Symmetry-Breaking Charge Separation in the Solid State: Tetra(phenoxy)perylenediimide Polycrystalline Films
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Bandgap gradient is a proven approach for improving the open-circuit voltages (V OC s) in Cu(In,Ga)Se 2 and Cu(Zn,Sn)Se 2 thin-film solar cells, but has not been realized in Cd(Se,Te) thin-film solar cells, a leading thin-film solar cell technology in the photovoltaic market. Here, we demonstrate the realization of a bandgap gradient in Cd(Se,Te) thin-film solar cells by introducing a Cd(O,S,Se,Te) region with the same crystal structure of the absorber near the front junction. The formation of such a region is enabled by incorporating oxygenated CdS and CdSe layers. We show that the introduction of the bandgap gradient reduces the hole density in the front junction region and introduces a small spike in the band alignment between this and the absorber regions, effectively suppressing the nonradiative recombination therein and leading to improved VOCs in Cd(Se,Te) solar cells using commercial SnO 2 buffers. A champion device achieves an efficiency of 20.03% with a V OC of 0.863 V.
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Li-ion battery performance is strongly influenced by the 3D microstructure of its cathode particles. Cracks within these particles develop during calendaring and cycling, reducing connectivity but increasing reactive surface, making their impact on battery performance complex. Understanding these contradictory effects requires a quantitative link between particle morphology and battery performance. However, informative 3D imaging techniques are time-consuming, costly and rarely available, such that analyses often have to rely on 2D image data. This paper presents a novel stereological approach for generating virtual 3D cathode particles exhibiting crack networks that are statistically equivalent to those observed in 2D sections of experimentally measured particles. Consequently, 2D image data suffices for deriving a full 3D characterization of cracked cathodes particles. Such virtually generated 3D particles could serve as geometry input for spatially resolved electro-chemo-mechanical simulations to enhance our understanding of structure-property relationships of cathodes in Li-ion batteries.
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The exchange bias effect is the physical cornerstone of applications, such as spin valves, ultra-high-density data storage, and magnetic tunnel junctions. This work studied the room temperature exchange bias effect by constructing a Ni50Mn38Sb12−xGax alloy system with coexisting martensitic phase structures. The study found that the exchange bias effect shows a non-monotonic change with the variation of Ga composition at 300 K, and an obvious room temperature exchange bias effect appears in the alloys with coexisting phase structures of 4O and L10, which is due to the strong exchange coupling between ferromagnetic and antiferromagnetic. Further research on the exchange bias effect and temperature shows that the blocking temperature is 420 K, and the exchange bias can stably exist in a temperature range of ∼200 K around room temperature. This work provides a method to engineer exchange bias effects at room temperature.
Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.
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We report Monte Carlo studies of lattices of up to 10 5 skyrmions treated as particles with negative core energy and repulsive interaction obtained from a microscopic spin model. Temperature dependence of translational and orientational correlations has been investigated for different experimental protocols and initial conditions. Cooling the skyrmion liquid from a fully disordered high-temperature state results in the formation of a skyrmion polycrystal. A perfect skyrmion lattice prepared at T = 0, on raising temperature undergoes a first-order melting transition into a polyhexatic state that consists of large orientationally ordered domains of fluctuating shape. On the further increasing temperature, these domains decrease in size, leading to a fully disordered liquid of skyrmions.
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A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.
Graded absorbers devices with with CdSe 0.4 Te 0.6 (molar basis) and CdTe were fabricated. CdCl 2 treatment time, post-deposition CdCl 2 anneal time and thicknesses of CdSeTe and CdTe layers were varied. Photoluminescence and electrical measurements were performed on the fabricated devices. Results revealed that the individual thicknesses of CdSeTe and CdTe is critical to overall efficiency of the devices. Device fabricated on substrate with 0.5 μm CdSeTe, 3 μm CdTe with rest of process parameters kept unchanged, produced an efficiency of 20.14%. We report highest device efficiency among academia and research institutions.
Copper Gallium diselenide (CuGaSe 2 or CGS) thin film were deposited using a three-stage thermal co-evaporation process on molybdenum coated soda lime glass. Recrystallization was carried after the second stage by flashing AgBr for 2 mins. The change in morphology, structure and depth profile were studied after the treatment. SEM and XRD showed an increase in grain size and enhanced crystallinity. Here, a decrease in sodium profile after the treatment was observed through SIMS measurements. Overall, AgBr treatment of CGS seems to be promising for the improvement of film quality, which could help with enhanced device fabrication in the future.
The forming limit diagram (FLD) of high-purity niobium sheets used for the manufacturing of superconducting radiofrequency (SRF) cavities is presented. The Marciniak (in-plane) test was used with niobium blanks with a thickness of 1 mm and blank carriers of annealed oxygen-free electronic (OFE) copper. A high formability was measured, with an approximate true major strain at necking for plane strain of 0.44. The high formability of high-purity niobium is likely caused by its high strain rate sensitivity of 0.112. Plastic strain anisotropies (r-values) of 1.66, 1.00, and 2.30 were measured in the 0 deg, 45 deg, and 90 deg directions. However, stress–strain curves at a nominal strain rate of ~10 –3 s –1 showed similar mechanical properties in the three directions. Theoretical calculations of the forming limit curves (FLCs) were conducted using an analytical two-zone model. The obtained results indicate that the anisotropy and strain rate sensitivity of niobium affect its formability. The model was used to investigate the influence of strain rate on strains at necking. The obtained results suggest that the use of high-speed sheet forming should further increase the formability of niobium.