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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Chemical trends of deep levels in van der Waals semiconductors

Abstract Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS 2 , WS 2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Practically Accessible All-Solid-State Batteries Enabled by Organosulfide Cathodes and Sulfide Electrolytes

The combination of organic electrode materials and sulfide electrolytes is expected to enable the development of all-solid-state organic batteries featuring high energy density and long-term sustainability. In this work, thiuram hexasulfide is reported as a low-cost and high-capacity organic cathode for solid-state batteries based on sulfide electrolytes, delivering a capacity of ~600 mAh g -1 and retaining 80.8 % capacity after 500 cycles. An electrochemically reversible change of the cathode interface was revealed upon cycling. Full cell displays an oscillating stress change up to 0.6 MPa during cycling, predominated by the anode side. The energy density is 1140 Wh kg -1 at the material level and 376 Wh kg -1 at the electrode level, which are among the best-reported organic cathodes to date. A high areal capacity of 10.4 mAh cm -2 is reached with a high mass loading cathode. A dry-film approach is further explored to manufacture sheet-type cells. Free-standing electrolyte film is merely ~48 μm thick and demonstrates an ultralow areal resistance of 3.9 Ω cm 2 , significantly boosts the cell-level energy density and reduces the cell internal resistance.

25 ENERGY STORAGE↗
NASA NTRS1974

Computational study of nonlinear plasma waves: 1: Simulation model and monochromatic wave propagation

An economical low noise plasma simulation model is applied to a series of problems associated with electrostatic wave propagation in a one-dimensional, collisionless, Maxwellian plasma, in the absence of magnetic field. The model is described and tested, first in the absence of an applied signal, and then with a small amplitude perturbation, to establish the low noise features and to verify the theoretical linear dispersion relation at wave energy levels as low as 0.000,001 of the plasma thermal energy. The method is then used to study propagation of an essentially monochromatic plane wave. Results on amplitude oscillation and nonlinear frequency shift are compared with available theories. The additional phenomena of sideband instability and satellite growth, stimulated by large amplitude wave propagation and the resulting particle trapping, are described.

Matda, Y.↗
NASA NTRS1981

Evaluation of integral exposure energy load on aural analyzer of miners

The individual exposure integral noise load on workers before the beginning of hearing impairment was determined for a group of 20 male miners who had worked with drilling equipment and harvesters for 8 to 20 years before the onset of the disability. Results show that the total exposure energy load of about 4 kw x h sq m, obtained by miners in the examined group, resulted in occupational injury to the auditory organ (cochlear neuritis) in 75% of the cases. The equivalent energy level of noise computed according to the date of total energy load is roughly 99 db A, which significantly exceeds the permissible amount of 85 db A. There is a correlation (r = 0.77) between the integral exposure energy noise on the aural analyzer in the degree of increase in the total threshold for the mean speech range.

Kornilov, A. N.↗
NASA NTRS1994

Electrical characterization of 6H crystalline silicon carbide

Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).

Lempner, Stephen E.↗
NASA NTRS2002

Modeling of Switching and Hysteresis in Molecular Transport

The conventional way of modeling current transport in two and three terminal molecular devices could be inadequate for certain cases involving switching and hysteresis. Here we present an alternate approach. Contrary to the regular way where applied bias directly modulates the conducting energy levels of the molecule, our method introduces a nonlinear potential energy surface varying with the applied bias as a control parameter. A time-dynamics is also introduced properly accounting for switching and hysteresis behavior. Although the model is phenomenological at this stage, we believe any detailed model would contain similar descriptions at its core.

Samanta, Manoj P.↗
NASA NTRS2017

Dissociation and Internal Excitation of Molecular Nitrogen Due to N + N2 Collisions Using Direct Molecular Simulation

In this work we present a molecular level study of N2+N collisions, focusing on excitation of internal energy modes and non-equilibrium dissociation. The computation technique used here is the direct molecular simulation (DMS) method and the molecular interactions have been modeled using an ab−initio potential energy surface (PES) developed at NASA's Ames Research Center. We carried out vibrational excitation calculations between 5000K and 30000K and found that the characteristic vibrational excitation time for the N + N2 process was an order of magnitude lower than that predicted by the Millikan and White correlation. It is observed that during vibrational excitation the high energy tail of the vibrational energy distribution gets over populated first and the lower energy levels get populated as the system evolves. It is found that the non-equilibrium dissociation rate coefficients for the N + N2 process are larger than those for the N2 + N2 process. This is attributed to the non-equilibrium vibrational energy distributions for the N + N2 process being less depleted than that for the N2 +N2 process. For an isothermal simulation we find that the probability of dissociation goes as 1/T(sub tr) for molecules with internal energy (epsilon(sub int)) less than approximately 9.9eV, while for molecules with epsilon (sub int) greater than 9.9eV the dissociation probability was weakly dependent on translational temperature of the system. We compared non-equilibrium dissociation rate coefficients and characteristic vibrational excitation times obtained by using the ab-initio PES developed at NASA's Ames Research Center to those obtained by using an ab-initio PES developed at the University of Minnesota. Good agreement was found between the macroscopic properties and molecular level description of the system obtained by using the two PESs.

Grover, Maninder S.↗
NASA NTRS2003

Atomic Data and Spectral Line Intensities for S XI

Electron impact collision strengths, energy levels, oscillator strengths and spontaneous radiative decay rates are calculated for S XI. The configurations included are 2s(sup 2)2psup 2), 2s2p(sup 3), 2p(sup 4), 2s(sup 2)2p3l and 2s(sup 2)2p4l (I = s , p , d) giving rise to 72 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies, 32, 60, 90, 120, and 150 Ry. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates, statistical equilibrium equations for level populations are solved: The effects of resonances, proton rates, photoexcitation and cascades on level populations have been investigate. The predicted S XI line intensities are compared with EUV and UV observations of the quiet and active Sun.

Landi, E.↗
NASA NTRS2004

Atomic Data and Spectral Line Intensities for Ne III

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ne III. The configurations used are 2s(sup 2)2p(sup 4), 2s2p(sup 5), 2p(sup 6), 2s(sup 2)2p(sup 3)3(sub s), 2s(sup 2)2p(sup 3)3p, and 2s(sup 2)2p(sup 3)3d giving rise to 86 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies, 5.2, 10, 15, 20 and 25 Ry. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10(exp 8) - 10(exp 14)/cc at an electron temperature of logTe/K = 5.0, corresponding to maximum abundance of Ne III. Relative spectral line intensities are calculated.

Landi, E.↗
NASA NTRS2004

Atomic Data and Spectral Line Intensities for Ar XII

Electron impact collision strengths; energy levels; oscillator strengths and spontaneous radiative decay rates are calculated for Ar XII. The configurations used are 2s(exp 2)2p(exp 3), 2s2p(exp4), 2p(exp 5), 2s22p23s, 2s(exp 2)2p(exp 2)3p, and 2s(exp 2)2p(exp 2)3d giving rise to 72 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies: 35,70, 105, 140 and 175 Ry. They are complemented by Coulomb-Born limits towards infinite collision energy for forbidden transitions and line strengths for optically allowed transitions. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10(exp 8)-101(exp 14) cm(exp -3) at an electron temperature of log T(sub e)/K = 6.4, corresponding to maximum abundance of Ar XII. Relative spectral line intensities are calculated.

Eissner, W.↗
NASA NTRS2004

Atomic Data and Spectral Line Intensities for Ar XII

Electron impact collision strengths, energy levels, oscillator strengths and spontaneous radiative decay rates are calculated for Ar XII. The configurations used are 2s(sup 2)p(sup 3), 2s(sup 2)p(sup 4), 2p(sup 5), 2s(sup 2)2p(sup 2)3s, 2s(sup 2)2p(sup 2)3p, and 2s(sup 2)2p(sup 2)3d giving rise to 72 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies: 35, 70, 105, 140 and 175 Ry. They are complemented by Coulomb-Born limits towards infinite collision energy for forbidden transitions and line strengths for optically allowed transitions. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10(exp 8)-10(exp 14)/cm(exp 3) at an electron temperature of log T(sub e)/K = 6.4, corresponding to maximum abundance of AR-XII. Relative spectral line intensities are calculated.

Eissner, W.↗
NASA NTRS2001

Atomic Data and Spectral Line Intensities for Ne III

Electron impact collision strengths, energy levels, oscillator strengths and spontaneous radiative decay rates are calculated for Ne III. The configurations used are 2s(sup 2) 2p(sup 4),2s2p(sup 5),2s(sup 2) 2p(sup 3)3s, and 2s(sup 2)3p(sup 3)3d giving rise to 57 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies, 5, 10, 15, 20, and 25 Ry. Excitation rate coefficients are calculated by assuming a Maxwellian electron velocity distribution at an electron temperature of logT,(K)=5.0, corresponding to maximum abundance of Ne III. Using the excitation rate coefficients and the radiative transition rates, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10(exp 8)-10(exp 14) per cubic centimeter. Relative spectral line intensities are calculated. Proton excitation rates between the lowest three levels have been included in the statistical equilibrium equations. The predicted Ne III line intensities are compared with SERTS rocket measurements of a solar active region and of a laboratory EUV light source.

Bhatia, A. K.↗
NASA NTRS2001

Atomic Data and Spectral Line Intensities for Ni XXI

Electron impact collision strengths, energy levels, oscillator strengths and spontaneous radiative decay rates are calculated for Ni XXI. The configurations used are 2s(sup 2)2p(sup 4), 2s2p(sup 5), 2p(sup 6), 2s(sup 2)2p(sup 3)3s, and 2s(sup 2)3p(sup 3)3d giving rise to 58 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies, 85, 170, 255, 340, and 425 Ry. Excitation rate coefficients are calculated by assuming a Maxwellian electron velocity distribution at an electron temperature of log T(sub e)(K)=6.9, corresponding to maximum abundance of Ni XXI. Using the excitation rate coefficients and the radiative transition rates, statistical equilibrium equations for level populations are solved at electron densities 10(exp 8)-10(exp 14) per cubic centimeter. Relative spectral line intensities are calculated. Proton excitation rates between the lowest three levels have been included in the statistical equilibrium equations. The predicted intensity ratios are compared with available observations.

Bhatia, A. K.↗
DOE OSTI2020

Comparative PV LCOE Calculator (Comparative Photovoltaic Levelized Cost of Energy Calculator) [SWR-20-86]

The calculator calculates levelized cost of energy (LCOE) for photovoltaic (PV) systems based on cost, performance, and reliability inputs for a baseline and a proposed technology. The user can choose inputs and watch the effect on LCOE to determine whether a proposed technology is cost-effective, perform trade-off analysis among different technology options, and do break-even analysis of cost or performance.

Silverman, Timothy↗
DOE OSTI2025

Emerging tension between isospin symmetry and nuclear deformation at 𝐴 = 78

Since the nuclear interaction is, to first order, isospin independent, simple relationships can be derived for 𝐸⁢2 strengths across isobaric analog states within an isobaric triplet. At the same time, there is a well-known relationship between the 2 + excitation energy and the 𝐵(𝐸⁢2;2 + → 0 + ) transition strength in deformed even-even nuclei. Here, we highlight a tension between these two trends in the 𝐴 = 78 isobaric triplet. Recent level-energy determinations indicate that the proton-rich member of the triplet, 78 Zr, is strongly deformed while recent lifetime measurements in 78 Sr and 78 Y, as extrapolated into 78 Zr, would imply that 78 Zr is weakly deformed. Furthermore, we explore the implications of this apparent contradiction and explore potential solutions.

59 ≤ A ≤ 89↗
DOE OSTI2022

Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets

Quantifying charge-state transition energy levels of impurities in semiconductors is critical to understanding and engineering their optoelectronic properties for applications ranging from solar photovoltaics to infrared lasers. While these transition levels can be measured and calculated accurately, such efforts are time-consuming and more rapid prediction methods would be beneficial. Here, we significantly reduce the time typically required to predict impurity transition levels using multi-fidelity datasets and a machine learning approach employing features based on elemental properties and impurity positions. We use transition levels obtained from low-fidelity (i.e., local-density approximation or generalized gradient approximation) density functional theory (DFT) calculations, corrected using a recently proposed modified band alignment scheme, which well-approximates transition levels from high-fidelity DFT (i.e., hybrid HSE06). Further, the model fit to the large multi-fidelity database shows improved accuracy compared to the models trained on the more limited high-fidelity values. Crucially, in our approach, when using the multi-fidelity data, high-fidelity values are not required for model training, significantly reducing the computational cost required for training the model. Our machine learning model of transition levels has a root mean squared (mean absolute) error of 0.36 (0.27) eV vs high-fidelity hybrid functional values when averaged over 14 semiconductor systems from the II–VI and III–V families. As a guide for use on other systems, we assessed the model on simulated data to show the expected accuracy level as a function of bandgap for new materials of interest. Finally, we use the model to predict a complete space of impurity charge-state transition levels in all zinc blende III–V and II–VI systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Interfacial Engineering Using Covalent Organic Frameworks in Polymer Composites for High‐Temperature Electrostatic Energy Storage

Abstract The use of inorganic nanofillers has been an effective method to improve high‐temperature capacitive performance of dielectric polymers, though there are unmet challenges such as undesirable organic–inorganic compatibility, and low efficiencies and energy densities. Herein, a surface functionalization strategy using covalent organic frameworks (COFs) is employed to address such challenges in realizing high‐performing polymer composites. Specifically, core–shell structured nanoparticles, where ZrO 2 nanoparticles act as the core and a COF material forms the shell, are constructed and composited with the polyetherimide (PEI) matrix. The design leverages the high electron affinity ( E A ) of the outer COF shell to create energy traps, thereby capturing free charges and limiting electrical conduction. Concurrently, the low E A and wide bandgap of the ZrO 2 core introduce energy barriers to impede charge injection and migration. This orchestrated “energy level cascade” results in a marked reduction of leakage current and energy loss. The resulting polymer composite showcases an impressive discharged energy density of 6.21 J cm −3 at an efficiency above 90%, with a maximum discharged energy density reaching 7.43 J cm −3 at 150 °C. These performance metrics position the PEI/ZrO 2 @COF polymer composite to surpass or be on par with state‐of‐the‐art high‐temperature PEI composites and other advanced polymer dielectrics.

Xie, Zongliang↗
DOE OSTI2022

Correlating Electronic Structure and Device Physics with Mixing Region Morphology in High-Efficiency Organic Solar Cells

The donor/acceptor interaction in non-fullerene organic photovoltaics leads to the mixing domain that dictates the morphology and electronic structure of the blended thin film. Initiative effort is paid to understand how these domain properties affect the device performances on high-efficiency PM6:Y6 blends. Different fullerenes acceptors are used to manipulate the feature of mixing domain. It is seen that a tight packing in the mixing region is critical, which could effectively enhance the hole transfer and lead to the enlarged and narrow electron density of state (DOS). As a result, short-circuit current (J SC ) and fill factor (FF) are improved. The distribution of DOS and energy levels strongly influences open-circuit voltage (V OC ). The raised filling state of electron Fermi level is seen to be key in determining device V OC . Energy disorder is found to be a key factor to energy loss, which is highly correlated with the intermolecular distance in the mixing region. A 17.53% efficiency is obtained for optimized ternary devices, which is the highest value for similar systems. The current results indicate that a delicate optimization of the mixing domain property is an effective route to improve the V OC , J SC , and FF simultaneously, which provides new guidelines for morphology control toward high-performance organic solar cells.

36 MATERIALS SCIENCE↗