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Improved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.
This paper describes a transmit / receive (T/R) module for a large L-band space based radar active phased array being developed at JPL. Electrical performance and construction techniques are described, with emphasis on the former. The T/R modules have a bandwidth of more than 80 MHz centered at 1260MHz and support dual, switched polarizations. Phase and amplitude are controlled by a 6-bit phase shifter and a 6-bit attenuator, respectively. The transmitter power amplifier generates 2.4 W into a nominal 50 ohm load with 36% overall efficiency. The receiver noise figure is 4.4 dB including all front-end losses. The module weighs 32 g and has a footprint of 8 cm x 4.5 cm. Fourteen of these T/R modules were fabricated at the JPL Pick-and-Place Facility and were tested using a computer-controlled measurement facility developed at JPL. Calibrated performance of this set of T/R modules is presented and shows good agreement with design predictions.
An electrodeless, pulsed, inductively coupled thruster has several advantages over current electric propulsion designs. The efficiency of a pulsed inductive thruster is dependent upon the pulse characteristics of the device. Therefore, these thrusters are throttleable over a wide range of thrust levels by varying the pulse rate without affecting the thruster efficiency. In addition, by controlling the pulse energy and the mass bit together, the ISP of the thruster can also be varied with minimal efficiency loss over a wide range of ISP levels. Pulsed inductive thrusters will work with a multitude of propellants, including ammonia. Thus, a single pulsed inductive thruster could be used to handle a multitude of mission needs from high thrust to high ISP with one propulsion solution that would be variable in flight. A conical pulsed inductive lab thruster has been built to study this form of electric propulsion in detail. This thruster incorporates many advantages that are meant to enable this technology as a viable space propulsion technology. These advantages include incorporation of solid state switch technology for all switching needs of the thruster and pre-ionization of the propellant gas prior to acceleration. Pre-ionizing will significantly improve coupling efficiency between drive and bias fields and the plasma. This enables lower pulse energy levels without efficiency reduction. Pre-ionization can be accomplished at a small fraction of the drive pulse energy.
Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.
The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.
Pollution-free flight is one of NASA s goals for the 21st century. One method of approaching that goal is to use hydrogen-fueled aircraft that use fuel cells or turbogenerators to produce electric power to drive electric motors that turn the aircraft s propulsive fans or propellers. Hydrogen fuel would likely be carried as a liquid, stored in tanks at hydrogen s boiling point of 20.5 K (-422.5 F). The liquid hydrogen could provide essentially free refrigeration to cool electric motor windings before being used as fuel. Either superconductivity or the low resistance of pure copper or aluminum in liquid hydrogen could be applied to greatly increase electric current density and motor power density.
On March 29, 2011, NASA s Mercury Surface, Space Environment, Geochemistry and Ranging (MESSENGER) spacecraft beamed a milestone image to Earth: the first photo of Mercury taken from orbit around the solar system s innermost planet. (MESSENGER is also the first spacecraft to orbit Mercury.) Like most of NASA s deep space probes, MESSENGER is enabled by a complex power system that allows its science instruments and communications to function continuously as it travels millions of miles from Earth. "Typically, there isn't one particular power source that can support the entire mission," says Linda Taylor, electrical engineer in Glenn Research Center s Power Systems Analysis Branch. "If you have solar arrays and you are in orbit, at some point you re going to be in eclipse." Because of this, Taylor explains, spacecraft like MESSENGER feature hybrid power systems. MESSENGER is powered by a two-panel solar array coupled with a nickel hydrogen battery. The solar arrays provide energy to the probe and charge the battery; when the spacecraft s orbit carries it behind Mercury and out of the Sun s light, the spacecraft switches to battery power to continue operations. Typically, hybrid systems with multiple power inputs and a battery acting alternately as storage and a power source require multiple converters to handle the power flow between the devices, Taylor says. (Power converters change the qualities of electrical energy, such as from alternating current to direct current, or between different levels of voltage or frequency.) This contributes to a pair of major concerns for spacecraft design. "Weight and size are big drivers for any space application," Taylor says, noting that every pound added to a space vehicle incurs significant costs. For an innovative solution to managing power flows in a lightweight, cost-effective manner, NASA turned to a private industry partner.
Simulation circuit operates under remote, automatic, or manual control to produce electrical outputs similar to pressure transducer. Specific circuit designed for simulations of Space Shuttle main engine. General circuit concept adaptable to other simulation and control systems involving several operating modes. Switches and amplifiers respond to external control signals and panel control settings to vary differential excitation of resistive bridge. Output voltage or passive terminal resistance made to equal pressure transducer in any of four operating modes.
This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.
There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.
Automatic-control system for radio-frequency (RF) induction brazing of metal tubing reduces probability of operator errors, increases safety, and ensures high-quality brazed joints. Unit combines functions of gas control and electric-power control. Minimizes unnecessary flow of argon gas into work area and prevents electrical shocks from RF terminals. Controller will not allow power to flow from RF generator to brazing head unless work has been firmly attached to head and has actuated micro-switch. Potential shock hazard eliminated. Flow of argon for purging and cooling must be turned on and adjusted before brazing power applied. Provision ensures power not applied prematurely, causing damaged work or poor-quality joints. Controller automatically turns off argon flow at conclusion of brazing so potentially suffocating gas does not accumulate in confined areas.
The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.
The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.
Method of free-space optical interconnection developed for data-processing applications like parallel optical computing, neural-network computing, and switching in optical communication networks. In method, multiple optical connections between multiple sources of light in one array and multiple photodetectors in another array made via computer-generated holograms in electrically addressed spatial light modulators (ESLMs). Offers potential advantages of massive parallelism, high space-bandwidth product, high time-bandwidth product, low power consumption, low cross talk, and low time skew. Also offers advantage of programmability with flexibility of reconfiguration, including variation of strengths of optical connections in real time.
A dual rod configuration is used to achieve 16W average power operation from a flashlamp-pumped Cr:LiSAF laser oscillator. A double-pass dual-rod amplifier configuration was used to amplify 141(mu)J pulses from a Q-switched diode-pumped LiSAF oscillator by a factor of (approximately)120. This experiment established a small signal gain of 13.4% per cm at 820 nm. Improved slope efficiency (7.4% electrical-to-light) and pulse repetition frequency (40Hz) were achieved with a single-rod oscillator using improved Cr:LiSAF material.
The Electrical Power Distribution Control Team takes on the task of determining power failures throughout the Orbiter. The Displays and Controls Team takes on the task of determining distribution, circuit breakers, and switch failures that might occur on the Orbiter or displays that stop working. This paper will identify the circuit packages I have put together for the D&C group, the redesigning of a Hybrid Driver Controller box, and the web designing the Displays and Controls website for easier access to information which can range from indicators to switches.
The applications of adaptive optics extend across multiple sectors, encompassing areas such as LiDAR, biological and chemical sensing, and free-space communications. In this study, we report on the design, fabrication, testing, and modeling of electrically reconfigurable metasurfaces using a low-loss high contrast phase change material, Ge2Sb2Se4Te integrated with an IR-transparent silicon microheater. Through this work, we introduce a reliable architecture for switching PCM-based metasurfaces within an integrated circuit configuration which is compatible with standard foundry fabrication processes. We demonstrate the capability of controlling the transmission of electromagnetic waves through the precise stimulation of PCM-based pixels, each spanning a few hundred microns, over numerous cycles. By leveraging PCM-based pixels, we unlock the potential to create metasurfaces encompassing a diverse range of functionalities such as dielectric filters, metalens, or beam steering devices, which is governed by the design of the meta-atoms. Further, we perform an in-depth investigation into the failure mechanism utilizing techniques such as Fourier transform IR spectroscopy (FTIR), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermal modeling. According to our results, due to a sharp temperature rise at the PCM/heater interface, we observe severe delamination of the PCM from the heater. More uniform PCM deposition, better adhesion at the PCM/heater interface, and a more uniform temperature distribution in the device could potentially mitigate the failure and lead to a longer life-time. By addressing these challenges, we aim to unlock the full potential of PCM-based devices and advance the field of adaptive optics.
Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.