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NASA NTRS2008

NASA Tech Briefs, September 2008

Topics covered include: Nanotip Carpets as Antireflection Surfaces; Nano-Engineered Catalysts for Direct Methanol Fuel Cells; Capillography of Mats of Nanofibers; Directed Growth of Carbon Nanotubes Across Gaps; High-Voltage, Asymmetric-Waveform Generator; Magic-T Junction Using Microstrip/Slotline Transitions; On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz; Group-III Nitride Field Emitters; HEMT Amplifiers and Equipment for their On-Wafer Testing; Thermal Spray Formation of Polymer Coatings; Improved Gas Filling and Sealing of an HC-PCF; Making More-Complex Molecules Using Superthermal Atom/Molecule Collisions; Nematic Cells for Digital Light Deflection; Improved Silica Aerogel Composite Materials; Microgravity, Mesh-Crawling Legged Robots; Advanced Active-Magnetic-Bearing Thrust- Measurement System; Thermally Actuated Hydraulic Pumps; A New, Highly Improved Two-Cycle Engine; Flexible Structural-Health-Monitoring Sheets; Alignment Pins for Assembling and Disassembling Structures; Purifying Nucleic Acids from Samples of Extremely Low Biomass; Adjustable-Viewing-Angle Endoscopic Tool for Skull Base and Brain Surgery; UV-Resistant Non-Spore-Forming Bacteria From Spacecraft-Assembly Facilities; Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy; Simplified Modeling of Oxidation of Hydrocarbons; Near-Field Spectroscopy with Nanoparticles Deposited by AFM; Light Collimator and Monitor for a Spectroradiometer; Hyperspectral Fluorescence and Reflectance Imaging Instrument; Improving the Optical Quality Factor of the WGM Resonator; Ultra-Stable Beacon Source for Laboratory Testing of Optical Tracking; Transmissive Diffractive Optical Element Solar Concentrators; Delaying Trains of Short Light Pulses in WGM Resonators; Toward Better Modeling of Supercritical Turbulent Mixing; JPEG 2000 Encoding with Perceptual Distortion Control; Intelligent Integrated Health Management for a System of Systems; Delay Banking for Managing Air Traffic; and Spline-Based Smoothing of Airfoil Curvatures.

Source record↗

NASA NTRS1985

Characterization of erosion of metallic materials under cavitation attack in a mineral oil

Cavitation erosion and erosion rates of eight metallic materials representing three crystal structures were studied. The erosion experiments were conducted with a 20-kHz ultrasonic magnetostrictive oscillator in a viscous mineral oil. The erosion rates of the metals with an fcc matrix were 10 to 100 times higher than that of an hop-matrix titanium alloy. The erosion rates of iron and molybdenum, with bcc matrices, were higher than that of the titanium alloy but lower than those of those of the fcc materials. Studies with scanning electron microscopy indicated that the cavitation pits were initially formed at the grain boundaries and precipitates and that the pits formed at the junction of grain boundaries grew faster than the others. Transcrystalline craters formed by cavitation attack over the surface of grains and roughened the surfaces by multiple slip and twinning. Surface roughness measurements showed that the pits that formed over the grain boundaries deepened faster than pits. Computer analysis revealed that a geometric expression describes the nondimensional erosion curves during the time period 0.5 t (sub 0) t 2.5 t (sub 0), where t (sub 0) is the incubation period. The fcc metals had very short incubation periods; the titanium alloy had the longest incubation period.

Rao, B. C. S.↗

NASA NTRS1991

High-temperature superconducting superconductor/normal metal/superconducting devices

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Foote, M. C.↗

NASA NTRS1993

The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

Rosenfeld, D.↗

NASA NTRS1994

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Weinberg, I.↗

NASA NTRS2021

Hypersonic Boundary-Layer Instabilities over Ogive-Cylinder Models

Computational investigations of an ogive-cylinder geometry with varying nosetips at zero degrees angle of attack are presented. The model geometry and conditions are selected to match experiments conducted in the Air Force Research Laboratory (AFRL) Mach 6 Ludwieg Tube. Five nosetips of interest were selected for the computational studies herein: two sharp ogives, two blunt ogives, and one hemispherical nosetip. Computations are performed at a freestream Reynolds number of 7.01 × 10 6 m -1 . Each sharp and blunt tip ogives had a 14 and 28 degree version for the tip angles. A cylindrical section follows the nosetip, resulting in a meter long model such as in the experiments. The laminar flow solutions are analyzed. The boundary-layer-edge properties and the velocity and temperature profiles are compared across streamwise locations aft of the ogive-cylinder junction. The blunt nosetips induce an entropy layer that envelopes the boundary-layer profiles. Modal stability analysis identifies most amplified frequencies corresponding to Mack’s second modes that agree with experimental results for the sharp tips. Similar to the experimental measurements based on wall-mounted pressure sensors, no unstable modes are found for the blunt models. Nonmodal analysis revealed a broadband set of disturbances present for the blunter tips, in agreement with experimental observations. Flow perturbation contours of most amplified planar and oblique disturbances are shown to qualitatively match wind tunnel Schlieren images, with a switch from rope-like to elongated structures, i.e., from high frequency Mack’s second modes to low frequency Mack’s first modes, as the nosetip angle is increased for the sharp tip, and from boundary-layer to entropy-layer disturbances as the bluntness is increased.

Boundary layer transition↗

NASA NTRS2022

Hypersonic Boundary-Layer Instabilities over Ogive-Cylinder Models

Boundary layer transition↗

NASA NTRS2005

Electrical and Optical Property of Ferroelectric BaTiO3:Eu

We studied various electrical and optical properties of Europium (1 atomic %) incorporated BaTiO3 film on n-Si(100) substrate. The thin film structure was analyzed by X-ray diffraction. Film thickness and optical refractive index were measured with an ellipsometer. P-E hysteresis measurement shows the remnant polarization of 37 micro C/sq cm in BaTiO3:Eu film. C-V measurements on the pure BaTiO3 film show recovery of capacitance across sweeping voltage ranges with a narrow transition zone due to the polarization change. On the other hand, C-V and I-V measurements on the BaTiO3:Eu film show that Europium incorporation increases positively charged states in the BaTiO3 layer such that BaTiO3:Eu/n-Si interface behaves like a leaky p-n junction.

Park, Yeonjoon↗

NASA NTRS2005

Strain Sensitivity in Single Walled Carbon Nanotubes for Multifunctional Materials

Single walled carbon nanotubes represent the future of structural aerospace vehicle systems due to their unparalleled strength characteristics and demonstrated multifunctionality. This multifunctionality rises from the CNT's unique capabilities for both metallic and semiconducting electron transport, electron spin polarizability, and band gap modulation under strain. By incorporating the use of electric field alignment and various lithography techniques, a single wall carbon nanotube (SWNT) test bed for measurement of conductivity/strain relationships has been developed. Nanotubes are deposited at specified locations through dielectrophoresis. The circuit is designed such that the central, current carrying section of the nanotube is exposed to enable atomic force microscopy and manipulation in situ while the transport properties of the junction are monitored. By applying this methodology to sensor development a flexible single wall carbon nanotube (SWNT) based strain sensitive device has been developed. Studies of tensile testing of the flexible SWNT device vs conductivity are also presented, demonstrating the feasibility of using single walled HiPCO (high-pressure carbon monoxide) carbon nanotubes as strain sensing agents in a multi-functional materials system.

Heath, D. M.↗

NASA NTRSDate not supplied

Automatic Boundary-Layer Adaptation of Structured Grids in VULCAN-CFD

In supersonic and hypersonic flow computations, well-resolved boundary layers are essential for accurate quantification of surface heating and transition prediction, particularly via linear stability analysis. Grid design for hypersonic flows with shocks, boundary-layer separation, and/or complex mean flow features incorporating spanwise/azimuthal inhomogeneities is a difficult issue. In comparison to a manual grid adaptation procedure, an autonomous grid adaptation technique offers significant improvements in computing time and solution quality. The VULCAN-CFD solver already includes a validated procedure for automatic adaption of structured grids to the bow shock. The present focus is on implementing an automatic boundary-layer adaptation capability in VULCAN-CFD that adapts structured, multiblock grids to both the bow shock and the boundary layer at the same time. The boundary-layer adaptation algorithm allows the user to specify the number of cells within the boundary layer, along with the input parameters used for detecting the edge of the boundary layer, namely, the variable used in the edge detection criterion,the edge detection method, the detection direction, and the relaxation factor used during the morphing of the grid. The algorithm automatically distributes grid points along the wall-normal direction to achieve a smooth variation in grid spacing from the edge of the boundary layer to a"junction" location within the outer part of the grid. Illustrative results are presented for three different high-speed configurations: the two-dimensional flow over a cylinder at Mach 17.6 and unit Reynolds number of Re=0.38x10^6 m^-1, the axisymmetric flow over a cone-cylinder-flare model at Mach 6.0 and Re = 10.5×10^6 m^-1, and the three-dimensional flow over a blunt, 7-degree half-angle cone at 5-degree angle of attack in a Mach 9.79 flow with Re = 17.1×10^6 m^-1. The automated boundary-layer adaptation is shown to provide an adequate grid topology that is aligned with the bow shock in the outer part of the grid and also resolves the viscous boundary-layer region close to the surface.

boundary layer transition↗

NASA NTRS1983

Brief characterization of germanium junction field effect transistors (FETs) at 77, 4, and 1.8 K

In the case of modern infrared focal planes, one of the major problems is related to the noise contribution of the cooled, impedance-matching device used as the preamplifier stage in the detector electronics system. An ideal preamp device should have the low-noise advantages of a buried-channel device and operate isothermally with the low-temperature detector array. The Ge JFET might provide this ideal device. A testing program with Ge JFETs is discussed. It is concluded that germanium JFETs offer an attractive alternative for cryogenic preamplifier designs. They operate well with high transconductance and low noise at LHe temperatures. It is believed that these devices point the way for the development of large, integrated-array, long wavelength, infrared focal planes which incorporate germanium detectors, germanium load resistors, and germanium preamplifiers within the same monolithic structure.

Arentz, R. F.↗

NASA NTRS1975

Internal optical losses in very thin CW heterojunction laser diodes

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

Butler, J. K.↗

NASA NTRS2007

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗

NASA NTRS2017

Experimental Visualizations of a Generic Launch Vehicle Flow Field: Time-Resolved Shadowgraph and Infrared Imaging

Time-Resolved shadowgraph and infrared (IR) imaging were performed to investigate off-body and on-body flow features of a generic, 'hammer-head' launch vehicle geometry previously tested by Coe and Nute (1962). The measurements discussed here were one part of a large range of wind tunnel test techniques that included steady-state pressure sensitive paint (PSP), dynamic PSP, unsteady surface pressures, and unsteady force measurements. Image data was captured over a Mach number range of 0.6 less than or equal to M less than or equal to 1.2 at a Reynolds number of 3 million per foot. Both shadowgraph and IR imagery were captured in conjunction with unsteady pressures and forces and correlated with IRIG-B timing. High-speed shadowgraph imagery was used to identify wake structure and reattachment behind the payload fairing of the vehicle. Various data processing strategies were employed and ultimately these results correlated well with the location and magnitude of unsteady surface pressure measurements. Two research grade IR cameras were positioned to image boundary layer transition at the vehicle nose and flow reattachment behind the payload fairing. The poor emissivity of the model surface treatment (fast PSP) proved to be challenging for the infrared measurement. Reference image subtraction and contrast limited adaptive histogram equalization (CLAHE) were used to analyze this dataset. Ultimately turbulent boundary layer transition was observed and located forward of the trip dot line at the model sphere-cone junction. Flow reattachment location was identified behind the payload fairing in both steady and unsteady thermal data. As demonstrated in this effort, recent advances in high-speed and thermal imaging technology have modernized classical techniques providing a new viewpoint for the modern researcher

Shadowgraph↗

NASA NTRS1984

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Spitzer, M. B.↗

NASA NTRS1994

Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗

NASA NTRS1996

Nonenzymatic, template-directed ligation of oligoribonucleotides is highly regioselective for the formation of 3'-5' phosphodiester bonds

We have found that nonenzymatic, template-directed ligation reactions of oligoribonucleotides display high selectivity for the formation of 3'-5' rather than 2'-5' phosphodiester bonds. Formation of the 3'-5'-linked product is favored regardless of the metal ion catalyst or the leaving group, and for several different ligation junction sequences. The degree of selectivity depends on the leaving group: the ratio of 3'-5'- to 2'-5'-linked products was 10-15:1 when the 5'-phosphate was activated as the imidazolide, and 60-80:1 when the 5'-phosphate was activated by the formation of a 5'-triphosphate. Comparison of oligonucleotide ligation reactions with previously characterized single nucleotide primer extension reactions suggests that the strong preference for 3'-5'-linkages in oligonucleotide ligation is primarily due to occurence of ligation within the context of an extended Watston-Crick duplex. The ability of RNA to correctly self-assemble by template-directed ligation is an intrinsic consequence of its chemical structure and need not be imposed by an external catalyst (i.e., an enzyme polymerase); RNA therefore provides a reasonable structural basis for a self-replicating system in a prebiological world.

Non-NASA Center↗

NASA NTRS2010

Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.

Zhao, Kai↗