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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

In this paper, we have demonstrated the dual role of boron doping in enhancing the device performance parameters as well as the device stability in low temperatures (200 °C) sol-gel processed ZnO thin film transistors (TFTs). Our studies suggest that boron is able to act as a carrier generator and oxygen vacancy suppressor simultaneously. Boron-doped ZnO TFTs with 8 mol. % of boron concentration demonstrated field-effect mobility value of 1.2 cm{sup 2} V{sup −1} s{sup −1} and threshold voltage of 6.2 V, respectively. Further, these devices showed lower shift in threshold voltage during the hysteresis and bias stress measurements as compared to undoped ZnO TFTs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The structure and properties of boron carbide ceramics modified by high-current pulsed electron-beam

The present work is devoted to numerical simulation of temperature fields and the analysis of structural and strength properties of the samples surface layer of boron carbide ceramics treated by the high-current pulsed electron-beam of the submillisecond duration. The samples made of sintered boron carbide ceramics are used in these investigations. The problem of calculating the temperature field is reduced to solving the thermal conductivity equation. The electron beam density ranges between 8…30 J/cm{sup 2}, while the pulse durations are 100…200 μs in numerical modelling. The results of modelling the temperature field allowed ascertaining the threshold parameters of the electron beam, such as energy density and pulse duration. The electron beam irradiation is accompanied by the structural modification of the surface layer of boron carbide ceramics either in the single-phase (liquid or solid) or two-phase (solid-liquid) states. The sample surface of boron carbide ceramics is treated under the two-phase state (solid-liquid) conditions of the structural modification. The surface layer is modified by the high-current pulsed electron-beam produced by SOLO installation at the Institute of High Current Electronics of the Siberian Branch of the Russian Academy of Sciences, Tomsk, Russia. The elemental composition and the defect structure of the modified surface layer are analyzed by the optical instrument, scanning electron and transmission electron microscopes. Mechanical properties of the modified layer are determined measuring its hardness and crack resistance. Research results show that the melting and subsequent rapid solidification of the surface layer lead to such phenomena as fragmentation due to a crack network, grain size reduction, formation of the sub-grained structure due to mechanical twinning, and increase of hardness and crack resistance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Availability of surface boron species in improved oxygen reduction activity of Pt catalysts: A first-principles study

The oxidation process of boron (B) species on the Pt(111) surface and the beneficial effects of boron oxides on the oxygen reduction activity are investigated by first-principles calculations. The single-atom B anchored on the Pt surface has a great attraction for the oxygen species in the immediate environment. With the dissociation of molecular oxygen, a series of boron oxides is formed in succession, both indicating exothermic oxidation reactions. After BO{sub 2} is formed, the subsequent O atom immediately participates in the oxygen reduction reaction. The calculated O adsorption energy is appreciably decreased as compared to Pt catalysts, and more approximate to the optimal value of the volcano plot, from which is clear that O hydrogenation kinetics is improved. The modulation mechanism is mainly based on the electron-deficient nature of stable boron oxides, which normally reduces available electronic states of surface Pt atoms that bind the O by facilitating more electron transfer. This modification strategy from the exterior opens the new way, different from the alloying, to efficient electrocatalyst design for PEMFCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Manganese-centered tubular boron cluster – MnB{sub 16}{sup −}: A new class of transition-metal molecules

We report the observation of a manganese-centered tubular boron cluster (MnB{sub 16}{sup −}), which is characterized by photoelectron spectroscopy and ab initio calculations. The relatively simple pattern of the photoelectron spectrum indicates the cluster to be highly symmetric. Ab initio calculations show that MnB{sub 16}{sup −} has a Mn-centered tubular structure with C{sub 4v} symmetry due to first-order Jahn-Teller effect, while neutral MnB{sub 16} reduces to C{sub 2v} symmetry due to second-order Jahn-Teller effect. In MnB{sub 16}{sup −}, two unpaired electrons are observed, one on the Mn 3d{sub z{sup 2}} orbital and another on the B{sub 16} tube, making it an unusual biradical. Strong covalent bonding is found between the Mn 3d orbitals and the B{sub 16} tube, which helps to stabilize the tubular structure. The current result suggests that there may exist a whole class of metal-stabilized tubular boron clusters. These metal-doped boron clusters provide a new bonding modality for transition metals, as well as a new avenue to design boron-based nanomaterials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Anomalous thermal conductivity of monolayer boron nitride

In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Two-dimensional boron: Lightest catalyst for hydrogen and oxygen evolution reaction

The hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) have been envisaged on a two-dimensional (2D) boron sheet through electronic structure calculations based on a density functional theory framework. To date, boron sheets are the lightest 2D material and, therefore, exploring the catalytic activity of such a monolayer system would be quite intuitive both from fundamental and application perspectives. We have functionalized the boron sheet (BS) with different elemental dopants like carbon, nitrogen, phosphorous, sulphur, and lithium and determined the adsorption energy for each case while hydrogen and oxygen are on top of the doping site of the boron sheet. The free energy calculated from the individual adsorption energy for each functionalized BS subsequently guides us to predict which case of functionalization serves better for the HER or the OER.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-pressure phase transition makes B 4.3 C boron carbide a wide-gap semiconductor

Single-crystal B4.3C boron carbide is investigated concerning the pressure-dependence of optical properties and of Raman-active phonons up to ~70 GPa. The high concentration of structural defects determining the electronic properties of boron carbide at ambient conditions initially decrease and finally vanish with pressure increasing. We obtain this immediately from transparency photos, allowing to estimate the pressure-dependent variation of the absorption edge rapidly increasing around 55 GPa. Glass-like transparency at pressures exceeding 60 GPa indicate that the width of the band exceeds ~3.1 eV thus making boron carbide a wide-gap semiconductor. Furthermore, the spectra of Raman–active phonons indicate a pressure-dependent phase transition in single-crystal natB4.3C boron carbide near 35 GPa., particularly related to structural changes in connection with the C-B-C chains, while the basic icosahedral structure remains largely unaffected.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Boron Coordination in Multicomponent Glasses: Analytical Models and Machine Learning With Uncertainty

Borosilicate glasses are extensively used in a variety of applications from kitchenware to nuclear waste immobilization due to the strong network formed by the Si-O-B bond that makes it resistant to chemical corrosion and gives it a low thermal expansion. Boron, however, exists in both trigonal BO3 and tetrahedral BO4 bonds in glass systems, which impacts the chemical durability and thermal resistance of the glass, amongst other properties. Boron coordination (N4), or the ratio of the amount of BO4 to BO3 within a glass, may aid in predicting these properties but is difficult to derive without experimental data due to the complexity of impacts from varied glass compositions and processing factors. For this reason, compositional models have been developed to predict boron coordination, but the models typically include a limited number of glass components. To help fill this gap in the models, in this work, a diverse multicomponent glass dataset of 809 glasses is compiled from a literature search, and then a number of analytical and machine learning (ML) models are trained on the dataset. Previously developed modified Bernstein and modified Du Stebbins analytical models were fitted to update parameters with the new dataset. Then, partially Bayesian neural networks, Gaussian process regressor, and heteroskedastic deterministic neural networks were evaluated. The ML models examined all have different strategies to overcome the potential for overfitting as a result of a limited training dataset, and return results that account for model uncertainty, which can be valuable for understanding model reliability. For the first time, cooling rate is introduced as an input parameter for ML models, showing consistent improvements in performance and solidifying the importance of including parameters outside of composition alone for N4 prediction. The machine learning models examined here show promise in accurate predictions of boron coordination in borosilicate glasses, all achieving R2 values of 0.91.

boron coordination↗
DOE OSTI2014

High density and taper-free boron doped Si{sub 1−x}Ge{sub x} nanowire via two-step growth process

The authors study Au catalyzed chemical vapor growth of Si{sub 1−x}Ge{sub x} alloyed nanowires in the presence of diborane, serving as a dopant precursor. Our experiments reveal that introduction of diborane has a significant effect on doping and morphology. Boron exposure poisons the Au catalyst surface, suppresses catalyst activity, and causes significantly tapered wires, as a result of conformal growth. The authors develop here a two-step method to obtain high density and taper-free boron doped Si{sub 1−x}Ge{sub x} alloy nanowires. The two-step process consists of: (1) growth of a small undoped Si{sub 1−x}Ge{sub x} section and (2) introduction of diborane to form a boron doped Si{sub 1−x}Ge{sub x} section. The catalyst preparation step remarkably influences wire yield, quality and morphology. The authors show that dopant-ratio influences wire resistivity and morphology. Resistivity for high boron doped Si{sub 1−x}Ge{sub x} nanowire is 6 mΩ-cm. Four probe measurements show that it is possible to dope Si{sub 1−x}Ge{sub x} alloy nanowires with diborane.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Peculiar features of boron distribution in high temperature fracture area of rapidly quenched heat-resistant nickel alloy

This article comprises the results of comprehensive study of the structure and distribution in the high temperature fracture area of rapidly quenched heat-resistant superalloy of grade EP741NP after tensile tests. The structure and boron distribution in the fracture area are studied in detail by means of direct track autoradiography in combination with metallography of macro- and microstructure. A rather extensive region of microcracks generation and intensive boron redistribution is detected in the high temperature fracture area of rapidly quenched nickel superalloy of grade EP741NP. A significant decrease in boron content in the fracture area and formation of elliptically arranged boride precipitates are revealed. The mechanism of intense boron migration and stability violation of the structural and phase state in the fracture area of rapidly quenched heat-resistant nickel superalloy of grade EP741NP is proposed on the basis of accounting for deformation occurring in the fracture area and analysis of the stressed state near a crack.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Annealing kinetics of boron-containing centers in electron-irradiated silicon

The annealing kinetics of B{sub i}O{sub i} pairs created by fast-electron irradiation in Si wafers is studied. The wafers are grown by the Czochralski method and doped with boron to different levels. It is found that, at a particular temperature, the annealing rate steadily increases with increasing boron concentration. The results are described with a simple model that takes into consideration the interaction of interstitial boron atoms with oxygen atoms and substitutional boron atoms. In the context of the model, the temperature dependence of the dissociation rate of the B{sub i}O{sub i} complex is calculated.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Impact of Boron-Containing Lubricant Additive on Three-Way Catalyst Reactivity and Physicochemical Properties

Boron-containing compounds are one of the lubricant additive options due to their suitable properties for additives and have been used as commercial lubricant additives. In the present study, the impact of a boron-containing lubricant oil additive, AR9100 (BR), on Pd/Rh-based three-way catalyst (TWC) performance is investigated, and the results are compared with the baseline no-additive (NA) case and the industry standard zinc dialkyl-dithiophosphate (ZDDP) results. Accelerated engine aging is performed using a genset to expose the catalysts to lubricant additives at high temperatures. All aged TWC samples are investigated for reactivity in a bench-flow reactor and characterized using a variety of analytical techniques. Compared with the no-additive case, the temperatures of 90% conversion (T 90 ) of NO, CO, C 3 H 6 , and C 3 H 8 for the ZDDP-aged TWC sample increased by 34, 30, 37, and 48 °C. However, the T 90 of all gas species for the BR-aged TWC sample are similar to the NA-aged TWC sample. Additionally, a significant decrease in water–gas shift reactivity and oxygen storage capacity is observed in the ZDDP-aged sample, but not in the BR-aged sample. Inductively coupled plasma-optical emission spectrometry (ICP-OES) analysis and electron probe microanalysis (EPMA) maps of accelerated engine aging samples show the presence of phosphorus and boron in ZDDP- and BR-aged TWC samples, respectively. However, no boron-related peaks are observed in the X-ray diffraction (XRD) pattern of the BR-aged TWC sample, which may exist in the form of an amorphous phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRSDate not supplied

Forcespun Polymers as Precursors to Boron Nitride Fibers

The need for multifunctional materials in aerospace technologies is currently driving the development of new novel composite materials. Specifically, insulation materials with high thermal conductivity, high electrical resistivity, and are chemically inert are needed for high voltage power applications. Boron nitride (BN) nanomaterials fit these criteria and can be incorporated into composites for further material design. The synthesis of boron nitride through a polymer derived ceramic route allows for the morphology of the resulting BN to be tailored. This is especially beneficial since the polymers can be shaped or spun into fibers prior to the ceramic conversion. This project utilizes the Forcespinning technique to produce boron-containing polymer fibers that are converted to boron nitride through a heat treatment. The chemical compositions and fiber morphologies were studied and reported here.

Boron nitride, Fibers, Forcespinning↗
DOE OSTI2012

Identification of limiting case between DBA and SBDBA (CL break area sensitivity): A new model for the boron injection system

Atucha-2 is a Siemens-designed PHWR reactor under construction in the Republic of Argentina. Its geometrical complexity and (e.g., oblique Control Rods, Positive Void coefficient) required a developed and validated complex three dimensional (3D) neutron kinetics (NK) coupled thermal hydraulic (TH) model. Reactor shut-down is obtained by oblique CRs and, during accidental conditions, by an emergency shut-down system (JDJ) injecting a highly concentrated boron solution (boron clouds) in the moderator tank, the boron clouds reconstruction is obtained using a CFD (CFX) code calculation. A complete LBLOCA calculation implies the application of the RELAP5-3D{sup C} system code. Within the framework of the third Agreement 'NA-SA - Univ. of Pisa' a new RELAP5-3D control system for the boron injection system was developed and implemented in the validated coupled RELAP5-3D/NESTLE model of the Atucha 2 NPP. The aim of this activity is to find out the limiting case (maximum break area size) for the Peak Cladding Temperature for LOCAs under fixed boundary conditions. (authors)

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2017

Advances in boronization on NSTX-Upgrade

Boronization has been effective in reducing plasma impurities and enabling access to higher density, higher confinement plasmas in many magnetic fusion devices. The National Spherical Torus eXperiment, NSTX, has recently undergone a major upgrade to NSTX-U in order to develop the physics basis for a ST-based Fusion Nuclear Science Facility (FNSF) with capability for double the toroidal field, plasma current, and NBI heating power and increased pulse duration from 1–1.5 s to 5–8 s. A new deuterated tri-methyl boron conditioning system was implemented together with a novel surface analysis diagnostic. We report on the spatial distribution of the boron deposition versus discharge pressure, gas injection and electrode location. The oxygen concentration of the plasma facing surface was measured by in-vacuo XPS and increased both with plasma exposure and with exposure to trace residual gases. Furthermore, this increase correlated with the rise of oxygen emission from the plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Probing the Transformation of Boron Nitride Catalysts under Oxidative Dehydrogenation Conditions

Hexagonal boron nitride (h-BN) and boron nitride nanotubes (BNNTs) were recently reported as highly selective catalysts for the oxidative dehydrogenation (ODH) of alkanes to olefins in the gas phase. Previous studies revealed a substantial increase in surface oxygen content after exposure to ODH conditions (heating to ca. 500 °C under a flow of alkane and oxygen); however, the complexity of these materials has thus far precluded an in-depth understanding of the oxygenated surface species. In this contribution, we combine advanced NMR spectroscopy experiments with scanning electron microscopy (SEM) and soft X-ray absorption spectroscopy (XAS) to characterize the molecular structure of the oxygen functionalized phase that arises on h-BN and BNNTs following catalytic testing for ODH of propane. The pristine BN materials are readily oxidized and hydrolyzed under ODH reaction conditions to yield a phase consisting of three coordinate boron sites with variable numbers of hydroxyl and bridging oxide groups which is denoted B(OH) x O 3-x (where x = 0-3). Evidence for this robust oxide phase revises previous literature hypotheses of hydroxylated BN edges as the active component on h-BN.

03 NATURAL GAS↗
DOE OSTI2014

Strain induced modification in phonon dispersion curves of monolayer boron pnictides

In the frame work of density functional theory, the biaxial strain induced phonon dispersion curves of monolayer boron pnictides (BX, X = N, P, As, and Sb) have been investigated. The electron-ion interactions have been modelled using ultrasoft pseudopotentials while exchange-correlation energies have been approximated by the method of local density approximation in the parameterization of Perdew-Zunger. The longitudinal and transverse acoustic phonon modes of boron pnictide sheets show linear dependency on wave vector k{sup →} while out of plane mode varies as k{sup 2}. The in-plane longitudinal and out of plane transverse optical modes in boron nitride displaying significant dispersion similar to graphene. We have analyzed the biaxial strain dependent behaviour of out of plane acoustic phonon mode which is linked to ripple for four BX sheets using a model equation with shell elasticity theory. The strain induces the hardening of this mode with tendency to become more linear with increase in strain percentage. The strain induced hardening of out of plane acoustic phonon mode indicates the absence of rippling in these compounds. Our band structure calculations for both unstrained and strained 2D h-BX are consistent with previous calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗