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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Evaluation of Silicon-on-Insulator HTOP-01 Operational Amplifier for Wide Temperature Operation

Electronics capable of operation under extreme temperatures are required in many of NASA space exploration missions. Aerospace and military applications, as well as some terrestrial industries constitute environments where electronic systems are anticipated to be exposed to extreme temperatures and wide-range thermal swings. Electronics that are able to withstand and operate efficiently in such harsh environments would simplify, if not eliminate, traditional thermal control elements and their associated structures for proper ambient operation. As a result, overall system mass would be reduced, design would be simplified, and reliability would be improved. Electronic parts that are built utilizing silicon-on-insulator (SOI) technology are known to offer better radiation-tolerance compared to their conventional silicon counterparts, provide faster switching, and consume less power. They also exhibit reduced leakage current and, thus, they are often tailored for high temperature operation. These attributes make SOI-based devices suitable for use in harsh environments where extreme temperatures and wide thermal swings are anticipated. A new operational amplifier, based on silicon-on-insulator technology and geared for high temperature well-logging applications, was recently introduced by Honeywell Corporation. This HTOP-01 dual precision operational amplifier is a low power device, operates on a single supply, and has an internal oscillator and an external clocking option [1]. It is rated for operation from -55 C to +225 C with a maximum output current capability of 50 mA. The amplifier chip is designed as a 14-pin, hermetically-sealed device in a ceramic package. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗
NASA NTRS1972

Squib-operated disconnect

Disconnect device is described, which consists of stud with enlarged end held in collet locked by pins, which are held in place by piston. When squib is fired, trapped combustion products force piston to release pins.

Alexander, P., Jr.↗
NASA NTRS1973

Apollo 17 mission. Lunar roving vehicle/traverse gravimeter experiment motion sensitivity

The results of the lunar roving vehicle/traverse gravimeter experiment motion sensitivity test shows that the gravity measurements in both the normal and bypass modes should not be adversely affected by motion induced in the lunar roving vehicle by operation of the television camera position drive device or the operation of the surface electrical properties receiver/recorder. Motion of the traverse gravimeter experiment occurred when a 1.4-hertz resonant mode in pitch of the pallet was excited. Both of these modes were excited by camera elevation changes with the camera axis positioned fore and aft.

Source record↗
NASA NTRS1973

Wide temperature range electronic device with lead attachment

A electronic device including lead attachment structure which permits operation of the devices over a wide temperature range is reported. The device comprises a core conductor having a thin coating of metal thereon whereby only a limited amount of coating material is available to form an alloy which bonds the core conductor to the device electrode, the electrode composition thus being affected only in the region adjacent to the lead.

Farrell, R.↗
NASA NTRS1988

Diode laser-pumped solid-state lasers

Recently, interest in diode laser-pumped solid-state lasers has increased due to their advantages over flashlamp-pumped solid-state lasers. A historical overview is presented of semiconductor diode-pumped solid-state lasers beginning with work in the early 1960s and continuing through recent work on wavelength extension of these devices by laser operation on new transitions. Modeling of these devices by rate equations to obtain expressions for threshold, slope efficiency, and figures of merit is also given.

Fan, Tso Yee↗
NASA NTRS1991

Representing functions/procedures and processes/structures for analysis of effects of failures on functions and operations

Current qualitative device and process models represent only the structure and behavior of physical systems. However, systems in the real world include goal-oriented activities that generally cannot be easily represented using current modeling techniques. An extension of a qualitative modeling system, known as functional modeling, which captures goal-oriented activities explicitly is proposed and how they may be used to support intelligent automation and fault management is shown.

Malin, Jane T.↗
NASA NTRS1993

Testing of ROMPS robot mechanical interfaces and compliant device

The Robot Operated Materials Processing System (ROMPS) has been developed at Goddard Space Flight Center (GSFC) under a flight project to investigate commercially promising in-space material processes and to design reflyable robot automated systems to be used in the above processes for low-cost operations. The ROMPS is currently scheduled for flight in 1994 as a Hitchhiker payload in a Get Away Special (GAS) can. An important component of the ROMPS is a three degree-of-freedom (DOF) robot which will be responsible for carrying out the required tasks of in-space processing of selected materials. This report deals with testing of the mating capability of the ROMPS robot fingers with its various mechanical interfaces. In particular, the test plan will focus on studying the capability of a compliance mechanism mounted on the robot fingers in accommodating misalignments between the robot fingers and the interfaces during the mating. The report is organized as follows: Section 2 represents the main components of the ROMPS robot and briefly describes its operations. Section 3 presents the objectives of the test and outlines the test plan. The testbed comprising a Steward Platform-based high precision manipulator and associated data acquisition and control systems is described in Section 4. Section 5 presents results of numerous experiments conducted to study the mating capability of the robot fingers with its various interfaces under misalignments. The report is concluded with observations and recommendations based on the test results.

Nguyen, Charles C.↗
NASA NTRS2000

Infrared Emission Spectroscopy as a Reliability Tool

In this paper we report on a technique based on infrared emission spectroscopy which has been found to be useful for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). The technique was demonstrated on a powered and un-powered GaAs MESFET attaining a spatial resolution of 0.5 microns. A non-destructive submicron-size spot laser beam provided by an HeNe laser excites an extremely small local area of the gate channel of a GaAs MESFET under various operating conditions. Given the state of the experimental test system, we estimate a spatial resolution of about 0.1 microns and a spectral resolution of about 0. I Angstroms. This provides 15 - 100 times finer spatial resolution than can be obtained using the best passive IR systems available. The temperature resolution (less than 0.02 K/micron) of this technique is depend upon the spectrometer used, and that it can be improved further. The information obtained from this technique can be used to estimate device lifetimes for critical applications and for measurement of channel temperature of devices under actual operating conditions. Another potential use of the novel technique can be as a cost-effective prescreening tool for determining the "hot spot" channel temperature of devices under normal operating conditions which can further improve device design, yield enhancement, and reliable operation

Kim, Q.↗
NASA NTRS1972

Lunar rock splitter/can sealer

A manually powered and operated force generating device fractures lunar material as received from the moon and seals cans containing lunar samples. The rock splitting and can sealing operations are carried out in a vacuum environment. Can sealing is a cold welding process that requires a pressure of 125,000 psi (generating 32,000 lb for the largest can used). The design and modification of the device and the operating experience are described.

Johnson, K. G.↗
NASA NTRS1996

Materials For Improved Josephson-Junction Devices

Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.

Vasquez, Richard P.↗
NASA NTRS2010

Evaluation of a High Temperature SOI Half-Bridge MOSFET Driver, Type CHT-HYPERION

Silicon-On-Insulator (SOI) technology utilizes the addition of an insulation layer in its structure to reduce leakage currents and to minimize parasitic junctions. As a result, SOIbased devices exhibit reduced internal heating as compared to the conventional silicon devices, consume less power, and can withstand higher operating temperatures. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a commercial-off-the-shelf (COTS) SOI half-bridge driver integrated circuit was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Patterson, Richard↗
NASA NTRS1986

Overcash, D. R.

The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.

Source record↗
NASA NTRS1986

A dual plate thermoplastic recording device for holographic interferometry

The development of a dual plate holographic interferometer using thermoplastic recording devices is described. The operational characteristics of the thermoplastic devices are investigated and optimized for fringe contrast and signal-to-noise ratio. The dual plate device was demonstrated in a transonic wind tunnel at NASA Ames Research Center. The interferograms derived from the thermoplastic device are compared with those derived from conventional photographic emulsions. The fringe contrast achieved with the optimized thermoplastic device is equivalent to the contrast achieved with conventional techniques.

Umstatter, Holly L.↗
NASA NTRS1992

Control system and method for prosthetic devices

A control system and method for prosthetic devices is provided. The control system comprises a transducer for receiving movement from a body part for generating a sensing signal associated with that movement. The sensing signal is processed by a linearizer for linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part. The linearized sensing signal is normalized to be a function of the entire range of body part movement from the no-shrug position of the movable body part through the full-shrug position of the movable body part. The normalized signal is divided into a plurality of discrete command signals. The discrete command signals are used by typical converter devices which are in operational association with the prosthetic device. The converter device uses the discrete command signals for driving the movable portions of the prosthetic device and its sub-prosthesis. The method for controlling a prosthetic device associated with the present invention comprises the steps of receiving the movement from the body part, generating a sensing signal in association with the movement of the body part, linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part, normalizing the linear signal to be a function of the entire range of the body part movement, dividing the normalized signal into a plurality of discrete command signals, and implementing the plurality of discrete command signals for driving the respective movable prosthesis device and its sub-prosthesis.

Bozeman, Richard J., Jr.↗
NASA NTRS1995

Control method for prosthetic devices

A control system and method for prosthetic devices is provided. The control system comprises a transducer for receiving movement from a body part for generating a sensing signal associated with that movement. The sensing signal is processed by a linearizer for linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part. The linearized sensing signal is normalized to be a function of the entire range of body part movement from the no-shrug position of the moveable body part. The normalized signal is divided into a plurality of discrete command signals. The discrete command signals are used by typical converter devices which are in operational association with the prosthetic device. The converter device uses the discrete command signals for driving the moveable portions of the prosthetic device and its sub-prosthesis. The method for controlling a prosthetic device associated with the present invention comprises the steps of receiving the movement from the body part, generating a sensing signal in association with the movement of the body part, linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part, normalizing the linear signal to be a function of the entire range of the body part movement, dividing the normalized signal into a plurality of discrete command signals, and implementing the plurality of discrete command signals for driving the respective moveable prosthesis device and its sub-prosthesis.

Bozeman, Richard J., Jr.↗
NASA NTRS1996

Control System for Prosthetic Devices

A control system and method for prosthetic devices is provided. The control system comprises a transducer for receiving movement from a body part for generating a sensing signal associated with that of movement. The sensing signal is processed by a linearizer for linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part. The linearized sensing signal is normalized to be a function of the entire range of body part movement from the no-shrug position of the moveable body part through the full-shrg position of the moveable body part. The normalized signal is divided into a plurality of discrete command signals. The discrete command signals are used by typical converter devices which are in operational association with the prosthetic device. The converter device uses the discrete command signals for driving the moveable portions of the prosthetic device and its sub-prosthesis. The method for controlling a prosthetic device associated with the present invention comprises the steps of receiving the movement from the body part, generating a sensing signal in association with the movement of the body part, linearizing the sensing signal to be a linear function of the magnitude of the distance moved by the body part, normalizing the linear signal to be a function of the entire range of the body part movement, dividing the normalized signal into a plurality of discrete command signals, and implementing the plurality of discrete command signals for driving the respective moveable prosthesis device and its sub-prosthesis.

Bozeman, Richard J.↗
NASA NTRS2007

Determining Desirable Cursor Control Device Characteristics for NASA Exploration Missions

A test battery was developed for cursor control device evaluation: four tasks were taken from ISO 9241-9, and three from previous studies conducted at NASA. The tasks focused on basic movements such as pointing, clicking, and dragging. Four cursor control devices were evaluated with and without Extravehicular Activity (EVA) gloves to identify desirable cursor control device characteristics for NASA missions: 1) the Kensington Expert Mouse, 2) the Hulapoint mouse, 3) the Logitech Marble Mouse, and 4) the Honeywell trackball. Results showed that: 1) the test battery is an efficient tool for differentiating among input devices, 2) gloved operations were about 1 second slower and had at least 15% more errors; 3) devices used with gloves have to be larger, and should allow good hand positioning to counteract the lack of tactile feedback, 4) none of the devices, as designed, were ideal for operation with EVA gloves.

Sandor, Aniko↗
NASA NTRS1984

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Lieneweg, U.↗