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At least 379 records · Page 21

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Preparation, analysis, and application of coated glass targets for the Wendelstein 7-X laser blow-off system

Coated glass targets are a key component of the Wendelstein 7-X laser blow-off system that is used for impurity transport studies. The preparation and analysis of these glass targets as well as their performance is examined in this paper. The glass targets have a high laser damage threshold and are coated via physical vapor deposition with μm thick films. In addition, nm-thin layers of Ti are used as an interface layer for improved ablation efficiency and reduced coating stress. Hence, the metallic or ceramic coating has a lateral homogeneity within 2% and contaminants less than 5%, being optimal for laser ablation processing. With this method, a short (few ms) and well defined pulse of impurities with about 1017 particles can be injected close to the last closed flux surface of Wendelstein 7-X. In particular, a significant amount of atoms with a velocity of about 1 km/s enters the plasma within 1 ms. The atoms are followed by a negligible concentration of slower clusters and macro-particles. This qualifies the use of the targets and applied laser settings for impurity transport studies with the laser blow-off system in Wendelstein 7-X.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

Diffusion energy barrier of Au on Bi 2 Se 3 : theory and experiment

The stability and diffusion of ultra-thin thermally deposited Au films on Bi 2 Se 3 was studied using scanning tunneling microscopy and density functional theory calculations. The Au/Bi 2 Se 3 interface is of interest as gold is predicted to provide excellent electrical contact while maintaining the spin-polarized characteristics of the electronic states in Bi 2 Se 3 that make the material attractive for spintronic applications. When deposited at room temperature, Au 10 covers the surface with tightly packed islands of nanometer scale dimension. The surface morphology is stable up to 400K. At this annealing temperature, Au atoms have sufficient energy to diffuse across the surface and aggregate into larger nanostructures. At 550K, the Bi 2 Se 3 surface is only sparsely covered, and the Au has formed clusters with length scales 5-10 times larger than the original islands formed at room temperature. Comparison of the experiment and first principle calculation lead to the conclusion that the diffusion energy barrier for Au on Bi 2 Se 3 is as high as 0.47 eV, 15 which is much larger than diffusion barriers on other van der Waals materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Electronic growth of Pd(111) nanostructures on MoS 2

Quantum confinement effects can induce the formation of discrete nanostructures with well-defined preferred heights in thin metallic films. In most systems, such electronic growth modes are weak and limited to cryogenic conditions. Recently, however, we have discovered that metals grown upon van der Waals surfaces can exhibit electronic growth at, or even above, room temperature to spontaneously form well-defined and highly stable nanostructures. Here, we explore the initial stages of room temperature deposition of Pd onto MoS 2 . We found that, even for minimal thicknesses, Pd spontaneously formed discrete islands with three atomic layers. The islands maintained this preferred height for nominal coverages below three atomic layers. At higher coverages, the preferred height switched abruptly to six atomic layers. Unlike previous studies using Au or Ag, the islands did not increase laterally with coverage but rather increased in number with lateral size remaining about the same. The preferred heights in Pd/MoS 2 correlate to the Pd Fermi surface topography and are also consistent with thicknesses showing minima in the density of states at the Fermi level, which suggest that the electronic growth modes are the driving factors in these self-assembled Pd nanostructures. The Pd system shows a preference for island nucleation compared to Au and Ag which grow laterally with increasing coverage. Furthermore, this is likely related to differences in bonding at the interface as Pd is typically much more reactive than Ag or Au.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits

Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb-Au, ex situ Nb-Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.

Makita, Junki [MIT; Temple U.] (ORCID:000000026889↗

DOE OSTI2021

Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films

We demonstrate ferroelectricity in Mg-substituted ZnO thin films with the wurtzite structure. Zn 1–x Mg x O films are grown by dual-cathode reactive magnetron sputtering on (111)-Pt // (0001)-Al 2 O 3 substrates at temperatures ranging from 26 to 200 °C for compositions spanning from x = 0 to x = 0.37. X-ray diffraction indicates a decrease in the c-lattice parameter and an increase in the a-lattice parameter with increasing Mg content, resulting in a nearly constant c/a axial ratio of 1.595 over this composition range. Transmission electron microscopy studies show abrupt interfaces between Zn 1–x Mg x O films and the Pt electrode. When prepared at pO 2 = 0.025, film surfaces are populated by abnormally oriented grains as measured by atomic force microscopy for Mg concentrations >29%. Raising pO 2 to 0.25 eliminates the misoriented grains. Optical measurements show increasing bandgap values with increasing Mg content. When prepared on a 200 °C substrate, films display ferroelectric switching with remanent polarizations exceeding 100 μC cm –2 and coercive fields below 3 MVcm –1 when the Mg content is between ~30% and ~7%. Substrate temperature can be lowered to ambient conditions, and when doing so, capacitor stacks show only minor sacrifices to crystal orientation and nearly identical remanent polarization values; however, coercive fields drop below 2 MV/cm. Using ambient temperature deposition, we demonstrate ferroelectric capacitor stacks integrated directly with polymer substrate surfaces.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Generalized Ellipsometry Measurements of Crystalline Thin Film and Bulk Tin Oxide

Here, several bulk and thin-film crystals of SnO2 are grown and examined using generalized ellipsometry techniques. The bulk samples are grown using the chemical vapor transport technique and thin films of SnO2 are grown using the pulsed laser deposition technique. The bulk samples are examined using the two-modulator generalized ellipsometry microscope (2-MGEM) at normal incidence and the spectroscopic two-modulator generalized ellipsometer (2-MGE). The spectroscopic optical functions of tin oxide are then obtained using the 2-MGE from 1.46 to 6.2 eV. The material is highly birefringent, and the ordinary bandgap is less than the extraordinary band edge. 2-MGE measurements are also made on thin-film samples of crystalline tin oxide grown on sapphire and rutile, showing no cross polarization. Because of the complicated morphology of the tin oxide films grown on sapphire, the ellipsometry data are simulated using the Tauc–Lorentz model. Films grown on rutile had the optic axis perpendicular to the sample surface, but the film is strained, resulting in a more complicated ellipsometric spectrum. These films are modeled using the air/surface roughness/tin oxide/interface/rutile model, where the roughness and interface are modeled using the incomplete Beta function.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Iridium Surface Oxide Affects the Nafion Interface in Proton-Exchange-Membrane Water Electrolysis

Proton-exchange-membrane water electrolyzer (PEMWE) catalyst layers consist of aggregates of catalyst particles (typically iridium) and ionomer (typically Nafion). Prior work suggests that the oxide form of Ir affects the kinetics of the oxygen-evolution reaction. However, because most catalyst-benchmarking studies are conducted ex situ in liquid electrolytes, it remains unclear how the ionomer is influenced by the catalyst oxide and affects overall cell performance. Using a suite of experimental techniques, we conduct fundamental investigations into model ink (catalyst and ionomer dispersed in solution) and thin-film systems to inform cell-level overpotential analysis as a function of three forms of Ir (metallic Ir m , oxyhydroxide IrOOH, and oxide IrO 2 ). Furthermore, nafion on Ir m has a high degree of phase separation and higher swelling, likely improving the ionic conductivity. Additionally, Nafion binds most strongly to IrOOH, likely yielding reduced kinetic overpotentials. These findings highlight the intricacies of the ionomer/Ir interface and provide insight into all catalyst-layer systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Pristine Interface between Lithium Lanthanum Zirconate and Lithium Manganese Oxide by Pulsed Laser Deposition

Solid state lithium-ion batteries have garnered increasing interest in recent years due to several potential advantages over liquid-electrolyte based systems. The possibility of integrating the lithium garnet oxide, Li 6.75 La 3 Zr 1.75 Ta 0.25 O 12 (LLZTO), with the high voltage cathode, spinel Li x Mn 2 O 4 (LMO), is evaluated here. Thin film bilayer structures are prepared by pulsed laser deposition on MgO (001) substrates and characterized by x-ray diffraction and transmission electron microscopy. The LLZTO is grown by an alternating layer-by-layer deposition of LLZTO and Li 3 N and subsequently annealed for several hours at 575 °C to promote crystallinity. Growth of crystalline LMO with a pristine interface to LLZTO is achieved by gentle heat treatment (500 °C) to remove surface carbonate from the electrolyte and by cathode growth at a low temperature of 250 °C. Higher temperature depositions (330 – 450 °C) result in reaction between the two materials and the appearance of Li 2 MnO 3 , which may be in part due to the presence of excess lithium in the electrolyte layer. Because fully lithiated LiMn 2 O 4 has a voltage of ≈3.7 V versus Li+/Li, the observation of a well-defined interface, free of impurity phases and with no interdiffusion of elements, indicates LLZTO is stable to at least 3.7 V.

Garnet LLZO↗

DOE OSTI2020

Mesoporous nanocrystalline film architecture for capacitive storage devices

A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

25 ENERGY STORAGE↗

DOE OSTI2024

Mesoporous nanocrystalline film architecture for capacitive storage devices

Dunn, Bruce S.↗

DOE OSTI2020

Mesoporous Silica Formation Mechanisms Probed Using Combined Spin–Echo Modulated Small-Angle Neutron Scattering (SEMSANS) and Small-Angle Neutron Scattering (SANS)

In this work, the initial formation stages of surfactant-templated silica thin films which grow at the air–water interface were studied using combined spin–echo modulated small-angle neutron scattering (SEMSANS) and small-angle neutron scattering (SANS). The films are formed from either a cationic surfactant or nonionic surfactant (C 16 EO 8 ) in a dilute acidic solution by the addition of tetramethoxysilane. Previous work has suggested a two stage formation mechanism with mesostructured particle formation in the bulk solution driving film formation at the solution surface. From the SEMSANS data, it is possible to pinpoint accurately the time associated with the formation of large particles in solution that go on to form the film and to show their emergence is concomitant with the appearance of Bragg peaks in the SANS pattern, associated with the two-dimensional hexagonal order. The combination of SANS and SEMSANS allows a complete depiction of the steps of the synthesis that occur in the subphase.

36 MATERIALS SCIENCE↗

NASA NTRS2013

NO PLIF Visualizations of the Orion Capsule in LENS-I

Planar laser-induced fluorescence (PLIF) of nitric oxide (NO) was used to visualize the interaction of reaction-control-system (RCS) jet flows in the wake of a hypersonic capsule reentry vehicle. The tests were performed at the Calspan University at Buffalo Research Center's (CUBRC) LENS-I reflected shock tunnel facility. This was the first application of PLIF to study RCS jets in a large-scale pulsed hypersonic facility. The LENS-I facility allowed RCS jet flows to be studied while varying the flow enthalpy, Reynolds number, angle of attack and jet configuration. The interaction of pitch and roll jets with the flowfield was investigated. Additionally, thin film sensors were used to monitor heat transfer on the surface of the model to detect any localized heating resulting from the firing of the RCS jets. Tests were conducted with the model held at angles of attack of 18deg and 22deg. The nominal Mach number in all tests was 8, while Reynolds number based on model diameter ranged from 2.2x10(exp 6) - 1.5x10(exp 7). Images were processed using the Virtual Diagnostics Interface (ViDI) system developed at NASA Langley Research Center to provide a three-dimensional display of the experimental data.

Combs, C.↗

DOE OSTI2021

Ultrahigh-Rate and Long-Life Zinc–Metal Anodes Enabled by Self-Accelerated Cation Migration

Aqueous zinc ion batteries are receiving unprecedented attention owing to their markedly high safety and sustainability, yet their lifespan particularly at high rates is largely limited by the poor reversibility of zinc (Zn) metal anodes, due to the random ion diffusion and sluggish ion replenishment at reaction interface. In this work, we propose a tunnel-rich and corona-poled ferroelectric thin film coating for Zn metal anode to tackle above conundra. It is demonstrated that the poled ferroelectric coating can better deconcentrate and self-accelerate ion migration at coating/Zn interface upon electroplating process than untreated ferroelectric coating and bare Zn, thus enabling a compact and horizontally-aligned Zn morphology even at ultrahigh rates. Notably, a maximal cumulative plating capacity of over 6500 mAh cm -2 (at 10 mA cm -2 ) is achieved for the surface-modified Zn metal anode, showing extraordinary reversibility of Zn plating/stripping. This work provides new insights in stabilizing Zn metal electrodeposition at the scale of interfacial ion diffusion.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS1983

Initial '80s Development of Inflated Antennas

State of the art technology was considered in the definition and documentation of a membrane surface suitable for use in a space reflector system for long durations in orbit. Requirements for a metal foil-plastic laminate structural element were determined and a laboratory model of a rigidized element to test for strength characteristics was constructed. Characteristics of antennas ranging from 10 meters to 1000 meters were determined. The basic antenna configuration studied consists of (1) a thin film reflector, (2) a thin film cone, (3) a self-rigidizing structural torus at the interface of the cone and reflector; and (4) an inflation system. The reflector is metallized and, when inflated, has a parabolic shape. The cone not only completes the enclosure of the inflatant, but also holds the antenna feed at its apex. The torus keeps the inflated cone-reflector from collapsing inward. Laser test equipment determined the accuracy of the inflated paraboloids.

Friese, G. J.↗

DOE OSTI2020

Optoelectronic and material properties of solution-processed Earth-abundant Cu 2 BaSn(S, Se) 4 films for solar cell applications

Copper barium thioselenostannate, Cu 2 BaSnS 4-x Se x (CBTSSe), absorbers employ low-toxicity and abundant metals while offering low-cost manufacturing options, controllable stoichiometry and band gap tunability (from 2 eV at x = 0 to 1.55 eV at x = 3). CBTSSe can therefore be considered a prospective candidate for maintaining or improving upon the advantages of already commercialized Cu(In,Ga)(S,Se) 2 (CIGSSe) and CdTe absorbers. Here, we focus on solution-deposited stoichiometric CBTSSe films with band gap of 1.59 eV (x ≈ 3) and explore the fundamental film properties. Temperature- and excitation-dependent photoluminescence studies reveal a dominant defect emission at ~1.5 eV and a second deep defect feature at 1.15 eV. From time-resolved terahertz measurements, we find a charge carrier (electron and hole sum) mobility of ~140 cm 2 /Vs—i.e., comparable to values in CIGSSe or Cu 2 ZnSnS 4-x Se x (CZTSSe)—as well as a two-component minority carrier lifetime. A longer-lived lifetime component (~2 ns) arises from bulk recombination. However, strong recombination at the (bare) surface leads to a ~50 ps lifetime, inferior to state-of-the-art CIGSSe or CZTSSe absorbers. This recombination issue may worsen for CBTSSe/CdS interfaces, due to a cliff-like band alignment with 0.6 eV band offset, as revealed by ultraviolet photoemission spectroscopy. A low number of charge carriers within the absorber further contributes to a high series resistance. Employing these films, we also report the highest performance achieved from solution-processed trigonal CBTSSe thin-film photovoltaic devices, with open circuit voltage, short-circuit current density, fill factor and efficiency of 470 mV, 14.3 mA/cm 2 , 43.6% and 2.9%, respectively. The physical measurements provided on the stoichiometric solution-processed CBTSSe absorber further point to critical areas for future improvement of CBTSSe and related photovoltaic cells in the quest for higher efficiency devices based on earth abundant metals.

14 SOLAR ENERGY↗

DOE OSTI2025

Numerical assessment of triply periodic minimal surfaces for direct air capture of carbon dioxide

Direct air capture (DAC) systems often consist of packing material wetted by a capture fluid that reacts with CO 2 in the airstream. The efficiency of the contactor is determined by a complex relationship of fluid dynamics, heat and mass transfer, contactor geometry, and chemical properties. The efficiency of the contactor must be balanced with other factors, primarily pressure drop through the system. Triply periodic minimal surfaces (TPMS) are a class of differential surfaces that have been explored in multiple engineering applications and have been shown to exhibit excellent performance when used in heat exchangers. Their tortuous path provides a high surface-to-volume ratio and favorable trade-off between contact area and pressure drop. In this work, a gyroid-type TPMS contactor was evaluated using computational fluid dynamics for a variety of geometric parameters to explore the potential benefit of TPMS shapes for DAC applications. A thin-film model was employed to model the flow and distribution of the capture solvent, allowing efficient simulations of TPMS structures at scale by eliminating the need for a computationally intensive interface capturing method. A liquid-gas mass transfer model was implemented in the commercial software STAR-CCM+ and used to predict the CO 2 capture efficiency and study the trade-off between capture performance and pressure drop through analysis of capture rates, mass transfer coefficients, and other relevant variables. TPMS contactors with a variety of geometric parameters and two capture solvent options were investigated to determine the effect of design choices on the operational performance of DAC systems. In conclusion, results showed that while contactor geometry is the dominant factor in efficiency and pressure drop, the physiochemical properties of the solvent are an important secondary influence on the contactor performance.

CFD↗

DOE OSTI2025

Chemical Analysis of Tantalum Thin Films compared to Niobium Thin Films using SIMS and XPS

Superconducting qubits are a leading platform for quantum computation. These circuits are typically made from superconducting materials like aluminum or niobium. However, the amorphous niobium oxide and aluminum oxide on the surface of these circuits introduce considerable RF loss due to the presence of two-level systems (TLS), which limits the maximum coherence times T1 to ~100 μs. Capping the niobium qubits with a tantalum layer leads to a 3- 5x improvement [Bal et al., 2024]. But even in this case, tantalum forms an amorphous surface oxide that introduces loss. In an effort to devise strategies to eliminate the presence of this oxide, we present a comprehensive study on the nature of Ta oxide using x-ray photoemission spectroscopy (XPS) and secondary ion mass spectrometry (ToF-SIMS) as a function of heat treatment. The thin films were annealed in ultra-high vacuum conditions and analyzed in situ to characterize the composition and evolution of the native tantalum oxide layer and oxide-metal interface. Our analysis reveals two critical differences between tantalum and niobium oxides: Nb2O5 completely dissolves at 400°C, while Ta2O5 persists even at 800°C. Additionally, tantalum oxide contains only a single suboxide (TaO), in contrast to niobium's two suboxides (NbO and NbO2). The suboxide of tantalum contributes minimally to the total oxide content and shows a relative increase with temperature. Understanding the oxide’s behavior will open new pathways for optimizing coherence times in tantalum qubits.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Flux-Closure Domain Structures in Ferroelectric K 0.5 Na 0.5 NbO 3 Thin Films

Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, in this work, we employ ferroelectric K 0.5 Na 0.5 NbO 3 (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures. We systematically investigate the effects of finite size, misfit strains, and electrical boundary conditions on the formation and switching of these topological structures. For the Type-I structure, size reduction or small misfit strain facilitates a transition of the flux-closure pattern to polar vortices. Type-II structures emerge under open-circuit electrical boundary conditions of the film, forming at the junctions of specific domain walls with the film surface or the film–substrate interface. The formation mechanisms of these two flux-closure structures are rationalized from an energy perspective. We demonstrated switching capabilities of Type-II and Type-III structures by obtaining polarization–electric field hysteresis loops. Our simulations also reveal a reversible electric-field-induced transition between the orthorhombic and rhombohedral ferroelectric phases with a checkerboard domain pattern, during which the integrity of the flux-closure structure is preserved. These findings provide theoretical insights and practical guidance for identifying and manipulating topological structures in low-symmetry ferroelectrics, paving the way for developing energy-efficient microelectronic devices based on topological structures.

P-E loop↗