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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Terahertz NDE for Metallic Surface Roughness Evaluation

Metallic surface roughness in a nominally smooth surface is a potential indication of material degradation or damage. When the surface is coated or covered with an opaque dielectric material, such as paint or insulation, then inspecting for surface changes becomes almost impossible. Terahertz NDE is a method capable of penetrating the coating and inspecting the metallic surface. The terahertz frequency regime is between 100 GHz and 10 THz and has a free space wavelength of 300 micrometers at 1 THz. Pulsed terahertz radiation, can be generated and detected using optical excitation of biased semiconductors with femtosecond laser pulses. The resulting time domain signal is 320 picoseconds in duration. In this application, samples are inspected with a commercial terahertz NDE system that scans the sample and generates a set of time-domain signals that are a function of the backscatter from the metallic surface. Post processing is then performed in the time and frequency domains to generate C-scan type images that show scattering effects due to surface non-uniformity.

Madaras, Eric I.↗
NASA NTRS2001

Power enhanced frequency conversion system

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Sanders, Steven↗
NASA NTRS2021

On Parametric Generation of Deep UV Light in Monolithic Cavities With Cubic Nonlinearity

Coherent ultra violet (UV) light has broad applications in optical atomic clocks and quantum computers. Since availability of semiconductor tunable monochromatic lasers is limited at short wavelengths, optical nonlinear processes are frequently used to produce the desirable radiation wavelength. Optical crystals with quadratic nonlinearity are promising for this purpose because of their transparency and high optical damage threshold. In this paper we discuss a possibility of generation of coherent deep UV light utilizing high quality factor (-Q) monolithic optical microcavities made of crystalline optical materials characterized with cubic nonlinearities. We show that the generation is feasible in spite of the relatively small cubic nonlinearities, due to the ultra-broad-band high optical transparency of the crystals and associated high-Q achievable in the cavities created out of the materials. We found that the birefringence as well as the tensor nature of the nonlinear susceptibility of the crystalline optical materials can simplify the phase matching of the nonlinear processes.

Matsko, A.B.↗
NASA NTRS1981

Forming electrical interconnections through semiconductor wafers

An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

Anthony, T. R.↗
NASA NTRS1980

Improved vapor-growth technique for III-V compound lasers

Vapor Growth technical of multilayered semiconductor devices based on elements in groups 3, 4, and 5 such as transmission photo cathodes and heterojunction lasers, reduces thermal decomposition and improves performance. In addition technique allows fabrication of GaP/GaAsP/InGaP, visable CW lasers through reduction of thermal decomposition.

Bujocchi, C. J.↗
NASA NTRS1986

Zone Refining by Laser

System developed for studying use of laser beam for zone-refining semiconductors and metals. Specimen scanned with focused CO2 laser beam in such way that thin zone of molten material moves along specimen sweeps impurities with it. Zone-melting system comprises microcomputer, laser, electromechanical and optical components for beam control, vacuum chamber that holds specimen, and sensor for determining specimen temperature.

Griner, D. B.↗
NASA NTRS1988

Diode laser-pumped solid-state lasers

Recently, interest in diode laser-pumped solid-state lasers has increased due to their advantages over flashlamp-pumped solid-state lasers. A historical overview is presented of semiconductor diode-pumped solid-state lasers beginning with work in the early 1960s and continuing through recent work on wavelength extension of these devices by laser operation on new transitions. Modeling of these devices by rate equations to obtain expressions for threshold, slope efficiency, and figures of merit is also given.

Fan, Tso Yee↗
NASA NTRS2000

Modeling of Optoelectronic Devices

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Li, Jian-Zhong↗
NASA NTRS2011

Improving Single Event Effects Testing Through Software

Radiation encountered in space environments can be damaging to microelectronics and potentially cause spacecraft failure. Single event effects (SEE) are a type of radiation effect that occur when an ion strikes a device. Single event gate rupture (SEGR) is a type of SEE that can cause failure in power transistors. Unlike other SEE rates in which a constant linear energy transfer (LET) can be used, SEGR rates sometimes require a non-uniform LET to be used to be accurate. A recent analysis shows that SEGR rates are most easily calculated when the environment is described as a stopping rate per unit volume for each ion species. Stopping rates in silicon for pertinent ions were calculated using the Stopping and Range of Ions in Matter (SRIM) software and CREME-MC software. A reference table was generated and can be used by others to calculate SEGR rates for a candidate device. Additionally, lasers can be used to simulate SEEs, providing more control and information at lower cost than heavy ion testing. The electron/hole pair generation rate from a laser pulse in a semiconductor can be related to the LET of an ion. MATLAB was used to generate a plot to easily make this comparison.

generation equation↗
NASA NTRS1998

Simulation of Transverse Modes in Vertical-Cavity Surface-Emitting Lasers

An approximation to the Maxwell-Semiconductor Bloch equations is solved for the transverse modes of vertical-cavity surface-emitting lasers. A finite-difference algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. Effects of pumping current and refractive index profiles will be investigated.

Goorjian, Peter M. P.↗
NASA NTRS1999

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Liu, Ansheng↗
NASA NTRS1984

High Speed Crystal Growth by Q-switched Laser Melting

The modification of the structural and electrical properties of semiconductors short radiation pulses obtained from Q-switched lasers is described. These modifications are accomplished by high heating and cooling rates. This processing revealed novel crystal growth and high speed resolidification phenomena. The behavior of semiconductor Si is analyzed. The annealing process typically employs short pulses of radiation in or near the visible region of the spectrum. The Q-switched ruby and Nd-YAG lasers are commonly used and these are sometimes mode locked to reduce the pulse length still further. Material to be annealed can be processed with a single large area radiation spot. Alternatively, a small radiation spot size can be used and a large sample area is covered by overlapping irradiated regions.

Cullis, A. G.↗
NASA NTRS2016

An Overview of Air-Breathing Propulsion Efforts for 2015 SBIR Phase I

NASA's Small Business Innovation Research (SBIR) program focuses on technological innovation by investing in development of innovative concepts and technologies to help NASA mission directorates address critical research needs for Agency programs. This report highlights 24 of the innovative SBIR 2015 Phase I projects that emphasize one of NASA Glenn Research Center's six core competencies-Air-Breathing Propulsion. The technologies cover a wide spectrum of applications such as hybrid nanocomposites for efficient aerospace structures; plasma flow control for drag reduction; physics-based aeroanalysis methods for open rotor conceptual designs; vertical lift by series hybrid power; fast pressure-sensitive paint systems for production wind tunnel testing; rugged, compact, and inexpensive airborne fiber sensor interrogators based on monolithic tunable lasers; and high sensitivity semiconductor sensor skins for multi-axis surface pressure characterization. Each featured technology describes an innovation and technical objective and highlights NASA commercial and industrial applications. This report provides an opportunity for NASA engineers, researchers, and program managers to learn how NASA SBIR technologies could help their programs and projects, and lead to collaborations and partnerships between the small SBIR companies and NASA that would benefit both.

aerospace structures↗
NASA NTRS1998

Design and Operational Characteristics of the Shuttle Coherent Wind Lidar

NOAA has identified the measurement of atmospheric wind velocities as one of the key unmet data sets for its next generation of sensing platforms. The merits of coherent lidars for the measurement of atmospheric winds from space platforms have been widely recognized; however, it is only recently that several key technologies have advanced to a point where a compact, high fidelity system could be created. Advances have been made in the areas of the diode-pumped, eye-safe, solid state lasers and room temperature, wide bandwidth, semiconductor detectors operating in the near-infrared region. These new lasers can be integrated into efficient and compact optical systems creating new possibilities for the development of low-cost, reliable, and compact coherent lidar systems for wind measurements. Over the past five years, the University of Alabama in Huntsville (UAH) has been working toward further advancing the solid state coherent lidar technology for the measurement of atmospheric winds from space. As part of this effort, UAH had established the design characteristics and defined the expected performance for three different proposed space-based instruments: a technology demonstrator, an operational prototype, and a 7-year lifetime operational instrument. SPARCLE is an ambitious project that is intended to evaluate the suitability of coherent lidar for wind measurements, demonstrate the maturity of the technology for space application, and provide a useable data set for model development and validation. This paper describes the SPARCLE instrument's major physical and environmental design constraints, optical and mechanical designs, and its operational characteristics.

Amzajerdian, Farzin↗
NASA NTRS1987

Semiconductor structure and devices

Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

Dinkel, Nancy A.↗
NASA NTRS2016

Integrated Broadband Quantum Cascade Laser

A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Mansour, Kamjou↗
NASA NTRS1987

Laser materials for the 0.67-microns to 2.5-microns range

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

Toda, Minoru↗