Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “silicon processing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Probing Clustering Dynamics between Silicon and PAA or LiPAA Slurries under Processing Conditions

This work explores the complex interplay between slurry aggregation, agglomeration, and conformation (i.e., shape) of poly(acrylic acid) (PAA)- and lithiated PAA-based silicon slurries as a function of the shear rate and the resulting slurry homogeneity. These values were measured by small-angle neutron scattering (SANS) and rheology-coupled ultra-SANS at conditions relevant to battery electrode casting. Different binder solution preparation methods, either a ball milling (BM) process or a planetary centrifugal mixing (PCM) process, dramatically modify the resulting polymer dynamics and organization around a silicon material. This is due to the different energy profiles of mixing where the more violent and higher energy PCM causes extensive breakdown and reformation of the binder, which is now likely in a branched conformation, while the lower energy BM results in simply lower-molecular weight linear polymers. In conclusion, the breakdown and reorganization of the polymer structure affect silicon slurry homogeneity, which affects subsequent electrode architecture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1996

Durable High-Density Data Storage

The focus ion beam (FIB) micromilling process for data storage provides a new non-magnetic storage method for archiving large amounts of data. The process stores data on robust materials such as steel, silicon, and gold coated silicon. The storage process was developed to provide a method to insure the long term storage life of data. We estimate that the useful life of data written on silicon or gold-coated silicon to be on the order of a few thousand years without the need to rewrite the data every few years. The process uses an ion beam to carve material from the surface, much like stone cutters in ancient civilizations removed material from stone. The deeper the information is carved into the media, the longer the expected life of the information. The process can record information in three formats: (1) binary at densities of 23 Gbits/square inch, (2) alphanumeric at optical or non-optical density, and (3) graphical at optical and non-optical density. The formats can be mixed on the same media; and thus, it is possible to record, in a human-viewable format, instructions that can be read using an optical microscope. These instructions provide guidance on reading the remaining higher density information.

Lamartine, Bruce C.↗
NASA NTRS1979

Potential for improved silicon ribbon growth through thermal environment control

The Ribbon-to-Ribbon (RTR) process for growth of silicon ribbon is described. This process involves the fabrication of a microcrystalline ribbon of silicon and subsequent grain size enhancement through a laser recrystallization process. The microribbon is obtained from a Thermal Expansion Shear Separation (TESS) process which allows a CVD layer of silicon to be separated from a temporary molybdenum substrate. Efforts to achieve increased solar cell efficiencies and higher area production rates have been problematical. Furnaces, which are necessary for thermal stress control, have been shown to contribute contamination to substrates resulting in degraded efficiencies. Recent results with a new furnace design indicate efficiencies in excess of 9% will be routine. Limitations to area throughput arise due to fundamental linear velocity limitations and width limitations necessary to prevent the occurrence of thermal buckling. Calculations are reported which show the influence of thermal profile on buckling tendencies, and a proposed electron beam technique is considered which promises high throughput with minimal buckling.

Gurtler, R. W.↗
DOE OSTI2026

Efficient Silicon Carbide (SiC) Fiber Manufacture: Continuous Processing of Novel Precursors via Modified Material Handling

General Atomics Electromagnetic Systems (GA-EMS) together with The Nonwovens Institute (NWI) and Harper International have executed on a development project to improve the production efficiency and reduce the production cost of silicon carbide (SiC) fiber – a critical material that advances US energy security and aerospace leadership. In the first budget period (BP1), the modified tow throughput (MTT) apparatus was developed, enabling fiber spinning in the form of loose coils rather than tightly packed spools (Figure 1) for batch processing of SiC fiber. This coil-based approach was proven to be capable of uniform fiber crosslinking and ceramic conversion, as well as demonstrating key process efficiencies while meeting the program fiber property targets.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1978

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2. LSSA project

The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.

Duffy, M. T.↗
NASA NTRS1983

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Spitzer, M. B.↗
NASA NTRS1980

The automated array assembly task of the low-cost silicon solar array project, phase 2

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Coleman, M. G.↗
NASA NTRS1981

Low-cost solar array project progress and plans

The considered project is part of the DOE Photovoltaic Technology and Market Development Program. This program is concerned with the development and the utilization of cost-competitive photovoltaic systems. The project has the objective to develop, by 1986, the national capability to manufacture low-cost, long-life photovoltaic arrays at production rates that will realize economies of scale, and at a price of less than $0.70/watt. The array performance objectives include an efficiency greater than 10% and an operating lifetime longer than 20 years. The objective of the silicon material task is to establish the practicality of processes for producing silicon suitable for terrestrial photovoltaic applications at a price of $14/kg. The large-area sheet task is concerned with the development of process technology for sheet formation. Low-cost encapsulation material systems are being developed in connection with the encapsulation task. Another project goal is related to the development of economical process sequences.

Callaghan, W. T.↗
DOE OSTI2022

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Process feasibility study in support of silicon material task 1

Initial results for gas thermal conductivity of silicon tetrafluoride and trichlorosilane are reported in respective temperature ranges of 25 to 400 C and 50 to 400 C. For chemical engineering analyses, the preliminary process design for the original silane process of Union Carbide was completed for Cases A and B, Regular and Minimum Process Storage. Included are raw material usage, utility requirements, major process equipment lists, and production labor requirements. Because of the large differences in surge tankage between major unit operations the fixed capital investment varied from $19,094,000 to $11,138,000 for Cases A and B, respectively. For the silane process the original flowsheet was revised for a more optimum arrangement of major equipment, raw materials and operating conditions. The initial issue of the revised flowsheet (Case C) for the silane process indicated favorable cost benefits over the original scheme.

Fang, C. S.↗
NASA NTRS1967

Thermal and bias cycling stabilizes planar silicon devices

Terminal burn-in or baking step time in the processing of planar silicon devices is extended to reduce their inversion tendencies. The collector-base junction of the device is also cyclically biased during the burn-in.

Harris, R. E.↗
NASA NTRS1981

Evaluation of silicon-on-ceramic material for low-cost solar cells

The silicon-on-ceramic (SOC) process produces thin layers of silicon on inexpensive ceramic substrates. The layers are produced by unidirectional solidification of molten silicon, and are polycrystalline. Solar cells made from SOC material have performed with a conversion efficiency of 10.5%. In connection with the objective to improve the efficiency of SOC solar cells, an investigation was conducted to assess the relative importance of grain boundaries and impurities. In order to separate the two effects, light-beam-induced current (LBIC) measurements of the short-circuit current were made using a micron-sized light beam from a monochromator. The LBIC measurements are closely related to solar cell performance since the technique identifies the various spatial and spectral contributions to solar cell current. On the basis of the obtained results, it appears that structural defects are more important than chemical defects in limiting the performance of present SOC solar cells.

Zook, J. D.↗
NASA NTRS1987

Screening Mechanically-Defective Solar Cells

Flexure test eliminates failure-prone wafers before further processing. Probability of cracking of silicon solar cells substantially reduced by mechanical proof testing of silicon wafers before further processing, according to report. Report based on study demonstrating weak wafers eliminated by subjecting all wafers in manufacturing batch to biaxial-flexure test.

Chen, C. P.↗
NASA NTRS1989

Products from lunar anorthite

Lunar anorthositic soil can be processed to produce oxygen, silicon, aluminum, and calcium. A process scheme starting with the beneficiation of the ore by magnetic separation and yielding the pure products is being developed. Simplifications in the process are possible if requirements regarding product purity and separation may be relaxed.

Anthony, Donald L.↗
NASA NTRS1982

Oxide Control for Silicon Crystal Growth

Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.

Wehrli, H. A. I.↗
NASA NTRS1983

Study of the photovoltaic effect in thin film barium titanate

The feasibility of making non-volatile digital memory devices of barium titanate, BaTiO3, that are integrated onto a silicon substrate with the required ferroelectric film produced by processing, compatible with silicon technology was examined.

Grannemann, W. W.↗
NASA NTRS2016

An Integrated Circuit for Radio Astronomy Correlators Supporting Large Arrays of Antennas

Radio telescopes that employ arrays of many antennas are in operation, and ever larger ones are being designed and proposed. Signals from the antennas are combined by cross-correlation. While the cost of most components of the telescope is proportional to the number of antennas N, the cost and power consumption of cross-correlationare proportional to N2 and dominate at sufficiently large N. Here we report the design of an integrated circuit (IC) that performs digital cross-correlations for arbitrarily many antennas in a power-efficient way. It uses an intrinsically low-power architecture in which the movement of data between devices is minimized. In a large system, each IC performs correlations for all pairs of antennas but for a portion of the telescope's bandwidth (the so-called "FX" structure). In our design, the correlations are performed in an array of 4096 complex multiply-accumulate (CMAC) units. This is sufficient to perform all correlations in parallel for 64 signals (N=32 antennas with 2 opposite-polarization signals per antenna). When N is larger, the input data are buffered in an on-chipmemory and the CMACs are re-used as many times as needed to compute all correlations. The design has been synthesized and simulated so as to obtain accurate estimates of the IC's size and power consumption. It isintended for fabrication in a 32 nm silicon-on-insulator process, where it will require less than 12mm2 of silicon area and achieve an energy efficiency of 1.76 to 3.3 pJ per CMAC operation, depending on the number of antennas. Operation has been analyzed in detail up to N = 4096. The system-level energy efficiency, including board-levelI/O, power supplies, and controls, is expected to be 5 to 7 pJ per CMAC operation. Existing correlators for the JVLA (N = 32) and ALMA (N = 64) telescopes achieve about 5000 pJ and 1000 pJ respectively usingapplication-specific ICs in older technologies. To our knowledge, the largest-N existing correlator is LEDA atN = 256; it uses GPUs built in 28 nm technology and achieves about 1000 pJ. Correlators being designed for the SKA telescopes (N = 128 and N = 512) using FPGAs in 16nm technology are predicted to achieve about 100 pJ.

ASIC↗
NASA NTRS1986

Process research of non-Czochralski silicon material

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Campbell, R. B.↗