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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Encapsulation and backsheet adhesion metrology for photovoltaic modules

Photovoltaic modules are designed to operate for decades in terrestrial environments. However, mechanical stress, moisture, and ultraviolet radiation eventually degrade protective materials in modules, particularly their adhesion properties, eventually leading to reduced solar cell performance. Despite the significance of interfacial adhesion to module durability, currently there is no reliable technique for characterizing module adhesion properties. We present a simple and reproducible metrology for characterizing adhesion in photovoltaic modules that is grounded in fundamental concepts of beam and fracture mechanics. Using width-tapered cantilever beam fracture specimens, interfacial adhesion was evaluated on relevant interfaces of encapsulation and backsheet structures of new and 27-year-old historic modules. The adhesion energy, Gc [J/m 2 ], was calculated from the critical value of the strain energy release rate, G, using G = βP 2 , where β (a mechanical and geometric parameter of the fracture specimen) and P (the experimentally measured critical load) are constants. Under some circumstances where testing may result in cracking of brittle layers in the test specimen, measurement of the delamination length in addition to the critical load was necessary to determine G. Relative to new module materials, backsheet adhesion was 95% and 98% lower for historic modules that were exposed (operated in the field) and unexposed (stored on-site, but out of direct sunlight), respectively. Encapsulation adhesion was 87-94% lower in the exposed modules and 31% lower in the unexposed module. As a result, the metrology presented here can be used to improve module materials and assess long-term reliability.

14 SOLAR ENERGY↗
DOE OSTI2022

Photovoltaic module antireflection coating degradation survey using color microscopy and spectral reflectance

Abstract Commercial antireflective coatings (ARCs) on photovoltaic (PV) module glass can improve module power by 2.5%–3.0%, but their long‐term field performance requires additional study. In this paper, we investigate ARC performance on fielded modules using two nondestructive techniques: reflectance spectroscopy and RGB microscopy, finding a large variation in coating durability and performance. For new coatings, the fleet average nominal power enhancement is 2.8%. This power enhancement is observed to degrade at approximately −0.05%/year absolute over the first 8 years of fielding in arrays that are not regularly cleaned. Interferometry and imaging results imply that coating loss for these modules is due to slow chemical thinning of the initial 125 nm thick coating by 1.4 to 5.0 nm/year. Due to the physics of interference coatings, the performance loss is projected to accelerate as the coating is further thinned, resulting in a coating lifetime (time to 80% of initial performance) of 7.5 to 25 years. At the higher 5.0 nm/year coating loss rates, we estimate that −0.14%/year power degradation of the module can be attributed solely to ARC degradation over the first 20 years. Extreme coating loss is observed on some modules where after 8 years fielding, the coating can be completely removed with a single wet wipe with a lens tissue. A case study is also presented comparing ARC and noncoated modules installed at a single site in 2013. We find that the ARC modules have a 2.6% higher soiling power loss than the noncoated modules; this exceeds the ARC power enhancement of 2.4% and leads to the surprising conclusion that the ARC lowers production for modules in this location due to increased soiling. These results demonstrate that RGB microscopy is a powerful, field‐capable, and quantitative characterization technique for assessing degradation of PV module ARCs.

Karin, Todd↗
DOE OSTI2016

Calibration of photoelastic modulator based dichrometers: maintaining constant phase across the spectrum

Photoelastic modulators can alter the polarization state of a beam of ultraviolet, visible or infrared photons by means of periodic stress-induced differences in the refractive index of a transparent material that forms the optical element of the device and is isotropic in the absence of stress. Furthermore, they have found widespread application in instruments that characterize or alter the polarization state of a beam in fields as diverse as astronomy, structural biology, materials science and ultraviolet lithography for the manufacture of nano-scale integrated circuits. Measurement of circular dichroism, the differential absorption of left- and right circularly polarized light, and of strain-induced birefringence of optical components are major applications. Instruments using synchrotron radiation and photoelastic modulators with CaF 2 optical elements have extended circular dichroism measurements down to wavelengths of about 130 nm in the vacuum ultraviolet. Maintaining a constant phase shift between two orthogonal polarization states across a spectrum requires that the amplitude of the modulated stress be changed as a function of wavelength. For commercially available photoelastic modulators, the voltage that controls the amplitude of modulation required to produce a specified phase shift, which is a surrogate for the stress modulation amplitude, has been shown to be an approximately linear function of wavelength in the spectral region where the optical element is transparent. But, extrapolations of such straight lines cross zero voltage at a non-zero wavelength, not at zero-wavelength. For modulators with calcium fluoride and fused silica optical elements, the zero-crossing wavelength is always in the spectral region where the optical element of the modulator strongly absorbs the incident radiation, and at a wavelength less than the longest-wavelength apparent resonance deduced from experimental values of the refractive index fit to the Sellmeier equation. Using a model that relates the refractive indices of a stressed optical element to the refractive index of its unstressed state, an expression for the modulator control voltage was derived that closely fits the experimental data. Our result provides a theoretical rational for the apparently linear constant-phase programming voltage, and thus provides theoretical backing for the calibration procedure frequently used for these modulators. Lastly there are other factors that can influence the calibration of a photoelastic modulator, including temperature and atmospheric pressure, are discussed briefly.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Field-Aged Glass/Backsheet and Glass/Glass PV Modules: Encapsulant Degradation Comparison

Ethylene vinyl acetate (EVA) is the predominant encapsulant in crystalline-silicon photovoltaic (PV) modules; however, its degradation is a subject of major concern, which causes significant power loss under field conditions. This article presents a comparison of EVA degradation in field-aged PV modules with glass/backsheet (G/B) and glass/glass (G/G) architectures. Modulelevel characterization included UV fluorescence imaging and I-V measurements. Material analytical techniques, including colorimetry, differential scanning calorimetry, thermogravimetric analysis, Fourier transform infrared spectroscopy, and Raman spectroscopy, were performed to correlate the module performance parameters with EVA material properties. An intense EVA discoloration in G/G modules was observed, which was corroborated by higher module Isc and Pmax degradation rates compared with its counterpart G/B modules. Higher power degradation was accompanied by a significant increase in EVA crosslinking, vinyl acetate content, yellowness index, and presence of functional groups containing unsaturated moieties that are linked to degradation products of photothermal reaction, and a higher decrease in the degree of crystallinity. The absence of a polymeric backsheet in hermetically sealed G/G modules, which restricts photobleaching and enhances the entrapment of volatile acetic acid and other degradation by-products, plays a major role in causing higher EVA degradation in G/G modules. This article concludes that EVA might have been a good choice of an encapsulant for the G/B modules over the decades, but it may prove to be an inappropriate choice for the G/G modules because of potential degassing, corrosion, and/or discoloration issues. Ionomers or polyester-based encapsulants like polyolefins could be best suited for G/G modules as it appears to be a current trend in the industry.

14 SOLAR ENERGY↗
DOE OSTI2021

Computational Modeling of Photovoltaic Mini-Modules Undergoing Accelerated Stress Testing

A finite element model of a four-cell photovoltaic mini-module was developed and compared to experimental results from an accelerated stress test protocol in order to validate that computational models can accurately represent their physical counterparts when subjected to mechanical loading and to assess mini-module representativeness against full scale photovoltaic modules. Deflected shapes across the simulated mini-modules were compared to measured mini-module shapes when subjected to various pressure loads. Displaced mini-module shape results constrained to the experimental protocols of 0.4 mm and 1.1 mm of displacement at the mini-module center were compared to experimental results of full-size modules subjected to module qualification test load levels of 1.0 kPa and 2.4 kPa, to assess if the bending of mini-modules was representative of full-sized modules under the load. Temperature cycling was incorporated into the model to simulate the impacts of stress due to thermal expansion of the backsheet and cells. A preliminary uncertainty analysis was performed to show how variations in material properties and geometric parameters change the simulation results.

computational modeling↗
DOE OSTI2022

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Wang, Jiawei (ORCID:0000000257965220)↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring important upgrades to the Compact Muon Solenoid (CMS) to handle an increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.] (ORCID:0009000151↗
DOE OSTI2018

System and method for optimizing fundamental frequency modulation for a cascaded multilevel inverter

A system and a method for optimizing fundamental frequency modulation in a cascaded multilevel inverter (CMI) are provided. The CMI includes at least a first H-bridge module and a second H-bridge module connected in series with the first H-bridge module. The first H-bridge module is operated according to a first duty cycle and the second H-bridge module is operated according to a second duty cycle. The first duty cycle is greater than the second duty cycle. The first and second H-bridge modules are controlled utilizing fundamental frequency modulation. A portion of the first duty cycle is transferred to the second duty cycle thereby optimizing fundamental frequency modulation by at least improving power sharing between the first and second H-bridge modules and improving equalization of DC capacitor currents and voltage ripples while maintaining the same fundamental modulation to the output voltage waveform.

42 ENGINEERING↗
DOE OSTI2026

Quality Control of Silicon Sensor Modules for Particle Detectors

The High-Luminosity Large Hadron Collider (HL-LHC) will produce a higher rate of particle collisions than the current Large Hadron Collider (LHC), requiring significant upgrades to the Compact Muon Solenoid (CMS) to handle the increased amount of data. An important upgrade is the Phase-2 Outer Tracker Upgrade, which consists of 13,000 silicon sensor modules made of two parallel silicon sensors and readout electronics. These modules undergo careful quality control checks both during and after module assembly to ensure precise and reliable detector performance. This project focuses on precision testing for quality control of silicon sensor modules at Fermilab. Hands-on work includes visual inspection, current-voltage testing, module testing, and ultraviolet (UV) light exposure of modules showing abnormal current-voltage behavior. The ultraviolet exposure process improves the abnormal sensor readout data by placing the selected sensor side of the module directly under the UV light inside a controlled box. In addition to laboratory testing and ultraviolet experiments, I developed a Python-based data tool that connects to a module database and allows selected testing conditions and module information to be retrieved and displayed efficiently. These different testing procedures, experimental processes, and computational tools support the broader goal of identifying module issues and improving modules that will be used in the CMS Outer Tracker Phase-2 Upgrade.

Siddiqui, Hooriya [DuPage Coll.; Fermilab] (ORCID:↗
DOE OSTI2019

Model for Characterization and Optimization of Spectrally Selective Structures to Reduce the Operating Temperature and Improve the Energy Yield of Photovoltaic Modules

Many existing commercially manufactured photovoltaic modules include a cover layer of glass, commonly coated with a single layer antireflection coating (ARC) to reduce reflection losses. As many common photovoltaic cells, including c-Si, CdTe, and CIGS, decrease in efficiency with increasing temperature, a more effective coating would increase reflection of sub-bandgap light while still acting as an antireflection coating for higher energy photons. The sub-bandgap reflection would reduce parasitic sub-bandgap absorption and therefore reduce operating temperature. This reduction under realistic outdoor conditions would lead to an increase in annual energy yield of a photovoltaic module beyond what is achieved by a single layer ARC. However, calculating the actual increase in energy yield provided by this approach is difficult without using time-consuming simulation. Here, we present a time-independent matrix model which can quickly determine the percentage change in annual energy yield of a module with a spectrally selective mirror by comparison to a baseline module with no mirror. The energy benefit is decomposed into a thermal component from temperature reduction and an optical component from increased transmission of light above the bandgap and therefore increased current generation. Time-independent matrix model calculations are based on real irradiance conditions that vary with geographic location and module tilt angle. The absolute predicted values of energy yield improvement from the model are within 0.1% of those obtained from combined ray-tracing and time-dependent finite-element simulations and compute 1000x faster. Uncertainty in the model result is primarily due to effects of wind speed on module temperature. Optimization of the model result produces a 13-layer and a 20-layer mirror, which increase annual module energy yield by up to 4.0% compared to a module without the mirror, varying depending on the module location and tilt angle. Finally, we analyze how spectrally selective mirrors affect the loss pathways of the photovoltaic module.

14 SOLAR ENERGY↗
DOE OSTI2016

Potential-induced degradation in photovoltaic modules: a critical review

Potential-induced degradation (PID) has received considerable attention in recent years due to its detrimental impact on photovoltaic (PV) module performance under field conditions. Both crystalline silicon (c-Si) and thin-film PV modules are susceptible to PID. While extensive studies have already been conducted in this area, the understanding of the PID phenomena is still incomplete and it remains a major problem in the PV industry. Herein, a critical review of the available literature is given to serve as a one-stop source for understanding the current status of PID research. This article also aims to provide an overview of future research paths to address PID-related issues. This paper consists of three parts. In the first part, the modelling of leakage current paths in the module package is discussed. The PID mechanisms in both c-Si and thin-film PV modules are also comprehensively reviewed. The second part summarizes various test methods to evaluate PV modules for PID. The last part focuses on studies related to PID in the omnipresent p-type c-Si PV modules. The dependence of temperature, humidity and voltage on the progression of PID is examined. Preventive measures against PID at the cell, module and system levels are illustrated. Moreover, PID recovery in standard p-type c-Si PV modules is also studied. Most of the findings from p-type c-Si PV modules are also applicable to other PV module technologies.

14 SOLAR ENERGY↗
DOE OSTI2020

Activation Energy for Solder Bond Degradation: Thermal Cycling of Field-aged Modules at Multiple Upper Temperatures

The reliability of solder joints in the solar cell metallization-interconnect system influences the lifetime of photovoltaic modules. Two field-aged modules-one with Sn 62 Pb 36 Ag 2 solder at the solder joints (Solarex MSX 60), and the other with the standard Sn 60 Pb 40 solder (Siemens M55)-were subjected to a modified thermal cycling (TC) test of IEC 61215. Three sections in each module were maintained at 85 degrees C, 95 degrees C, and 105 degrees C during the 15-minute high temperature dwell time. Current equivalent to the module short-circuit current was injected through the module when the chamber temperature was above 25 degrees C to simulate regular field operation. This novel approach aims to induce thermomechanical fatigue (TMF) at the solder joints and intermetallic compound (IMC) formation at the metal/solder interfaces. The activation energy (E a ) for solder bond degradation was calculated based on the series resistance (R s ) increase in TC testing rather than power drop to avoid the effect of confounding variables. Module-level R s increase in MSX 60 module after TC800 cycles and in M55 module after TC400 cycles was 1.22% and 183.7%, respectively. The E a determined for the module with 2wt% Ag is 0.24 eV and for that with the standard solder is 0.27 eV. The solder bond degradation seems to have been driven by TMF rather than IMC formation for both modules.

14 SOLAR ENERGY↗
DOE OSTI2024

Modeling and ZVS Operation of the Isolated Modular Multilevel DC–DC Converter With a Unified Trapezoidal Wave Modulation

Here, this article introduces a unified trapezoidal wave (UTW) modulation scheme for the isolated modular multilevel dc–dc (IM2dc) converter, which consolidates multiple existing modulation strategies for the IM2dc converter, including the quasi-square wave (QSW) modulation, trapezoidal wave modulation, and sinusoidal wave modulation, into a unified framework. Furthermore, this article introduces the harmonic state-space (HSS) equations to model the IM2dc converter based on the UTW modulation method. The HSS model operates in the frequency domain, enabling it to circumvent the complexities associated with time-domain analysis and seamlessly integrate with the UTW modulation. This article proceeds to analyze the real and reactive power transfer characteristics of the IM2dc converter, as well as the power factor, considering the influence of multiple modulation parameters. Subsequently, it delves into the examination of zero voltage switching (ZVS) conditions for the IM2dc converter based on the UTW modulation and the HSS model. The complete ZVS boundaries of the IM2dc converter, taking various voltage ratios into account, are derived. This article also illustrates the effects of including harmonic orders in the modeling process, modulation parameters, and internal harmonic ripples on the ZVS boundaries. Finally, experimental validation of the analyses is conducted on a down-scaled prototype.

42 ENGINEERING↗
DOE OSTI2020

Defect Kinetics and Control for Module Reliability

Potential induced degradation is currently one of the most important module degradation mechanisms. It has been suggested that stacking faults decorated with sodium from the module glass are responsible for this effect and authors have also shown the reversibility of this effect upon reverse biasing of the module. The importance of sodium in the failure mechanism is clear, however, little is known regarding the factors that control its diffusion into the wafer, making it nearly impossible to predict the performance of a given module and engineer it to be better. Sodium migration from module glass into silicon cells and the resulting module degradation is a clear example of how defect kinetics can determine overall module performance and long-term reliability. To the detriment of the industry and its bankability, no quantitative models yet exist to predict defect-assisted module degradation, limiting the progress in improving reliability. In particular, the understanding of defect behavior under high electric fields, under stresses imparted by encapsulation or temperature, and under real operating conditions over long periods of time is a crucial gap in the current state-of-the-art. In this work we developed a Defect-Device-Degradation model to predict defect behavior and its impact on device performance over the module operational lifetime using experimentally-determined defect parameterizations. The validated model will provide a platform for manufacturing process optimization across input materials and architectures to avoid deleterious defects upstream and enable enhanced module robustness.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Comprehensive study of performance degradation of field‐mounted photovoltaic modules in India

Abstract The All India Survey of Photovoltaic Module Reliability 2014 is an enhanced version of the survey conducted in the previous year, with detailed characterization of PV modules including current‐voltage, infrared and electroluminescence imaging, visual inspection, insulation resistance test and interconnect breakage test. More than a thousand modules were inspected in the field and the main results of the survey are presented in this paper. The average P max degradation rate for the so‐called ‘good’ modules (Group X) is 1.33%/year which is higher than that commonly projected by manufacturers, and widely employed in financial calculations. Modules falling in the ‘not‐so‐good’ category (Group Y) show even higher degradation rates, and it is at least partly due to higher number of micro‐cracks in the modules, and increased degradation of the packaging materials like encapsulant, backsheet, etc. Modules in ‘Hot’ climates degrade faster than modules in the ‘Non‐Hot’ climates. Degradation in fill factor is the primary cause for performance degradation in the young modules (ages <5 years), whereas short‐circuit current degradation is the main contributor to power degradation in the older modules. Small installations (<100 kW p capacity) show higher degradation than large systems, which may be partly due to lack of proper due diligence by the owner at the time of procurement and installation.

Dubey, Rajiv↗
DOE OSTI2017

Evaluation and modeling of the potential effects of a module manufacturing anomaly

Photovoltaic lifetime predictions are in great demand, but are exceedingly difficult to achieve with uncertainties small enough to be useful. During the construction of photovoltaic modules, small unplanned variability in materials or processes can have profound effects on module durability. Thus, continual monitoring of production quality is needed. In the subject production run, module quality, as monitored by damp heat testing, revealed a subset of modules that were prone to higher degradation rates. An assessment of the potential long-term power loss and mitigation strategies was needed. To do this, modules were exposed to variable levels of humidity and temperature with periodic monitoring. The analysis takes into account the kinetics of the degradation and the spatially and temporally varying humidity content within the module during accelerated stress testing. This is an important aspect for extrapolating laboratory results to field exposure because moisture ingress is diffusion limited in most laboratory module tests but not limited in these fielded modules. This analysis predicted that although a solder flux induce degradation mechanism is significant in accelerated stress test, this is probably an artifact of a process with a very large acceleration factor that is not likely to be significant for deployed modules. The degradation mechanism affected a limited area around the tabbing helping to minimize the effect. Furthermore, three years after the system was commissioned, the fielded modules indeed show no significant power loss.

14 SOLAR ENERGY↗
DOE OSTI2025

Quality concerns caused by quality control — deformation of silicon strip detector modules in thermal cycling tests

The ATLAS experiment at the Large Hadron Collider (LHC) is currently preparing to replace its present Inner Detector (ID) with the upgraded, all-silicon Inner Tracker (ITk) for its High-Luminosity upgrade (HL-LHC). The ITk will consist of a central pixel tracker and the outer strip tracker, consisting of about 19,000 strip detector modules. Each strip module is assembled from up to two sensors, and up to five flexes (depending on its geometry) in a series of gluing, wirebonding and quality control steps. During detector operation, modules will be cooled down to temperatures of about -35 °C (corresponding to the temperature of the support structures on which they will be mounted) after being initially assembled and stored at room temperature. In order to ensure compatibility with the detector's operating temperature range, modules are subjected to thermal cycling as part of their quality control process. Ten cycles between -35 °C and +40 °C are performed for each module, with full electrical characterisation tests at each high and low temperature point. As part of an investigation into the stress experienced by modules during cooling, it was observed that modules generally showed a change in module shape before and after thermal cycling. This paper presents a summary of the discovery and understanding of the observed changes, connecting them with excess module stress, as well as the resulting modifications to the module thermal cycling procedure.

47 OTHER INSTRUMENTATION↗