Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “electrical switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗

Extreme fast charging of commercial Li-ion batteries via combined thermal switching and self-heating approaches

Abstract The mass adoption of electric vehicles is hindered by the inadequate extreme fast charging (XFC) performance (i.e., less than 15 min charging time to reach 80% state of charge) of commercial high-specific-energy (i.e., >200 Wh/kg) lithium-ion batteries (LIBs). Here, to enable the XFC of commercial LIBs, we propose the regulation of the battery’s self-generated heat via active thermal switching. We demonstrate that retaining the heat during XFC with the switch OFF boosts the cell’s kinetics while dissipating the heat after XFC with the switch ON reduces detrimental reactions in the battery. Without modifying cell materials or structures, the proposed XFC approach enables reliable battery operation by applying <15 min of charge and 1 h of discharge. These results are almost identical regarding operativity for the same battery type tested applying a 1 h of charge and 1 h of discharge, thus, meeting the XFC targets set by the United States Department of Energy. Finally, we also demonstrate the feasibility of integrating the XFC approach in a commercial battery thermal management system.

25 ENERGY STORAGE↗

Exploring Building Retrofit Strategies Using AutoBEM Under Future Weather Scenarios

This study evaluates the long-term effectiveness of energy conservation measures (ECMs) on building energy consumption using AutoBEM, a scalable modeling framework driven by the high-resolution Model America dataset. We simulated 18,951 buildings in Flagstaff, Arizona under four climate scenarios using Future Typical Meteorological Year (fTMY) weather files for six time periods spanning from 1980 to 2099. Six ECMs were analyzed across electricity and gas usage, including HVAC fuel-switching, insulation upgrades, and infiltration control. While some measures, such as reducing space infiltration by percentage, showed minimal or even negative impact on total energy savings at the aggregate level, they proved highly effective for specific building types. Conversely, HVAC electrification offers high gas reduction but shifts demand to electricity, highlighting critical trade-offs under different climate trajectories. Building-type-specific analysis under SSP5-RCP8.5 (2080–2099) revealed significant variation in ECM performance, underscoring the need for targeted retrofit strategies. This study demonstrates the power of combining fTMY projections with large-scale simulations to inform data-driven retrofit planning.

Chowdhury, Shovan [ORNL]↗

Nonlinear model predictive control for mode‐switching operation of reversible solid oxide cell systems

Abstract Solid oxide cells (SOCs) are a promising dual‐mode technology for the production of hydrogen through high‐temperature water electrolysis, and the generation of power through a fuel cell reaction that consumes hydrogen. Switching between these two modes as the price of electricity fluctuates requires reversible SOC operation and accurate tracking of hydrogen and power production set points. Moreover, a well‐functioning control system is important to avoid cell degradation during mode‐switching operation. In this article, we apply nonlinear model predictive control (NMPC) to an SOC module and supporting equipment and compare NMPC performance to classical proportional‐integral (PI) control strategies, while switching between the modes of hydrogen and power production. While both control methods provide similar performance across various metrics during mode switching, NMPC demonstrates a significant advantage in reducing cell thermal gradients and curvatures (mixed spatial‐temporal partial derivatives), thereby helping to mitigate long‐term degradation.

08 HYDROGEN↗

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Metal oxide-based Resistive Random-Access Memory (RRAM) exhibits multiple resistance states, arising from the activation/deactivation of a conductive filament (CF) inside a switching layer. Understanding CF formation kinetics is critical to achieving optimal functionality of RRAM. Here a phase-field model is developed, based on materials properties determined by ab initio calculations, to investigate the role of electrical bias, heat transport and defect-induced Vegard strain in the resistive switching behavior, using MO 2- x systems such as HfO 2- x as a prototypical model system. It successfully captures the CF formation and resultant bipolar resistive switching characteristics. High-throughput simulations are performed for RRAMs with different material parameters to establish a dataset, based on which a compressed-sensing machine learning is conducted to derive interpretable analytical models for device performance (current on/off ratio and switching time) metrics in terms of key material parameters (electrical and thermal conductivities, Vegard strain coefficients). These analytical models reveal that optimal performance (i.e., high current on/off ratio and low switching time) can be achieved in materials with a low Lorenz number, a fundamental material constant. This work provides a fundamental understanding to the resistive switching in RRAM and demonstrates a computational data-driven methodology of materials selection for improved RRAM performance, which can also be applied to other electro-thermo-mechanical systems.

36 MATERIALS SCIENCE↗

Design and Optimization of a Fast-Switching Electromagnetic Valve Actuator for Off-highway Vehicle Hydraulic Systems

Electrification of off-highway vehicles offers improved efficiency and reduction in greenhouse gas emissions. However, the extremely low power densities of electric machines relative to the hydraulics used in conventional off-highway vehicles makes electrification challenging. Although the recently proposed Hybrid Hydraulic Electric Architecture (HHEA) can overcome this limitation, it requires frequent switching between the pressure rails using switching valves resulting in losses. Fast switching minimizes the switching losses in these valves, which otherwise significantly reduce the overall efficiency of the system. The primary contribution of this paper is the design and optimization of a linear electromagnetic actuator for a fast-switching valve. This paper identifies the actuator requirements to enable fast switching and presents a design and optimization technique to realize actuators that meet the design objectives. In addition, a multi-physics approach is proposed to model the performance of the complete switching valve by considering the electromagnetic, fluidic, and mechanical physics. An optimal actuator design is obtained using the developed optimization framework, and the multi-physics model demonstrates that the selected design achieves a 30% reduction in throttling-related switching losses by switching 70 % faster than comparable commercial valve designs.

Linear actuators, off-highway vehicle electrificat↗

Moiré-driven topological electronic crystals in twisted graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. As a result, the quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

Electronic properties and materials↗

Real-time power management technique for microgrid with flexible boundaries

In order to diminish the impacts brought by high penetration of renewable energy on the reliability of distribution systems, some distribution networks (e.g. Chattanooga electric power board system) have deployed smart switches (SSs) to island some areas to mitigate outage losses. However, due to intermittency and sharply changing rate of renewable energy, it is likely to experience insufficient or excessive power for islanded areas. Therefore, a microgrid controller featured with flexible boundaries is proposed. With proposed microgrid controller, the microgrid can not only shrink or expand its boundaries according to current renewable energy supply, but also disconnect/connect to the main grid with a designated SS. Furthermore, to ensure the microgrid controller could obtain suitable boundaries on the time scale of seconds, a real-time power management technique with alternative generating algorithm is designed to generate all possible alternative boundaries and choose the optimal one, which is scalable to any topology. In addition, in order to maintain state of charge of batteries within a desirable range, anti-overcharge/discharge strategies are designed. Four comprehensive experiments verify that the implementation of the microgrid controllers can realise flexible boundaries and deal with sharply changing rate of renewable generation or load on the time scale of seconds.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗

Ferroelectricity of wurtzite Al 1−x Hf x N heterovalent alloys

Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d 33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

36 MATERIALS SCIENCE↗

A 3D-printed molecular ferroelectric metamaterial

Significance Molecular ferroelectrics, which show the ability to switch the electromechanical activity by an external electric field, establish the basis for mechanical metamaterial technologies. Despite their theoretical promise, such mechanical metamaterials remain hindered by the lack of adaptive stimuli-responsive materials which can be effectively tuned “on demand” across time and length scales. Here, we unravel a printable mechanical metamaterial of imidazolium perchlorate with superior electromechanical coupling and reprogrammable stiffness. We propose a continuous rapid three-dimensional (3D) printing technique which can reduce the manufacturing time of ferroelectrics from hours down to minutes. The printed molecular ferroelectric metamaterial structure is then shown to enable a tunable-frequency vibration-isolating architecture. This study paves the way for rationally designed 3D-printable molecular ferroelectric metamaterials.

36 MATERIALS SCIENCE↗

Machine Learning-Assisted Distribution System Network Reconfiguration Problem

High penetration from volatile renewable energy resources in the grid and the varying nature of loads raise the need for frequent line switching to ensure the efficient operation of electrical distribution networks. Operators must ensure maximum load delivery, reduced losses, and the operation between voltage limits. However, computations to decide the optimal feeder configuration are often computationally expensive and intractable, making it unfavorable for real-time operations. This is mainly due to the existence of binary variables in the network reconfiguration optimization problem. To tackle this issue, we have devised an approach that leverages machine learning techniques to reshape distribution networks featuring multiple substations. This involves predicting the substation responsible for serving each part of the network. Hence, it leaves simple and more tractable Optimal Power Flow problems to be solved. This method can produce accurate results in a significantly faster time, as demonstrated using the IEEE 37-bus distribution feeder. Compared to the traditional optimization-based approaches, a feasible solution is achieved approximately ten times faster for all the tested scenarios.

deep neural networks↗

Multiple Integrated In-Line Diode Lasers

Proposed integrated in-line array of semiconductor lasers intended to provide high reliability and/or long operating lifetime. Multiple integrated collinear semiconductor lasers share common optical waveguide but individually electrically excited. When one device fails, another switched on. Important advantage in systems in which both reliability of diode lasers and alignment of those lasers with other optical components critical.

Connolly, John C.↗

Apparatus for detecting at least one predetermined condition and providing an informational signal in response thereto in a medication infusion system

A medication infusion system provides redundant safety and includes condition detecting and informational alarm signal generating apparatus for indicating if (1) a fluid leak occurs in different portions of the system; (2) a programmable input from a patient or physician would result in exceeding a safe dosage limit; (3) the reservoir containing medication has been filled; (4) the intended medication pumping does not correlate with the pumping actually effected; (5) battery voltage is low; (6) the medication reserve is low; and (7) the system has been switched off. The apparatus may provide subcutaneous electrical, thermal, or audible stimulation to the patient and also provides a signal which a physician may monitor. The stimulation may be coded to separately identify each above-listed deviation in nominal system performance. In addition, the number of medication requests are correlated with actual medication dispensing to assure proper operation. An identification scheme is provided which matches the patient with his or her corresponding medication.

Fischell, Robert E.↗

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Gate Rupture (SEGR)↗

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗

Electrically tunable nonlinear light generation in plasmonic tunnel junctions

Active and efficient control of nonlinear optical processes is essential for integrated photonics, with applications in signal processing, ultrafast switching, and quantum light manipulation. While nanophotonic structures are powerful for enhancing nonlinearities, achieving wide-range electrical tunability has remained a challenge. Plasmonic tunnel junctions offer a unique path to bridge this gap because they combine extreme optical field confinement with direct electrical control in a single nanoscale device. Here, we report the first, to our knowledge, demonstration of electrically tunable second-harmonic generation (SHG) in plasmonic tunnel junctions. Using ultra-stable epitaxial heterostructures, we achieve reproducible modulation of SHG with depths up to ∼500% and magnitudes above 1.3V −1 . We identify two mechanisms, electric-field-induced SHG (EFISH) and ion migration, that can either compete or cooperate depending on junction thickness and bias, enabling both broad tunability and ferroelectric-like hysteretic switching. These findings establish plasmonic tunnel junctions as a platform for electrically controlled nonlinear optics, with potential for nanoscale light sources, reconfigurable modulators, and neuromorphic photonic devices..

42 ENGINEERING↗