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At least 379 records · Page 21

All sources NASA NTRS DOE OSTI

NASA NTRS2011

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

Suckow, Will↗

NASA NTRS2011

Composite Thermal Switch

Lithium primary and lithium ion secondary batteries provide high specific energy and energy density. The use of these batteries also helps to reduce launch weight. Both primary and secondary cells can be packaged as high-rate cells, which can present a threat to crew and equipment in the event of external or internal short circuits. Overheating of the cell interior from high current flows induced by short circuits can result in exothermic reactions in lithium primary cells and fully charged lithium ion secondary cells. Venting of the cell case, ejection of cell components, and fire have been reported in both types of cells, resulting from abuse, cell imperfections, or faulty electronic control design. A switch has been developed that consists of a thin layer of composite material made from nanoscale particles of nickel and Teflon that conducts electrons at room temperature and switches to an insulator at an elevated temperature, thus interrupting current flow to prevent thermal runaway caused by internal short circuits. The material is placed within the cell, as a thin layer incorporated within the anode and/or the cathode, to control excess currents from metal-to-metal or metal-to-carbon shorts that might result from cell crush or a manufacturing defect. The safety of high-rate cells is thus improved, preventing serious injury to personnel and sensitive equipment located near the battery. The use of recently available nanoscale particles of nickel and Teflon permits an improved, homogeneous material with the potential to be fine-tuned to a unique switch temperature, sufficiently below the onset of a catastrophic chemical reaction. The smaller particles also permit the formation of a thinner control film layer (<50 m), which can be incorporated into commercial high-rate lithium primary and secondary cells. The innovation permits incorporation in current lithium and lithium-ion cell designs with a minimal impact on cell weight and volume. The composite thermal switch (CTS(TradeMark)) coating can be incorporated in either the anode or cathode or both. The coating can be applied in a variety of different processes that permits incorporation in the cell and electrode manufacturing processes. The CTS responds quickly and halts current flow in the hottest parts of the cell first. The coating can be applied to metal foil and supplied as a cell component onto which the active electrode materials are coated.

McDonald, Robert↗

NASA NTRS2012

Single-Pole Double-Throw MMIC Switches for a Microwave Radiometer

In order to reduce the effect of gain and noise instabilities in the RF chain of a microwave radiometer, a Dicke radiometer topology is often used, as in the case of the proposed surface water and ocean topography (SWOT) radiometer instrument. For this topology, a single-pole double-throw (SPDT) microwave switch is needed, which must have low insertion loss at the radiometer channel frequencies to minimize the overall receiver noise figure. Total power radiometers are limited in accuracy due to the continuous variation in gain of the receiver. High-frequency SPDT switches were developed in the form of monolithic microwave integrated circuits (MMICs) using 75 micron indium phosphide (InP) PIN-diode technology. These switches can be easily integrated into Dicke switched radiometers that utilize microstrip technology.

Montes, Oliver↗

NASA NTRS2012

On Optimal Control of Non-Autonomous Switched Systems with a Fixed Mode Sequence

We consider differentiability with respect to the switch times of the value function of an optimal control problem for a non-autonomous switched system. The control variables are the switch times between the modes and the input in each mode. We provide a method to compute the derivative of the cost function given a nominal input. Then, we view the optimal control problem as a parametrized optimization problem in which the switch times are the parameters and the optimization is over the set of feasible inputs of each mode. From this point of view, we provide conditions under which the continuity and differentiability of the optimal value function, that is the cost function optimized over the inputs, can be guaranteed.

Kamgarpour, Maryam↗

NASA NTRS2016

Wireless Nanoionic-Based Radio Frequency Switch

A nanoionic switch connected to one or more rectenna modules is disclosed. The rectenna module is configured to receive a wireless signal and apply a first bias to change a state of the nanoionic switch from a first state to a second state. The rectenna module can receive a second wireless signal and apply a second bias to change the nanoionic switch from the second state back to the first state. The first bias is generally opposite of the first bias. The rectenna module accordingly permits operation of the nanoionic switch without onboard power.

Nessel, James A.↗

NASA NTRS2017

Wireless Nanoionic-Based Radio Frequency Switch

Nessel, James A.↗

NASA NTRS2019

A Simple Control to Reduce the Voltage Stress of Non-Conducting Switches in Three-Level ANPC Converter

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices is increased, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage of non-conducting switches can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the over-voltage for the non-conducting switch. It is found that the nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing any additional hardware circuit is proposed to attenuate the impact of the nonlinearity. With the proposed control, the peak over-voltage of the non-conducting switch can be reduced significantly. Multi-pulse test is conducted for a 3L- ANPC converter built with silicon carbide (SiC) MOSFETs. The testing results show that the peak over-voltage decreases from 892 V to 624 V with the proposed control. More detailed analysis and experimental results will be provided in the final paper.

SiC MOSFET↗

NASA NTRSDate not supplied

Use of Mechanical Heat Switch to Speed up TVAC Transitions on Flight Hardware Below 200K

Spaceflight hardware that operates at temperatures well below room temperature usually require being well isolated from their warmer environment in order to manage thermal parasitics adequately. This is especially true for spaceflight systems that rely on passive cooling such as a radiator. During ground testing, this design configuration can be problematic for TVAC cycling between operational temperature extremes, since the hardware temperatures may move extremely slowly and lengthen the duration of an already expensive and heavily staffed system-level TVAC campaign. One of the challenges of using an external means of speeding up temperature transitions is that a TVAC campaign usually also requires the simulation of flight-like environments to validate the design, and introducing a test feature to speed up transitions can disrupt the system such that flight-like environments are not achievable. Such an approach was used for the L’Ralph instrument level TVAC test. L’Ralph is a passively cooled instrument on the Lucy mission with planned flyby’s of the Trojan asteroids around 5.5 AU. The optics and visible detector are cooled below 190K, and the IR detector is cooled below 110K. During instrument TVAC qualification testing, a mechanical motor-controlled heat switch uses clamping pressure via a vise-grip mechanism to achieve faster temperature transitions by increasing the conduction to a cold sink. The heat switch system then disengages and employs zero-Q controls to achieve flight-like thermal environments for thermal balance plateaus. Results from stand-alone testing of the heat switch are discussed, including correlated on/off ratios and the expected conductance across its operational temperature range. Test data from an instrument level TVAC that successfully utilized the heat switch are also shown.

Daniel G Bae↗

DOE OSTI2021

Smart controller with phantom inductor current sensing for switched mode power supplies

Voltage on the output terminal of an inductor is obtained as a first input signal to a control block (CB); the inductor has an input terminal connected to a power switch and driver block at a switching node. A sense input voltage is obtained on an output terminal of a sensing circuit that is not directly connected to the switching node, as a second input signal to the CB. A voltage is generated on a first output terminal of the CB and is selected such that the CB can use its first and second input signals to infer the current through the inductor. A pulse width modulation (PWM) signal is generated on a second output terminal of the CB, based on the inferred current through the inductor; the second output signal from the CB is provided to a PWM input terminal of the power switch and driver block.

Zhang, Xin↗

DOE OSTI2024

High-power electrically tunable switch

A high-voltage switch, whose operation leverages the speed of electrons to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, the high-voltage switch includes a first electrode, a second electrode spaced apart from the first electrode, a region of non-absorbing material occupying a portion of the space between the first and second electrodes and allowing a laser pulse to propagate therethrough without substantial absorption, and a region of absorbing material occupying another portion of the space and producing a charged particle cloud upon receiving the laser pulse. The high-voltage switch remains “on” upon the charged particle cloud reaching an electrode and until it has been collected by the electrode, and where the high-voltage switch remains “off” subsequent to the collection and until another generated charged particle cloud reaches the electrode.

Voss, Lars↗

DOE OSTI2024

Thermal diode and thermal switch for bi-directional heat transfer in building envelopes

The present disclosure relates to a directional heat transfer using thermal control devices, including a dual phase change thermal diode and an active contact-based thermal switch. The thermal diode includes a positive temperature coefficient switching material and a negative temperature coefficient switching material arranged in series. The thermal switch includes two thermally conducting surfaces which may be moved to contact (i.e., having a distance between them of substantially zero) creating minimal thermal contact resistance. Both thermal control devices may be used to control heat flow into and/or out of a building.

Kishore, Ravi Anant↗

DOE OSTI2020

Soft Switching Over the Entire Line Cycle for a Quadruple Active Bridge DCX in a DC to Three-Phase AC Module

This paper is focused on a transformer-isolated quadruple active bridge (QAB) dc-dc converter loaded by three full-bridge dc-ac inverters. The QAB functions as a "DC trans-former" (DCX) in the dc-to-three-phase ac module. The QAB outputs provide time-varying power at twice the line frequency, which presents challenges in maintaining zero voltage switching (ZVS) on the secondary sides during low-power portions of the line cycle. It is shown how ZVS can be achieved in a phase, even at zero-power transfer, using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. The approach is particularly effective in high-voltage applications using SiC MOSFETs, where reductions in switching loss outweigh additional conduction losses due to the circulating currents. A detailed analysis of ZVS switching waveforms at the zero power transfer is presented, including effects of nonlinear device capacitances. Analytical expressions are given for the optimal values of the magnetizing inductance and dead times of the QAB primary and secondary bridges. The approach is verified by experimental results on a 600 V, 4 kW prototype, demonstrating greater than 98.5% efficiency from 1 kW to 4 kW, with a peak efficiency of 99.0%. Compared to conventionally operated prototype, a 54% reduction in total loss is achieved at rated power.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2022

High-Speed and High-Power Ferroelectric Switching Current Measurement Instrument for Materials with Large Coercive Voltage and Remanent Polarization

A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response) are validated with a LiTaO 3 single crystal whose switching kinetics are well known. The new instrument described here enables measurements that are not possible using existing commercial measurement systems, including the observation of ferroelectric switching in large coercive field and large spontaneous polarization Al 0.7 Sc 0.3 N thin films.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2023

Tailoring Mid–Gap States of Chalcogenide Glass by Pressure–Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid–gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium–range clusters that break the global octet rule, such as over–coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over–coordinated clusters fails to generate mid–gap states, which are probably caused by hypervalent bonding, a multi–centered covalent bond participated by delocalized lone–pair electrons. This is confirmed by the pressure–driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over–coordinated medium–range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid–gap states and consequently the performance of PCM and OTS materials. Finally, these results reveal the origin of mid–gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Ultra-Fast Non-Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Low-current multilevel programmability with inherent non-volatility and high stability of resistance states is required for both multi-bit memory storage and deep learning accelerators but is difficult to achieve. Here, in a resistive switching system, this work realizes >512 (>9 bits) distinct non-volatile conductance levels with stable retention for each state with current levels down to the nanoampere range, highly promising for potential integration with small processing nodes with ultra-low power consumption requirements. This is achieved by demonstrating a new thin film design concept that encompasses three key features: an ultra-thin epitaxial oxygen ionic switching layer that provides a tunable energy barrier at the bottom electrode, an overcoat amorphous layer that acts as an ion migration barrier for stable state retention, and a partial conductive filament as a localized electronic transport channel to the epitaxial switching layer. A large dynamic resistance range of up to seven orders of magnitude is achieved with reset-free transitions among intermediate states, and programmability is demonstrated with ultra-fast (20 ns) pulses. Artificial neural network (ANN) simulations, based on the experimental performance and its non-idealities, demonstrate close-to-ideal inference accuracies for various Modified National Institute of Standards and Technology (MNIST) data sets.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Rational Control of Off‐State Heterogeneity in a Photoswitchable Fluorescent Protein Provides Switching Contrast Enhancement**

Abstract Reversibly photoswitchable fluorescent proteins are essential markers for advanced biological imaging, and optimization of their photophysical properties underlies improved performance and novel applications. Here we establish a link between photoswitching contrast, one of the key parameters that dictate the achievable resolution in nanoscopy applications, and chromophore conformation in the non‐fluorescent state of rsEGFP2, a widely employed label in REversible Saturable OpticaL Fluorescence Transitions (RESOLFT) microscopy. Upon illumination, the cis chromophore of rsEGFP2 isomerizes to two distinct off ‐state conformations, trans1 and trans2 , located on either side of the V151 side chain. Reducing or enlarging the side chain at this position (V151A and V151L variants) leads to single off ‐state conformations that exhibit higher and lower switching contrast, respectively, compared to the rsEGFP2 parent. The combination of structural information obtained by serial femtosecond crystallography with high‐level quantum chemical calculations and with spectroscopic and photophysical data determined in vitro suggests that the changes in switching contrast arise from blue‐ and red‐shifts of the absorption bands associated to trans1 and trans2 , respectively. Thus, due to elimination of trans2 , the V151A variants of rsEGFP2 and its superfolding variant rsFolder2 display a more than two‐fold higher switching contrast than their respective parent proteins, both in vitro and in E. coli cells. The application of the rsFolder2‐V151A variant is demonstrated in RESOLFT nanoscopy. Our study rationalizes the connection between structural and photophysical chromophore properties and suggests a means to rationally improve fluorescent proteins for nanoscopy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Nanoscale Imaging and Control of Volatile and Non-Volatile Resistive Switching in VO 2

Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. In this study, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO 2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Anomalously abrupt switching of wurtzite-structured ferroelectrics: simultaneous non-linear nucleation and growth model

Ferroelectric polarization switching is one common example of a process that occurs via nucleation and growth, and understanding switching kinetics is crucial for applications such as ferroelectric memory. Here we describe and interpret anomalous switching dynamics in the wurtzite-structured nitride thin film ferroelectrics Al 0.7 Sc 0.3 N and Al 0.94 B 0.06 N using a general model that can be directly applied to other abrupt transitions that proceed via nucleation and growth. When substantial growth and impingement occur while nucleation rate is increasing, such as in these wurtzite-structured ferroelectrics under high electric fields, abrupt polarization reversal leads to very large Avrami coefficients ( e.g., n = 11), inspiring an extension of the KAI (Kolmogorov–Avrami–Ishibashi) model. We apply this extended model to two related but distinct scenarios that crossover between (typical) behavior described by sequential nucleation and growth and a more abrupt transition arising from significant growth prior to peak nucleation rate. This work therefore provides a more complete description of general nucleation and growth kinetics applicable to any system while specifically addressing the anomalously abrupt polarization reversal behavior in new wurtzite-structured ferroelectrics.

36 MATERIALS SCIENCE↗