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At least 379 records · Page 21

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NASA NTRS1987

Evaluation of high-voltage, high-power, solid-state remote power controllers for amps

The Electrical Power Branch at Marshall Space Flight Center has a Power System Development Facility where various power circuit breadboards are tested and evaluated. This project relates to the evaluation of a particular remote power controller (RPC) energizing high power loads. The Facility equipment permits the thorough testing and evaluation of high-voltage, high-power solid-state remote power controllers. The purpose is to evaluate a Type E, 30 Ampere, 200 V dc remote power controller. Three phases of the RPC evaluation are presented. The RPC is evaluated within a low-voltage, low-power circuit to check its operational capability. The RPC is then evaluated while performing switch/circuit breaker functions within a 200 V dc, 30 Ampere power circuit. The final effort of the project relates to the recommended procedures for installing these RPC's into the existing Autonomously Managed Power System (AMPS) breadboard/test facility at MSFC.

Callis, Charles P.↗

NASA NTRS1988

Analysis of pre-flight modulator voltage calibration data for the Voyager plasma science experiment

The Voyager Plasma Science (PLS) modulator calibration (MVM) data analysis was undertaken in order to check the correctness of the fast A/D converter formulas that connect low voltage monitor signals (MV) with digital outputs (DN), to determine the proportionality constants between the actual modulator grid potential (V) and the monitor voltage (MV), and to establish an algorithm to link the digitized readouts (DN) with the actual grid potential (V). The analysis results are surprising in that the derived conversion constants deviate by fairly significant amounts from their nominal values. However, it must be kept in mind that the test results which were used for analysis may be very imprecise. Even if it is assumed that the test result errors are very large, they do no appear to be capable to account for all discrepancies between the theoretical expectations and the results of the analysis. Measurements with the flight spare instrument appear to be the only means of investigating these effects further.

Nastov, Ognen↗

NASA NTRS1988

Test results of high-voltage, high-power, solid-state remote power controllers

This report discusses the results of testing high-voltage, high-power, solid-state remote power controllers (RPC) using RPCs designed and built by John C. Sturman at the Lewis Research Center, Cleveland, Ohio, and utilizing the Autonomously Managed Power Systems (AMPS) breadboard/test facility. These test results are used to determine usefulness of the RPCs for future applications in high-voltage direct-current space power.

Johnson, Yvette Binford↗

NASA NTRS1988

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗

NASA NTRS1988

Design guide: Designing and building high voltage power supplies, volume 1

This report contains an accumulation of publications and analyses aimed at developing guidelines for improving both high voltage and low voltage power supplies for the U.S. Air Force systems command. It is the intent of the report to supply good design and manufacturing techniques for the packaging and the building of high quality, reliable, long-life power supplies. These data are based on the wealth of engineering practices established by design and manufacturing engineers.

William G Dunbar↗

NASA NTRS1989

Deep-level transient spectroscopy of Al(x)Ga(1-x)As/GaAs using nondestructive acousto-electric voltage measurement

The amplitude and the transient time constant of the acoustoelectric voltage were measured as a function of temperature to determine the activation energy of deep levels in Al(x)Ga(1-x)As/GaAs grown by molecular-beam epitaxy. In comparison to other methods based on monitoring the capacitance transient, deep-level transient spectroscopy has several advantages. The technique is nondestructive and highly sensitive, and, because of the dependence of the polarity of the acoustoelectric voltage on the carrier type, it yields information about the charge of the transient carriers and the type of deep traps involved in the release or trapping of these carriers.

Tabib-Azar, Massood↗

NASA NTRS1988

High altitude current-voltage measurement of GaAs/Ge solar cells

Measurements of high-voltage (Voc of 1.2 V) gallium arsenide on germanium tandem junction solar cells at air mass 0.22 showed that the insolation in the red portion of the solar spectrum is insufficient to obtain high fill factor. On the basis of measurements in the LeRC X-25L solar simulator, these cells were believed to be as efficient as 21.68 percent AM0. Solar simulator spectrum errors in the red end allowed the fill factor to be as high as 78.7 percent. When a similar cell's current-voltage characteristic was measured at high altitude in the NASA Lear Jet Facility, a loss of 15 percentage points in fill factor was observed. This decrease was caused by insufficient current in the germanium bottom cell of the tandem stack.

Hart, Russell E., Jr.↗

NASA NTRS1990

High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC

Silicon dioxide films grown under dry and wet oxidation environment on beta-SiC films have been studied. The beta-SiC films had been heteroepitaxially grown on both on-axis and 2-deg off-axis (001) Si substrates. Capacitance-voltage and conductance-voltage characteristics of metal-oxide-semiconductor structures were measured in a frequency range of 10 kHz to 1 MHz. From these measurements, the interface trap density and the effective fixed oxide charge density were observed to be generally lower for off-axis samples.

Tang, S. M.↗

NASA NTRS1990

High-voltage plasma interactions calculations using NASCAP/LEO

This paper reviews four previous simulations (two laboratory and two space-flight) of interactions of a high-voltage spacecraft with a plasma under low-earth orbit conditions, performed using a three-dimensional computer code NASCAP/LEO. Results show that NASCAP/LEO can perform meaningful simulations of high-voltage plasma interactions taking into account three-dimensional effects of geometry, spacecraft motion, and magnetic field. Two new calculations are presented: (1) for current collection by 1-mm pinholes in wires (showing that a pinhole in a wire can collect far more current than a similar pinhole in a flat plate); and (2) current collection by Charge-2 mother vehicle launched in December 1985. It is shown that the Charge-2 calculations predicted successfully ion collection at negative bias, the floating potential of a probe outside or inside the sheath under negative bias conditions, and magnetically limited electron collection under electron beam operation at high altitude.

Mandell, M. J.↗

NASA NTRS1990

Improved high-voltage, high-frequency square-wave generator

This paper describes the design and operation of a prototype high-voltage full-floating high-frequency square-wave generator which is an improved version of the generator developed by Bernius and Chutjian (1989). The present design overcomes possible momentary simultaneous ON states in the MOSFET configuration and is less susceptible to deleterious effects caused by the component aging and replacements with nonidentical parts. The circuit performs well over a wide voltage and frequency range, until a limit is imposed by the operating characteristics of the active MOSFET elements. Circuit diagrams are presented.

Bernius, Mark T.↗

NASA NTRS1991

Switched-Capacitor Voltage Multiplier

Dc-to-dc power converter multiplies input supply potential by factor of nearly 40. Design does not make use of transformers or inductors but effects voltage boost-up by capacitive energy transfer. Circuit primarily made up of banks of capacitors, connected by network of integrated-circuit relays. Converter functionally linear voltage amplifier with fixed gain figure. Bipolar in operation. Output fully floating, and excellent dc isolation between input and output terminals.

Sridharan, Govind↗

NASA NTRS1990

SPEAR-1: An experiment to measure current collection in the ionosphere by high voltage biased conductors

An experiment is described in which a high electrical potential difference, up to 45 kV, was applied between deployed conducting spheres and a sounding rocket in the ionosphere. Measurements were made of the applied voltage and the resulting currents for each of 24 applications of different high potentials. In addition, diagnostic measurements of optical emissions in the vicinity of the spheres, energetic particle flow to the sounding rocket, dc electric field and wave data were made. The ambient plasma and neutral environments were measured by a Langmuir probe and a cold cathode neutral ionization gauge, respectively. The payload is described and examples of the measured current and voltage characteristics are presented. The characteristics of the measured currents are discussed in terms of the diagnostic measurements and the in-situ measurements of the vehicle environment. In general, it was found that the currents observed were at a level typical of magnetically limited currents from the ionospheric plasma for potentials less than 12 kV, and slightly higher for larger potentials. However, due to the failure to expose the plasma contactor, the vehicle sheath modified the sphere sheaths and made comparisons with the analytic models of Langmuir-Blodgett and Parker-Murphy less meaningful. Examples of localized enhancements of ambient gas density resulting from the operation of the attitude control system thrusters (cold nitrogen) were obtained. Current measurements and optical data indicated localized discharges due to enhanced gas density that reduced the vehicle-ionosphere impedance.

Raitt, W. John↗

NASA NTRS1991

Voltages induced on a power distribution line by overhead cloud lightning

Voltages induced by overhead cloud lightning on a 448 m open circuited power distribution line and the corresponding north-south component of the lightning magnetic field were simultaneously measured at the NASA Kennedy Space Center during the summer of 1986. The incident electric field was calculated from the measured magnetic field. The electric field was then used as an input to the computer program, EMPLIN, that calculated the voltages at the two ends of the power line. EMPLIN models the frequency domain field/power coupling theory found, for example, in Ianoz et al. The direction of the source, which is also one of the inputs to EMPLIN, was crudely determined from a three station time delay technique. The authors found reasonably good agreement between calculated and measured waveforms.

Yacoub, Ziad↗

NASA NTRS1990

High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

Frankel, Michael Y.↗

NASA NTRS1991

Quantum correlation between the junction-voltage fluctuation and the photon-number fluctuation in a semiconductor laser

The photon-number fluctuation of the external field from a semiconductor laser - which was reduced to below the standard quantum limit - is shown to be correlated with the measured junction-voltage noise. The spectral density of the sum of the photon-number fluctuation and junction-voltage fluctuation falls below the squeezed photon-number fluctuation. This confirms the theoretical predictions that this correlation, which originates in the dipole interaction between the internal field and electron-hole pairs, extends into the quantum regime.

Richardson, W. H.↗

NASA NTRS1991

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗

NASA NTRS1992

Generating Multiple Calibrating Voltages Simultaneously

Calibrating unit containing signal generator controlled by microprocessor puts out ac signals of known voltages on fifty channels simultaneously. Signals used to calibrate high-frequency tape recorder channels for multiple, ac-coupled strain gauges simultaneously. Calibrating voltage required on each tape channel determined by remote computer, and corresponding data and commands transmitted to microprocessor via modems.

Dutreix, Lionel J.↗

NASA NTRS1992

The arcing rate for a High Voltage Solar Array - Theory, experiment and predictions

All solar arrays have biased surfaces which can be exposed to the space environment. It has been observed that when the array bias is less than a few hundred volts negative then the exposed conductive surfaces may undergo arcing in the space plasma. A theory for arcing is developed on these high voltage solar arrays which ascribes the arcing to electric field runaway at the interface of the plasma, conductor and solar cell dielectric. Experiments were conducted in the laboratory for the High Voltage Solar Array (HVSA) experiment which will fly on the Japanese Space Flyer Unit (SFU) in 1994. The theory was compared in detail to the experiment and shown to give a reasonable explanation for the data. The combined theory and ground experiments were then used to develop predictions for the SFU flight.

Hastings, Daniel E.↗