of high-efficiency epitaxial CIGS films. This comparison reveals that grain boundaries are associated with properties that negatively impact PV device efficiency. Additionally, we find that the grain interiors in polycrystalline films exhibit properties that are similar to the high-performance epitaxial films. Our results suggest that it may be possible to achieve higher device efficiencies with epitaxial CIGS than with polycrystalline films.
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