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At least 379 records · Page 21

Electrolytes for Use in High Energy Lithium-Ion Batteries with Wide Operating Temperature Range

Objectives of this work are: (1) Develop advanced Li -ion electrolytes that enable cell operation over a wide temperature range (i.e., -30 to +60C). (2) Improve the high temperature stability and lifetime characteristics of wide operating temperature electrolytes. (3) Improve the high voltage stability of these candidate electrolytes systems to enable operation up to 5V with high specific energy cathode materials. (4) Define the performance limitations at low and high temperature extremes, as well as, life limiting processes. (5) Demonstrate the performance of advanced electrolytes in large capacity prototype cells.

voltage stability↗

Igniter heater EMI transient test

Testing to evaluate Redesigned Solid Rocket Motor igniter heater electromagnetic interference (EMI) effects on the Safe and Arm (S and A) device was completed. It was suspected that EMI generated by the igniter heater and it's associated electromechanical relay could cause a premature firing of the NASA Standard Initiators (NSIs) inside the S and A. The maximum voltage induced into the NSI fire lines was 1/4 of the NASA specified no-fire limit of one volt (SKB 26100066). As a result, the igniter heaters are not expected to have any adverse EMI effects on the NSIs. The results did show, however, that power switching causes occasional high transients within the igniter heater power cable. These transients could affect the sensitive equipment inside the forward skirt. It is therefore recommended that the electromechanical igniter heater relays be replaced with zero crossing solid state relays. If the solid state relays are installed, it is also recommended that they be tested for EMI transient effects.

Cook, M.↗

RHETT2/EPDM Hall Thruster Propulsion System Electromagnetic Compatibility Evaluation

Electromagnetic compatibility measurements were obtained as part of the Electric Propulsion Demonstration Module (EPDM) flight qualification program. Tests were conducted on a Hall thruster system operating at a nominal 66O W discharge power. Measurements of conducted and radiated susceptibility and emissions were obtained and referenced to MEL-STD-461 C. The power processor showed some conducted susceptibility below 4 kHz for the magnet current and discharge voltage. Radiated susceptibility testing yielded a null result. Conducted emissions showed slight violations of the specified limit for MIL-461C CE03. Radiated emissions exceeded the RE02 standard at low frequencies, below 300 MHz, by up to 40 dB RV/m/MHz.

Sarmiento, Charles J.↗

Solar Arrays for Direct-Drive Electric Propulsion: Arcing at High Voltages

The results from an experimental investigation to assess arcing during operation of high voltage solar arrays in a plasma environment are presented. The experiments were part of an effort to develop systems that would allow safe operation of Hall-Effect Thrustefls) in direct-drive mode. Arc discharges are generated when the array is biased negative with respect to the plasma. If sustained for long periods of time between adjacent solar cells, arcs may severely damage a solar array, thus significantly shortening its lifetime. Most often sustained arcs are triggered by plasma produced during short-duration discharge arcs (approximately 20 microseconds). These trigger arcs are sparked between the semiconducting cell and the covering dielectric. Both trigger and sustained (greater than 1 millisecond) arcs have been captured during the tests. Current and voltage waveforms associated with the different arc events are presented. The test results have defined operational limits (thresholds) for the various array concepts studied that minimize the likelihood of damage from sustained arcs. Experimental trends regarding the effect of the solar array substrate on arc duration are also presented.

Schneider, Todd A.↗

Efficient Computational Model of Hysteresis

A recently developed mathematical model of the output (displacement) versus the input (applied voltage) of a piezoelectric transducer accounts for hysteresis. For the sake of computational speed, the model is kept simple by neglecting the dynamic behavior of the transducer. Hence, the model applies to static and quasistatic displacements only. A piezoelectric transducer of the type to which the model applies is used as an actuator in a computer-based control system to effect fine position adjustments. Because the response time of the rest of such a system is usually much greater than that of a piezoelectric transducer, the model remains an acceptably close approximation for the purpose of control computations, even though the dynamics are neglected. The model (see Figure 1) represents an electrically parallel, mechanically series combination of backlash elements, each having a unique deadband width and output gain. The zeroth element in the parallel combination has zero deadband width and, hence, represents a linear component of the input/output relationship. The other elements, which have nonzero deadband widths, are used to model the nonlinear components of the hysteresis loop. The deadband widths and output gains of the elements are computed from experimental displacement-versus-voltage data. The hysteresis curve calculated by use of this model is piecewise linear beyond deadband limits.

Shields, Joel↗

Foldback current-limiting for hybrid regulator

Technique utilizes operational high gain amplifier, which greatly reduces temperature sensitivity of short circuit current, to amplify and subtract voltage across current sensing resistor from regulated output voltage. Small current sensing resistor may be used to eliminate power loss problem found in conventional circuits.

Crider, C. H.↗

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Teverovsky, Alexander↗

Electrostatic testing of thin plastic materials

Ten thin plastic materials (Velostat, RCAS 1200, Llumalloy, Herculite 80, RCAS 2400, Wrightlon 7000, PVC, Aclar 22A, Mylar, and Polyethylene) were tested for electrostatic properties by four different devices: (1) The static decay meter, (2) the manual triboelectric testing device, (3) the robotic triboelectric testing device, and (4) the resistivity measurement adapter device. The static decay meter measured the electrostatic decay rates in accordance with the Federal Test Method Standard 101B, Method 4046. The manual and the robotic triboelectric devices measured the triboelectric generated peak voltages and the five-second decay voltages in accordance with the criteria for acceptance standards at Kennedy Space Center. The resistivity measurement adapter measured the surface resistivity of each material. An analysis was made to correlate the data among the four testing devices. For the material tested the pass/fail results were compared for the 4046 method and the triboelectric testing devices. For the limited number of materials tested, the relationship between decay rate and surface resistivity was investigated as well as the relationship between triboelectric peak voltage and surface resistivity.

Skinner, S. Ballou↗

Integrated Power Source Grant

Traditional spacecraft power systems incorporate a solar array energy source, an energy storage element (battery), and battery charge control and bus voltage regulation electronics to provide continuous electrical power for spacecraft systems and instruments. Dedicated power conditioning components provide limited fault isolation between systems and instruments, while a centralized power-switching unit provides spacecraft load control. Battery undervoltage conditions are detected by the spacecraft processor, which removes fault conditions and non-critical loads before permanent battery damage can occur. Cost effective operation of a micro-sat constellation requires a fault tolerant spacecraft architecture that minimizes on-orbit operational costs by permitting autonomous reconfiguration in response to unexpected fault conditions. A new micro-sat power system architecture that enhances spacecraft fault tolerance and improves power system survivability by continuously managing the battery charge and discharge processes on a cell-by-cell basis has been developed. This architecture is based on the Integrated Power Source (US patent 5644207), which integrates dual junction solar cells, Lithium Ion battery cells, and processor based charge control electronics into a structural panel that can be deployed or used to form a portion of the outer shell of a micro-spacecraft. The first generation Integrated Power Source is configured as a one inch thick panel in which prismatic Lithium Ion battery cells are arranged in a 3x7 matrix (26VDC) and a 3x1 matrix (3.7VDC) to provide the required output voltages and load currents. A multi-layer structure holds the battery cells, as well as the thermal insulators that are necessary to protect the Lithium Ion battery cells from the extreme temperatures of the solar cell layer. Independent thermal radiators, located on the back of the panel, are dedicated to the solar cell array, the electronics, and the battery cell array. In deployed panel applications, these radiators maintain the battery cells in an appropriate operational temperature range.

Source record↗

Low level signal limiter

A limiting circuit is described which prevents a signal being supplied to a signal amplifier from exceeding a predetermined value. The circuit is designed to permit a signal voltage to be fed directly to a signal amplifier without passing through the operational amplifier and without being altered undesirably. When the signal level increases to the predetermined value, the summing point shifts from the input of the operational amplifier to the output of the limiting circuit.

Hansen, I. G.↗

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

SEU from heavy-ions is measured for SOI PowerPC microprocessors. Results for 0.13 micron PowerPC with 1.1V core voltages increases over 1.3V versions. This suggests that improvement in SEU for scaled devices may be reversed. In recent years there has been interest in the possible use of unhardened commercial microprocessors in space because of their superior performance compared to hardened processors. However, unhardened devices are susceptible to upset from radiation space. More information is needed on how they respond to radiation before they can be used in space. Only a limited number of advanced microprocessors have been subjected to radiation tests, which are designed with lower clock frequencies and higher internal core voltage voltages than recent devices [1-6]. However the trend for commercial Silicon-on-insulator (SOI) microprocessors is to reduce feature size and internal core voltage and increase the clock frequency. Commercial microprocessors with the PowerPC architecture are now available that use partially depleted SOI processes with feature size of 90 nm and internal core voltage as low as 1.0 V and clock frequency in the GHz range. Previously, we reported SEU measurements for SOI commercial PowerPCs with feature size of 0.18 and 0.13 m [7, 8]. The results showed an order of magnitude reduction in saturated cross section compared to CMOS bulk counterparts. This paper examines SEUs in advanced commercial SOI microprocessors, focusing on SEU sensitivity of D-Cache and hangs with feature size and internal core voltage. Results are presented for the Motorola SOI processor with feature sizes of 0.13 microns and internal core voltages of 1.3 and 1.1 V. These results are compared with results for the Motorola SOI processors with feature size of 0.18 microns and internal core voltage of 1.6 and 1.3 V.

Irom, Farokh↗

Secondary electron effects on spacecraft charging

Calculations were conducted to determine the effects of electron-produced secondary electrons on the net charging current and the equilibrium voltage of spacecraft surfaces immersed in hot (keV) plasmas. The effects of secondary electrons produced by the primary plasma electrons were examined for aluminum, Teflon, Mylar, and Kapton. The results indicate that it is the primary electron energy region over which the secondary electrons are emitted (rather than the ratio of secondary to primary electrons) which determines the effectiveness of the secondary electrons in limiting the net charging current. While the electron-produced secondary electrons decreased the charging current, they had little effect upon the equilibrium voltages attained.

Haffner, J. W.↗

TOPEX/Poseidon battery performance

The following observations were made during the first occultation period: (1) C/D ratios tend to be higher during the initial and final segment of the occultation period; (2) the net overcharge parameter is useful in assessing C/D's; (3) small peak power cusps were present during the initial and final segment of the occultation period--no cusps during the remaining period; (4) small differential voltages (less than 12 mV) were recorded; and (5) the peak charge current was within the recommended limits. In summary, the batteries are operating within recommended limits, and their performance is excellent.

Deligiannis, Frank↗

Single Pixel Characterization of X-Ray TES Microcalorimeter Under AC Bias at MHz Frequencies

In this paper we present the progress made at SRON in the read-out of GSFC x-ray transition-edge sensor (TES) micro-calorimeters in the frequency domain. The experiments reported so far, whose aim was to demonstrate an energy resolution of 2eV at 6 keV with a TES acting as a modulator, were carried out at frequencies below 700 kHz using a standard flux locked loop (FLL) SQUID read-out scheme. The TES read-out suffered from the use of sub-optimal circuit components, large parasitic inductances, low quality factor resonators and poor magnetic field shielding. We have developed a novel experimental set-up, which allows us to test several read-out schemes in a single cryogenic run. In this set-up, the TES pixels are coupled via superconducting transformers to 18 high-Q lithographic LC filters with resonant frequencies ranging between 2 and 5 MHz. The signal is amplified by a two-stage SQUID current sensor and baseband feedback is used to overcome the limited SQUID dynamic range. We study the single pixel performance as a function of TES bias frequency, voltage and perpendicular magnetic field.

Gottardi, L.↗

Post-test Inspection of NASA’s Evolutionary Xenon Thruster Long-Duration Test Hardware: Discharge Chamber

The NEXT Long-Duration Test is part of a comprehensive thruster service life assessment intended to demonstrate overall throughput capability, validate service life models, quantify wear rates as a function of time and operating condition, and identify any unknown life-limiting mechanisms. The test was voluntarily terminated in February 2014after demonstrating 51,184 hours of high-voltage operation, 918 kg of propellant throughput, and 35.5 MN-s of total impulse. The post-test inspection of the thruster hardware began shortly afterwards with a combination of non-destructive and destructive analysis techniques, and is presently nearing completion. This paper presents relevant results of the post-test inspection for the discharge chamber as well as other miscellaneous components such as the high-voltage propellant isolators and electrical cabling. Comparison of magnetic field measurements taken during pretest and post-test inspections indicate that the field strength did not degrade, consistent with performance data obtained during the test. Inspection of discharge chamber mesh samples show a deposition coating primarily composed of grid material that is approximately 15 μm in thickness. This thickness is well within the retention capability of the mesh and is therefore not expected to present any issues. Approximately 3.1 grams of deposition flakes were found at the bottom of the discharge chamber, composed primarily of grid material and carbon. Calculated size histograms of these flakes indicate that 99% have a maximum dimension of 200 μm or smaller, which is significantly less than the ion optics grid gap. Larger flakes that are capable of causing a grid-to-grid short will be analyzed to determine if their formation will occur in flight or is a facility effect. The high-voltage propellant isolators as well as numerous other electrical insulators were inspected and no evidence of arcing or any other issues were found.

Rohit Shastry↗

Analysis of Advanced Thermoelectric Materials and Their Functional Limits

The world's demand for energy is increasing dramatically, but the best energy conversion systems operate at approximately 30% efficiency. One way to decrease energy loss is in the recovery of waste heat using thermoelectric (TE) generators. A TE generator is device that generates electricity by exploiting heat flow across a thermal gradient. The efficiency of a TE material for power generation and cooling is determined by the dimensionless Figure of Merit (ZT): ZT = S(exp. 2)sigmaT/κ: where S is the Seebeck coefficient, sigma is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity. The parameters are not physically independent, but intrinsically coupled since they are a function of the transport properties of electrons. Traditional research on TE materials has focused on synthesizing bulk semiconductor-type materials that have low thermal conductivity and high electrical conductivity affording ZT values of 1. The optimization of the σ/κ ratio is difficult to achieve using current material formats, as these material constants are complementary. Recent areas of research are focusing on using nanostructural artifacts that introduce specific dislocations and boundary conditions that scatter the phonons. This disrupts the physical link between thermal (phonon) and electrical (electron) transport. The result is that κ is decreased without decreasing σ. These material formats give ZT values of up to 2 which represent approximately 18% energy gain from waste heat recovery. The next challenge in developing the next generation of TE materials with superior performance is to tailor the interconnected thermoelectric physical parameters of the material system. In order to approach this problem, the fundamental physics of each parameter S, sigma, and κ need to be physically understood in their context of electron/phonon interaction for the construction of new high ZT thermoelectric devices. Is it possible to overcome the physical limit imposed by of the effect of phonon lattice oscillation and energetic electrons towards thermal conductivity? Is the Seebeck coefficient, based on the difference in voltage over temperature gradient ( deltaV/deltaT), an intrinsic parameter of each material? All these parameters were manipulated using nano-bridge and twin-lattice structural concepts at the NASA Langley Research Center. This talk will review the current trend of TE research to optimize the ZT and discuss about new approaches on increasing ZT within functional limits of each parameter.

Kim, Hyun Jung↗

Circuit protects regulated power supply against overload current

Sensing circuit in which a tunnel diode controls a series regulator transistor protects a low voltage transistorized dc regulator from damage by excessive load currents. When a fault occurs, the faulty circuit is limited to a preset percentage of the current when limiting first occurs.

Airth, H. B.↗

Induction motor control system with voltage controlled oscillator circuit

A voltage controlled oscillator circuit is reported in which there are employed first and second differential amplifiers. The first differential amplifier, being employed as an integrator, develops equal and opposite slopes proportional to an input voltage, and the second differential amplifier functions as a comparator to detect equal amplitude positive and negative selected limits and provides switching signals which gate a transistor switch. The integrating differential amplifier is switched between charging and discharging modes to provide an output of the first differential amplifier which upon the application of wave shaping provides a substantially sinusoidal output signal. A two phased version with a second integrator provides a second 90 deg phase shifted output for induction motor control.

Nola, F. J.↗