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At least 379 records · Page 21

All sources NASA NTRS DOE OSTI

DOE OSTI2022

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗

NASA NTRS1990

Double layers in contactor plasmas

The concept of using a hollow cathode to establish a low impedance contact between a spacecraft and the ambient plasma continues to gain in popularity, and is often then referred to as a plasma contactor. A growing number of studies indicate that large contact currents can be supported with small potential difference between the contactor and the ambient plasma. Results will be presented from a simple one-dimensional spherical model that obtains potentials from the solution of Poisson's equation, and particle densities from a turning point formalism that includes particle angular momentum. The neglect of collisions and magnetic field limits the realism. However, the results illustrate the effect of double layers that can form at the interface between contactor and ambient plasmas, when there is any voltage differential between the contactor and the ambient. The I-V characteristic of this model shows the usual space charge depends upon collection when the contactor flux is lower than some threshold; independence of I from variation in V when the flux is slightly greater than that threshold, and (numerical ?) instability for excessive flux suggesting the possibility of negative resistance. Even if a real I-V characteristic does not exhibit negative resistance, flat spots or high resistance regions may still be troublesome (or useful) to the total circuit.

Cooke, David L.↗

NASA NTRS1976

Effects of neutron irradiation on the characteristics of a buried channel CCD at 80 degrees Kelvin and 295 degrees Kelvin

Buried channel CCD shift registers were irradiated with 15 MeV neutrons. The irradiations were performed at 80 K and 295 K on operating devices with normal clocks and bias voltages applied. Dark current increased from the pre-irradiation value of 7 nA/sq cm to 1,600 nA/sq cm at 1 x 10 to the 13th power n/sq cm. The input gate threshold shift observed at 80K was minus 0.9 volts per 10 to the 13th power n/sq cm, a factor of 4 less than that predicted from a first order calculation of the equivalent ionization dose of neutrons in the oxide. Transfer efficiency measurements yielded a bulk electron trap creation rate for neutron irradiation of 14.0 cm to the minus 1 power at 295 K with a trap emission time constant of 25 microseconds.

Saks, N. S.↗

DOE OSTI2023

Pulse shape measurements for neutron/gamma discrimination using the TOFPET2 ASIC

Many highly pixelated organic scintillator detection systems would benefit from independent readout of each scintillator pixel. Recent advances in Silicon Photomultiplier (SiPM) technology makes this goal feasible, however the data acquisition from potentially hundreds or thousands of channels requires a low-cost and compact solution. For pixelated neutron detection with organic scintillators, the capability to distinguish between neutron and gamma interactions using Pulse Shape Discrimination (PSD) is required along with pulse charge and time of arrival. The TOFPET2 ASIC from PETsys Electronics is a 64-channel readout chip providing pulse time and charge integration measurements from SiPMs, and is specifically designed for time-of-flight positron-emission tomography. Using an 8 × 8 array of 6 mm × 6 mm J-series SiPMs from SensL/OnSemi (ArrayJ-60035-64P-PCB), we have studied the energy and PSD performance of the TOFPET2 ASIC using a 4 × 4 array of 6 mm × 6 mm × 30 mm trans -Stilbene crystals from Inrad Optics and a custom SiPM routing board from PETsys Electronics. In conclusion, using a time-over-threshold method, we measure a maximum PSD figure-of-merit of approximately 1.2 at 478 keV (the Compton edge of 662 keV) for a J-series SiPM operating at an over-voltage of 3V.

47 OTHER INSTRUMENTATION↗

NASA NTRS2002

The Neutral Gas Desorption and Breakdown on a Metal-Dielectric Junction Immersed in a Plasma

New results are presented of an experimental study and theoretical analysis of arcing on metal-dielectric junctions immersed in a low-density plasma. Two samples of conventional solar arrays have been used to investigate the effects of arcing within a wide range of neutral gas pressures, ion currents, and electron number densities. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, intensities of spectral lines, and so on). Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are trip le-junctions, even though some arcs were initiated in gaps between cells. The effect of surface conditioning (decrease of arc rate due to outgassing) was clearly demonstrated. Moreover, a considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. The analysis of optical spectra (240-800 nm) reveals intense narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirm a complicated mechanism of arc plasma generation. The rate of plasma contamination due to arcing was measured by employing a mass-spectrometer. These measurements provided quite reliable data for the development of a theoretical model of plasma contamination, In conclusion, the arc threshold was increased to above 350 V (from 190 V) by keeping a sample in vacuum (20 micronTorr) for seven days. The results obtained are important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high voltage solar arrays for space applications.

Vayner, Boris↗

NASA NTRS2003

Experimental Study of Arcing on High-Voltage Solar Arrays

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism suggests that such modifications can be done in the following directions: 1) To insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); 2) To change a coverglass geometry (overhang); 3) To increase a coverglass thickness; 4) To outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in a large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that stimulates the LEO operational temperature. The experimental setup is described below.

Vayner, Boris↗

NASA NTRS2005

Experimental Study of Arcing on High-voltage Solar Arrays

The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

Vayner, Boris↗

DOE OSTI2025

Detecting Short Circuits: Post Accident Electric Vehicle Battery Safety Check

Fast and accurate detection of soft short circuits (SCs) in the battery packs of damaged electric vehicles is needed by first responders and mechanics to mitigate the potential risk from battery fires that may occur hours, days, or weeks after an accident. Here, this paper presents an SC-detection algorithm for potentially damaged lithium-ion batteries that works quickly and without a priori knowledge of the battery-pack chemistry, capacity, state of charge, or state of health. The proposed universal SC-detection algorithm is designed to be implemented on an inexpensive handheld device that can connect to and monitor the voltages of all cells in a pack. Transient filtering and linear-quadratic state observation provide estimates of normalized SC current for every cell in the pack. Cells with SC-current estimates outside a sigma-based threshold are detected. Simulations, experiments, and electric vehicle (EV) crash data are used to verify the speed, sensitivity, and accuracy of the method, demonstrating 96% accurate detection of 0.0027 C SCs in under 1 h for 5S cell groups in the lab and no false positives for crashed Volkswagen, Chevrolet, and Tesla vehicles without SCs.

25 - ENERGY STORAGE↗

DOE OSTI2023

Current fluctuations and domain depinning in quasi-two-dimensional charge-density-wave 1 T -TaS 2 thin films

We investigated the temperature dependence of the current fluctuations in thin films of the quasi-two-dimensional 1T-TaS 2 van der Waals material. The current fluctuations, determined from the derivative current–voltage characteristics of two-terminal 1T-TaS 2 devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, ED, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The ED value increases with the decreasing 1T-TaS 2 film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that the domain depinning is pronounced in the nearly commensurate phase. It is induced by the electric field but facilitated by local heating. Furthermore, the measured trends for ED of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials.

2D materials↗

DOE OSTI2025

Erosion of high-Z refractory coatings for helicon plasma source window

Proto-MPEX (Materials Plasma Exposure eXperiment), a linear plasma device (LPD), using a high power radio frequency (RF) (⩾100 kW, 13.56 MHz) helicon plasma source, has suffered RF sheath-induced window erosion. The sputtered impurities from the window surface transport toward the downstream target affecting plasma-material interaction studies. The rectified sheath voltage formed was high enough to cause window erosion by light ions due to its low-Z components (e.g. Si 3 N 4 and AlN). Hence, we are proposing impurity mitigation strategies, which involve the application of a Faraday screen to lower the rectified sheath voltage and the application of high-Z refractory coatings on the existing window plasma-facing surface. In this work, we report the erosion of two different coatings, i.e., tantalum oxide (Ta 2 O 5 ) and hafnium oxide (HfO 2 ) on a silicon nitride (Si 3 N 4 ) window material under conditions of low-energy deuterium (D) ion impact, well below the Ta 2 O 5 sputtering energy threshold (i.e. 250 eV). The test samples were RF-biased and exposed to a high D-ion fluence (∼10 26 m −2 ) in Plasma Interaction with Surface Component Experimental Station (PISCES-A) LPD. The experimentally measured sputtering yields of the high-Z refractory coatings below the sputtering energy threshold of Ta 2 O 5 indicate an increased erosion due to the plasma impurities, especially due to oxygen. Improving the vacuum level could reduce the oxygen impurities and increase the lifespan of the coated helicon window for plasma operation. Post-surface analysis indicates no preferential erosion of oxygen or enrichment of the high-Z surface component. This is likely due to an effective energy transfer from the impurity ion for sputtering of the high-Z component in the coating. With the reduced rectified sheath voltage at the window surface and improved vacuum conditions, the proposed high-Z refractory coatings offer a promising solution for reducing window erosion in future MPEX plasma operations at ORNL.

RF bias↗

DOE OSTI2023

Designing an Intrusion Detection for an Adjustable Speed Drive System Controlling a Critical Process

In this article, we address the cyber-security problem of industrial control systems (ICSs) when their sensor measurements may be compromised due to an attacker who has intercepted those measurements via a network. We introduce a general-purpose method “Dynamic Watermarking (DW)” to detect potential cyber-intrusions on speed sensor measurements within industrial control systems, which deploy an adjustable speed drive (ASD) to control a critical process. The DW method is injecting a random private low-amplitude signal with a zero mean Gaussian distribution, “watermark”, into one of the input phase voltages powering the ASD system. The watermark signal propagates through the system including pulse width modulation (PWM) power conversion stage and motor, then ultimately appears in the speed sensor measurements. By deploying two statistical DW tests with two proper thresholds, the system can detect potential cyber-intrusions or unobservable cyber-attacks such as replay attacks and false data injection attacks (FDIA). The DW method tested on a laboratory-scale ASD system experimentally to protect the system against cyber-intrusions. This system, powered by a commercial PWM drive operating at 208 V, 3-phase, and 3.7 kW, served as our experimental platform.

42 ENGINEERING↗

NASA NTRS2006

Experimental Results of Thin-Film Photovoltaic Cells in a Low Density LEO Plasma Environment: Ground Tests

Plasma ground testing results, conducted at the Glenn Research Center (GRC) National Plasma Interaction (N-PI) Facility, are presented for a number of thin-film photovoltaic cells. The cells represent a mix of promising new technologies identified by the Air Force Research Laboratory (AFRL) under the CYGNUS Space Science Technology Experiment (SSTE-4) Program. The current ground tests are aimed at characterizing the performance and survivability of thin film technologies in the harsh low earth orbital space environment where they will be flown. Measurements of parasitic current loss, charging/dielectric breakdown of cover-slide coatings and arcing threshold tests are performed for each individual cell. These measurements are followed by a series of experiments designed to test for catastrophic arc failure mechanisms. A special type of power supply, called a solar array simulator (SAS) with adjustable voltage and current limits on the supply s output, is employed to bias two adjacent cells at a predetermined voltage and current. The bias voltage is incrementally ramped up until a sustained arc results. Sustained arcs are precursors to catastrophic arc failure where the arc current rises to a maximum value for long timescales often ranging between 30 to 100 sec times. Normal arcs by comparison, are short lived events with a timescale between 10 to 30 sec. Sustained arcs lead to pyrolization with extreme cell damage and have been shown to cause the loss of entire array strings in solar arrays. The collected data will be used to evaluate the suitability of thin-film photovoltaic technologies for future space operations.

Galofaro, Joel T.↗

DOE OSTI2025

AI-Enabled Operations at Fermi Complex: Multivariate Time Series Prediction for Outage Prediction and Diagnosis

The Main Control Room of the Fermilab accelerator complex continuously gathers extensive time-series data from thousands of sensors monitoring the beam. However, unplanned events such as trips or voltage fluctuations often result in beam outages, causing operational downtime. This downtime not only consumes operator effort in diagnosing and addressing the issue but also leads to unnecessary energy consumption by idle machines awaiting beam restoration. The current threshold-based alarm system is reactive and faces challenges including frequent false alarms and inconsistent outage-cause labeling. To address these limitations, we propose an AI-enabled framework that leverages predictive analytics and automated labeling. Using data from $2,703$ Linac devices and $80$ operator-labeled outages, we evaluate state-of-the-art deep learning architectures, including recurrent, attention-based, and linear models, for beam outage prediction. Additionally, we assess a Random Forest-based labeling system for providing consistent, confidence-scored outage annotations. Our findings highlight the strengths and weaknesses of these architectures for beam outage prediction and identify critical gaps that must be addressed to fully harness AI for transitioning downtime handling from reactive to predictive, ultimately reducing downtime and improving decision-making in accelerator management.

Jain, Milan [PNL, Richland] (ORCID:000000021676111↗

DOE OSTI2020

Structural Instability in Electrically Stressed, Oxygen Deficient BaTiO 3 Nanocrystals

The dynamics of oxygen vacancies under external stimuli dominates the performance of many solid-state devices, including capacitors, oxide memristors, anionic conductors, etc. By means of in-situ Transmission Electron Microscopy, we found in BaTiO 3 perovskite nanocrystals that formation of oxygen vacancies due to electrical stressing renders the oxide amorphizable under electron beam illumination, suggesting the presence of a threshold concentration of oxygen vacancy affecting the structural stability of BaTiO 3 crystals upon high energy radiation. In contrast to the structural change, the resistivity of the nanocrystal seems not liable to the amorphization prior to dielectric breakdown at higher voltage bias. Here, we propose that an increase in oxygen vacancy content promotes oxygen mobility in the perovskite structure allowing electron beam induced electric field to modify the local structural and composition. Our in-situ observations reveal the central role of oxygen vacancies in the structural stability of perovskites which is of paramount importance to their applications in extreme environments and suggest a potential new route to micro-processing perovskite oxides using the electron beam via oxygen vacancy management without severely compromising the electric property.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Measurement of electrical characteristics of Ge-based diodes with thermal GeO2 films exposed to controlled humidity conditions

We investigated the impact of the interaction between gas-phase water molecules and thermally oxidized GeO2 on Ge on the performance of metal–oxide–semiconductor (MOS) structures. A vacuum-integrated setup was developed to form MOS diodes with a GeO2/Ge structure that had been exposed to controlled humidity conditions and to subsequently measure their electrical characteristics in situ. The capacitance–voltage (C–V) curves exhibited a significant negative shift, indicating the generation of positive charges at the GeO2/Ge interface when the GeO2 surface was exposed to humidity levels above approximately 1%. According to a previous study using electron spectroscopy, this threshold corresponds to the humidity level at which molecular water begins to grow on a GeO2/Ge structure. It is likely that gas-phase water molecules infiltrating the GeO2 film bind to local OH sites via hydrogen bonding, leading to the formation of positive fixed charges at the GeO2/Ge interface.

Sano, Shuto↗

DOE OSTI2026

A Simulator for Neyer Tests of Explosives

Explosives and explosive devices such as detonators are typically tested by applying a range of stimuli such as voltage or mechanical shock, and recording binary “detonated/did not detonate” responses. These are analyzed using maximum likelihood or generalized linear models to provide estimates of quantities such as the all-fire and no-fire points. Given that the true threshold for detonation is unknown a priori , sequential design methods are typically used to optimize the set of test points. One popular method, implemented in commercial software, is Neyer’s algorithm. To support simulation and experimental design, we have developed code in the R programming language to duplicate the functions of the Neyer software. We provide code for the simulator along with a description and examples of usage.

42 ENGINEERING↗

DOE OSTI2023

PV Inverter Testing for Momentary Cessation and Rate-of-Change-of-Frequency Events

To understand the power system stability and develop better electromagnetic transient (EMT) models of field deployed photovoltaic (PV) inverters, it is important to characterize inverters' response to abnormal voltage and frequency scenarios. Because EMT models are not typically available for small distribution-connected PV inverters, and because inerterconnection standards historically did not specify desired ride-through behaviors, we tested two such inverters in the lab to characterize their responses to severe undervoltage events and high rate-of-change-of-frequency (ROCOF) conditions. The inverters tested were pre-IEEE 1547-2018 residential PV inverters widely used in the Hawaiian Electric territory and many other areas. The testing results for undervoltage scenarios showed that the inverter from one vendor exhibited momentary cessation while the inverter from the other vendor did not exhibit momentary cessation behavior or tripping for most of the events below the 120 ms undervoltage trip threshold duration set by IEEE 1547-2003. The testing results for ROCOF scenarios showed that the inverter from one vendor temporarily lost synchronization during ROCOF conditions while the inverter from the other vendor did not lose synchronization or cease generation for any ROCOF conditions. Both the inverters were also tested for EMT-simulated grid events with severe changes in frequency and voltage. The observed responses of the inverters were different from the simulated response of PV inverters represented the best available assumptions from pre-existing information. The results from these experiments can be used to update the inverter models used in bulk power system studies.

aggregates↗

DOE OSTI2023

PV Inverter Testing for Momentary Cessation and Rate-of-Change-of-Frequency Events: Preprint

IEEE 1547 2018↗