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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Propagation and absorption of high-intensity femtosecond laser radiation in diamond

Femtosecond interferometry has been used to experimentally study the photoexcitation of the electron subsystem of diamond exposed to femtosecond laser pulses of intensity 10{sup 11} to 10{sup 14} W cm{sup -2}. The carrier concentration has been determined as a function of incident intensity for three harmonics of a Ti : sapphire laser (800, 400 and 266 nm). The results demonstrate that, in a wide range of laser fluences (up to those resulting in surface and bulk graphitisation), a well-defined multiphoton absorption prevails. We have estimated nonlinear absorption coefficients for pulsed radiation at λ = 800 nm (four-photon transition) and at 400 and 266 nm (indirect and direct two-photon transitions, respectively). It has also been shown that, at any considerable path length of a femtosecond pulse in diamond (tens of microns or longer), the laser beam experiences a severe nonlinear transformation, determining the amount of energy absorbed by the lattice, which is important for the development of technology for diamond photostructuring by ultrashort pulses. The competition between wave packet self-focusing and the plasma defocusing effect is examined as a major mechanism governing the propagation of intense laser pulses in diamond. (interaction of laser radiation with matter. laser plasma)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Effect of absorbing coating on ablation of diamond by IR laser pulses

We study the possibility of increasing the efficiency and quality of laser ablation microprocessing of diamond by preliminary forming an absorbing layer on its surface. The laser pulses having a duration of 1 ps and 10 ns at a wavelength of 1030 nm irradiate the polycrystalline diamond surface coated by a thin layer of titanium or graphite. We analyse the dynamics of the growth of the crater depth as a function of the number of pulses and the change in optical transmission of the ablated surface. It is found that under irradiation by picosecond pulses the preliminary graphitisation allows one to avoid the laser-induced damage of the internal diamond volume until the appearance of a self-maintained graphitised layer. The absorbing coating (both graphite and titanium) much stronger affects ablation by nanosecond pulses, since it reduces the ablation threshold by more than an order of magnitude and allows full elimination of a laser-induced damage of deep regions of diamond and uncontrolled explosive ablation in the near-surface layer. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Antireflection coating of diamond elements of power optics for CO{sub 2} lasers

A technology of deposition of a single-layer PbF{sub 2} coating, antireflecting for the CO{sub 2} laser radiation, on diamond substrates is developed. As substrates, use is made of plates of polycrystalline CVD diamond. The transmission coefficient of diamond plates with two-side coating attains 98.5 % – 99 %. The measured laser-induced damage threshold of such plates under normal environment conditions for the pulsed (τ ∼ 100 ns) and continuous-wave radiation of CO{sub 2} lasers amounts to 250 and 4 MW cm{sup –2}, respectively. These values are comparable with the thresholds of the diamond substrate damage. The increase in the damage threshold of the AR coating under continuous-wave irradiation to 5.5 MW cm{sup –2} is found in the case of preliminary multiple irradiation of samples by weaker laser pulses. This effect can be explained by the pollutant removal from the surface of the film without its damage (laser cleaning effect). The bibliography includes 28 references. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Metallization of diamond

Experimental discovery of ultralarge elastic deformation in nanoscale diamond and machine learning of its electronic and phonon structures have created opportunities to address new scientific questions. Can diamond, with an ultrawide bandgap of 5.6 eV, be completely metallized, solely under mechanical strain without phonon instability, so that its electronic bandgap fully vanishes? Through first-principles calculations, finite-element simulations validated by experiments, and neural network learning, we show here that metallization/demetallization as well as indirect-to-direct bandgap transitions can be achieved reversibly in diamond below threshold strain levels for phonon instability. We identify the pathway to metallization within six-dimensional strain space for different sample geometries. We also explore phonon-instability conditions that promote phase transition to graphite. These findings offer opportunities for tailoring properties of diamond via strain engineering for electronic, photonic, and quantum applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High performance ionic-liquid-gated air doped diamond field-effect transistors

Here we report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ~200 cm 2 V –1 s –1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ~1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from –3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Bottom-up fabrication of scalable room-temperature diamond quantum computing and sensing technologies

The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.

CVD↗
DOE OSTI2026

Defect in diamond with millisecond-scale spin relaxation time at room temperature

Spin defects in diamond are promising platforms for quantum sensing. The longest electron spin relaxation times (T1) at room temperature for solid-state defects are observed in nitrogen vacancy centers in diamond, which can reach 6.67 ms [1], and substitutional nitrogen (“P1 centers”) in diamond, which exhibit a T1 of 2 ms [2]. No other solid-state defect has exhibited millisecond-scale spin relaxation times at room temperature thus far. Here, we characterize the spin properties of the WAR5 defect in diamond [3] with pulsed electron spin resonance. The observed T1 is one of the longest for solid-state spin defects: 0.97(27) ms at room temperature and 14.38(19) min at 4 K. The observed coherence time (T2) is 246(7) µs, which can be extended to 6.49(34) ms at 4 K with dynamical decoupling. Finally, we demonstrate optical spin polarization with a range of wavelengths from 405 nm to 500 nm and propose potential zero-phonon line candidates.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Engineering diamond interfaces free of dark spins

Nitrogen-vacancy (NV) centers in diamond are utilized extensively as quantum sensors for imaging fields at the nanoscale. The ultrahigh sensitivity of NV magnetometers has enabled the detection and spectroscopy of individual electron spins, with potentially far-reaching applications in condensed matter physics, spintronics, and molecular biology. However, the surfaces of these diamond sensors naturally contain electron spins, which create a background signal that can be hard to differentiate from the signal of the target spins. In this study, we develop a surface modification approach that eliminates the unwanted signal of these so-called dark electron spins. Our surface passivation technique, based on coating diamond surfaces with a thin titanium oxide (Ti⁢O 2 ) layer, reduces the dark spin density. The observed reduction in dark spin density aligns with our findings on the electronic structure of the diamond-Ti⁢O 2 interface. The reduction, from a typical value of 2000 μm −2 to a value below that set by the detection limit of our NV sensors (200 μm −2 ), results in a twofold increase in Hahn-echo coherence time of near surface NV centers. Furthermore, we derive a comprehensive spin model that connects dark spin relaxation with NV coherence, providing additional insights into the mechanisms behind the observed spin dynamics. Our findings are directly transferable to other quantum platforms, including nanoscale solid-state qubits and superconducting qubits.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2018

High Bragg reflectivity of diamond crystals exposed to multi-kW mm –2 X-ray beams

X-ray free-electron lasers in the oscillator configuration (XFELO) are future fully coherent hard X-rays sources with ultrahigh spectral purity. X-ray beams circulate in an XFELO optical cavity comprising diamond single crystals. They function as high-reflectance (close to 100%), narrowband (~10 meV) Bragg backscattering mirrors. The average power density of the X-ray beams in the XFELO cavity is predicted to be as high as ~10 kW mm –2 . Therefore, XFELO feasibility relies on the ability of diamond crystals to withstand such a high radiation load and preserve their high reflectivity. Here the endurance of diamond crystals to irradiation with multi-kW mm –2 power density X-ray beams is studied. It is shown that the high Bragg reflectivity of the diamond crystals is preserved after the irradiation, provided it is performed at ~1 × 10 –8 Torr high-vacuum conditions. In conclusion, irradiation under 4 × 10 –6 Torr results in a ~1 meV shift of the Bragg peak, which corresponds to a relative lattice distortion of 4 × 10 –8 , while the high Bragg reflectivity stays intact.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Small Bragg-plane slope errors revealed in synthetic diamond crystals

Wavefront-preserving X-ray diamond crystal optics are essential for numerous applications in X-ray science. Perfect crystals with flat Bragg planes are a prerequisite for wavefront preservation in Bragg diffraction. However, this condition is difficult to realize in practice because of inevitable crystal imperfections. Here, X-ray rocking curve imaging is used to study the smallest achievable Bragg-plane slope errors in the best presently available synthetic diamond crystals and how they compare with those of perfect silicon crystals. It is shown that the smallest specific slope errors in the best diamond crystals are about 0.08 (3) µrad mm -2 . These errors are only 50% larger than the 0.05 (2) µrad mm -2 specific slope errors measured in perfect silicon crystals. High-temperature annealing at 1450°C of almost flawless diamond crystals reduces the slope errors very close to those of silicon. Further investigations are in progress to establish the wavefront-preservation properties of these crystals.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Diamond channel-cut crystals for high-heat-load beam-multiplexing narrow-band X-ray monochromators

Next-generation high-brilliance X-ray photon sources call for new X-ray optics. Here we demonstrate the possibility of using monolithic diamond channel-cut crystals as high-heat-load beam-multiplexing narrow-band mechanically stable X-ray monochromators with high-power X-ray beams at cutting-edge high-repetition-rate X-ray free-electron laser (XFEL) facilities. The diamond channel-cut crystals fabricated and characterized in these studies are designed as two-bounce Bragg reflection monochromators directing 14.4 or 12.4 keV X-rays within a 15 meV bandwidth to 57 Fe or 45 Sc nuclear resonant scattering experiments, respectively. The crystal design allows out-of-band X-rays transmitted with minimal losses to alternative simultaneous experiments. Only ≲2% of the incident ∼100 W X-ray beam is absorbed in the 50 µm-thick first diamond crystal reflector, ensuring that the monochromator crystal is highly stable. Other X-ray optics applications of diamond channel-cut crystals are anticipated.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Polished diamond X-ray lenses

High-quality bi-concave 2D focusing diamond X-ray lenses of apex-radius R = 100 µm produced via laser-ablation and improved via mechanical polishing are presented here. Both for polished and unpolished individual lenses and for stacks of ten lenses, the remaining figure errors determined using X-ray speckle tracking are shown and these results are compared with those of commercial R = 50 µm beryllium lenses that have similar focusing strength and physical aperture. For two stacks of ten diamond lenses (polished and unpolished) and a stack of eleven beryllium lenses, this paper presents measured 2D beam profiles out of focus and wire scans to obtain the beam size in the focal plane. These results are complemented with small-angle X-ray scattering (SAXS) measurements of a polished and an unpolished diamond lens. Again, this is compared with the SAXS of a beryllium lens. The polished X-ray lenses show similar figure errors to commercially available beryllium lenses. While the beam size in the focal plane is comparable to that of the beryllium lenses, the SAXS signal of the polished diamond lenses is considerably lower.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Plasma-free hydrogenation of oxygen-terminated polycrystalline diamond as determined by circular transmission line measurements (CTLM)

Here, we developed a process to fully hydrogen-terminate diamond by annealing in forming gas. The surface was characterized using circular transmission line measurements (CTLMs) to evaluate the onset and degree of hydrogen termination. No hydrogenation occurred at temperatures at or below 500 °C. Hydrogenation occurs after annealing for 5 min at temperatures between 600 and 1000 °C, with complete hydrogenation achieved at 1000 °C, which showed the same sheet resistance as diamond terminated in a hydrogen plasma. Annealing at temperatures lower than 1000 °C resulted in only partial hydrogenation but can be compensated by increasing the anneal time. At temperatures exceeding 1100 °C, the sheet resistance suddenly and drastically increases, indicating instability of a hydrogen-terminated diamond surface at elevated temperatures under forming gas. The activation energy was determined to be 1.20eV. SEM inspection showed that annealing in hydrogen produced significantly reduced surface roughness compared to diamond surfaces hydrogenated in a H 2 plasma.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A novel synthetic single crystal diamond device for in vivo dosimetry

Purpose: Aim of the present work is to evaluate the synthetic single crystal diamond Schottky photodiode developed at the laboratories of “Tor Vergata” University in Rome in a new dosimeter configuration specifically designed for offline wireless in vivo dosimetry (IVD) applications. Methods: The new diamond based dosimeter, single crystal diamond detector (SCDD-iv), consists of a small unwired detector and a small external reading unit that can be connected to commercial electrometers for getting the detector readout after irradiation. Two nominally identical SCDD-iv dosimeter prototypes were fabricated and tested. A basic dosimetric characterization of detector performances relevant for IVD application was performed under irradiation with {sup 60}Co and 6 MV photon beams. Preirradiation procedure, response stability, short and long term reproducibility, leakage charge, fading effect, linearity with dose, dose rate dependence, temperature dependence, and angular response were investigated. Results: The SCDD-iv is simple, with no cables linked to the patient and the readout is immediate. The range of response with dose has been tested from 1 up to 12 Gy; the reading is independent of the accumulated dose and dose rate independent in the range between about 0.5 and 5 Gy/min; its temperature dependence is within 0.5% between 25 and 38 °C, and its directional dependence is within 2% from 0° to 90°. The combined relative standard uncertainty of absorbed dose to water measurements is estimated lower than the tolerance and action level of 5%. Conclusions: The reported results indicate the proposed novel offline dosimeter based on a synthetic single crystal diamond Schottky photodiode as a promising candidate for in vivo dosimetry applications with photon beams.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2018

Crystal-Chemical Features of Diamonds Implanted with Helium Ions

Implantation of high-energy helium ions into crystals of natural colorless diamonds colors them bright yellow, brown, or black, depending on the implantation dose. The nature of the induced fantasy color and crystal-chemical features of the implanted diamonds have been investigated by IR spectroscopy and Raman spectroscopy. It is established that the radiation effect of helium ions on the diamond crystal structure results in the transformation of nitrogen-vacancy centers in its bulk with the formation of new A-type color centers, as well as the formation of carbon nanoclusters with the sp{sup 2} hybridization of bonds (which is typical of graphite) in black diamonds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

Various methods for the formation of ohmic contacts to boron-doped δ layers in CVD-diamond epitaxial structures are investigated. In the first variant, an additional thin heavily doped layer was formed on the diamond surface to which an ohmic contact is formed. Then, the surface p{sup +} layer between the contact pads is etched out; therefore, the current in the structure flows only through a buried δ layer. In the second approach, the doped diamond selectively grows in the contact windows under a metallic mask after preliminary etching of the undoped diamond layer (cap) up to the δ layer. In this case, the heavily doped p{sup +} layer forms an end contact to the δ layer. These two variants differ in terms of the conditions of applicability, the complexity of the manufacturing technology, the value of the contact resistance, and can be used to solve problems in which it is necessary to have a different quality of the contacts, such as the formation of transistor structures or test cells for measuring physical characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

It is shown, both analytically and numerically, that the hole mobility in boron δ-doped (i.e., with a thickness on the order of several lattice constants) diamond layers drops with a decrease in their two-dimensional concentration during depletion of the δ-doped layer by an external voltage. This drop is most pronounced for the maximum initial two-dimensional hole concentrations ~ 3 × 10{sup 13} cm{sup –2} (limited from above by the condition for the possibility of their significant reduction without the electrical breakdown of diamond). This is explained by a decrease in the degree of screening of scattering Coulomb potentials of ionized boron atoms and an increase in the scattering efficiency of degenerate holes from these atoms due to a drop in the kinetic energy of holes. The corresponding calculations of the transport scattering cross section of holes are performed beyond the Born approximation (i.e., perturbation theory), which is inapplicable for boron δ-doped diamond layers. The predicted effect can be used to increase the efficiency of source-to-drain current modulation by a gate voltage in diamond field-effect transistors (FETs) with δ-doped conduction channels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Modeling of Phase Transitions of Graphites to Diamond-Like Phases

The method of the density functional theory is used to study structural transformations between graphites and diamond-like phases. The calculations have been carried out in two approximations: a local density approximation and a generalized gradient approximation. It is found that the phase transitions of hexagonal graphene layers to a cubic diamond and diamond-like phases must occur at uniaxial compressions of ~57–71 GPa, whereas some diamond-like phases can be obtained from tetragonal graphene layers at significantly lower pressures of 32–52 GPa. The X-ray diffraction patterns have been calculated for the phase transition of graphite I4{sub 1}/amd to tetragonal LA10 phase that takes place at the minimum pressure that can be used for experimental identification of these compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗