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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Design tradeoffs between traditional hexagonal and emerging cubic In X Ga (1–X) N/GaN-based green light-emitting diodes

Here, we report on the design tradeoffs between traditional hexagonal and emerging cubic In X Ga (1–X) N/GaN -based green (520 nm≤ λ ≤550 nm) light-emitting diodes with special emphasis on the electron blocking layer, number of quantum wells, and thicknesses of quantum wells and barriers. We identified three crucial design rules for cubic green light-emitting diodes: (1) no need for an electron blocking layer; (2) use of a wide quantum well; and (3) choice of thin quantum barriers in multi-quantum well light-emitting diode designs. These design rules increase the internal quantum efficiency of cubic green light-emitting diodes by ~30.5% under 100A/cm 2 injection with respect to traditional designs. Overall, the design rules of cubic light-emitting diodes and their differentiating nature from the traditional, hexagonal ones are crucial for the advent of next-generation cubic light-emitting diodes.

42 ENGINEERING↗
DOE OSTI2021

First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting numerous structural phases with unique optoelectronic properties that make them attractive candidates as ultra-wide bandgap (UWBG) semiconductors for next-generation power devices. Here we review the properties of AGO, focusing on theoretical results on the thermodynamics of Al incorporation and its consequences on the electronic structure. We review predictions and progress in experimentally realizing these alloys, as well as how composition influences important optoelectronic variables such as the band gap, band offsets, transport properties, and n-type dopability. A number of these parameters, such as the breakdown field (related to the band gap) and electron mobility, are discussed in assessing AGO in terms of relevant power device figures of merit. Altogether, the rapid progress and predicted properties highlight the promise of AGO as a model UWBG semiconductor platform with the potential to revolutionize power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Photoluminescence mapping of laser-damaged β-Ga 2 O 3

Here, photoluminescence (PL) mapping was utilized to investigate damage in β-Ga 2 O 3 epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV band were determined and plotted as a false-color image. Two types of damage were identified: circular damage and damage cracks. Circular damage shows lower UV PL intensity than the surrounding material with color centers in a “halo” around the damaged region. Damage cracks are aligned with the a and c axes and show higher PL intensity than undamaged material. Defects in the as-grown material were revealed by shifts in the UV band energy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Conventional single-gap $s-$wave superconductivity and hidden peak effect in single crystals of Mo$_8$Ga$_{41}$ superconductor

London and Campbell penetration depths were measured in single crystals of the endohedral gallide cluster superconductor, Mo _8 8 Ga _41 41 . The full temperature range superfluid density, \rho_s(T) ρ s ( T ) , is consistent with the clean isotropic s- s − wave weak-coupling BCS theory without any signs of the second gap or strong coupling. The temperature dependence of the Campbell length is hysteretic between zero-field cooling (ZFC) and field-cooling (FC) protocols, indicating an anharmonic vortex pinning potential. The field dependence of the effective critical current density, j_{c}(H) j c ( H ) , reveals an unusual result. While in the ZFC protocol, j_{c}(H) j c ( H ) is monotonically suppressed by the magnetic field, it exhibits a profound “hidden” peak effect in the FC protocol, that is, without a vortex density gradient. We suggest a possible novel mechanism for such a peak effect, which involves both static and dynamic aspects of vortex pinning.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Impact of K-Optimization on Trap Concentration in (Ag,Cu)(In,Ga)Se 2 Solar Cells

Recent progress has been made in improving efficiency in Cu(In,Ga)Se 2 (CIGS) absorbers with steady increases in peak efficiency. One way this has been achieved is by adding Ag to CIGS (ACIGS) to achieve higher V OC . However, these efficiencies are still well below the Shockley-Queisser efficiency limit, and traps acting as recombination centers and compensating centers are one thing limiting the solar efficiency. Past research in CIGS has shown that alkali treatment can improve the efficiency and metastability problems in CIGS, but less is understood about the role of alkali treatments in ACIGS. Here, we investigate the impact of potassium in ACIGS through its impact on trap incorporation and minority carrier lifetime. The samples in this study were grown in a roll-to-roll coater with Mo, ACIGS, CdS, and ZnO structure. Both cells were grown identically except the second (K-optimized) cell was grown with increased K-doping of the Mo contact and was more Cu-poor near the surface to optimize the K profile. This resulted in an efficiency increase from 16.8% to 18.7% for the K-optimized cell, which was mostly due to a 65 mV V OC increase. The doping profile showed a 2X increase in acceptor concentration of the K-optimized cell (2.5×10 15 cm -3 ) which suggests that the K was better incorporated into the ACIGS after these optimizations. To characterize the traps in these cells, deep level transient and optical spectroscopy were used. The DLOS measurements showed an EV+0.98 eV trap whose concentration was reduced 10X in the K-optimized cell (4×10 14 cm -3 ). This is consistent with previous results from the alkali treatment in CIGS, which also showed a decrease in near-conduction band trap concentration [1], but the reduction was larger than previous studies possibly indicating the combination of K and Cu-poor surface may both have aided in reducing the EV+0.98 eV trap concentration. The other primary trap is the mid-gap trap (EV+0.58 eV), which was quantified using DLTS. Its concentration decreased from 9×10 13 cm -3 to 4×10 13 cm -3 in the K-optimized sample, which is a 2X reduction. Previous studies have shown this trap is likely an efficient recombination center [2], which makes sense because it is near mid-gap. This trap has also been associated with V OC instability and reduction, so reducing this trap concentration is essential to achieve high V OC and cell efficiency. To help confirm this association, time-resolved photoluminescence measurements have shown in this sample set and a previous study that the minority carrier lifetime (19 ns baseline to 56 ns K-optimized) and this EV+0.56 eV trap concentration are inversely proportional, which would be expected for a recombination-limited carrier lifetime. The K optimization of ACIGS results in significantly improved cell efficiency and reduced trap concentrations that correlate with the improved material and electrical properties. We will report on this and the impact of the K optimization on the cell metastability.

14 SOLAR ENERGY↗
DOE OSTI2022

How does Ga doping of δ-Pu affect the phonons? [Slides]

As part of the LDRD-DR project “Aging and Metastability of Delta-Phase Plutonium,” largescale density functional theory calculations were performed to reveal details of how Ga doping affects the phonons of deltaphase Pu.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Influence of Mo- and Ga-Supported HZSM-5 Co-Catalyst Configuration in Microwave-Assisted Methane and Ethane Dehydroaromatization

Microwave (MW)-assisted dehydroaromatization (DHA) using an Mo-supported HZSM-5 catalyst (Mo/HZSM-5) enhances the value of natural gas resources by converting stranded or underutilized natural gas into value-added chemicals in modular microwave reactor systems. This approach offers the potential to generate economic value. However, natural gas mixtures often contain multiple components, including ethane (C2H6) and propane (C3H8), which complicate the reaction pathways. Ga-supported HZSM-5 (Ga/HZSM-5) catalysts are generally inactive toward CH4 but exhibit higher activity toward C2H6 and C3H8. Therefore, investigating the combination of Mo/HZSM-5 and Ga/HZSM-5 in various catalyst bed configurations is essential. This study explores different co-catalyst bed configurations and CH4/C2H6 feed compositions to determine the most effective way for enhanced natural gas conversion and benzene production.

cocatalyst bed configuration↗
DOE OSTI2021

Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se2 Thin Films

Cu(In,Ga)Se2 (CIGS) thin films were deposited at low temperature (350 °C) and high rate (10 µm/h) by a single stage process. The effect of post-deposition treatments at 400 °C and 500 °C by indium bromide vapor were studied and compared to the effect of a simple annealing under selenium. Structural, electrical, and chemical analyses demonstrate that there is a drastic difference between the different types of annealing, with the ones under indium bromide leading to much larger grains and higher conductivity. These properties are associated with a modification of the elemental profiles, specifically for gallium and sodium.

14 SOLAR ENERGY↗
DOE OSTI2023

Effect of Melt-Spinning Parameters on the Structure and Properties of Ni 55.5 Mn 18.8 Ga 24 Si 1.7 Heusler Alloy Ribbons

Ni–Mn-based Heusler alloys are known to demonstrate magnetic shape memory and giant magnetocaloric effect (MCE). These effects depend on the phases, crystallographic and magnetic phase transitions, and the crystallographic texture characteristics. These structural characteristics, in turn, are a function of the processing parameters. In the current work, Ni 55.5 Mn 18.8 Ga 24 Si 1.7 Heusler alloy was processed by melt-spinning under a helium atmosphere. This process results in a fine microstructure. The ribbon that was produced with a narrower nozzle width, faster wheel speed, and higher cast temperature, indicating a faster cooling rate, had double the magnetic entropy change close to room temperature. However, the other ribbon demonstrated a large entropy change over a broader temperature range, extending its usability. The effect of the melt-spinning process parameters on the developing microstructure, crystallographic structure and texture, transformation temperatures, and the magnetic entropy change were studied to explain the difference in magnetocaloric behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2025

2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

Alam, Md Tahmidul (ORCID:000900086556839X)↗