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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Study of the triton-burnup process in different JET scenarios using neutron monitor based on CVD diamond

We present the results of analysis of triton burn-up process using the data from diamond detector. Neutron monitor based on CVD diamond was installed in JET torus hall close to the plasma center. We measure the part of 14 MeV neutrons in scenarios where plasma current varies in a range of 1-3 MA. In this experiment diamond neutron monitor was also able to detect strong gamma bursts produced by runaway electrons arising during the disruptions. We can conclude that CVD diamond detector will contribute to the study of fast particles confinement and help predict the disruption events in future tokamaks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Phonon- and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison

Diamond and cBN are two of the most promising ultra-wide bandgap semiconductors for applications in high-power high-frequency electronic devices. Despite extensive studies on carrier transport in these materials, there are large discrepancies in their reported carrier mobilities. In this work, we investigate the phonon- and dopant-limited electron and hole mobilities of cBN and diamond with atomistic first-principles calculations in order to understand their fundamental upper bounds to carrier transport. Our results show that although the phonon-limited electron mobilities are comparable between cBN and diamond, the hole mobility is significantly lower in cBN due to its heavier hole effective mass. Moreover, although lattice scattering dominates the mobility at low doping, neutral impurity scattering becomes the dominant scattering mechanism at higher dopant concentrations due to the high dopant ionization energies. Our analysis provides critical insights and reveals the intrinsic upper limits to the carrier mobilities of diamond and cBN as a function of doping and temperature for applications in high-power electronic devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2012

Increasing the output power of single 808-nm laser diodes using diamond submounts produced by microwave plasma chemical vapour deposition

We have designed and fabricated submounts from synthetic diamond grown by microwave plasma chemical vapour deposition and developed an economical process for metallising such submounts. Laser diode chips having an 808-nm emission wavelength, 3-mm-long cavity and 130-mm-wide stripe contact were mounted on copper heat sinks with the use of diamond submounts differing in quality. The devices were tested for more than 150 h in continuous mode at an output power of 8 W on diamond with a thermal conductivity of 700 W m{sup -1} K{sup -1}, and no changes in their output power were detected. On diamond with a thermal conductivity of 1600 W m{sup -1} K{sup -1}, stable cw operation for 24 h at an output power of 12 W was demonstrated. (letters)

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Propagation and absorption of high-intensity femtosecond laser radiation in diamond

Femtosecond interferometry has been used to experimentally study the photoexcitation of the electron subsystem of diamond exposed to femtosecond laser pulses of intensity 10{sup 11} to 10{sup 14} W cm{sup -2}. The carrier concentration has been determined as a function of incident intensity for three harmonics of a Ti : sapphire laser (800, 400 and 266 nm). The results demonstrate that, in a wide range of laser fluences (up to those resulting in surface and bulk graphitisation), a well-defined multiphoton absorption prevails. We have estimated nonlinear absorption coefficients for pulsed radiation at λ = 800 nm (four-photon transition) and at 400 and 266 nm (indirect and direct two-photon transitions, respectively). It has also been shown that, at any considerable path length of a femtosecond pulse in diamond (tens of microns or longer), the laser beam experiences a severe nonlinear transformation, determining the amount of energy absorbed by the lattice, which is important for the development of technology for diamond photostructuring by ultrashort pulses. The competition between wave packet self-focusing and the plasma defocusing effect is examined as a major mechanism governing the propagation of intense laser pulses in diamond. (interaction of laser radiation with matter. laser plasma)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Effect of absorbing coating on ablation of diamond by IR laser pulses

We study the possibility of increasing the efficiency and quality of laser ablation microprocessing of diamond by preliminary forming an absorbing layer on its surface. The laser pulses having a duration of 1 ps and 10 ns at a wavelength of 1030 nm irradiate the polycrystalline diamond surface coated by a thin layer of titanium or graphite. We analyse the dynamics of the growth of the crater depth as a function of the number of pulses and the change in optical transmission of the ablated surface. It is found that under irradiation by picosecond pulses the preliminary graphitisation allows one to avoid the laser-induced damage of the internal diamond volume until the appearance of a self-maintained graphitised layer. The absorbing coating (both graphite and titanium) much stronger affects ablation by nanosecond pulses, since it reduces the ablation threshold by more than an order of magnitude and allows full elimination of a laser-induced damage of deep regions of diamond and uncontrolled explosive ablation in the near-surface layer. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Antireflection coating of diamond elements of power optics for CO{sub 2} lasers

A technology of deposition of a single-layer PbF{sub 2} coating, antireflecting for the CO{sub 2} laser radiation, on diamond substrates is developed. As substrates, use is made of plates of polycrystalline CVD diamond. The transmission coefficient of diamond plates with two-side coating attains 98.5 % – 99 %. The measured laser-induced damage threshold of such plates under normal environment conditions for the pulsed (τ ∼ 100 ns) and continuous-wave radiation of CO{sub 2} lasers amounts to 250 and 4 MW cm{sup –2}, respectively. These values are comparable with the thresholds of the diamond substrate damage. The increase in the damage threshold of the AR coating under continuous-wave irradiation to 5.5 MW cm{sup –2} is found in the case of preliminary multiple irradiation of samples by weaker laser pulses. This effect can be explained by the pollutant removal from the surface of the film without its damage (laser cleaning effect). The bibliography includes 28 references. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Metallization of diamond

Experimental discovery of ultralarge elastic deformation in nanoscale diamond and machine learning of its electronic and phonon structures have created opportunities to address new scientific questions. Can diamond, with an ultrawide bandgap of 5.6 eV, be completely metallized, solely under mechanical strain without phonon instability, so that its electronic bandgap fully vanishes? Through first-principles calculations, finite-element simulations validated by experiments, and neural network learning, we show here that metallization/demetallization as well as indirect-to-direct bandgap transitions can be achieved reversibly in diamond below threshold strain levels for phonon instability. We identify the pathway to metallization within six-dimensional strain space for different sample geometries. We also explore phonon-instability conditions that promote phase transition to graphite. These findings offer opportunities for tailoring properties of diamond via strain engineering for electronic, photonic, and quantum applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High performance ionic-liquid-gated air doped diamond field-effect transistors

Here we report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ~200 cm 2 V –1 s –1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ~1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from –3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies

The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.

CVD↗
DOE OSTI2026

Defect in diamond with millisecond-scale spin relaxation time at room temperature

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times (T1) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms [1], and substitutional nitrogen (“P1 centers”) in diamond, which exhibit a T1 of 2 ms [2]. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond [3] with pulsed electron spin resonance. The observed T1 is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time (T2) is 246(7) µs, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Finally, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Engineering diamond interfaces free of dark spins

Nitrogen-vacancy (NV) centers in diamond are utilized extensively as quantum sensors for imaging fields at the nanoscale. The ultrahigh sensitivity of NV magnetometers has enabled the detection and spectroscopy of individual electron spins, with potentially far-reaching applications in condensed matter physics, spintronics, and molecular biology. However, the surfaces of these diamond sensors naturally contain electron spins, which create a background signal that can be hard to differentiate from the signal of the target spins. In this study, we develop a surface modification approach that eliminates the unwanted signal of these so-called dark electron spins. Our surface passivation technique, based on coating diamond surfaces with a thin titanium oxide (Ti⁢O 2 ) layer, reduces the dark spin density. The observed reduction in dark spin density aligns with our findings on the electronic structure of the diamond-Ti⁢O 2 interface. The reduction, from a typical value of 2000 μm −2 to a value below that set by the detection limit of our NV sensors (200 μm −2 ), results in a twofold increase in Hahn-echo coherence time of near surface NV centers. Furthermore, we derive a comprehensive spin model that connects dark spin relaxation with NV coherence, providing additional insights into the mechanisms behind the observed spin dynamics. Our findings are directly transferable to other quantum platforms, including nanoscale solid-state qubits and superconducting qubits.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

High Bragg reflectivity of diamond crystals exposed to multi-kW mm –2 X-ray beams

X-ray free-electron lasers in the oscillator configuration (XFELO) are future fully coherent hard X-rays sources with ultrahigh spectral purity. X-ray beams circulate in an XFELO optical cavity comprising diamond single crystals. They function as high-reflectance (close to 100%), narrowband (~10 meV) Bragg backscattering mirrors. The average power density of the X-ray beams in the XFELO cavity is predicted to be as high as ~10 kW mm –2 . Therefore, XFELO feasibility relies on the ability of diamond crystals to withstand such a high radiation load and preserve their high reflectivity. Here the endurance of diamond crystals to irradiation with multi-kW mm –2 power density X-ray beams is studied. It is shown that the high Bragg reflectivity of the diamond crystals is preserved after the irradiation, provided it is performed at ~1 × 10 –8 Torr high-vacuum conditions. In conclusion, irradiation under 4 × 10 –6 Torr results in a ~1 meV shift of the Bragg peak, which corresponds to a relative lattice distortion of 4 × 10 –8 , while the high Bragg reflectivity stays intact.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Small Bragg-plane slope errors revealed in synthetic diamond crystals

Wavefront-preserving X-ray diamond crystal optics are essential for numerous applications in X-ray science. Perfect crystals with flat Bragg planes are a prerequisite for wavefront preservation in Bragg diffraction. However, this condition is difficult to realize in practice because of inevitable crystal imperfections. Here, X-ray rocking curve imaging is used to study the smallest achievable Bragg-plane slope errors in the best presently available synthetic diamond crystals and how they compare with those of perfect silicon crystals. It is shown that the smallest specific slope errors in the best diamond crystals are about 0.08 (3) µrad mm -2 . These errors are only 50% larger than the 0.05 (2) µrad mm -2 specific slope errors measured in perfect silicon crystals. High-temperature annealing at 1450°C of almost flawless diamond crystals reduces the slope errors very close to those of silicon. Further investigations are in progress to establish the wavefront-preservation properties of these crystals.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Diamond channel-cut crystals for high-heat-load beam-multiplexing narrow-band X-ray monochromators

Next-generation high-brilliance X-ray photon sources call for new X-ray optics. Here we demonstrate the possibility of using monolithic diamond channel-cut crystals as high-heat-load beam-multiplexing narrow-band mechanically stable X-ray monochromators with high-power X-ray beams at cutting-edge high-repetition-rate X-ray free-electron laser (XFEL) facilities. The diamond channel-cut crystals fabricated and characterized in these studies are designed as two-bounce Bragg reflection monochromators directing 14.4 or 12.4 keV X-rays within a 15 meV bandwidth to 57 Fe or 45 Sc nuclear resonant scattering experiments, respectively. The crystal design allows out-of-band X-rays transmitted with minimal losses to alternative simultaneous experiments. Only ≲2% of the incident ∼100 W X-ray beam is absorbed in the 50 µm-thick first diamond crystal reflector, ensuring that the monochromator crystal is highly stable. Other X-ray optics applications of diamond channel-cut crystals are anticipated.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Polished diamond X-ray lenses

High-quality bi-concave 2D focusing diamond X-ray lenses of apex-radius R = 100 µm produced via laser-ablation and improved via mechanical polishing are presented here. Both for polished and unpolished individual lenses and for stacks of ten lenses, the remaining figure errors determined using X-ray speckle tracking are shown and these results are compared with those of commercial R = 50 µm beryllium lenses that have similar focusing strength and physical aperture. For two stacks of ten diamond lenses (polished and unpolished) and a stack of eleven beryllium lenses, this paper presents measured 2D beam profiles out of focus and wire scans to obtain the beam size in the focal plane. These results are complemented with small-angle X-ray scattering (SAXS) measurements of a polished and an unpolished diamond lens. Again, this is compared with the SAXS of a beryllium lens. The polished X-ray lenses show similar figure errors to commercially available beryllium lenses. While the beam size in the focal plane is comparable to that of the beryllium lenses, the SAXS signal of the polished diamond lenses is considerably lower.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Plasma-free hydrogenation of oxygen-terminated polycrystalline diamond as determined by circular transmission line measurements (CTLM)

Here, we developed a process to fully hydrogen-terminate diamond by annealing in forming gas. The surface was characterized using circular transmission line measurements (CTLMs) to evaluate the onset and degree of hydrogen termination. No hydrogenation occurred at temperatures at or below 500 °C. Hydrogenation occurs after annealing for 5 min at temperatures between 600 and 1000 °C, with complete hydrogenation achieved at 1000 °C, which showed the same sheet resistance as diamond terminated in a hydrogen plasma. Annealing at temperatures lower than 1000 °C resulted in only partial hydrogenation but can be compensated by increasing the anneal time. At temperatures exceeding 1100 °C, the sheet resistance suddenly and drastically increases, indicating instability of a hydrogen-terminated diamond surface at elevated temperatures under forming gas. The activation energy was determined to be 1.20eV. SEM inspection showed that annealing in hydrogen produced significantly reduced surface roughness compared to diamond surfaces hydrogenated in a H 2 plasma.

36 MATERIALS SCIENCE↗