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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗
NASA NTRS2018

Building Reliable Printed Circuit Boards - the Lessons Learned

"Printed circuit boards (PCBs) are the baseline for electronics manufacturing upon which electronic components are mounted and formed into electronic systems. PCBs are used in a variety of electronic circuits from simple one-transistor amplifiers to large super computers. A PCB serves three main functions: 1) it provides the necessary mechanical support for the components in the circuit 2) it provides the necessary electrical interconnections, and 3) it bears some form of legend which identifies the components it carries. The failure modes on the PCBs can be categorized in a hierarchical structure, in which the mechanisms and causes are site or location dependant. This one day workshop will discuss a variety of failure mechanisms that effect the functionality of PCBs. These mechanisms can be related to how PCB materials are selected, PCBs are designed, manufactured, tested and used in the field conditions. The workshop will begin with an overview of PCB manufacturing, materials and processes. With the help of examples and case studies, a wide range of failure mechanisms will be discussed, case studies are focused on digital circuits, however some failures in analog, double sided boards are also presented. The workshop then provides the guideline for selection of methodologies for identifying potential failure mechanisms based on the failure history and how a systematic root cause failure analysis of the PCB can result in prevention of future issues."

Sood, Bhanu↗
DOE OSTI2024

ATLAS-MAP: An Automated Test Station for Gated Electronic Transport Measurements

The diversification of electronic materials in devices provides a strong incentive for methods to rapidly correlate device performance with fabrication decisions. In this work, we present a low-cost automated test station for gated electronic transport measurements of field-effect transistors. Utilizing open-source PyMeasure libraries for transparent instrument control, the “ATLAS-MAP” system serves as a customizable interface between sourcemeters and samples under test and is programmed to conduct transfer curve and van der Pauw methods with static and sweeping gate voltages. Zinc oxide transistors of variable thickness (5, 10, and 20 nm) and channel size (50 μm to 3 mm, of equal length and width) were fabricated to validate the design. Standardization of testing procedures and raw data formatting enabled automated data analysis. A detailed list of parts and code files for the system are provided.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Improvement of ion thruster design

Two types of measurements were performed on ion thrustors equipped with SmCo magnets in either ring cusp or line cusp arrangements. Langmuir probes were used to measure plasma potential, electron density, and electron temperture in all regions inside the thruster. Loss fluxes to various surfaces were determined by measuring the currents to foils attached to or imbedded in the surface. Data were obtained for several sets of discharge voltages and currents. The loss currents were determined from current vs voltage characteristics observed on a transistor curve tracer oscilloscope. Both ion and electron currents were measured to all parts of the walls and to all parts of the cathode assembly using collecting plates. These measurement were also made for various parameter sets. In line cusp configuration the plasma density is essentially as predicted by existing calculations. In the ring cusp arrangement the interior of the plasma contains an inhomogeneous and relatively large magnetic field so the geometry is decidely two-dimensional and the models of Self (1967) and of Kino and Sham (1966) do not agree.

Carpenter, R. T.↗
NASA NTRS1999

Germanium JFET for Cryogenic Readout Electronics

The n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).

Das, N. C.↗
DOE OSTI2024

Three dimensional vertically structured electronic devices

An apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate including a first semiconductor material, an array of three dimensional (3D) structures above the substrate, a sidewall heterojunction layer positioned on at least one vertical sidewall of each 3D structure, and an isolation region positioned between the 3D structures. Each 3D structure includes the first semiconductor material. The sidewall heterojunction layer includes a second semiconductor material, where the first and second semiconductor material have different bandgaps.

Conway, Adam↗
DOE OSTI2025

High-performance n-Type Polymers Based on Multiple Electron-withdrawing Groups Decorated ( E )-1,2-Di(thiophen-2-yl)ethene Building Blocks

The performance of n-type conjugated polymers lags far behind that of p-type polymers, which significantly restricts the development of organic electronics. The (E)-1,2-di(thiophen-2-yl)ethene (TVT) unit, owing to its unique advantages, has been widely applied in the design of p-type polymer semiconductors. Previous studies have demonstrated that introducing electron-withdrawing groups can lower the frontier orbital energy levels of polymers and enhance electron injection/transporting capabilities. Based on this, we proposed incorporating multiple electronwithdrawing groups, such as amide groups, fluorine atoms, and cyano groups, into the polymer backbones of TVT-based polymer to facilitate the electron transport. Here, we successfully designed and synthesized the polymers TVTDA-4FTVT and TVTDA-2F2CNTVT. Both polymers exhibited low frontier orbital energy levels. Due to its significantly higher crystallization tendency and favorable intermolecular packing structure, the organic field-effect transistor (OFET) device based on TVTDA-4FTVT demonstrated an electron mobility one order of magnitude higher than that of TVTDA-2F2CNTVT. TVTDA-4FTVT showed the highest electron mobility of 0.87 cm 2 ·V −1 ·s −1 , while TVTDA-2F2CNTVT exhibited the highest electron mobility of 0.049 cm 2 ·V −1 ·s −1 . Owing to its deeper lowest unoccupied molecular orbital (LUMO) level, the OFET devices based on TVTDA-2F2CNTVT showed good air stability after being placed in a natural environment for 15 d.

36 MATERIALS SCIENCE↗
NASA NTRS2000

Displacement Damage in Bipolar Linear Integrated Circuits

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

Rax, B. G.↗
DOE OSTI2023

Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors

Field-effect transistors (FETs) made from colloidal quantum dot (QD) solids commonly suffer from current–voltage hysteresis caused by the bias-stress effect (BSE), which complicates fundamental studies of charge transport in QD solids and the use of QD FETs in electronics. Here, we show that the BSE can be eliminated in n-channel PbSe QD FETs by first removing the QD ligands with a dose of H 2 S gas and then infilling the QD films with alumina by atomic layer deposition (ALD). The H 2 S-treated, alumina-infilled FETs have stable, hysteresis-free device characteristics (total short-term stability), indefinite air stability (total long-term stability), and a high electron mobility of up to 14 cm 2 V −1 s −1 , making them attractive for QD circuitry and optoelectronic devices. The BSE-free devices are utilized to conclusively establish the dependence of the electron mobility on temperature and QD diameter. We demonstrate that the BSE in these devices is caused by both electron trapping at the QD surface and proton drift within the film. The H 2 S/alumina chemistry produces ligand-free PbSe/PbS/Al 2 O 3 interfaces that lack the traps that cause the electronic part of the BSE, while full alumina infilling stops the proton motion responsible for the ionic part of the BSE. In conclusion, our matrix engineering approach should aid efforts to eliminate the BSE, boost carrier mobilities, and improve charge transport in other types of nanocrystal solids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field effect transistor. The influence of these groups on dielectric function, charge retention and threshold voltage shifts (ΔV th ) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV th ). Here, we created three types of devices: with the substituted PS layer as single layer dielectric, on top of a crosslinked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Particularly large bias stress effects and ΔV th , larger than the hexamethoxy and previously studied dimethoxy analogs, were observed in the second case and the effects increased with the increasing electron donating properties of the modified side chains. The highest ΔV th was consistent with a majority of the side chains stabilizing trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV th , respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Insights into negative differential resistance in MoS 2 Esaki diodes: A first-principles perspective

MoS 2 is a two-dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field-effect transistors. However, such a widely accepted concept has yet to be been supported by theoretical investigations based on first principles. In this paper, using density functional theory, in conjunction with nonequilibrium Green's function techniques and our electric field gating method, enabled by a large-scale computational approach, we study the relation between band alignment and transmission in planar and side-stack MoS 2 p–i–n junction configurations. Here, we demonstrate the presence of negative differential resistance for both in-plane and interlayer current, a staple characteristic of tunnel diode junctions, and analyze the physical origin of such an effect. Electrostatic potentials, the van der Waals barrier, and a complex band analysis are also examined for a thorough understanding of Esaki diodes.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

PEDOT:PSS for Flexible and Stretchable Electronics: Modifications, Strategies, and Applications

Abstract Substantial effort has been devoted to both scientific and technological developments of wearable, flexible, semitransparent, and sensing electronics (e.g., organic/perovskite photovoltaics, organic thin‐film transistors, and medical sensors) in the past decade. The key to realizing those functionalities is essentially the fabrication of conductive electrodes with desirable mechanical properties. Conductive polymers (CPs) of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) have emerged to be the most promising flexible electrode materials over rigid metallic oxides and play a critical role in these unprecedented devices as transparent electrodes, hole transport layers, interconnectors, electroactive layers, or motion‐sensing conductors. Here, the current status of research on PEDOT:PSS is summarized including various approaches to boosting the electrical conductivity and mechanical compliance and stability, directly linked to the underlying mechanism of the performance enhancements. Along with the basic principles, the most cutting edge‐progresses in devices with PEDOT:PSS are highlighted. Meanwhile, the advantages and plausible problems of the CPs and as‐fabricated devices are pointed out. Finally, new perspectives are given for CP modifications and device fabrications. This work stresses the importance of developing CP films and reveals their critical role in the evolution of these next‐generation devices featuring wearable, deformable, printable, ultrathin, and see‐through characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Review Article: Crystal alignment for high performance organic electronics devices

Organic electronics devices based on high-performance small-molecule organic semiconductors have gained substantial attention because of their unique advantages such as excellent charge transport, solution processability, and environmental stability. However, the intrinsic crystallization of small-molecule organic semiconductors is anisotropic, resulting in significant device performance variations of organic electronics devices. In this article, the authors review the various approaches and techniques developed to control and align the crystallization of some benchmark solution-processable, high-performance, small-molecule organic semiconductors, such as 6,13-bis(triisopropylsilylethynyl) pentacene, N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide, and 5,11-bis(triethylgermylethynyl)anthradithiophene. These alignment approaches are studied in the context of capillary force-based techniques, patterning-based techniques, solution-shearing-based techniques, and other miscellaneous techniques, including zone-casting, vertical flowing, air flow navigation, temperature gradient alignment, etc. The organic semiconductors and crystal alignment techniques reviewed in this article shed light on important relationship among crystallization, charge transport, and device performance and can be applied to various high-performance organic electronics devices, such as organic thin film transistors and solar cells.

42 ENGINEERING↗