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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Particle resonances in toroidal fusion devices

Resonances of high energy particles in magnetic confinement devices due to electromagnetic instabilities can strongly modify the distribution, leading to a reduction in fusion power and even discharge termination and particle loss to the device walls through avalanche. The existence of a mode particle resonance depends on properties of the equilibrium, particle trajectories, and perturbation mode harmonic content. Resonance location is a function of particle energy and equilibrium field line helicity. Different methods for finding resonance location and energy dependence are developed. The properties of resonances are discussed using examples from magnetic fusion devices. Here, we show that if mode resonances exist at low particle energy, they very likely also exist at high energy, thus modifying high energy beam particles and fusion products. It is possible for a resonance to appear due to mode induced orbit helicity modification when it is forbidden at low mode amplitude.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Phase-resolved electrical detection of coherently coupled magnonic devices

We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/Permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n=1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py- or YIG-dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Perspective: Reproducible Coherence Characterization of Superconducting Quantum Devices

As the field of superconducting quantum computing approaches maturity, optimization of single-device performance is proving to be a promising avenue towards large-scale quantum computers. However, this optimization is possible only if performance metrics can be accurately compared among measurements, devices, and laboratories. Currently such comparisons are inaccurate or impossible due to understudied errors from a plethora of sources. In this Perspective, we outline the current state of error analysis for qubits and resonators in superconducting quantum circuits, and discuss what future investigations are required before superconducting quantum device optimization can be realized.

McRae, Corey H.↗
DOE OSTI2022

Origin of layered perovskite device efficiencies revealed by multidimensional time-of-flight spectroscopy

Mixtures of layered perovskite quantum wells with different sizes form prototypical light-harvesting antenna structures in solution-processed films. Gradients in the bandgaps and energy levels are established by concentrating the smallest and largest quantum wells near opposing electrodes in photovoltaic devices. Whereas short-range energy and charge carrier funneling behaviors have been observed in layered perovskites, our recent work suggests that such light-harvesting processes do not assist long-range charge transport due to carrier trapping at interfaces between quantum wells and interstitial organic spacer molecules. Here, we apply a two-pulse time-of-flight technique to a family of layered perovskite systems to explore the effects that interstitial organic molecules have on charge carrier dynamics. In these experiments, the first laser pulse initiates carrier drift within the active layer of a photovoltaic device, whereas the second pulse probes the transient concentrations of photoexcited carriers as they approach the electrodes. The instantaneous drift velocities determined with this method suggest that the rates of trap-induced carrier deceleration increase with the concentrations of organic spacer cations. Overall, our experimental results and model calculations suggest that the layered perovskite device efficiencies primarily reflect the dynamics of carrier trapping at interfaces between quantum wells and interstitial organic phases.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrate, and boron-implanted type Ib and IIa substrates. Using these samples, we fabricated and characterized planar interdigitated photoconductive switches with 30 μm, electrode gaps. 532 and 1064 nm Nd:YAG laser pulses with energies up to 3.5 mJ/pulse were used to trigger the switches. Photoresponses were measured at bias voltages ranging from 10 to 100 V, corresponding to electric fields of 3.3–33 kV/cm. In this field range, the type Ib device exhibited the highest average on/off-state current ratio, on the order of 10 11 , when triggered with 0.8 mJ/pulse, 532 nm laser pulses. However, only the CVD grown boron-doped epilayer and boron implanted IIa devices showed decent sensitivity to 1064 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm 2 charge in Al 1-x B x N via electron microscopy, Al 1-x B x N ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn 1-x Mg x O. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

Physics↗
DOE OSTI2021

Impact of direct exchange coupling via the insulator on the magnetic tunnel junction based molecular spintronics devices with competing molecule induced inter-electrode coupling

The magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) approach is suitable for mass production. This approach provides solutions to fabrication difficulties related to reliably connecting molecular device elements to the ferromagnets (FMs). To producing MTJMSD, the molecular channels are bridged across the insulator of an MTJ testbed with exposed side edges. In an MTJMSD, two FMs are simultaneously connected by an insulator film and the molecular channels along the exposed sides. In our prior experimental studies, we observed that molecules could produce strong coupling between ferromagnets in the presence of the competing coupling via an insulator. In this paper, our Monte Carlo Simulation (MCS) was used to study the impact of coupling variation via insulator (a.k.a. Ji) on the magnetic properties of an MTJMSD. We studied the effect of Ji while varying the molecule induced antiferromagnetic exchange coupling. The ferromagnetic or antiferromagnetic nature and magnitude of Ji determined the resultant effect. Antiferromagnetic Ji enhanced the pre-existing antiferromagnetic molecular coupling effect. Ferromagnetic Ji competed with the opposite nature of antiferromagnetic molecular coupling. Our MCS may help to understand the impact of insulator thickness and defects on the molecular spintronics device performance and design process.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermal scanning probe and laser lithography for patterning nanowire based quantum devices

Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin–orbit coupling and g-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fascinating physics at the edge of magnetic fusion devices

Abstract The physics of the processes at the edge of magnetic fusion devices is multifaceted and exhibits complex, nonlinear synergistic effects. Even though this region occupies only a small portion of the whole device, it plays a crucial role in overall plasma confinement, heat exhaust, and plasma–wall interactions. The latter affects not only the performance but also the lifetime of plasma-facing components and therefore remains an outstanding challenge for future fusion reactors. At the edge of fusion devices, researchers are dealing with phenomena including classical and anomalous plasma transport, atomic physics effects, and physics of plasma-facing material under strong irradiation by particle and energy fluxes. The diversity of edge physics makes it particularly attractive for young scientists. Working in this field, they can find endless possibilities to demonstrate their talents and creativity. This short review describes just some of the basic scrape-off layer and divertor plasma phenomena including divertor plasma detachment, intermittent bursts of anomalous cross-field plasma transport, plasma–material interactions, and dust in fusion plasmas, which are of particular interest in relation to fusion reactors.

Physics↗
DOE OSTI2025

Multi-device analysis of energy loss duration and pellet penetration with implications for shattered pellet injection in ITER

A robust disruption mitigation system (DMS) requires accurate characterization of key disruption timescales, one of the most notable being the thermal quench (TQ). Recent modeling of shattered pellet injection (SPI) into ITER plasmas, using JOREK and INDEX, suggests long TQ durations (6–10 ms) and slow cold front propagation due to the large plasma size. If validated, these predictions would have an impact on the desired pellet parameters and mitigation strategies for the ITER DMS. To resolve these questions, a database of SPI experiments from several small-to-large sized devices (J-TEXT, KSTAR, AUG, DIII-D, and JET) has been compiled under the auspices of the International Tokamak Physics Activity MHD, disruptions, and control topical group. Analysis of the energy loss duration (proxy for the TQ duration) with machine size is presented for both mixed neon/deuterium (Ne/D) SPI and pure deuterium (D) SPI. Several metrics for the energy loss onset (e.g. soft x-ray signal drop, I p dip, and radiation flash) were considered as the conventional metric, electron cyclotron emission, is often cut-off during SPI. Several scalings with different onset metrics showed an increase in energy loss duration with machine size. The energy loss duration was additionally shown to be a function of the ratio between the number of SPI neon atoms injected and the stored energy. Analysis of the pellet shard position relative to the cold front found that in larger devices, pellets are typically found inboard of the q = 2 surface at the energy loss onset. Lastly, the delay between the pellet shards hitting the q = 2 surface and the energy loss onset was additionally found to increase with machine size. This suggests that the pellet shards in large devices will penetrate faster and further than the cooling front.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A novel two-layer-integrated microfluidic device for high-throughput yeast proteomic dynamics analysis at the single-cell level

Abstract Current microfluidic methods for studying multicell strains (e.g., m-types) with multienvironments (e.g., n-types) require large numbers of inlets/outlets (m*n), a complicated procedure or expensive machinery. Here, we developed a novel two-layer-integrated method to combine different PDMS microchannel layers with different functions into one chip by a PDMS through-hole array, which improved the design of a PDMS-based microfluidic system. Using this method, we succeeded in converting 2 × m × n inlets/outlets into m + n inlets/outlets and reduced the time cost of loading processing (from m × n to m) of the device for studying multicell strains (e.g., m-types) in varied multitemporal environments (i.e., n-types). Using this device, the dynamic behavior of the cell-stress-response proteins was studied when the glucose concentration decreased from 2% to a series of lower concentrations. Our device could also be widely used in high-throughput studies of various stress responses, and the new concept of a multilayer-integrated fabrication method could greatly improve the design of PDMS-based microfluidic systems.

Chen, Kaiyue↗
DOE OSTI2026

Coupling of Klein-Andreev resonant states in B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 -graphene-B⁢i 2⁢ S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 devices

Quantum devices require coherent coupling over macroscopic distances. Recently, resonances due to Klein tunneling and Andreev reflection states (KARS) have been observed in a naturally occurring p-n junction at the interface between B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 (BSCCO), a high−⁢𝑇 c superconductor (HTS), and graphene. The resonances appear as conductance oscillations with gating. Here, in this study, we show coupling between the KARS in BSCCO-graphene-BSCCO devices of varying separation (L). The coupling is evidenced by a power-law decay of resonance period as L increases from tens of nanometers to microns. These results demonstrate the long-distance coupling of KARS cavities in graphene-HTS junctions. The length dependence seen in experiments is supported by single-particle spectral functions which show KARS are coupled by transport modes in graphene. The strong coupling between KARS in BSCCO-graphene-BSCCO devices showcases the possibility of HTS-graphene junctions for quantum circuits and unconventional Josephson junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dynamic attenuation scheme in measurement-device-independent quantum key distribution over turbulent channels

Measurement-device-independent quantum key distribution (MDI QKD) offers great security in practice because it removes all detector side channels. However, conducting MDI QKD over free-space channels is challenging. One of the largest culprits is the mismatched transmittance of the two independent turbulent channels causing a reduced Hong-Ou-Mandel visibility and thus a lower secret key rate. Here we introduce a dynamic attenuation scheme, where the transmittance of each of the two channels is monitored in real time by transmitting bright light pulses from each users to the measurement device. Based on the measured channel transmittance, a suitable amount of attenuation is introduced to the low-loss channel at the measurement device. Our simulation results show a significant improvement of QKD performance, especially when using short raw keys.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Quantifying Large Lattice Relaxations in Photovoltaic Devices

Temporal variations of Cu(In,Ga)Se 2 photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h are analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type doping increased with charge injection and decreased with temperature at low injection conditions. Furthermore, lattice relaxation can account for both trends and activation energies extracted from the data are approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type doping with greater stability. First-principles calculations providing revised activation energies for the (V Se -V Cu ) complex suggest that this defect does not account for the metastability observed here.

14 SOLAR ENERGY↗
DOE OSTI2023

Leakage Reduces Device Coherence Demands for Pulse-Level Molecular Simulations

Quantum simulation on noisy intermediate-scale quantum devices is severely limited by short qubit coherence times. A variational pulse-shaping algorithm known as ctrl-VQE was recently proposed to address this issue by eliminating the need for parameterized quantum circuits, which lead to long state preparation times. Here, in this study, we find the fastest possible pulses that prepare target molecular wave functions for a given device Hamiltonian describing coupled transmon qubits using simulations. We find that the resulting time-optimal pulses develop a bang-bang form consistent with Pontryagin’s maximum principle. We further investigate how the minimal state preparation time is impacted by the number of energy levels active in the transmon simulations. We find that leakage outside the computational subspace (something that is usually considered problematic) speeds up the state preparation, further reducing device coherence-time demands. Our analysis reveals that this speedup is due to both an enlarged solution space of target wave functions and the appearance of additional channels connecting initial and target states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Infrared Light-Emitting Devices from Antenna-Coupled Luttinger Liquid Plasmons In Carbon Nanotubes

Electrically driven light-emitting devices provide highly energy-efficient lighting at visible wavelengths, and they have transformed photonic and electronic lighting applications. Efficient infrared light-emitting devices, however, have been challenging because band gap emission from semiconductors becomes inefficient in the mid-infrared to far-infrared spectral range. Here, in this paper, we investigate infrared light-emitting devices (IRLEDs) based on Luttinger liquid (LL) plasmons in one-dimensional (1D) metallic carbon nanotubes. Elementary excitations in LL are characterized by collective charge and spin excitations, i.e., plasmons and spinons. Consequently, electrons injected into the nanotubes transform efficiently into LL plasmons, a hybrid excitation of electromagnetic fields and electrons. We design nanoantennas coupled to the carbon nanotube to radiate LL plasmons into the far field. LL-based IRLEDs can be designed to selectively emit at wavelengths across the far- and mid-infrared spectra. An electrical-to-optical power conversion efficiency up to 3.2% may be achieved. Such efficient and narrowband LL-based IRLEDs can enable novel infrared nanophotonic applications.

36 MATERIALS SCIENCE↗