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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Modelling and design of high performance indium phosphide solar cells

A first principles pn junction device model has predicted new designs for high voltage, high efficiency InP solar cells. Measured InP material properties were applied and device parameters (thicknesses and doping) were adjusted to obtain optimal performance designs. Results indicate that p/n InP designs will provide higher voltages and higher energy conversion efficiencies than n/p structures. Improvements to n/p structures for increased efficiency are predicted. These new designs exploit the high absorption capabilities, relatively long diffusion lengths, and modest surface recombination velocities characteristic of InP. Predictions of performance indicate achievable open-circuit voltage values as high as 943 mV for InP and a practical maximum AM0 efficiency of 22.5 percent at 1 sun and 27 C. The details of the model, the optimal InP structure and the effect of individual parameter variations on device performance are presented.

Rhoads, Sandra L.↗
NASA NTRS1989

Plasma conductivity for Comet Halley ionosphere

Observational as well as semitheoretical magnetic field profiles have been used to derive self-consistently the plasma conductivity profiles for the ionosphere of Comet Halley. The characteristic diffusion length for the field, according to the present model, is about 28 km; this is in very good agreement with the Giotto spacecraft observations. It is shown that ideal MHD as well as constant conductivity models are not appropriate for the study of dynamical structure of the Halley's ionosphere.

Buti, B.↗
NASA NTRS1989

Alternating gradient photodetector

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Overhauser, Albert W.↗
NASA NTRS1988

Modeling and simulation of InP homojunction solar cells

Modeling and simulation of single-crystal InP homojunction solar cells has been performed using the PC-1D code. Cell design and performance have been optimized using the best available estimates of the various materials parameters. A comparison has been made of the predictions of the PC-1D model to those of other models. The optimum performance is predicted to give an efficiency approaching 21 percent at AM0. It is shown that in order to describe the performance of actual cells it is necessary to use larger values of the intrinsic carrier concentration and the surface recombination velocity (SRV) than have been reported in the literature. However, even with a near-maximum value of SRV (e.g., 10 to the 7th cm/s) it is necessary to reduce the minority carrier diffusion length in the emitter to only 0.01 micron in order to account for the relatively low quantum efficiency in the blue part of the spectrum. This indicates that improvement in the emitter bulk properties could be much more important than the SRV. Other loss mechanisms are also discussed; in particular, it is shown that recombination in the base, for good quality material, is relatively insignificant.

Yahia, A. H.↗
NASA NTRS1990

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Landis, Geoffrey A.↗
NASA NTRS1989

Mathematical optimization of photovoltaic converters for diode lasers

The mathematical optimization of vertical-junction photovoltaic converters for use with diode laser arrays supplying powers up to 1 MW is discussed. Photovoltaic parameters were optimized using a mathematical model. The optimized converters have 500 single junctions connected in series. The efficiency varies from 41 percent for a 0.73-micron diode laser to 46 percent for a 0.83-micron diode laser. The optimum width of the single-junction converter is small, 3.0 microns, in order for the p-n junction to be within a diffusion length of the light-generated carriers. Another critical parameter is the series resistance; the optimum value of 0.001 ohms should be achievable. Another critical parameter is the donor carrier concentration, for which an optimum value of 5 x 10 to the 15th carriers/cu cm has been chosen.

Walker, Gilbert H.↗
NASA NTRS1990

Stability of dendritic arrays

An approximate method for studying steady-state properties and linear stability of the dendritic arrays that are formed in directional solidification of alloys is proposed. This analysis is valid at high growth rates where the primary spacing between dendrites is larger than the velocity-dependent solutal diffusion length. A neutral stability boundary is computed and it is found that, in the situations where the results should be valid, the experimental data of Somboonsuk, et al. (1984) lie in the stable region, well away from the boundary.

Warren, James A.↗
NASA NTRS1990

Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

Jain, Raj K.↗
NASA NTRS1991

GaP betavoltaic cells as a power source

Maximum power output for the GaP cells of this study was found to be on the order of 1 microW. This resulted from exposure to 200 and 40 KeV electrons at a flux of 2 x 10(exp 9) electrons/sq cm/s, equivalent to a 54 mCurie source. The efficiencies of the cells ranged from 5 to 9 percent for 200 and 40 KeV electrons respectively. The lower efficiency at higher energy is due to a substantial fraction of energy deposition in the substrate, further than a diffusion length from the depletion region of the cell. Radiation damage was clearly observed in GaP after exposure to 200 KeV electrons at a fluence of 2 x 10(exp 12) electrons/sq cm. No discernable damage was observed after exposure to 40 KeV electrons at the same fluence. Analysis indicates that a GaP betavoltaic system would not be practical if limited to low energy beta sources. The power available would be too low even in the ideal case. By utilizing high activity beta sources, such as Sr-90/Y-90, it may be possible to achieve performance that could be suitable for some space power applications. However, to utilize such a source the problem of radiation damage in the beta cell material must be overcome.

Pool, F. S.↗
NASA NTRS1991

The effects of electron and proton radiation on GaSb infrared solar cells

Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).

Gruenbaum, P. E.↗
NASA NTRS1990

Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greaater than 16 percent AM0) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AM0 efficiency at 25 C.

Jain, R. K.↗
NASA NTRS1994

Calculation of near optimum design of InP/In(0.53)Ga(0.47)As monolithic tandem solar cells

An analysis of InP/GaAs tandem solar cell structure has been undertaken to allow for maximum AMO conversion efficiencies (space applications) while still taking into account both the theoretical and technological limitations. The dependence of intrinsic and extrinsic parameters such as diffusion lengths and generation-recombination (GR) lifetimes on N/P and P/N devices performances are clearly demonstrated. We also report for the first time the improvement attainable through the use of a new patterned tunnel junction as the inter cell ohmic interconnect. Such a design minimizes the light absorption in the interconnect region and leads to a noticeable increase in the cell efficiency. Our computations predict 27 percent AMO efficiency for N/P tandems with ideality factor gamma = 2 (GR lifetimes approximately equal 1 micron), and 36 percent for gamma = 1 (GR lifetimes approximately equals 100 microns). The method of optimization and the values of the physical and optical parameters are discussed.

Renaud, P.↗
NASA NTRS1995

Performance of Ga(0.47)In(0.53)As cells over a range of proton energies

Ga(0.47)In(0.53)As solar cells were processed by OMVPE and their characteristics determined at proton energies of 0.2, 0.5, and 3 MeV. Emphasis was on characteristics applicable to use of this cell as the low bandgap member of a monolithic, two terminal high efficiency InP/GaInAs cell. It was found that the radiation induced degradation in efficiency, I(sub SC), V(sub OC) and diffusion length increased with decreasing proton energy. When efficiency degradations were compared with InP it was observed that the present cells showed considerably more degradation over the entire energy range. Similar to InP, R(sub C), the carrier removal rate, decreased with increasing proton energy. However, numerical values for R(sub C) differed from those observed with InP. The difference is attributed to differing defect behavior between the two cell types. It was concluded that particular attention should be paid to the effects of low energy protons especially when the particle's track ends in one cell of the multibandgap device.

Weinberg, I.↗
NASA NTRS1994

Model images of radio halos around supernova remnants

I present model calculations of profiles and two-dimensional images of the radio synchrotron emission of young supernova remnants, concentrating on observable effects of relativistic eletrons diffusing upstream of the shock wave. If the preshock electron scattering mean free path is sufficiently long, observable synchrotron halos outside the bulk of the radio emission can potentially result; their absence can constrain the mean free path from above. If scattering is primarily due, as expected, to Alfven waves with amplitude detla(B), the halo is expected to extend a distance of order r(sub g)c(delta(B)/B)(exp 2)/v(sub s) beyond the shock, where r(sub g) is the gyroradius of the electrons emitting at the observed frequency, B is the upstream magnetic field strength, v(sub s) is the shock velocity, and the amplitude delta(B) refers to wave with wavelength comparable to r(sub g), of order 10(exp 13) cm for typical supernova-remnant parameters. However, the detailed geometry of the halo varies with the assumptions about particle acceleration in the shock wave. I present an atlas of model profiles and images as a function of preshock diffusion length, of aspect angle between the magnetic field and the line of sight, and of other relevant parameters.

Reynolds, Stephen P.↗
NASA NTRS1999

Non-Equilibrium Superconductivity and Magnetic Pair Breaking in Perovskite Half-Metallic Ferromagnet-Insulator-Superconductor (F-I-S) Heterostructures

The effect of spin-polarized quasiparticle currents on the critical current density (J-c) of cuprate superconductors is studied in perovskite F-I-S heterostructures as a function of insulator thickness and of underlying magnetic materials. A pulsed current technique is employed to minimize extraneous Joule heating on the superconductor. At temperatures near T-c, F-I-S samples with insulator thicknesses\1e2nm show precipitous decrease in J_c as current injection (I_m) is increased. In contrast, J_c in a controlled sample with a substituted non-magnetic material (N-I-S) exhibit no dependence on I_m. Similarly, a F-I-S sample with a 10 mn insulating barrier also show little J_c effect versus I_m. At low temperatures with I_m = 0, significant suppression of J-c is observed only in the thin barrier F-I-S samples, although T_c and the normal-state resistivity of all samples are comparable. These phenomena can be attributed to the Cooper pair breaking induced by externally-injected and internally-reflected spin-polarized quasiparticle currents. We estimate an order of magnitude range for the spin diffusion length of 100 nm to 100\ mum.

Fu, C.-C.↗
NASA NTRS2002

Design of a Plasma Injector for a Pulsed Plasma Accelerator

In recent years, a pulsed plasma accelerator has been proposed as a candidate stand-off driver for the formation of an imploding liner in magnetized target fusion. For a near-term physics exploratory experiment to study the feasibility of this standoff approach, a plasma accelerator has been proposed that requires the controlled introduction and preparation of the initial plasma for acceleration. This includes uniform injection of the propellant downstream of the breech with a high degree of ionization. The design of a plasma feed is presented, which injects a high conductivity, highly collisional propellant transverse to the conductor. The plasma injector is designed to establish an initial plasma with a moderate Hall parameter at the trailing edge of the plasma slug, high Hall parameter behind the slug for magnetic insulation, and a short diffusion length in comparison with characteristic dimensions of the plasma slug to avoid propellant loss at the trailing edge.

Cassibry, J. T.↗
NASA NTRS2004

Particles Growing in Solutions: Depletion Forces and Instability of Homogeneous Particle Distribution

Crystallites, droplets and amorphous precipitates growing from supersaturated solution are surrounded by zones, which are depleted with respect to the molecules they are built of. If two such particles of colloidal size are separated by a distance comparable to their diameters, then the depletion within the gap between particles is deeper than that at the outer portion of the particles. This will cause depletion attraction between the particles should appear. It may cause particle coagulation and decay of the originally homogeneous particle distribution into a system of clouds within which the particle number density is higher, separated by the region of the lower number density. Stability criterion, Q = 4 pi R(exp 3)c/3 >> 1, was analytically found along with typical particle density distribution wavevector q = (Q/I)(exp 1/2)(a/R)(exp 1/4). Here, R and a are the particle and molecular radii, respectively, c is the average molecular number density in solution and I is the squared diffusion length covered by a molecule during a typical time characterizing decay of molecular concentration in solution due to consumption of the molecules by the growing particles.

Chernov, A. A.↗