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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

BiasMDP: Carrier lifetime characterization technique with applied bias voltage

A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon

This study demonstrates that the presence of a hydrogen source during fast-firing is critical to the regeneration of B-O defects and that is it not a pure thermally based mechanism or due to plasma exposure. Boron-doped p-type wafers were fired with and without hydrogen-rich silicon nitride (SiN{sub x}:H) films present during the fast-firing process. After an initial light-induced degradation step, only wafers fired with the SiN{sub x}:H films present were found to undergo permanent and complete recovery of lifetime during subsequent illuminated annealing. In comparison, wafers fired bare, i.e., without SiN{sub x}:H films present during firing, were found to demonstrate no permanent recovery in lifetime. Further, prior exposure to hydrogen-rich plasma processing was found to have no impact on permanent lifetime recovery in bare-fired wafers. This lends weight to a hydrogen-based model for B-O defect passivation and casts doubt on the role of non-hydrogen species in the permanent passivation of B-O defects in commercial-grade p-type Czochralski silicon wafers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Lifetime of inner-shell hole states of Ar (2p) and Kr (3d) using equation-of-motion coupled cluster method

Auger decay is an efficient ultrafast relaxation process of core-shell or inner-shell excited atom or molecule. Generally, it occurs in femto-second or even atto-second time domain. Direct measurement of lifetimes of Auger process of single ionized and double ionized inner-shell state of an atom or molecule is an extremely difficult task. In this paper, we have applied the highly correlated complex absorbing potential-equation-of-motion coupled cluster (CAP-EOMCC) approach which is a combination of CAP and EOMCC approach to calculate the lifetime of the states arising from 2p inner-shell ionization of an Ar atom and 3d inner-shell ionization of Kr atom. We have also calculated the lifetime of Ar{sup 2+}(2p{sup −1}3p{sup −1}) {sup 1}D, Ar{sup 2+}(2p{sup −1}3p{sup −1}) {sup 1}S, and Ar{sup 2+}(2p{sup −1}3s{sup −1}) {sup 1}P double ionized states. The predicted results are compared with the other theoretical results as well as experimental results available in the literature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy

We present a magneto-Raman study on high-quality single-layer graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride by a dry transfer technique. By analyzing the Raman D, G, and 2D peaks, we find that the structural quality of the samples is comparable with state-of-the-art exfoliated graphene flakes. From B-field dependent Raman measurements, we extract the broadening and associated lifetime of the G peak due to anharmonic effects. Furthermore, we determine the decay width and lifetime of Landau level (LL) transitions from magneto-phonon resonances as a function of laser power. At low laser power, we find a minimal decay width of 140 cm{sup −1} highlighting the high electronic quality of the CVD-grown graphene. At higher laser power, we observe an increase of the LL decay width leading to a saturation, with the corresponding lifetime saturating at a minimal value of 18 fs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Determination of deep trapping lifetime in organic semiconductors using impedance spectroscopy

A method for determining deep trapping lifetime in semiconductors using an impedance spectroscopy is proposed. A unique feature of the method is the simultaneous determination of the drift mobility and deep trapping lifetime in thin-film electronic devices. The validity of the proposed method is examined by numerical calculation. Simultaneous determinations of the drift mobility and deep trapping lifetime using this method are demonstrated in prototypical hole transporting organic semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Combined fluorescence and phosphorescence lifetime imaging

We present a lifetime imaging technique that simultaneously records the fluorescence and phosphorescence lifetime images in confocal laser scanning systems. It is based on modulating a high-frequency pulsed laser synchronously with the pixel clock of the scanner, and recording the fluorescence and phosphorescence signals by multidimensional time-correlated single photon counting board. We demonstrate our technique on the recording of the fluorescence/phosphorescence lifetime images of human embryonic kidney cells at different environmental conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for In{sub x}Ga{sub 1−x}As grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

An application of characteristic function in order to predict reliability and lifetime of aeronautical hardware

The forecasting of reliability and life of aeronautical hardware requires recognition of many and various destructive processes that deteriorate the health/maintenance status thereof. The aging of technical components of aircraft as an armament system proves of outstanding significance to reliability and safety of the whole system. The aging process is usually induced by many and various factors, just to mention mechanical, biological, climatic, or chemical ones. The aging is an irreversible process and considerably affects (i.e. reduces) reliability and lifetime of aeronautical equipment. Application of the characteristic function of the aging process is suggested to predict reliability and lifetime of aeronautical hardware. An increment in values of diagnostic parameters is introduced to formulate then, using the characteristic function and after some rearrangements, the partial differential equation. An analytical dependence for the characteristic function of the aging process is a solution to this equation. With the inverse transformation applied, the density function of the aging of aeronautical hardware is found. Having found the density function, one can determine the aeronautical equipment’s reliability and lifetime. The in-service collected or the life tests delivered data are used to attain this goal. Coefficients in this relationship are found using the likelihood function.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2012

THE LIFETIME AND POWERS OF FR IIs IN GALAXY CLUSTERS

We have identified and studied a sample of 151 FR IIs found in brightest cluster galaxies (BCGs) in the MaxBCG cluster catalog with data from FIRST and NVSS. We have compared the radio luminosities and projected lengths of these FR IIs to the projected length distribution of a range of mock catalogs generated by an FR II model and estimate the FR II lifetime to be 1.9 Multiplication-Sign 10{sup 8} yr. The uncertainty in the lifetime calculation is a factor of two, primarily due to uncertainties in the intracluster medium (ICM) density and the FR II axial ratio. We furthermore measure the jet power distribution of FR IIs in BCGs and find that it is well described by a log-normal distribution with a median power of 1.1 Multiplication-Sign 10{sup 37} W and a coefficient of variation of 2.2. These jet powers are nearly linearly related to the observed luminosities, and this relation is steeper than many other estimates, although it is dependent on the jet model. We investigate correlations between FR II and cluster properties and find that galaxy luminosity is correlated with jet power. This implies that jet power is also correlated with black hole mass, as the stellar luminosity of a BCG should be a good proxy for its spheroid mass and therefore the black hole mass. Jet power, however, is not correlated with cluster richness, nor is FR II lifetime strongly correlated with any cluster properties. We calculate the enthalpy of the lobes to examine the impact of the FR IIs on the ICM and find that heating due to adiabatic expansion is too small to offset radiative cooling by a factor of at least six. In contrast, the jet power is approximately an order of magnitude larger than required to counteract cooling. We conclude that if feedback from FR IIs offsets cooling of the ICM, then heating must be primarily due to another mechanism associated with FR II expansion.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

DUST DESTRUCTION RATES AND LIFETIMES IN THE MAGELLANIC CLOUDS

The dust budget in galaxies depends on the rate at which dust grains are created in different stellar sources and destroyed by interstellar shocks. Because of their extensive wavelength coverage, proximity, and nearly face-on geometry, the Magellanic Clouds (MCs) provide a unique opportunity to study these processes in great detail. In this paper, we use the complete sample of supernova remnants (SNRs) in the MCs to calculate the lifetimes and destruction efficiencies of silicate and carbon dust. We find dust lifetimes of 22 ± 13 Myr (30 ± 17 Myr) for silicate (carbon) grains in the LMC, and 54 ± 32 Myr (72 ± 43 Myr) for silicate (carbon) grains in the SMC. The corresponding dust destruction rates are 2.3 × 10{sup –2} M {sub ☉} yr{sup –1} (5.9 × 10{sup –3} M {sub ☉} yr{sup –1}) and 3.0 × 10{sup –3} M {sub ☉} yr{sup –1} (5.6 × 10{sup –4} M {sub ☉} yr{sup –1}) for silicate (carbon) grains in the LMC and SMC, respectively. The significantly shorter lifetimes in the MCs, as compared to the Milky Way, are explained as the combined effect of their lower total dust mass and preferentially higher dust-to-gas (D2G) mass ratios in the vicinity of the SNRs. We find that the maximum dust injection rates by asymptotic giant branch stars and core collapse supernovae are an order of magnitude lower than the dust destruction rates by the SNRs, suggesting that most of the dust may be reconstituted in dense molecular clouds. We also discuss the dependence of the dust destruction rate on the local D2G mass ratio, ambient gas density, and metallicity, as well as the application of our results to other galaxies and dust evolution models.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

TR-LIF LIFETIME MEASUREMENTS AND HFR+CPOL CALCULATIONS OF RADIATIVE PARAMETERS IN VANADIUM ATOM (V I)

Radiative lifetimes of 79 levels belonging to the 3d {sup 3}4s4p, 3d {sup 4}4p, 3d {sup 3}4s5p, 3d {sup 4}5p, and 3d {sup 3}4s4d configurations of V I with energy from 26,604.807 to 46,862.786 cm{sup –1} have been measured using time-resolved laser-induced fluorescence (TR-LIF) spectroscopy in laser-produced plasma. The lifetime values reported in this paper are in the range of 3.3-494 ns, and the uncertainties of these measurements are within ±10%. A good agreement was obtained with previous data. HFR+CPOL calculations have been performed and used to combine the calculated branching fractions with the available experimental lifetimes to determine semi-empirical transition probabilities for 784 V I transitions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

The role of defect charge, crystal chemistry, and crystal structure on positron lifetimes of vacancies in oxides

Density functional theory based positron lifetime (PL) calculations for cation and oxygen monovacancies in a range of oxides—hematite, magnetite, hercynite, and alumina—have been conducted to compare the impact of defect chemistry and crystal structure on the predicted lifetimes. The role of defect charge state has also been examined. A comparison across the same type of crystalline structure but different composition shows that oxygen vacancies only induce a slight increase in the positron-electron overlap and thus barely modify the PL as compared to the bulk. A much more substantial increase of PL is observed for cation monovacancies, regardless of crystal structure or the elemental nature of the vacancy, which we ascribe to an enhanced localization of charge density around the vacant site. The structural and compositional richness of the oxide leads to longer defect PLs, with defected hercynite exhibiting the longest PLs. The charge state of cation monovacancies modifies only by a small percentage the positron localization, relegating to secondary importance the metal defect's oxidation state in modifying the lifetime of positrons within vacancy traps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Excited state lifetime modulation in semiconductor nanocrystals for super-resolution imaging

Abstract We report on proof of principle measurements of a concept for a super-resolution imaging method that is based on excitation field density-dependent lifetime modulation of semiconductor nanocrystals. The prerequisite of the technique is access to semiconductor nanocrystals with emission lifetimes that depend on the excitation intensity. Experimentally, the method requires a confocal microscope with fluorescence-lifetime measurement capability that makes it easily accessible to a broad optical imaging community. We demonstrate with single particle imaging that the method allows one to achieve a spatial resolution of the order of several tens of nanometers at moderate fluorescence excitation intensity.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Restrictions on the lifetime of sterile neutrinos from primordial nucleosynthesis

We analyze the influence of sterile neutrinos with the masses in the MeV range on the primordial abundances of Helium-4 and Deuterium. We solve explicitly the Boltzmann equations for all particle species, taking into account neutrino flavour oscillations and demonstrate that the abundances are sensitive mostly to the sterile neutrino lifetime and only weakly to the way the active-sterile mixing is distributed between flavours. The decay of these particles also perturbs the spectra of (decoupled) neutrinos and heats photons, changing the ratio of neutrino to photon energy density, that can be interpreted as extra neutrino species at the recombination epoch. We derive upper bounds on the lifetime of sterile neutrinos based on both astrophysical and cosmological measurements of Helium-4 and Deuterium. We also demonstrate that the recent results of Izotov and Thuan [1], who find 2σ higher than predicted by the standard primordial nucleosynthesis value of Helium-4 abundance, are consistent with the presence in the plasma of sterile neutrinos with the lifetime 0.01–2 seconds.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Strongest model-independent bound on the lifetime of Dark Matter

Dark Matter is essential for structure formation in the late Universe so it must be stable on cosmological time scales. But how stable exactly? Only assuming decays into relativistic particles, we report an otherwise model independent bound on the lifetime of Dark Matter using current cosmological data. Since these decays affect only the low ℓ multipoles of the CMB, the Dark Matter lifetime is expected to correlate with the tensor-to-scalar ratio r as well as the curvature Ω{sub k}. We consider two models, including r and r+Ω{sub k} respectively, versus data from Planck, WMAP, WiggleZ and Baryon Acoustic Oscillations, with or without the BICEP2 data (if interpreted in terms of primordial gravitational waves). This results in a lower bound on the lifetime of CDM given by 160 Gyr (without BICEP2) or 200 Gyr (with BICEP2) at 95% confidence level.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2011

Lifetime measurement of the cesium 6P{sub 3/2} state using ultrafast laser-pulse excitation and ionization

We report a precision measurement of the cesium 6P{sub 3/2} excited-state lifetime. Two collimated, counterpropagating thermal Cs beams cross perpendicularly to femtosecond pulsed laser beams. High timing accuracy is achieved from having excitation and ionization laser pulses which originate from the same mode-locked laser. Using pulse selection we vary the separation in time between excitation and ionization laser pulses while counting the ions produced. We obtain a Cs 6P{sub 3/2} lifetime of 30.460(38) ns, which is a factor of two improvement from previous measurements and with an uncertainty of 0.12%, is one of the most accurate lifetime measurements on record.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2011

Ab initio study of permanent electric dipole moment and radiative lifetimes of alkaline-earth-metal--Li molecules

We calculate permanent electric dipole moments (PDMs), as well as spontaneous and black body lifetimes, of alkaline-earth-metal-Li (AEM-Li) ultracold polar molecules to study anisotropic long-range dipole-dipole interactions in a single quantum state. We obtain potential energy curves for the {sup 2} {Sigma} ground state of MgLi, CaLi, SrLi, and BaLi molecules at the coupled cluster singles and doubles with partial triples [CCSD(T)] level of electron correlation. Calculated spectroscopic constants for the isotopes: {sup 24}Mg{sup 7}Li, {sup 40}Ca{sup 7}Li, {sup 88}Sr{sup 7}Li, and {sup 138}Ba{sup 7}Li, show good agreement with available theoretical and experimental results. We obtain PDM curves using finite field perturbation theory at the CCSD(T) level. We find that AEM-Li molecules have moderate values of PDM at the equilibrium bond distance (MgLi: 0.90 D, CaLi: 1.15 D, SrLi: 0.33 D, and BaLi: -0.42 D) and hence might be suitable candidates for the proposed study in a single quantum state. Radiative lifetime calculations of the {nu} = 0 state ({sup 24}Mg{sup 6}Li: 22 s, {sup 40}Ca{sup 6}Li: 39 s, {sup 88}Sr{sup 6}Li: 380 s, and {sup 138}Ba{sup 6}Li: 988 s) are found to be longer than the typical time scale associated with ultracold experiments with these molecules. The uncertainty in the lifetime calculations are estimated to be less than 10%.

74 ATOMIC AND MOLECULAR PHYSICS↗