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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Miniature Intelligent Sensor Module

An electronic unit denoted the Miniature Intelligent Sensor Module performs sensor-signal-conditioning functions and local processing of sensor data. The unit includes four channels of analog input/output circuitry, a processor, volatile and nonvolatile memory, and two Ethernet communication ports, all housed in a weathertight enclosure. The unit accepts AC or DC power. The analog inputs provide programmable gain, offset, and filtering as well as shunt calibration and auto-zeroing. Analog outputs include sine, square, and triangular waves having programmable frequencies and amplitudes, as well as programmable amplitude DC. One innovative aspect of the design of this unit is the integration of a relatively powerful processor and large amount of memory along with the sensor-signalconditioning circuitry so that sophisticated computer programs can be used to acquire and analyze sensor data and estimate and track the health of the overall sensor-data-acquisition system of which the unit is a part. The unit includes calibration, zeroing, and signalfeedback circuitry to facilitate health monitoring. The processor is also integrated with programmable logic circuitry in such a manner as to simplify and enhance acquisition of data and generation of analog outputs. A notable unique feature of the unit is a cold-junction compensation circuit in the back shell of a sensor connector. This circuit makes it possible to use Ktype thermocouples without compromising a housing seal. Replicas of this unit may prove useful in industrial and manufacturing settings - especially in such large outdoor facilities as refineries. Two features can be expected to simplify installation: the weathertight housings should make it possible to mount the units near sensors, and the Ethernet communication capability of the units should facilitate establishment of communication connections for the units.

Beech, Russell S.↗
NASA NTRS1985

Advanced dc-Traction-Motor Control System

Motor-control concept for battery-powered vehicles includes stateof-the-art power-transistor switching and separate excitation of motor windings in traction and regenerative braking. Switching transistors and other components of power-conditioning subsystem operate under control of computer that coordinates traction, braking, and protective functions.

Vittone, O.↗
DOE OSTI2024

Absence of High-Pressure Ground-State Reentrant Ferroelectricity in PbTiO 3

We study ferroelectricity in the classic perovskite ferroelectric PbTiO 3 to high pressures with density functional theory (DFT) and experimental diamond-anvil techniques. We use second harmonic generation spectroscopy to detect lack of inversion symmetry. Consistent with early understanding and experiments, we find that ferroelectricity disappears at moderate pressures. However, DFT computations show that the disappearance arises from the overtaking of zone boundary instabilities, and not from the squeezing out of the off-centering ferroelectric displacements with pressure, as previously thought. Moreover, at high pressures the distorted perovskite phases are metastable with respect to a new dense centrosymmetric postperovskite phase with P⁢2 1 /m symmetry and 8-coordinated Ti, which becomes stable at about 70 GPa.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Characteristics of Amorphous As{sub 2}S{sub 3} Semiconductor Films Obtained via Spin Coating

Centrifugation is used in fabricating, e.g., films with large areas and/or thicknesses of several micrometers. However, it has yet to be widely employed for chalcogenide compounds, due to their relatively weak solubility in most solvents. Determining the optimum conditions for preparing solutions of chalcogenide compounds and obtaining films via centrifugation is therefore of great interest. Specific features of amorphous arsenic sulfide (As{sub 2}S{sub 3}) films prepared via the centrifugation of solutions in n-butylamine have been studied. These films were characterized by means of X-ray diffraction analysis, IR spectroscopy, atomic-force microscopy and Raman spectroscopy. It was shown that amorphous As{sub 2}S{sub 3} films have a greater elasticity modulus than those of analogous composition produced via thermal evaporation in vacuum, or As{sub 2}S{sub 3} glass. A structural model based on arsenic sulfide clusters whose surfaces are bound by negatively and positively charged ions is used to explain the experimental results obtained in this work. DC measurements show that the amorphous films exhibit semiconductor-type conductivity. Their room temperature conductivity is ~10{sup −15} S/cm, which indicates good dielectric properties. The films are optically transparent starting from the yellow spectral range, making them promising functional materials for engineering applications in optics and photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Characterization of Self-Magnetic Pinch (SMP) radiographic diode performance on RITS-6 at Sandia National Laboratories: 1) Diode Dynamics, DC Heating to extend Radiation Pulse

Radiographic diodes focus an intense electron beam to a small spot size to minimize the source area of energetic photons for radiographic interrogation. The self-magnetic pinch (SMP) diode has been developed as such a source and operated as a load for the RITS-6 Inductive Voltage Adder (IVA) driver. While experiments support the generally accepted conclusion that a 1:1 aspect diode (cathode diameter equals anode-cathode gap) delivers optimum SMP performance, such experiments also show that reducing the cathode diameter, while reducing spot size, also results in reduced radiation dose, by as much as 50%, and degraded shot reproducibility. Analyzation of the effective electron impingement angle on the anode converter with time made possible by a newly developed dose-rate array diagnostic indicates that fast-developing oscillations of the angle are correlated with early termination of the radiation pulse on many of the smaller-diameter SMP shots. This behavior as a function of relative cathode size persists through experiments with output voltages and currents up to 11.5 MV and 225 kA, respectively, and with spot sizes below ~ few mm. Since simulations to date have not predicted such oscillatory behavior, considerable discussion of the angle-behavior of SMP shots is made to lend credence to the inference. There is clear anecdotal evidence that DC heating of the SMP diode region leads to stabilization of this oscillatory behavior. This is the first of two papers on the performance of the SMP diode on the RITS-6 accelerator.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Defect-engineered GaN high electron mobility transistors for enhanced radiation tolerance

This study explores the radiation resilience of GaN high-electron-mobility transistors (HEMTs) under various preconditioning treatments—pristine, electro-pulsed, electrically overstressed, and 60 Co gamma-irradiated—with a focus on enhancing survivability in high-radiation environments. Key findings emphasize the gate region’s central role in radiation sensitivity, with increased defect concentrations leading to reduced sensitivity—as determined from reduced single-event transient intensities during pulsed-laser studies—and impacting charge-transport dynamics. Notably, the most sensitive region shifted as a function of bias state, with the drain side of the gate being most sensitive under negative gate bias and the source side under unbiased conditions due to two-dimensional electron gas disruptions. These insights clarify the mechanisms influencing radiation sensitivity in microelectronics and highlight the potential of defect and strain engineering to enhance the radiation hardness of GaN HEMTs across various operational states, providing valuable guidance for applications in space, defense, and other radiation-rich environments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-frequency electrical behavior in V 3 O 5 thin films

Vanadium oxides are known for their metal–insulator transition (MIT), with V 3 O 5 being notable for its transition temperature exceeding room temperature. At about 430 K, this material shows a change in crystal symmetry accompanied with one order of magnitude increase in its electrical conductivity and alterations in its optical properties. Although the property changes during the MIT in V 3 O 5 are less pronounced than those observed in VO 2 , its transition temperature is 90 K higher, making it appealing for applications requiring elevated temperatures. In this article, the high-frequency characteristics were determined in a V 3 O 5 two-terminal device in the range from 5 to 35 GHz. The S-parameters showed that the return loss at room temperature was close to −1.5 dB, and the isolation between ports was approximately −50 dB. At temperatures above the metal–insulator transition, the isolation decreased to around −40 dB at 35 GHz. For S11 and S22, similar behavior was observed at room temperature, with a notable change in the S-parameter phase of the device. This behavior suggests that V 3 O 5 may function well as a capacitor because the considerable change in phase could control the flow of electrical signals in devices. This property also may be used for matching purposes, especially considering its response to temperature changes. Additionally, conductivity calculation from S-parameters shows a decrease of approximately two orders of magnitude at 500 K and one order of magnitude at 300 K compared to DC values. These findings highlight V 3 O 5 potential for integration into radio frequency devices that demand consistent performance in high-temperature environments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mechanochemical Solid Form Screening of Zeolitic Imidazolate Frameworks Using Structure-Directing Liquid Additives

We demonstrate a systematic application of the mechanochemical liquid-assisted grinding (LAG) methodology to screen for forms of zinc imidazolate (ZnIm 2 ), of fundamental importance as the simplest member of the zeolitic imidazolate framework materials family. The exploration of 45 different liquid additives, selected based on their molecular structure and physicochemical properties has resulted in eight different ZnIm 2 topological forms, appearing in 13 crystallographically distinct solid forms (including two previously unknown forms of the crb (BCT) topology), amorphous phases, and the interrupted moc-Zn 4 Im 8 HIm. All prepared topological forms were also explored computationally, using dispersion-corrected periodic density functional theory (DFT) calculations, enabling the rationalization of screening outcomes, and setting the stage for future prediction of additive-directed metal–organic framework (MOF) synthesis. This first systematic exploration of LAG in screening for three-dimensional MOFs demonstrates the potential of the liquid additive to not only accelerate materials synthesis, but also to direct it toward topologically different MOFs. The discovery of novel forms of a material that already exhibits at least 21 crystallographically and functionally different forms provides a strong testimony on the power of mechanochemistry in metal–organic materials discovery.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Haldane topological spin-1 chains in a planar metal-organic framework

Haldane topological materials contain unique antiferromagnetic chains with symmetry-protected energy gaps. Such materials have potential applications in spintronics and future quantum computers. Haldane topological solids typically consist of spin-1 chains embedded in extended three-dimensional (3D) crystal structures. Here, we demonstrate that [Ni(μ-4,4'-bipyridine)(μ-oxalate)] n (NiBO) instead adopts a two-dimensional (2D) metal-organic framework (MOF) structure of Ni 2+ spin-1 chains weakly linked by 4,4'-bipyridine. NiBO exhibits Haldane topological properties with a gap between the singlet ground state and the triplet excited state. The latter is split by weak axial and rhombic anisotropies. Several experimental probes, including single-crystal X-ray diffraction, variable-temperature powder neutron diffraction (VT-PND), VT inelastic neutron scattering (VT-INS), DC susceptibility and specific heat measurements, high-field electron spin resonance, and unbiased quantum Monte Carlo simulations, provide a detailed, comprehensive characterization of NiBO. Vibrational (also known as phonon) properties of NiBO have been probed by INS and density-functional theory (DFT) calculations, indicating the absence of phonons near magnetic excitations in NiBO, suppressing spin-phonon coupling. The work here demonstrates that NiBO is indeed a rare 2D-MOF Haldane topological material.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Perpendicular momentum input of lower hybrid waves and its influence on driving plasma rotation.

The mechanism of perpendicular momentum input of lower hybrid waves and its influence on plasma rotation are studied. Discussion for parallel momentum input of lower hybrid waves is presented for comparison. It is found out that both toroidal and poloidal projections of perpendicular momentum input of lower hybrid waves are stronger than those of parallel momentum input. The perpendicular momentum input of lower hybrid waves therefore plays a dominant role in forcing the changes of rotation velocity observed during lower hybrid current drive. Lower hybrid waves convert perpendicular momentum carried by the waves into the momentum of dc electromagnetic field by inducing a resonant-electron flow across flux surfaces therefore charge separation and a radial dc electric field. The dc field releases its momentum into plasma through the Lorentz force acting on the radial return current driven by the radial electric field. Plasma is spun up by the Lorentz force. An improved quasilinear theory with gyro-phase dependent distribution function is developed to calculate the radial flux of resonant electrons. Rotations are determined by a set of fluid equations for bulk electrons and ions, which are solved numerically by applying a finite-difference method. Analytical expressions for toroidal and poloidal rotations are derived using the same hydrodynamic model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Power converter using near-load output capacitance, direct inductor contact, and/or remote current sense

An apparatus includes a first circuit board including first components including a load, and a second circuit board including second components including switching power devices and an output inductor. Ground and output voltage contacts between the circuit boards are made through soldered or connectorized interfaces. Certain components on the first circuit board and certain components, including the output inductor, on the second circuit board act as a DC-DC voltage converter for the load. An output capacitance for the conversion is on the first circuit board with no board-to-board interface between the output capacitance and the load. The inductance of the board-to-board interface functions as part of the output inductor's inductance and not as a parasitic inductance. Sense components for sensing current through the output inductor are located on the first circuit board. Parasitic inductance of the board-to-board interface has less effect on a sense signal provided to a controller.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Characterization of self-magnetic pinch (SMP) radiographic diode performance on RITS-6 at Sandia National Laboratories. I. Diode dynamics, DC heating to extend radiation pulse

Radiographic diodes focus on an intense electron beam to a small spot size to minimize the source area of energetic photons for radiographic interrogation. The self-magnetic pinch (SMP) diode has been developed as such a source and operated as a load for the six-cavity radiographic integrated test stand (RITS-6) inductive voltage adder driver. While experiments support the generally accepted conclusion that a 1:1 aspect diode (cathode diameter equals anode–cathode gap) delivers optimum SMP performance, such experiments also show that reducing the cathode diameter, while reducing spot size, also results in reduced radiation dose, by as much as 50%, and degraded shot reproducibility. Analysis of the effective electron impingement angle on the anode converter with time made possible by a newly developed dose-rate array diagnostic indicates that fast-developing oscillations of the angle are correlated with early termination of the radiation pulse on many of the smaller-diameter SMP shots. This behavior as a function of relative cathode size persists through experiments with output voltages and currents up to 11.5 MV and 225 kA, respectively, and with spot sizes below approximately few millimeters. Since simulations to date have not predicted such oscillatory behavior, considerable discussion of the angle behavior of SMP shots is made to lend credence to the inference. We report there is clear anecdotal evidence that DC heating of the SMP diode region leads to stabilization of this oscillatory behavior. This is the first of two papers on the performance of the SMP diode on the RITS-6 accelerator.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Iron(III)–Oxo Cluster Chemistry with Dimethylarsinate Ligands: Structures, Magnetic Properties, and Computational Studies

A program has been initiated to develop Fe III /oxo cluster chemistry with the ‘pseudo-carboxylate’ ligand dimethylarsinate (Me 2 AsO 2 - ) for comparison with the well investigated Fe III /oxo/carboxylate cluster area. The synthesis and characterization of three polynuclear Fe III complexes are reported, [Fe 12 O 4 (O 2 C t Bu) 8 (O 2 AsMe 2 ) 17 (H 2 O) 3 ]Cl 3 (1), Na 2 [Fe 12 Na 2 O 4 (O 2 AsMe 2 ) 20 (NO 3 ) 6 (Me 2 AsO 2 H) 2 (H 2 O) 4 ](NO 3 ) 6 (2) and [Fe 3 (O 2 AsMe 2 ) 6 (Me 2 AsO 2 H) 2 (hqn) 2 ](NO 3 ) (3), where hqn is 8-hydroxyquinoline. The Fe 12 core of 1 is a type never previously encountered in Fe III carboxylate chemistry, consisting of two Fe 6 units each of which comprises two {Fe 3 (μ 3 -O 2- )} units bridged by three Me 2 AsO 2 - groups and linked into an Fe 12 loop structure by two anti-anti η 1 :η 1 :μ Me 2 AsO 2 - groups, a bridging mode extremely rare with carboxylates. 2 also consists of two Fe 6 units, differing in their ligation from those in 1, and this time linked together into a linear structure by a central {Na 2 (NO 3 ) 2 } bridging unit. 3 is a linear Fe 3 complex with no monoatomic bridges between Fe III ions, a very rare situation in Fe III chemistry with any ligands, and unprecedented in Fe carboxylate chemistry. The distinct differences observed in arsinate vs carboxylate ligation modes are rationalized largely based on the greater basicity of the former vs the latter. Variable-temperature dc and ac magnetic susceptibility data reveal all Fe 2 pairwise interactions to be antiferromagnetic. For 1 and 2, the different J ij couplings were estimated by use of a magnetostructural correlation for high nuclearity Fe III -oxo clusters and by density functional theory calculations using broken symmetry methods, allowing identification of their relative spin vector alignments and thus rationalization of their S = 0 ground states. The J ij values were then used as input values to give excellent fits of the experimental χM T vs T data. For 3, the fits of the experimental χM T vs T data to the Van Vleck equation or with PHI gave a very weak J 12 = -0.8(1) cm -1 (H = –2JŠ i ·Š j convention) between adjacent Fe III ions, and an S = 5/2 ground state. Furthermore, these initial Fe III arsinate complexes also provide structural parameters that help validate literature assignments of arsinate binding modes to iron oxide/hydroxide minerals as part of environmental concerns of using arsenic-containing herbicides in agriculture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Electronic structure and small-hole polarons in YTiO 3

As a prototypical Mott insulator with ferromagnetic ordering, YTiO 3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterizations of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior with an activation energy of ~0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory calculations. Hard x-ray photoelectron spectroscopy measurements show the lower Hubbard band at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Novel ceramic capacitors with ultrahigh energy density and efficiency (Final Technical Report)

Antiferroelectric ceramics are a special class of material that have shown great potential as the dielectric in electrical capacitors due to their high energy- and power-density. During each charge-discharge cycle, the ceramic undergoes transformation to a ferroelectric phase and resumes its antiferroelectric phase. The hysteresis associated with the transitions leads to a mediocre energy efficiency and service lifetime of antiferroelectric capacitors and, hence, their almost absence in commercial products. Under the support of this research project, we first formulated a universal lattice-compatibility theory that included electrostatic polarization energy along with elastic energy and thermal energy to understand the origin of the hysteresis in antiferroelectric oxides. Guided by this compatibility theory, we conducted high-throughput density functional theory (DFT) calculations to assess chemical modifiers and their effect on crystal structures of 400+ PbZrO 3 -based compositions. Down-selected compositions were experimentally validated for their suppressed hysteresis and higher energy efficiency. The verified low-hysteresis compositions were then expanded to an antiferroelectric ceramic library with nearly 500 new compositions (more than 1,500 samples) using high-throughput experiments involving ceramic synthesis and property screening. The large quantity of data generated (theory and experimental) in these tasks were processed by machine-learning techniques and identified trends were fed to the next iteration. In the end, we successfully discovered four compositions with near-zero hysteresis, yielding a world-record energy efficiency of 98.2% at an energy density of 3.0 J/cm 3 . Furthermore, our antiferroelectric ceramic capacitor reaches 79.5 million charge-discharge cycles lifetime, a factor of 80 enhancement over previous antiferroelectric ceramics with large hysteresis. These research accomplishments have not only met the milestones set in the SOPO, but also led to two patent filings, three journal publications (one of them was in Advanced Materials, impact factor 29.4), and nine oral presentations at various venues. Through the course of the project, three postdocs, four Ph.D. students, and one M.S. student were trained. In short, our project established a new methodology in searching next-generation functional ceramics on the fundamental side and discovered several high-efficiency antiferroelectric compositions for capacitors on the applied side. Once fabricated into the multilayer form for commercial applications, these ceramic capacitors can potentially enable the high temperature high power density DC-link capacitors that are critical for the next generation inverters in electric vehicles. The project also significantly contributed to the nation’s workforce development in the STEM fields.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Design, processing, and testing of LSI arrays for space station

At wafer probe, units of the TA6567 circuit, a beam leaded COS/MOS/SOS 256-bit RAM, were demonstrated to be functionally perfect. An aluminum gate current-sense version and a silicon-gate voltage-sense version of this memory were developed. Initial base line data for the beam lead SOS process using the TA5388 circuit show the stability of the dc device characteristics through the beam lead processing.

Schneider, W. C.↗
NASA NTRS1986

Rotating Capacitor Measures Steady Electric Fields

Portable sensor measures electric fields created by dc powerlines or other dc-high-voltage sources. Measures fields from 70 to 50,000 V/m with linearity of 2 percent. Sensor used at any height above ground. Measures both magnitude and direction of field and provides signals representing these measurements to remote readout device. Sensor functions with minimal disturbance of field it is measuring.

Johnston, A. R.↗
NASA NTRS1997

Updating Gimbal Actuators for the Long Journey to Saturn

The Cassini mission requires extraordinary life and reliability from the linear servo-actuators which position the spacecraft's redundant rocket engines. Both commercial actuators and existing in-house actuator designs were studied for this application. Ultimately a device inherited from JPL's Mariner and Viking missions to Mars was selected because of its close match to functional requirements and its flight pedigree. However, several design improvements were necessary to meet life and reliability goals. Special attention was focused on reliability testing of the motor and mechanism at all stages of procurement and assembly because a brush type of DC motor was retained from the old design. These improvements and, in particular, efforts to develop new component sources are discussed in this paper.

Iskenderian, Theodore↗