Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “voltage and current controllers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Evaluation of Power Electronic Components and Systems at Cryogenic Temperatures For Space Missions

Power electronic circuits and systems designed for deep space applications and outer planetary exploration are required to operate reliably and efficiently under extreme temperature conditions. This requirement is dictated by the fact that the operational environments associated with some of the space missions would encompass temperatures as low as -183 C. The development and utilization of electronics capable of low temperature operation would not only fulfill the advanced technology requirements, but also would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. These benefits are generally achieved by the improved intrinsic properties of some of the electronic materials at low temperature, reduced device losses, and the elimination of heating elements used in conventional systems at low temperatures. Power electronic circuits are widely used in space power systems in the areas of power management, conditioning, and control. In this work, the performance of certain power electronic components and systems was investigated under low temperature. These include inductors, capacitors, pulse-width-modulation (PWM) controllers, and advanced commercial DC/DC converter modules. Different properties were determined as a function of temperature in the range of 20 C to -140 C, at various current and voltages levels. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Elbuluk, Malik E.↗
NASA NTRS1995

Controllable Bidirectional dc Power Sources For Large Loads

System redesigned for greater efficiency, durability, and controllability. Modern electronically controlled dc power sources proposed to supply currents to six electromagnets used to position aerodynamic test model in wind tunnel. Six-phase bridge rectifier supplies load with large current at voltage of commanded magnitude and polarity. Current-feedback circuit includes current-limiting feature giving some protection against overload.

Tripp, John S.↗
NASA NTRS2003

80-GHz MMIC HEMT Voltage-Controlled Oscillator

A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz

Samoska, Lorene↗
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
NASA NTRS2009

Prognostic health monitoring in switch-mode power supplies with voltage regulation

The system includes a current injection device in electrical communication with the switch mode power supply. The current injection device is positioned to alter the initial, non-zero load current when activated. A prognostic control is in communication with the current injection device, controlling activation of the current injection device. A frequency detector is positioned to receive an output signal from the switch mode power supply and is able to count cycles in a sinusoidal wave within the output signal. An output device is in communication with the frequency detector. The output device outputs a result of the counted cycles, which are indicative of damage to an a remaining useful life of the switch mode power supply.

Hofmeister, James P↗
NASA NTRS1973

Power processor for a 20CM ion thruster

A power processor breadboard for the JPL 20CM Ion Engine was designed, fabricated, and tested to determine compliance with the electrical specification. The power processor breadboard used the silicon-controlled rectifier (SCR) series resonant inverter as the basic power stage to process all the power to the ion engine. The breadboard power processor was integrated with the JPL 20CM ion engine and complete testing was performed. The integration tests were performed without any silicon-controlled rectifier failure. This demonstrated the ruggedness of the series resonant inverter in protecting the switching elements during arcing in the ion engine. A method of fault clearing the ion engine and returning back to normal operation without elaborate sequencing and timing control logic was evolved. In this method, the main vaporizer was turned off and the discharge current limit was reduced when an overload existed on the screen/accelerator supply. After the high voltage returned to normal, both the main vaporizer and the discharge were returned to normal.

Biess, J. J.↗
NASA NTRS1979

Plasma Interaction Experiment (PIX) flight results

An auxiliary payload package called PIX (plasma interaction experiment) was launched on March 5, 1978, on the LANDSAT 3 launch vehicle to study interactions between the space charged-particle environment and surfaces at high applied positive and negative voltages. Three experimental surfaces were used in this package: a plain disk to act as a control, a disk on a Kapton sheet to determine the effect of surrounding insulation on current collection, and a small solar-array segment to evaluate the effect of distributing biased surfaces among an array of insulators. Only half of the results from the 4 hours of PIX operations were recovered. The results did verify effects found in ground simulation testing. The results of this experiment are discussed in detail.

Grier, N. T.↗
NASA NTRS1979

Area scaling investigations of charging phenomena

The charging and discharging behavior of square, planar samples of silvered, fluorinated ethylene-propylene (FEP) Teflon thermal control tape was measured. The equilibrium voltage profiles scaled with the width of the sample. A wide range of discharge pulse characteristics was observed, and the area dependences of the peak current, charge, and pulse widths are described. The observed scaling of the peak currents with area was weaker than that previously reported. The discharge parameters were observed to depend strongly on the grounding impedance and the beam voltage. Preliminary results suggest that measuring only the return-current-pulse characteristics is not adequate to describe the spacecraft discharging behavior of this material. The seams between strips of tape appear to play a fundamental role in determining the discharging behavior. An approximate propagation velocity for the charge cleanoff was extracted from the data. The samples - 232, 1265, and 5058 square centimeters in area - were exposed at ambient temperature to a 1- to 2-nA/sq cm electron beam at energies of 10, 15, and 20 kilovolts in a 19-meter-long by 4.6-meter-diameter simulation facility at the Lewis Research Center.

Aron, P. R.↗
NASA NTRS1981

Measurement of characteristics of lightning at high altitudes

New development in aeronautical technology -- the use of composite materials, new electronic components, electric flight controls -- have made aircraft potentially more and more vulnerable to the effects of lightning. In-flight tests were conducted to evaluate the current in a bolt of lightning, to measure voltage surge in the onboard circuitry and in certain pieces of equipment, and to document the relationship lightning bolt current and the voltage surge so as to develop a theoretical model and thuds to become acquainted with the significant

Coquelet, M.↗
NASA NTRS1984

T/R switch design for short-range measurements, part 6.1A

The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.

Yu, B.↗
NASA NTRS1985

Experimental performance of a microwave cavity plasma disk ion source

The detailed description and performance characteristics of a microwave ion source are presented. This ion source utilizes an internally tuned, single-mode (or selective multimode) cylindrical cavity applicator to focus and match microwave energy into a disk-shaped discharge zone. The combination of mode focus control and variable, internal cavity matching allows the efficient operation and beam extraction over a wide range of pressures, powers and gaseous inputs. Experimental measurements of ion beam current versus accelerating voltage and input microwave power in xenon and oxygen gas are presented. Ion source specific energy and mass utilization versus experimental variables are also determined. The experimental performance demonstrates the ability of this ion source to extract an ion beam with a well matched, stable, and continuous operation over a wide range of input gases, low pressures, and over input gas flow rates in excess of 100 to a few sccm. Double Langmuir probe measurements in xenon gas indicate high degrees of ionization, and electron and ion concentrations in excess of 100 critical densities in the microwave discharge zone. This ion source has many potential uses such as spacecraft electric propulsion, material ion beam processing, and neutral beam ion sources.

Root, J.↗
NASA NTRS1988

Magnetic emissions testing of the space station engineering model resistojet

The engineering model resistojet intended for altitude maintenance onboard the space station was tested for magnetic radiation emissions in the Radio Frequency Interference (RFI) facility at the Goddard Space Flight Center. The resistojet heater was supplied with power at 20 kHz and low voltage through a power controller. The resistojet was isolated from its power supply in the RFI enclosure, and the magnetic emission measured at three locations around the resistojet at various heater currents. At a heater current of 18.5 A the maximum magnetic emission was 61 dBpt at a distance of 1 m from the resistojet and at a location at the rear of the thruster. Calculations indicate that the case and heat shields provided a minimum of 4 dB of attenuation at a current of 18.5 A. Maximum radiation was measured at the rear of the resistojet along its major axis and was thought to be due to the magnetic radiation from the power leads. At a distance of 37 cm from the resistojet the maximum magnetic radiation measured was 73 dBpt at a current of 11.2 A. The power input leads were also a source of magnetic radiation. The engineering model rssistojet requires about 20 dB of additional shielding.

Briehl, Daniel↗
NASA NTRS1987

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Jung, Tae-Won↗
NASA NTRS2004

Automatic Control of Arc Process for Making Carbon Nanotubes

An automatic-control system has been devised for a process in which carbon nanotubes are produced in an arc between a catalyst-filled carbon anode and a graphite cathode. The control system includes a motor-driven screw that adjusts the distance between the electrodes. The system also includes a bridge circuit that puts out a voltage proportional to the difference between (1) the actual value of potential drop across the arc and (2) a reference value between 38 and 40 V (corresponding to a current of about 100 A) at which the yield of carbon nanotubes is maximized. Utilizing the fact that the potential drop across the arc increases with the interelectrode gap, the output of the bridge circuit is fed to a motor-control circuit that causes the motor to move the anode toward or away from the cathode if the actual potential drop is more or less, respectively, than the reference potential. Thus, the system regulates the interelectrode gap to maintain the optimum potential drop. The system also includes circuitry that records the potential drop across the arc and the relative position of the anode holder as function of time.

Scott, Carl D.↗
NASA NTRS1977

Testing of typical spacecraft materials in a simulated substorm environment

The test specimens were spacecraft paints, silvered Teflon, thermal blankets, and solar array segments. The samples, ranging in size from 300 to 1000 sq cm were exposed to monoenergetic electron energies from 2 to 20 keV at a current density of 1 NA/sq cm. The samples generally behaved as capacitors with strong voltage gradient at their edges. The charging characteristics of the silvered Teflon, Kapton, and solar cell covers were controlled by the secondary emission characteristics. Insulators that did not discharge were the spacecraft paints and the quartz fiber cloth thermal blanket sample. All other samples did experience discharges when the surface voltage reached -8 to -16kV. The discharges were photographed. The breakdown voltage for each sample was determined and the average energy lost in the discharge was computed.

Stevens, N. J.↗
NASA NTRS2021

Experimental Data on Open Circuit Voltage Characterization for Li-Ion Batteries

In this article, we present the datasets collected from nine different Li-ion batteries. These datasets contain voltage, current and time measurements during a full charge-discharge cycle of a battery at very low current (that is nearly at �/30 rate). Such low current rate data is suitable for open circuit voltage characterization. The collection of this data was done through the use of an Arbin battery cycler and a thermal chamber was used to control the test temperature. Data were collected over a wide range of temperatures from −25∘C to 50∘C.

Battery management system↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS1971

Precision calibration and reference voltage source for data acquisition systems

Hybrid integrated circuit operational amplifiers, which have inherent characteristics of low quiescent power dissipation and extended operational lifetime with high reliability, are source for digital systems. Amplifiers are coupled to Zener reference diode in current control and buffer configuration.

Source record↗