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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2021

Analysis and mitigation of parasitic resistance effects for analog in-memory neural network acceleration

To support the increasing demands for efficient deep neural network processing, accelerators based on analog in-memory computation of matrix multiplication have recently gained significant attention for reducing the energy of neural network inference. However, analog processing within memory arrays must contend with the issue of parasitic voltage drops across the metal interconnects, which distort the results of the computation and limit the array size. This work analyzes how parasitic resistance affects the end-to-end inference accuracy of state-of-the-art convolutional neural networks, and comprehensively studies how various design decisions at the device, circuit, architecture, and algorithm levels affect the system's sensitivity to parasitic resistance effects. Here, a set of guidelines are provided for how to design analog accelerator hardware that is intrinsically robust to parasitic resistance, without any explicit compensation or re-training of the network parameters.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Dynamics of voltage-driven oscillating insulator-metal transitions

Recent experiments demonstrated emerging alternating insulator and metal phases in Mott insulators actuated by a direct bias voltage, leading to oscillating voltage outputs with characteristic frequencies. Here, we develop a physics-based nonequilibrium model to describe the dynamics of oscillating insulator-metal phase transitions and experimentally validate it using a VO 2 device as a prototype. The oscillation frequency is shown to scale monotonically with the bias voltage and series resistance and terminate abruptly at lower and upper device-dependent limits, which are dictated by the nonequilibrium carrier dynamics. Here, we derive an approximate analytical expression for the dependence of the frequency on the device operating parameters, which yields a fundamental limit to the frequency and may be utilized to provide guidance to potential applications of insulator-metal transition materials as building blocks of brain-inspired non-von Neumann computers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Can High Current Density HTS Magnets be Quench Protected Using Methods Used to Protect High Current Density LTS Magnets?

In the 1970s the Lawrence Berkeley Laboratory (LBL) was testing high current density magnets where the EJ 2 limit was up to two orders of magnitude higher than the quench protection methods of the period would permit at the time. LBL was designing a high current density (J) thin solenoid with a large volume and stored energy (E). The accepted EJ 2 limit at the time was ~10 23 J A 2 m -4 . In order to exceed the EJ 2 limit by two orders of magnitude, one had to greatly increase the quench protection voltages (V) and magnet current (I). In 1977, LBL tested four quench protection methods on a 2-meter diameter high current density solenoid with a stored energy of 2 MJ. Three of these quench protection methods worked well, but the fourth didn't appear to work. These methods will be discussed as to whether they can be applied to HTS or MgB 2 high current density magnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Raw tensiometer soil matric potential data, from Oct 2017-Jun 2020 in Manaus, Brazil

This data package contains raw output from two Campbell Scientific CR1000 data loggers each connected to three UMS T4e tensiometer sensors in Manaus, Brazil. Tensiometers at each data logger location were installed to depths of 10 cm, 20 cm and 50 cm below the ground surface for the purpose of measuring soil matric potential at each depth. “Station 3” tensiometers were installed at approximately 2°36'31.68"S, 60°12'34.70"W. “Station 4” tensiometers were installed at approximately 2°36'32.46"S, 60°12'34.92"W. The files “tensio3.edit.202109.csv” and “tensio4.edit.202109.csv” contain raw data (with invalid data removed). A text editor will be required to view the raw files in .csv (comma-separated values) format. Data processing was limited to: 1) Editing column headers for clarity; 2) Applying a correction that converts voltage read by the data loggers to pressure units (kPa); 3) removing all data greater than 50 kPa and less than -115 kPa; 4) Adding columns entitled “Caution.10cm”, “Caution.20cm” and “Caution.50cm” that contains values of either “NA” or “Caution”, the latter of which is applied when data exceeds the manufacturer reported data validity range of less than -85 kPa to suggest use of these data with caution; 5) Adding columns entitled “Invalid.10cm”, “Invalid.20cm”, and “Invalid.50cm” that contains values of either “NA” or “Invalid”, the latter of which is applied when data accuracy is deemed compromised due to the introduction of air bubbles into the instrument. Data marked “Invalid” may still indicate general trends of wet/high matric potential and dry/low matric potential, but values are inaccurate and dry/low matric potential values are likely not low enough. Wet/high matric potential values are likely to be more accurate than dry/low matric potential values; 6) Data format changed from .dat to .csv. This research was performed as a part of the NGEE Tropics project, which aims to advance model predictions of tropical forest carbon cycle responses to a changing climate over the 21st Century.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2026

World’s First Vertical GaN based High Power (200 kW) Multi-level Traction Electric Drive Design

Vertical GaN (vGaN) technology leverages a fully conductive 3D semiconductor structure, enabling superior power density compared to GaN-on-Si and other wide bandgap devices. It offers a pathway to surpass cost and efficiency limitations of Si and SiC devices in traction applications. However, scaling for high-voltage, high-power systems remains challenging. This paper presents the design of an 800V, 200kW traction inverter utilizing vertical GaN devices. The inverter achieves ultra-high efficiency (> 99.5%) through advanced power module integration and employs multilevel neutral-point-less X-type (NPL.X) inverter topology to ensure optimal traction drive system performance. These innovations demonstrate the potential of vGaN for next￾generation electric propulsion systems.

Alam, Khorshed [General Motors LLC, Detroit, MI (U↗
DOE OSTI2022

On the Interplay between CT and Singlet Exciton Emission in Organic Solar Cells with Small Driving Force and Its Impact on Voltage Loss

The interplay between free charge carriers, charge transfer (CT) states and singlet excitons (S 1 ) determines the recombination pathway and the resulting open circuit voltage (V OC ) of organic solar cells. By combining a well-aggregated low bandgap polymer with different blend ratios of the fullerenes PCBM and ICBA, the energy of the CT state (E CT ) is varied by 130 meV while leaving the S 1 energy of the polymer (E S 1 ) unaffected. It is found that the polymer exciton dominates the radiative properties of the blend when approaches E CT , while the V OC remains limited by the non-radiative decay of the CT state. It is concluded that an increasing strength of the exciton in the optical spectra of organic solar cells will generally decrease the non-radiative voltage loss because it lowers the radiative V OC limit (V OC,rad ), but not because it is more emissive. The analysis further suggests that electronic coupling between the CT state and the S 1 will not improve the V OC , but rather reduce the V OC,rad . It is anticipated that only at very low CT state absorption combined with a fairly high CT radiative efficiency the solar cell benefit from the radiative properties of the singlet excitons.

14 SOLAR ENERGY↗
DOE OSTI2025

Small-Signal Stability of Grid-Forming Inverters Using Current-Limiting and Frequency Stabilization

This paper presents a small-signal stability analysis of grid-forming (GFM) inverters under current-limiting conditions. It examines how adjustments in virtual impedance angles, implemented through advanced current-limiting and frequency stabilization techniques, influence small-signal stability. This paper studies a GFM inverter control integrating a fictitious power technique stabilizing primary control by adding a virtual power term and a hybrid current limiter integrating virtual impedance in the anti-wind-up feedback with current reference saturation limiting. A small-signal model is developed to assess the impact of virtual impedance angles on GFM inverter dynamics during grid disturbances, such as voltage drops. The findings indicate that although increasing the virtual impedance angle (to make it more inductive) enhances large-signal stability and voltage support during faults, it can induce oscillations and lead to instability if the angle exceeds certain thresholds. Based on the small-signal models, this paper provides design considerations for the current-limiter impedances to ensure reliable GFM inverter behavior under grid disturbances while maintaining small-signal stability.

current limiting↗
DOE OSTI2024

Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning

Reliability issues stemming from device level nonidealities of nonvolatile emerging technologies like ferroelectric field-effect transistors (FeFETs), especially at scaled dimensions, cause substantial degradation in the accuracy of in-memory crossbar-based AI systems. Here, in this work, we present a variation-aware design technique to characterize the device level variations and to mitigate their impact on hardware accuracy employing a Bayesian neural network (BNN) approach. An effective conductance variation model is derived from the experimental measurements of cycle-to-cycle (C2C) and device-to-device (D2D) variations performed on FeFET devices fabricated using 28 nm high-k metal gate technology. The variations were found to be a function of different conductance states within the given programming range, which sharply contrasts earlier efforts where a fixed variation dispersion was considered for all conductance values. Such variation characteristics formulated for three different device sizes at different read voltages were provided as prior variation information to the BNN to yield a more exact and reliable inference. Near-ideal accuracy for shallow networks (MLP5 and LeNet models) on the MNIST dataset and limited accuracy decline by ~3.8%–16.1% for deeper AlexNet models on CIFAR10 dataset under a wide range of variations corresponding to different device sizes and read voltages, demonstrates the efficacy of our proposed device-algorithm co-design technique.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite–Brownmillerite Transformation in Electrolyte-Gated Ultrathin La 0.5 Sr 0.5 CoO 3−δ

Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La 0.5 Sr 0.5 CoO 3-δ films. Further, gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >10 5 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Scalable membrane-less microbial electrolysis cell with multiple compact electrode assemblies for high performance hydrogen production

Bioelectrochemical hydrogen production via microbial electrolysis cells (MECs) is a promising method for sustainable energy production and decarbonization of energy systems. However, the application of MECs is limited by the electrochemical performance, scalability, and the cost associated with expensive materials. Here, in this study, a scalable MEC (500 mL) with novel compact electrode assemblies and high electrode surface area to volume ratio (160 m 2 /m 3 ) was designed and constructed. The use of membranes, precious metal catalyst, and current collectors with high costs was avoided. A high current density at the steady state of 49.5 ± 5.3 A/m 2 was achieved using acetate as the substrate with phosphate buffer under the applied voltage of 1.01 V. The corresponding volumetric current density was 3948 ± 422 A/m 3 . The compact electrode assembly design limited methane production rate to 3.9 ± 0.2 L/L/D, while achieving a hydrogen production rate of 33.7 ± 1.7 L/L/D. With the suppression of microbial hydrogen consumption, the hydrogen production rate was 39.8 ± 1.9 L/L/D, higher by almost one order of magnitude than those of MECs with scaling up attempts. The compact electrode configuration reduced internal resistance to 88.5 ± 4.4 Ω cm 2 . The energy efficiency based on input electricity was 146 ± 7 % to 189 ± 9 % within the applied voltage range of 0.71 to 1.05 V. The results in this study demonstrated successful scaling up of high performance small MECs and offered a new possible approach of scaling up MECs by stacking high-performance subunits, with no trade-offs on electrochemical performance.

08 HYDROGEN↗
DOE OSTI2020

High-Voltage Phosphate Cathodes for Rechargeable Ca-Ion Batteries

Calcium-ion batteries (CIBs) are under investigation as next-generation energy storage devices due to their theoretically high operating potentials and lower costs tied to the high natural abundance of calcium. However, the development of CIBs has been limited by the lack of available positive electrode materials. In this study, for the first time, we report two functional polyanionic phosphate materials as high-voltage cathodes for CIBs at room temperature. NaV 2 (PO 4 ) 3 electrodes were found to reversibly intercalate 0.6 mol of Ca 2+ (81 mA h g –1 ) near 3.2 V (vs Ca 2+ /Ca) with stable cycling performance at a current density of 3.5 mA g –1 . The olivine framework material FePO 4 reversibly intercalates 0.2 mol of Ca 2+ (72 mA h g –1 ) near 2.9 V (vs Ca 2+ /Ca) at a current density of 7.5 mA g –1 in the first cycle. Structural, electronic, and compositional changes are consistent with reversible Ca 2+ intercalation into these two materials.

25 ENERGY STORAGE↗
DOE OSTI2022

Impedance matched superconducting nanowire photodetector for single- and multi-photon detection

Conventional readout of a superconducting nanowire single-photon detector (SNSPD) sets an upper bound on the output voltage to be the product of the bias current and the load impedance, IB×Zload, where Zload is limited to 50Ω in standard RF electronics. This limit is broken/exceeded by interfacing the 50Ω load and the SNSPD using an integrated superconducting transmission line taper. The taper is a transformer that effectively loads the SNSPD with high impedance without latching. The taper increases the amplitude of the detector output while preserving the fast rising edge. Using a taper with a starting width of 500 nm, a 3.6× higher pulse amplitude, 3.7× faster slew rate, and 25.1 ps smaller timing jitter was observed. The taper also makes the detector's output voltage sensitive to the number of photon-induced hotspots and enables photon number resolution.

Zhu, Di↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗
DOE OSTI2025

Fluorinated polythiophenes with ester side chains for boosting the V OC and efficiency in non-fullerene polymer solar cells

As the power conversion efficiency (PCE) of organic photovoltaics (OPVs) approximates the 19 % threshold, wide bandgap (WBG) polythiophenes (PTs) have gained increasing attention due to their simple chemical structures and ease of synthesis, making them promising candidates for large-scale production. However, the benchmark polymer poly(3-hexylthiophene) (P3HT) is limited by its high-lying HOMO energy level, which restricts the open-circuit voltage (V OC ) in solar cells. Here, in this study, we introduce a novel series of PT derivatives (PDC8-T, PDC8-3T, PDC16-3T, and PDC16-3T-2F) featuring ester side chains designed to fine-tune electronic properties through a streamlined three-step synthesis. Additionally, we incorporated a π-spacer to reduce steric hindrance and elongated alkyl side chains to improve solubility and processability. Compared to P3HT, these PT derivatives demonstrate a significant reduction in HOMO energy levels, lowering by approximately 0.3–0.4 eV. Among them, PDC16-3T-2F—with fluorine atom substitution—achieves the lowest HOMO energy level, induces a coplanar molecular conformation, and enhances polymer aggregation behavior. We evaluated these PT derivatives in inverted non-fullerene bulk-heterojunction (NFA BHJ) OPVs. The PDC8-3T device showed a relatively low PCE of 0.69 %, with a V OC of 0.76 V, a short-circuit current density (J SC ) of 3.32 mA/cm 2 , and a fill factor (FF) of 27.3 %. In contrast, the PDC16-3T-2F device achieved an impressive PCE of 7.21 %, with a V OC of 0.85 V, a J SC of 14.60 mA/cm 2 , and an FF of 58.4 %. This remarkable improvement is attributed to the fluorine substitution, which not only enhances molecular orientation but also downshifts the HOMO energy level and further boosts the V OC . Hence, these molecular design strategies have led to a fibrillar bicontinuous interpenetrating network with optimal nanoscale phase separation within the active layer.

14 SOLAR ENERGY↗
DOE OSTI2024

Collisional space-charge-limited current with monoenergetic velocity: From Child–Langmuir to Mott–Gurney

All theories coupling electron emission theories ultimately approach the space-charge-limited current (SCLC) in vacuum, given by the Child–Langmuir (CL) law, for sufficiently high voltage, or the Mott–Gurney (MG) law for finite electron mobility and high (but not infinite) voltage. These analyses demonstrate the presence of an SCLC regime that cannot be described by either CL or MG. Here, we derive an exact solution for SCLC for general electron mobility and nonzero velocity. We recover the traditional CL with nonzero initial velocity at high voltage. For low mobility (or infinite collision frequency), we derive corrections to the MG law that depend on the ratio of initial velocity to the product of collision frequency and gap distance or initial velocity to drift velocity for low and high voltage, respectively. Increasing collisionality decreases the correction to SCLC for nonzero velocity, indicating that these corrections are less important for low-mobility materials (e.g., solids) than high-mobility materials (e.g., air or vacuum). For a given gap distance (collision frequency), increasing the collision frequency (gap distance) increases the voltage necessary to make the gap appear more like vacuum. These results provide a generalized SCLC for both collisionality and initial velocity when assessing the transitions between electron emission mechanisms.

Physics↗