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At least 379 records · Page 21

Low-field magnetic anomalies in single crystals of the A-type square-lattice antiferromagnet EuGa 4

The body-centered-tetragonal antiferromagnet EuGa 4 was recently identified as a Weyl nodal-line semimetal that exhibits the topological Hall effect below its reported antiferromagnetic (AFM) ordering temperature T N = 15 – 16.5 K which we find to be T N = 16.4 ( 2 ) K. The Eu +2 ions are located at the corners and body centers of the unit cells. EuGa 4 exhibits A-type antiferromagnetic order below T N , where the Eu 2+ spin-7/2 moments are ferromagnetically aligned in the ab plane with the Eu moments in adjacent Eu planes along the c axis aligned antiferromagnetically. Low-field magnetization versus field M(H ab ) data at T = 2 K with the field aligned in the ab plane are reported that exhibit anomalous positive curvature up to a critical field H c1 at which a second-order transition occurs with H c1 ≈ 0.85 kOe for H∥ [1,1,0] and ≈ 4.8 kOe for H∥[1,0,0]. For larger fields, the linear behavior M ab = χ(T N ) H a b is followed until the critical field H c is reached at which all moments become aligned with the applied field. A theory is formulated for T = 0 K that fits the observed M(H ab ) behavior at T = 2 K well, where domains of A -type AFM order with fourfold rotational symmetry occur in the AFM state in zero field. The moments in the four domains reorient to become almost perpendicular to H ab at H c1 , followed by increasing canting of all moments toward the field with increasing field up to H c which is reported to be 71 kOe. A first-order transition in M(H ab ) at H ab = H c1 is predicted by the theory for T = 0 K when H ab is at a small angle from the [1,0,0] direction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unconventional spin-orbit torques from sputtered MoTe 2 films

Materials with strong spin-orbit coupling and low crystalline symmetry are promising for generating large unconventional spin-orbit torques (SOTs), such as in-plane fieldlike (FL) torques and out-of-plane dampinglike (DL) torques, which can effectively manipulate and deterministically switch an out-of-plane magnetization without the need for additional external in-plane magnetic fields. Here, we report SOTs generated by magnetron-sputtered 1⁢T' MoTe 2 /Permalloy (Py; Ni 80 ⁢Fe 20 )/MgO heterostructures using both spin-torque ferromagnetic resonance (ST-FMR) and second harmonic Hall measurements. We observed unconventional FL and DL torques in our samples due to spins polarized normal to the interface of MoTe 2 and Py layers, and studied the influence of crystallographic order and MoTe 2 layer thickness on the SOTs. By comparing the Raman spectra of 1⁢T' MoTe 2 samples prepared in different ways, we found a tensile strain in sputtered MoTe 2 films, which might further enhance the generation of unconventional torques by reducing the symmetry of 1⁢T' MoTe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of Dilute Magnetism in a Topological Insulator

Three-dimensional (3D) topological insulator (TI) has emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a 3D TI consist of a massless Dirac cone, which is characterized by the Z 2 topological invariant. Introduction of magnetism on the surface of a TI is essential to realize the quantum anomalous Hall effect and other novel magneto-electric phenomena. Here, by using a combination of first-principles calculations, magneto-transport and angle-resolved photoemission spectroscopy (ARPES), we study the electronic properties of gadolinium (Gd)-doped Sb 2 Te 3 . Our study shows that Gd doped Sb 2 Te 3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. Our results provide a new platform to investigate the interactions between dilute magnetism and topology in magnetic doped topological materials.

36 MATERIALS SCIENCE↗

Bismuthene Under Cover: Graphene Intercalation of a Large Gap Quantum Spin Hall Insulator

Abstract The quantum spin Hall insulator bismuthene, a two‐third monolayer of bismuth on SiC(0001), is distinguished by helical metallic edge states that are protected by a groundbreaking 800 meV topological gap, making it ideal for room temperature applications. This massive gap inversion arises from a unique synergy between flat honeycomb structure, strong spin orbit coupling, and an orbital filtering effect that is mediated by the substrate. However, the rapid oxidation of bismuthene in air has severely hindered the development of applications, so far confining experiments to ultra‐high vacuum conditions. Intercalating bismuthene between SiC and a protective sheet of graphene, this barrier is successfully overcome. As demonstrated by scanning tunneling microscopy and photoemission spectroscopy, graphene intercalation preserves the structural and topological integrity of bismuthene, while effectively shielding it from oxidation in air. Hereby, hydrogen is identified as the critical process gas that was missing in previous bismuth intercalation attempts. These findings facilitate ex‐situ experiments and pave the way for the development of bismuthene based devices, signaling a significant step forward in the development of next‐generation technologies.

Chemistry↗

Crystal orientation dependence of interfacial magnetic anisotropy at heavy-metal/magnetic-garnet interfaces

Ferrimagnetic insulators capped with a heavy metal are becoming an increasingly interesting materials system in spintronics due to their unique ability for electrical manipulation and detection of magnetic states and spin textures via spin-orbit torques. The ability to engineer magnetic anisotropy is a powerful tool for tuning the recently discovered phenomena in these bilayers such as electrical switching or the stabilization of topological magnetic textures. Here, we observe large shifts in the magnetic anisotropy in Tm 3 Fe 5 O 13 and Y 3 Fe 5 O 12 thin films due to heavy-metal capping layers, which strongly depends on the orientation of the substrate and therefore the orientation of the epitaxial films. This work suggests large Rashba spin-orbit coupling at the metal/ferrimagneticinsulator interface, which can be engineered in spintronic devices that utilize spin-orbit torques for electrical control of the magnetization in magnetic insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Thermal Hall conductivity of electron-doped cuprates

Measurements of the thermal Hall conductivity in hole-doped cuprates have shown that phonons acquire chirality in a magnetic field both in the pseudogap phase and in the Mott insulator state. The microscopic mechanism at play is still unclear. A number of theoretical proposals are being considered including skew scattering of phonons by various defects, the coupling of phonons to spins, and a state of loop-current order with the appropriate symmetries, but more experimental information is required to constrain theoretical scenarios. Here we present our study of the thermal Hall conductivity κ xy in the electron-doped cuprates Nd 2–x Ce x CuO 4 and Pr 2–x Ce x CuO 4 for dopings across the phase diagram, from x = 0 in the insulating antiferromagnetic phase up to x = 0.17 in the metallic phase above optimal doping. We observe a large negative thermal Hall conductivity at all dopings in both materials. Since heat conduction perpendicular to the CuO 2 planes is dominated by phonons, the large thermal Hall conductivity we observe in electron-doped cuprates for a heat current in that direction must also be due to phonons, as in hole-doped cuprates. However, the degree of chirality, measured as the ratio |κ xy /κ xx | where κ xx is the longitudinal thermal conductivity, is much larger in the electron-doped cuprates. Here, we discuss various factors that may be involved in the mechanism that confers chirality to phonons in cuprates, including short-range spin correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large Spin-Orbit Torque in 𝑎-Plane 𝛼−Fe 2 ⁢O 3 /Pt Bilayers

Realization of efficient spin-orbit torque switching of the Neel vector in insulating antiferromagnets is a challenge, often complicated by spurious effects. Quantifying the spin-orbit torques in antiferromagnet or heavy metal heterostructures is an important first step toward this goal. Here, we employ magneto-optic techniques to study damping-like spin-orbit torque (DL-SOT) in a-plane α-Fe 2 O 3 (hematite) with a Pt spin-orbit overlayer. We find that the DL-SOT efficiency is 2 orders of magnitude larger than reported in c- and r-plane hematite/Pt using harmonic Hall techniques. The large magnitude of DL-SOT is supported by direct imaging of current-induced motion of antiferromagnetic domains that happens at moderate current densities. Furthermore, our study introduces a new method for quantifying spin-orbit torque in antiferromagnets with a small canted moment and identifies a-plane α-Fe 2 O 3 as a promising candidate to realize efficient SOT switching.

Antiferromagnetism↗

Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe 2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm 2 /Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Plasmons in Z 2 topological insulators

Here, we study plasmonic excitations in the Kane-Mele model, a two-dimensional Z 2 topological insulator on the honeycomb lattice, using the random phase approximation (RPA). In the topologically nontrivial phase, the model has conducting edge states that traverse the bulk energy gap and display spin-momentum locking. Such a state of matter is called the quantum spin hall (QSH) phase, which is robust against time-reversal (TR) invariant perturbations. We find that in the QSH phase, gapless spin-polarized plasmons can be excited on the edges of the system. The propagation of these plasmons is chiral for each individual spin component and shows spin-momentum locking for both spin components on the same edge. Moreover, we study the effect of external magnetic fields on the gapless edge plasmons. Specifically, out-of-plane magnetic fields delocalize edge plasmons propagating in one direction without affecting the other one, while an in-plane magnetic field can be applied to selectively excite a specific spin-plasmon branch with proper doping or gating to the system. Our findings may have potential applications in novel plasmonic and spintronic devices. We also investigate plasmons in the Kane-Mele model on a finite-sized diamond-shaped nanoflake and observe low-energy plasmons circulating the boundary of the material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin–orbit torques in structures with asymmetric dusting layers

Current-induced spin–orbit torques (SOTs) in heavy metal/ferromagnet heterostructures have emerged as an efficient method for magnetization switching with applications in nonvolatile magnetic memory and logic devices. However, experimental realization of SOT switching of perpendicular magnetization requires an additional inversion symmetry breaking, calling for modifications of the conventional SOT heterostructures. In this work, we study SOTs and deterministic switching of perpendicular magnetization by inserting different asymmetric dusting layers at the heavy metal/ferromagnet interface. Similar to the previous works with lateral structural asymmetry, we study the emergence of current-induced perpendicular effective magnetic fields (H z eff ). By examining three different material combinations of heavy metal/dusting layers (W/IrMn, Pt/IrMn, and W/Ta), we shed light on the origins of H z eff ; we show that H z eff is generically created in all the studied asymmetric structures, has a close correlation with the interfacial magnetic anisotropy, and is independent of the signs of spin Hall angles of the materials. Furthermore, we show that the induction of H z eff enables field-free deterministic SOT switching of perpendicular magnetization. Our results can be used in designing SOT heterostructures for practical applications in nonvolatile technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Scaling, rotation, and channeling behavior of helical and skyrmion spin textures in thin films of Te-doped Cu 2 OSeO 3

Topologically nontrivial spin textures such as vortices, skyrmions, and monopoles are promising candidates as information carriers for future quantum information science. Their controlled manipulation including creation and annihilation remains an important challenge toward practical applications and further exploration of their emergent phenomena. Here, we report controlled evolution of the helical and skyrmion phases in thin films of multiferroic Te-doped Cu 2 OSeO 3 as a function of material thickness, dopant, temperature, and magnetic field using in situ Lorentz phase microscopy. We report two previously unknown phenomena in chiral spin textures in multiferroic Cu 2 OSeO 3 : anisotropic scaling and channeling with a fixed-Q state. The skyrmion channeling effectively suppresses the recently reported second skyrmion phase formation at low temperature. Our study provides a viable way toward controlled manipulation of skyrmion lattices, envisaging chirality-controlled skyrmion flow circuits and enabling precise measurement of emergent electromagnetic induction and topological Hall effects in skyrmion lattices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of Anisotropic Strain on Spin–Orbit Torque Produced by the Dirac Nodal Line Semimetal IrO 2

We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξ DL ) spin–orbit torque exerted on an adjacent ferromagnet film by current flowing in epitaxial (001) and (110) IrO 2 thin films. IrO 2 possesses Dirac nodal lines (DNLs) in the band structure that are gapped by spin–orbit coupling, which could enable a very high spin Hall conductivity, σ SH . We find that the (001) films do exhibit exceptionally high ξ DL ranging from 0.45 at 293 K to 0.65 at 30 K, which sets the lower bounds of σ SH to be 1.9 × 10 5 and 3.75 × 10 5 Ω –1 m –1 , respectively, 10 times higher and of opposite sign than the theoretical prediction. Furthermore, ξ DL and σ SH are substantially reduced in anisotropically strained (110) films. Here, we suggest that this high sensitivity to anisotropic strain is because of changes in contributions to σ SH near the DNLs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Doping Limits of Phosphorus, Arsenic, and Antimony in CdTe

Low p-type doping is a limiting factor to increase CdTe thin-film solar-cell efficiency toward the theoretical Shockley-Queisser limit of 33%. Previous calculations predict relatively high ionization energies for group-V acceptors (P, As, and Sb) and they are plagued by self-compensation, forming AX-centers, severely limiting hole concentration. However, recent experiments on CdTe single crystals indicate a much more favorable scenario, where P, As, and Sb behave as shallow acceptors. Using hybrid functional calculations, we solve this puzzle by showing that the ionization energies significantly decrease with the supercell size. When including the effects of spin-orbit coupling and extrapolating the results to the dilute limit, we find these impurities behave as hydrogenic-like shallow acceptors, and AX-centers are unstable and do not limit ptype doping. We address the differences between our results and previous theoretical predictions and show that our ionization energies predict hole concentrations that agree with recent temperature-dependent Hall measurements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Type-II Weyl nodes, flat bands, and evidence for a topological Hall-effect in the new ferromagnet FeCr 3 Te 6

The interplay between linearly dispersing, or Dirac-like, and flat electronic bands, for instance, in the kagome ferromagnets, has attracted attention due to a possible interplay between topology and electronic correlations. Here, we report the synthesis, structural, electrical, and magnetic properties of a single-crystalline ferromagnetic compound, namely Fe 1/3 ⁢CrTe 2 or FeCr 3 ⁢Te 6 , which crystallizes in the 𝑃$\overline{3}$⁢𝑚⁢1 space group instead of the 𝐼⁢2/𝑚 previously reported for FeCr 2 ⁢Te 4 . Electronic band structure calculations reveal type-II Dirac nodes and relatively flat bands near the Fermi level (ε 𝐹 ). This compound shows onset Curie temperature 𝑇 c ≃ 120K, followed by an additional ferromagnetic transition near 𝑇 c2 ∼ 92.5K. Below 𝑇 c , FeCr 3 ⁢Te 6 displays a pronounced anomalous Hall effect, as well as sizable coercive fields that exceed 𝜇 0 ⁢𝐻=1 T at low 𝑇⁢s. However, a scaling analysis indicates that the anomalous Hall effect results from a significant intrinsic contribution, as expected from the calculations, and also from the extrinsic mechanism, i.e., scattering. The extrinsic contribution probably results from occupational disorder at the 1b Fe-site within the van der Waals gap of the CrTe 2 host. We also observe evidence for a topological Hall component superimposed onto the overall Hall response, suggesting the presence of chiral spin textures akin to skyrmions in this centrosymmetric system. Their possible presence will require experimental confirmation.

36 MATERIALS SCIENCE↗

Giant spin transport anisotropy in magnetic topological insulators

Here, we report on exceptionally long spin transport and giant spin lifetime anisotropy in the gapped surface states of three-dimensional (3D) magnetic topological insulators (MTIs). We examine the properties of these states using the three-dimensional Fu-Kane-Mele Hamiltonian model in the presence of a magnetic exchange field. The corresponding spin textures of surface states, which are well reproduced by an effective two-band model, hint at a considerable enhancement of the lifetime of out-of-plane spins compared to in-plane spins. This is confirmed by large-scale spin transport simulations for 3D MTIs with disorder. The energy dependence of the spin lifetime anisotropy arises directly from the nontrivial spin texture of the surface states, and is correlated with the onset of the quantum anomalous Hall phase. Our findings suggest different spin filtering capabilities of the gapped surface MTI states, which could be explored by nonlocal spin valve measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

THz-range Faraday rotation in the Weyl semimetal candidate Co 2 TiGe

The Co 2 family of ferromagnetic Heusler alloys has attracted interest due to their fully spin-polarized nature, making them ideal for applications in spintronic devices. More recently, the existence of room temperature time-reversal-breaking Weyl nodes near the Fermi level was predicted and confirmed in these systems. As a result of the presence of these Weyl nodes, these systems possess a non-zero momentum space Berry curvature that can dramatically influence transport properties such as the anomalous Hall effect. One of these candidate compounds is Co 2 TiGe. Recently, high-quality molecular beam epitaxy-grown thin films of Co 2 TiGe have become available. In this work, we present a THz-range measurement of MBE-grown Co 2 TiGe films. We measure the THz-range Faraday rotation, which can be understood as a measure of the anomalous Hall effect. We supplement this work with electronic band-structure calculations showing that the principal contribution to the anomalous Hall effect in this material stems from the Berry curvature of the material. Overall, our work shows that this class of Heusler materials shows promise for Weyl semimetal based spintronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Gate-tunable heavy fermion quantum criticality in a moiré Kondo lattice

We propose a realization of Kondo lattice physics in moiré superlattices at the interface between a WX 2 homobilayer and MoX 2 monolayer (X = S,Se). Under appropriate gating conditions, the interface WX 2 layer forms a triangular lattice of local moments that couple to itinerant electrons in the other WX 2 layer via a gate-tunable Kondo exchange interaction. Using a parton mean-field approach, we identify a range of twist angles which support a gate-tuned quantum phase transition between a heavy Fermi liquid with large anomalous Hall conductance and a chiral spin liquid coexisting with a light Fermi liquid and describe experimental signatures to distinguish among competing theoretical scenarios.

36 MATERIALS SCIENCE↗

Néel-type skyrmion in WTe 2 /Fe 3 GeTe 2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii–Moriya interaction and Néel-type skyrmions are induced at the WTe 2 /Fe 3 GeTe 2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii–Moriya interaction is estimated to have a large energy of 1.0 mJ m –2 . This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.

42 ENGINEERING↗