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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Ultimate brightness of a medium-energy synchrotron light source at operational beam intensity

Synchrotron light sources are key instruments of modern science, providing unique opportunities for groundbreaking studies in diverse scientific disciplines and driving innovation in numerous scientific and technological fields. Fourth-generation light sources provide unprecedented capabilities in imaging, spectroscopy and diffraction techniques. Ultimate brightness is the key to advancing to a smaller scale, faster response, and higher data measurement and processing rate. The brightness is primarily determined by the electron beam emittance and energy spread at operational intensity. A common feature of fourth-generation synchrotrons is the short length of the electron bunches combined with a very small transverse beam size. Consequently, the high particle density leads to strong collective effects that significantly increase the emittance and limit the achievable brightness at operational beam intensity. In this article, we summarize our studies of the emittance and brightness scaled with the beam energy and intensity, taking into account the effects of intrabeam scattering, beam-impedance interaction and bunch lengthening provided by higher-harmonic RF systems to identify optimal combinations of machine and beam parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Abstract Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Re-Analysis of DARHT Axis 2 S4 Magnet Sweep Measurements

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility provides flash radiography capabilities using two electron Linear Induction Accelerators (LIA’s). Understanding fundamental properties of the electron beams is essential to optimizing spot size and dose for radiography. This work describes distribution measurements of a single-kicked electron beam (16.5MeV, 1.7kA, 60ns) at a location downstream at imaging station C on DARHT Axis 2. The beam at station C is focused by the S4 solenoid located upstream. The beam distribution is measured by imaging optical transition radiation (OTR) from electrons striking a 51-µm thick titanium foil. This data and analysis were originally published by Ekdahl. The results here are a re-analysis of the asymmetric halo emittance contribution as compared to the emittance resulting from the FWHM of the distribution. This is accomplished using xtr2 fits to the data which include non-linear magnetic field effects in S4. Also examined are the calculated S4 spherical aberration contributions to the emittance using xtr.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Fractal Nanostructured Solar Selective Surfaces for Next Gen Concentrating Solar Power (Final Report)

This project reports a novel coating with enhanced solar absorptance and reduced thermal emittance with high efficiency at elevated temperature for next-generation concentrated solar power (CSP) plants, with targeted operating temperatures around 750°C. Highly textured single and multimetallic oxide coatings were electrodeposited onto Inconel substrate by systematically varying the composition and process parameters. The optimized coating exhibited micro-to-nano structures designed to match the wavelengths in the visible region of the solar spectrum. These structures facilitate resonant absorption of solar radiation, significantly boosting solar absorption and accommodating thermal stress during high temperature exposure. A high solar absorptance exceeding 0.985 and a low thermal emittance below 0.5, yielding a thermal efficiency near 95%, was achieved for the optimized coatings without any anti-reflective overcoat, that remained robust after 750 h of isothermal exposure to 750°C in air. The coatings are also robust to severe mechanical and environmental stressors. The innovative approach presented in this study demonstrates the potential for tailoring air-stable solar absorber coatings to achieve high absorption, low emittance, and excellent high-temperature endurance, meeting the rigorous demands of next-generation CSP systems. A technoeconomic analysis reveals the economic advantage of the coatings for Gen3 CSP installations in different geographical zones globally.

14 SOLAR ENERGY↗
DOE OSTI2023

Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd 3 P 2 Quantum Dots

Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown In x Ga 1-x As quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd 3 P 2 QDs possess substantial trap emission with radiative times >10 1 ns. Surface passivation through shell growth or coordination of Lewis acids is shown to accelerate the NIR emission from Cd 3 P 2 QDs by decreasing the amount of trap emission. This finding brings us one step closer to the application of colloidally synthesized QDs as quantum emitters.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials

Bilayers of ferromagnetic and heavy metal nanolayers excited with femtosecond laser pulses emit subpicosecond bursts of electromagnetic radiation with spectral frequencies up to several THz. We fabricated such spintronic THz emitters containing various ferromagnetic materials with vastly different magnetic remanence, saturation magnetization, and coercive fields. In all cases, the THz amplitude versus magnetic-field dependence follows the independently measured magnetization hysteresis loops and the THz polarization direction is perpendicular to the sample’s magnetization M, both consistent with the inverse spin Hall effect (ISHE) as the physical origin. The mV-level signals of observed THz transient also favor the ISHE over the anomalous Nernst effect (ANE). The M(T) variation governs the temperature dependence of the THz generation. Emitters with weakly remanent ferromagnets are magnetic-field tunable, while moderately and strongly remanent ferromagnets, once magnetized, allow intense THz generation even without an external field, nevertheless exhibiting low susceptibility to magnetic perturbations if the hysteresis loop is square. Hence, exploiting the magnetic properties of the ferromagnetic layer enables tailoring of weakly temperature-dependent spintronic THz emitters. Finally, we explored the applicability of perovskite oxide materials such as La-Sr-Mn-O (LSMO) for THz transient generation. We detected weak (<40-μV amplitude) THz emissions from both LSMO/Au and pure LSMO nanostructures with no sign flip upon the sample reversal. Furthermore, we excluded the ISHE and believe it was likely governed by the ANE in the thick-film regime, although we cannot exclude the transient demagnetization mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Erbium-Implanted WS 2 Flakes with Room-Temperature Photon Emission at Telecom Wavelengths

Optically addressable spin impurities in crystals along with device engineering provide an attractive route to realizing quantum technologies in the solid state, but reconciling disparate emitter and host material constraints for a given target application is often challenging. Rare-earth ions in two-dimensional (2D) materials could mitigate this problem given the atomic-like transitions of the emitters and the versatile nature of van der Waals systems. Here we combine ion implantation, confocal microscopy, and ab initio calculations to examine the photon emission of Er-doped WS 2 flakes. Optical spectroscopy reveals narrow, long-lived photoluminescence lines in the telecom band, which we activate after low-temperature thermal annealing. Spectroscopic and polarization-selective measurements show a uniform response across the ensemble, while the fluorescence brightness remains mostly unchanged with temperature, suggesting nonradiative relaxation channels are inefficient. Our results create opportunities for novel solid state devices coupling 2D-hosted, telecom-band emitters to photonic heterostructures separately optimized for photon manipulation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

A Hybrid Molecular–Nanophotonic Platform for On-Chip Cavity Quantum Electrodynamics and Collective Interactions

We present a hybrid solid-state cavity quantum electrodynamics (QED) platform that integrates a high density of coherent organic molecules with high-quality-factor nanophotonics. Thin anthracene crystals doped with dibenzoterrylene (DBT) are mechanically transferred onto prefabricated silicon nitride photonic crystal cavities, preserving both the cavity quality and molecular coherence. This approach decouples emitter synthesis from nanofabrication, providing a pathway for integrating other types of emitters. The high density of molecular emitters results in up to ten molecules being coupled to a single cavity. By tuning pairs of molecules into resonance within a single cavity mode, we observe cavity-mediated interactions in both dispersive and dissipative regimes. Furthermore, these results establish an accessible route to deterministic on-chip single- and multiphoton sources.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Self-aligned heterogeneous quantum photonic integration

Integrated quantum photonics holds significant promise for scalable photonic quantum information processing, quantum repeaters, and quantum networks, but its development is hindered by the mismatch between materials hosting high-quality quantum emitters and those compatible with mature photonic technologies. Heterogeneous integration offers a potential solution to this challenge, yet practical implementations have been limited by inevitable insertion losses at material interfaces. Here, we present a self-aligned heterogeneous quantum photonic integration approach that enables near-unity coupling efficiency at the interface. To showcase our approach, we demonstrate Purcell enhancement of a silicon vacancy (SiV) center in diamond induced by a heterogeneous photonic crystal cavity defined by titanium dioxide (TiO 2 ), as well as optical spin control and readout via a TiO 2 photonic circuit. We further show that, when combined with inverse photonic design, our approach enables efficient and broadband collection of single photons from a color center into a heterogeneous waveguide. Our approach is not restricted to SiV centers or TiO 2 ; it has the potential to be broadly applied to integrate diverse solid-state quantum emitters with thin-film photonic devices where conformal deposition is possible. Together, these results establish a practical route to scalable quantum photonic integrated circuits that combine high-quality quantum emitters with technologically mature photonic platforms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Observation of site-controlled localized charged excitons in CrI3/WSe2 heterostructures

Abstract Isolated spins are the focus of intense scientific exploration due to their potential role as qubits for quantum information science. Optical access to single spins, demonstrated in III-V semiconducting quantum dots, has fueled research aimed at realizing quantum networks. More recently, quantum emitters in atomically thin materials such as tungsten diselenide have been demonstrated to host optically addressable single spins by means of electrostatic doping the localized excitons. Electrostatic doping is not the only route to charging localized quantum emitters and another path forward is through band structure engineering using van der Waals heterojunctions. Critical to this second approach is to interface tungsten diselenide with other van der Waals materials with relative band-alignments conducive to the phenomenon of charge transfer. In this work we show that the Type-II band-alignment between tungsten diselenide and chromium triiodide can be exploited to excite localized charged excitons in tungsten diselenide. Leveraging spin-dependent charge transfer in the device, we demonstrate spin selectivity in the preparation of the spin-valley state of localized single holes. Combined with the use of strain-inducing nanopillars to coordinate the spatial location of tungsten diselenide quantum emitters, we uncover the possibility of realizing large-scale deterministic arrays of optically addressable spin-valley holes in a solid state platform.

42 ENGINEERING↗
DOE OSTI2024

Programmable nanowrinkle-induced room-temperature exciton localization in monolayer WSe2

Abstract Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate strain-localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. At cryogenic temperatures, antibunched emission is observed, confirming that the nanocone-induced strain is sufficiently large for the formation of quantum emitters. At 300 K, detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from the fine wrinkles, and show that the states can be tightly confined to regions <10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Proximity-induced chiral quantum light generation in strain-engineered WSe 2 /NiPS 3 heterostructures

Quantum light emitters capable of generating single photons with circular polarization and non-classical statistics could enable non-reciprocal single-photon devices and deterministic spin–photon interfaces for quantum networks. To date, the emission of such chiral quantum light relies on the application of intense external magnetic fields, electrical/optical injection of spin-polarized carriers/excitons or coupling with complex photonic metastructures. Here we report the creation of free-space chiral quantum light emitters via the nanoindentation of monolayer WSe 2 /NiPS 3 heterostructures at zero external magnetic field. These quantum light emitters emit with a high degree of circular polarization (0.89) and single-photon purity (95%), independent of pump laser polarization. In this study, scanning diamond nitrogen-vacancy microscopy and temperature-dependent magneto-photoluminescence studies reveal that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe 2 monolayer and the out-of-plane magnetization of defects in the antiferromagnetic order of NiPS 3 , both of which are co-localized by strain fields associated with the nanoscale indentations.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Enhanced power density in zero-vacuum-gap thermophotovoltaic devices

Thermophotovoltaic (TPV) devices, which convert infrared thermal radiation from a hot emitter into electricity, hold great promise for applications in energy storage and waste heat recovery. While recent advancements have developed TPV devices with high efficiency, much less attention has been focused on improving the power density. Current TPV methods face challenges in significantly boosting the power density using emitters at very high temperatures (>2000 °C) or using complex, costly architectures such as near-field TPV. Here, we present the first experimental demonstration of a novel far-field TPV concept called “zero-vacuum-gap TPV” that eliminates the vacuum or gas-filled gap in conventional designs. By incorporating a high-index, infrared-transparent, and thermally insulating fused quartz spacer, we achieved a two-fold increase in power density compared to the far-field counterpart under identical conditions. Notably, in our experiment, the zero-vacuum-gap far-field design transforms a less-optimized, low-power-density far-field device into one with one of the highest power densities reported at moderate temperatures (700–1100 °C). Moreover, our measurements using a graphite emitter surpass the blackbody limit for gap-integrated far-field devices and match the performance of near-field TPV devices with an ultrathin 200-nm gap. Our findings suggest that zero-vacuum-gap TPV offers potential for cost-effective, scalable manufacturing using current technologies. Additionally, our modelling predicts that further power enhancements over one order of magnitude are possible with other spacer materials.

14 SOLAR ENERGY↗
DOE OSTI2024

Resonance plasmonic coupling: selective enhancement of band edge emission over trap state emission of CdSe quantum dots

The photoluminescence properties of quantum dots (QDs) are often enhanced by eliminating surface trap states through chemical methods. Alternatively, a physical approach is presented here for improving photoluminescence purity in QDs by employing frequency-specific plasmon resonance coupling. Emitter-bound plasmonic hybrids are designed by electrostatically binding negatively charged QDs in water to positively charged gold nanoparticles having a thin polymer coating. Herein, two types of QDs are used: (i) bare CdSe, which exhibits both band edge and trap state emission, and (ii) CdSe overcoated with a ZnS shell (CdSe/ZnS) devoid of trap state emission. Tuning the extinction spectrum of the plasmonic system to match the band edge emission of CdSe enables the selective enhancement of band edge emission over trap state emission. Excellent match in the extinction spectrum of the gold nanoparticle with both, experimentally calculated photoluminescence enhancement factor and theoretically calculated radiative rate enhancement signifies the role of frequency-specific plasmon resonance coupling. Plasmon-coupled photoluminescence of CdSe/ZnS is further investigated by varying the number density of emitter on the surface of plasmonic nanoparticle. An enhancement in the photoluminescence is observed at a lower emitter density of CdSe/ZnS and the photoluminescence enhancement factor closely follows the plasmon resonance. However, photoluminescence quenching occurs with an increase in CdSe/ZnS due to plasmon-assisted nonradiative energy transfer between nearby QDs, as indicated by a red shift in the PL maximum. These studies establish that resonance plasmonic coupling is a convenient physical strategy for tuning the intrinsic photoluminescence properties of QDs for various optoelectronic applications.

Paul, Livin↗
DOE OSTI2021

Development of a Fast-Spectrum Self-Powered Neutron Detector for Molten Salt Experiments in the Versatile Test Reactor

The self-powered neutron detector (SPND) is a widely used flux monitor in thermal nuclear reactors. Although this is a mature technology, the current state of the art is tuned for a thermal neutron spectrum, so many of the devices currently in use lack sensitivity to fast neutrons. Because current in SPNDs is produced through nuclear reactions with the neutron flux inside a reactor, sensitivity in SPNDs is determined by the neutron cross section of the neutron-sensitive portion of the detector, termed the emitter. This neutron cross section drops by orders of magnitude between thermal and fast neutron energies for many emitters in currently used SPNDs, with a corresponding drop in current from the detector. This paper discusses efforts to develop a fast-spectrum self-powered neutron detector (FS-SPND) that is sensitive to neutrons with energies ranging from 0.025 eV up to 1 MeV. An in-depth analysis of Evaluated Nuclear Data File (ENDF)/B-VII.1 neutron-capture cross sections was performed, and four new materials were identified that are suitable emitter candidates for use in measuring fast neutrons. All four materials are stable mid-shell nuclei in the region between doubly magic 132Sn and 208Pb. Each candidate was simulated with the Geant4 Monte Carlo simulation toolkit to optimize overall detector efficiency.

Goetz, Callie↗
DOE OSTI2020

Upgrading the LANSCE accelerator with a SNS RF-driven H− ion source

The LANSCE accelerator is currently powered by a filament-driven, biased converter-type H− ion source that operates at 10%, the highest plasma duty factor for this type of source, using only ∼2.2 SCCM of H2. The ion source needs to be replaced every 4 weeks, which takes up to 4 days. The measured negative beam current of 12–16 mA falls below the desired 24 mA acceptance of the LANCSE accelerator. The SNS (Spallation Neutron Source) RF-driven, H− ion source injects ∼50 mA of H− beam into the SNS accelerator at 60 Hz with a 6% duty factor and an availability of >99.5% but requires ∼30 SCCM of H2. Up to 7 A h of H− have been produced during the 14-weeks-long source service cycles, which is unprecedented for small emittance, high-current, pulsed H− ion sources. The emittance of the SNS source is slightly smaller than the emittance of the LANSCE source. The SNS source also features unrivaled low Cs consumption and can be installed and started up in <12 h. LANSCE and SNS are working toward the use of SNS H− ion sources on the LANSCE accelerator because they could (a) fill the LANSCE accelerator to its capacity, (b) decrease the source replacement time by a factor of up to 7, and (c) increase source lifetime by a factor of about 4. This paper discusses some of the challenges that emerge when trying to match a different H− source into an existing injector with significantly different characteristics and operating regimes.

Stockli, Martin P.↗