A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
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NASA has identified structural health monitoring and damage detection and verification as critical needs in multiple technology roadmaps. The sensor systems can be customized for detecting location, damage size, and depth, with velocity options and can be designed for particular environments for monitoring of impact or physical damage to a structure. The damage detection system has been successfully demonstrated in a harsh environment and remote integration tested over 1000 miles apart. Multiple applications includes: Spacecraft and Aircraft; Inflatable, Deployable and Expandable Structures; Space Debris Monitoring; Space Habitats; Military Shelters; Solar Arrays, Smart Garments and Wearables, Extravehicular activity (EVA) suits; Critical Hardware Enclosures; Embedded Composite Structures; and Flexible Hybrid Printed Electronics and Systems. For better implementation and infusion into more flexible architectures, important and improved designs in advancing embedded software and GUI interface, and increasing flexibility, modularity, and configurable capabilities of the system are currently being carried out.
Flexibility can bring a new dimension to state-of-the-art electronics, such as rollable displays and integrated circuit systems being transformed into more powerful resources. Flexible electronics are typically hosted on polymeric substrates. Such substrates can be bent and rolled up, but cannot be independently fixed at the rigid perpendicular position necessary to realize rollable display-integrated gadgets and electronics. A reversibly bistable material can assume two stable states in a reversible way: flexibly rolled state and independently unbent state. Such materials are used in cycling and biking safety wristbands and a variety of ankle bracelets for orthopedic healthcare. They are often wrapped around an object with high impulsive force loading. Here, we study the effects of cumulative impulsive force loading on thinned (25 μm) flexible silicon-based n-channel metal–oxide–semiconductor field-effect transistor devices housed on a reversibly bistable flexible platform. We found that the transistors have maintained their high performance level up to an accumulated 180 kN of impact force loading. The gate dielectric layers have maintained their reliability, which is evidenced by the low leakage current densities. Also, we observed low variation in the effective electron mobility values, which manifests that the device channels have maintained their carrier transport properties.
An opto-electronic probe system is disclosed. The probe system has a probe element including at least one microelectrode, with the probe element being implantable in tissue of an anatomy to receive electrical signals generated within the anatomy. A subsystem is included for at least one of generating excitation signals to be used in stimulating the anatomy, or for receiving electrical signals received from the anatomy. An interface portion is included which is in communication with the subsystem for communicating at least one of electrical signals or optical signals indicative of the electrical signals received by the microelectrode.
Assembly of custom-made electronic equipment and multipurpose commercial electronic equipment commonly found in electronics-development laboratories facilitates generation and modification of timing pattern signals for control of array detectors. Designed to serve as flexible electronic array-detector-testing apparatus configured via software; timing patterns created, stored, and changed easily. Assembly prepared for experimental evaluation of new detector design in much less time and less expense than necessary to construct special circuits to generate all timing patterns to be tried on new design.
In this paper, we have successfully utilized a facile hydrothermal method to prepare crystalline Zn 2 SnO 4 nanoparticles (ZSO NPs) and applied them as an efficient electron-transporting layer (ETL) via a simple room-temperature solution process for perovskite solar cells (PVSCs). The superior semiconducting properties of this ZSO-based ETL enable an efficient (PCE: 17.7%) inverted p–i–n PVSC to be fabricated with respectable ambient stability. It can retain over 90% of its original PCE after being stored under ambient conditions for 14 days under 30 ± 5% relative humidity. Moreover, it also facilitates the fabrication of efficient conventional n–i–p PVSCs with a PCE of –14.5% and –11.4% achieved on a glass/ITO rigid substrate and PEG/ITO flexible substrate, respectively.
Wearable technology is the new frontier in the tech industry. To be wearable, a device must be flexible, durable, and bio-compatible. As all electronics, these devices are going to consume energy. Currently, the world uses lithium ion batteries for its energy needs. The demand for lithium has become so high that the world reserves are threatening to run out far quicker than expected. This makes it imperative that we find a suitable alternative material to keep up with current power demands and, while we are at it, address the drive for low-cost, flexible power sources that the flexible electronics industry will surely need. The answer to this need can be potentially found in Triboelectric Nanogenerators (TENGs). Not only are TENGs flexible, they are also low-cost and stand-alone power sources, meaning that they have no need for bulky or rigid batteries. TENGs work based on the triboelectrification effect.
With the rise of additively manufactured electronics, the importance of thin, flexible printed batteries has increased for shape-conformal electronics. Traditionally, battery cells such as industry-standard lithium-ion batteries, have been rigid and therefore unable to conform to time-variant surfaces such as smart cards/RFID devices, disposable battery-powered skin patches, foldable electronic devices, and IoT nodes. Aligned with the effort to advance technologies on printed electronics for habitat systems and advanced manufacturing, this proof-of-concept will focus on printing a 50 mAh Zn-Ag battery implementing a DIW Technique. After prototype manufacturing, electrical and environmental testing on the flexible battery cell will be conducted to the evaluate energy and power density over 50 charge cycles under standard atmosphere conditions. The project aims to provide PCB designers, fabricators, and assemblers an integrated battery package to eliminate external batteries, external wiring and connectors, and conformational complexity. Potential end uses of the printed battery process will be within Martian and lunar habitat systems, Gateway, and surface vehicles, or aerial robots where space and geometry is a restriction.
The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.
Understanding the nature of ionic hydration at a fundamental level has eluded scientists despite intense interest for nearly a century. In particular, the microscopic origins of the asymmetry of ion solvation thermodynamics with respect to the sign of the ionic charge remains a mystery. Here, we determine the response of accurate quantum mechanical water models to strong nanoscale solvation forces arising from excluded volumes and ionic electrostatic fields. This is compared to the predictions of two important limiting classes of classical models of water with fixed point changes, differing in their treatment of “lone pair” electrons. Using the quantum water model as our standard of accuracy, we find that a single fixed classical treatment of lone pair electrons cannot accurately describe solvation of both apolar and cationic solutes, emphasizing the need for a more flexible description of local electronic effects in solvation processes. However, we explicitly show that all water models studied respond to weak long-ranged electrostatic perturbations in a manner that follows macroscopic dielectric continuum models, as would be expected. Here, we emphasize the importance of these findings in the context of realistic ion models, using density functional theory and empirical models, and discuss the implications of our results for quantitatively accurate reduced descriptions of solvation in dielectric media.
Heuslers are a prominent family of multifunctional materials that includes semiconductors, half metals, topological semimetals, and magnetic superconductors. Owing to their same crystalline structure, yet quite different electronic properties and flexibility in chemical composition, Heusler-based heterostructures can be designed to show intriguing properties at the interface. Using electronic structure calculations, we show that two-dimensional electron or hole gases (2DEG or 2DHG) form at the interface of half-Heusler (HH) semiconductors without any chemical doping. We use CoTiSb/NiTiSn as an example, and show that the 2DEG at the TiSb/Ni(001) termination and the 2DHG at the Co/TiSn(001) termination are intrinsic to the interface, and hold rather high charge densities of 3 × 10 14 carriers/cm 2 . These excess charge carriers are tightly bound to the interface plane and are fully accommodated in transition-metal d subbands. Furthermore, the formation of 2DEG and 2DHG are not specific to the CoTiSb/NiTiSn system; a list of combinations of HH semiconductors that are predicted to form 2DEG or 2DHG is provided based on band alignment, interface termination, and lattice mismatch.
NASAs future exploration missions focus on the manned exploration of the Moon, Mars, and beyond, which will rely heavily on the development of a reliable communications infrastructure from planetary surface-to-surface, surface-to-orbit, and back to Earth. Flexible antennas are highly desired in many scenarios. Active phased array antennas (active PAAs) with distributed control and processing electronics at the surface of an antenna aperture offer numerous advantages for radar communications. Large-area active PAAs on flexible substrates are of particular interest in NASA s space radars due to their efficient inflatable package that can be rolled up during transportation and deployed in space. Such an inflatable package significantly reduces stowage volume and mass. Because of these performance and packaging advantages, large-area inflatable active PAAs are highly desired in NASA s surface-to-orbit and surface-to-relay communications. To address the issues of flexible electronics, a room-temperature printing process of active phased-array antennas on a flexible Kapton substrate was developed. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proved feasible for the PAA system. This innovation is a new type of fully inkjet-printable, two-dimensional, high-frequency PAA on a flexible substrate at room temperature. The designed electronic circuit components, such as the FET switches in the phase shifter, metal interconnection lines, microstrip transmission lines, etc., are all printed using a special inkjet printer. Using the developed technology, entire 1x4, 2x2, and 4x4 PAA systems were developed, packaged, and demonstrated at 5.3 GHz. Several key solutions are addressed in this work to solve the fabrication issues. The source/drain contact is developed using droplets of silver ink printed on the source/drain areas prior to applying CNT thin-film. The wet silver ink droplets allow the silver to wet the CNT thin-film area and enable good contact with the source and drain contact after annealing. A passivation layer to protect the device channel is developed by bonding a thin Kapton film on top of the device channel. This film is also used as the media for transferring the aligned CNT thin-film on the device substrate. A simple and cost-effective technique to form multilayer metal interconnections on flexible substrate is developed and demonstrated. Contact vias are formed on the second substrate prior to bonding on the first substrate. Inkjet printing is used to fill the silver ink into the via structure. The printed silver ink penetrates through the vias to contact with the contact pads on the bottom layer. It is then annealed to form a good connection. One-dimensional and two-dimensional PAAs were fabricated and characterized. In these circuits, multilayer metal interconnects were used to make a complete PAA system.
Strongly correlated electronic molecules open the way for strong coupling between charge, spin, and lattice degrees of freedom to enable interdisciplinary fields, such as molecular electronic switches and plasmonics, spintronics, information storage, and superconducting circuits. However, despite exciting computational predictions and promising advantages to prepare flexible geometries, the electron correlation effect in molecules has been elusive. In this paper, the electron correlation effects of molecular plasmonic films are reported to uncover their coupling of charge, spin, lattice, and orbital for the switchable metal-to-insulator transition under external stimuli, at which the simultaneous transition occurs from the paramagnetic, electrical, and thermal conducting state to the diamagnetic, electrical, and thermal insulating state. In addition, density functional theory calculation and spectroscopic studies are combined to provide the mechanistic understanding of electronic transitions and molecular plasmon resonance observed in molecular conducting films. The self-assembled molecular correlated conductor paves the way for the next generation integrated micro/nanosystems.
A flexible, nanocomposite substrate for maximizing light outcoupling efficiencies of organic light-emitting diodes (OLEDs) is introduced. In depth investigation is performed on designing the integrated strategy based on considerations of surface conductivity, microcavity tuning, and internal light scattering. The resulting nanocomposite substrate consists of silver nanowires as the electrode and a high-index polymer layer and a light-scattering layer for light extraction. It is able to outcouple both the waveguide and the substrate modes, two modes accounting for significant losses in OLED device efficiency. With enhanced light outcoupling, white OLEDs subsequently fabricated on the nanocomposite substrates demonstrate performance metrics of 107 lm W -1 power efficiency and 49% external quantum efficiency at 1000 cd m -2 . Thus, the nanocomposite substrate is fabricated by solution processes at low temperatures for potentially low manufacturing cost.