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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Void coalescence and ductile failure in IN718 investigated via high-energy synchrotron X-ray tomography and diffraction

Ductile failure through the growth and coalescence of voids is of particular relevance for many engineering materials. Yet, the lack of experimental measurements of the mechanical state of the material at an appropriate length scale has limited further understanding of the regime of ductile failure. In this study, local grain-scale experimental measurements are used to determine their relevance for describing and predicting ductile failure. Additive manufactured materials, due to the presence of inherent porosity, as well as the ability to tailor internal porosity, provides a promising avenue to study ductile failure. Selective laser melting is used to manufacture a specially designed specimen with two large, internal voids, in addition to the natural porosity, which is characteristic to the production process. The initial porosity and its evolution upon tensile loading are characterized via micro tomography. Several locations of void coalescence are captured in the sample, revealing activity of multiple modes of failure. Finite element simulations, with a simplified J2 plasticity model, instantiated with the initial void structure, is deployed, in which geometric localizations of stress concentration corresponded with experimentally observed sites of coalescence but was inadequate in capturing the appropriate failure mechanism. Furthermore, from the experimental results of the far-field high-energy diffraction microscopy, the heterogeneous micromechanical state is identified and tracked around voids due to the local grain interactions. These experiments determine narrow bands of low stress triaxiality, at the onset of failure, which highlight the path of coalescence through intervoid shearing. Diffraction spot spreading analysis aided characterization of intragranular plasticity and strain heterogeneity, which can be coupled with high triaxiality to form the conditions inducive for coalescence through intervoid necking. In this study, the experimentally determined grain-scale description of the micromechanical state provides a physical basis that can accurately capture both the sites and the mechanism of void coalescence at the onset of ductile failure.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Electron-Spin Filters Based on the Rashba Effect

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Ting, David Z.-Y.↗
DOE OSTI2025

Automated workflow for non-empirical Wannier-localized optimal tuning of range-separated hybrid functionals

Here, we introduce an automated workflow for generating non-empirical Wannier-localized optimally-tuned screened range-separated hybrid (WOT-SRSH) functionals. WOT-SRSH functionals have been shown to yield highly accurate fundamental band gaps, band structures, and optical spectra for bulk and 2D semiconductors and insulators. Our workflow automatically and efficiently determines the WOT-SRSH functional parameters for a given crystal structure and composition, approximately enforcing the correct screened long-range Coulomb interaction and an ionization potential ansatz. In contrast to previous manual tuning approaches, our tuning procedure relies on a new search algorithm that only requires a few hybrid functional calculations with minimal user input. We demonstrate our workflow on 23 previously studied semiconductors and insulators, reporting the same high level of accuracy. By automating the tuning process and improving its computational efficiency, the approach outlined here enables applications of the WOT-SRSH functional to compute spectroscopic and optoelectronic properties for a wide range of materials.

Gant, Stephen E. [University of California, Berkel↗
DOE OSTI2023

Compositionally Complex Alloys: Some Insights from Photoemission Spectroscopy

Photoemission spectroscopy (PES) is an underrepresented part of current and past studies of compositionally complex alloys (CCA) such as high-entropy alloys (HEA) and their derivatives. PES studies are very important for understanding the electronic structure of materials, and are therefore essential in some cases for a correct description of the intrinsic properties of CCAs. Here, we present several examples showing the importance of PES. First, we show how the difference between the split-band structure and the common-band structure of the valence band (VB), observed by PES, can explain a range of properties of CCAs and alloys in general. A simple description of the band crossing in CCAs composed from the early and late transition metals showing a split band is discussed. We also demonstrate how a high-accuracy PES study can determine the variation in the density of states at the Fermi level as a function of Cu content in Ti-Zr-Nb-Ni-Cu metallic glasses. Finally, the first results of an attempt to single out the contributions of particular constituents in Cantor-type alloys to their VBs are presented. The basic principles of PES, the techniques employed in studies presented, and some issues associated with PES measurements are also described.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

VTXO: the Virtual Telescope for X-ray Observations

The Virtual Telescope for X-ray Observations (VTXO) will use lightweight Phase Frensel Lenses (PFLs) in a virtual X-ray telescope with 1 km focal length and with nearly 50 milli-arcsecond angular resolution. Laboratory characterization of PFLs have demonstrated near diffraction-limited angular resolution in the X-ray band, but they require long focal lengths to achieve this quality of imaging. VTXO is formed by using precision formation flying of two SmallSats: a smaller, 6U OpticsSat that houses the PFLs and navigation beacons while a larger, ESPA-class DetectorSat contains an X-ray camera, a charged-particle radiation monitor, a precision star tracker, and the propulsion for the formation flying. The baseline flight dynamics uses a highly-elliptical supersynchronous geostationary transfer orbit to allow the inertial formation to form and hold around the 90,000 km apogee for 10 hours of the 32.5-hour orbit with nearly a year mission lifetime. The guidance, navigation, and control (GN&C) for the formation flying uses standard CubeSat avionics packages, a precision star tracker, imaging beacons on the Optics Sat, and a radio ranging system that also serves as an inter-satellite communication link. VTXO’s fine angular resolution enables measuring the environments nearly an order of magnitude closer to the central engines of bright compact X-ray sources compared to the current state of the art. This X-ray imaging capability allows for the study of the effects of dust scattering nearer to the central objects such as Cyg X-3 and GX 5-1, for the search for jet structure nearer to the compact object in X-ray novae such as Cyg X-1and GRS 1915+105, and for the search for structure in the termination shock of in the Crab pulsar wind nebula. The In this paper, the VTXO science performance, SmallSat and instrument designs,and mission description is be described. The VTXO development was supported as one of the selected 2018 NASA Astrophysics SmallSat Study (AS3) missions.

John Krizmanic↗
NASA NTRS1999

Capella: Structure and Abundances

This grant covers the analysis of ASCA spectra of the cool star binary system Capella. This project has also required the analysis of simultaneous EUVE data. The ASCA spectrum of Capella could not be fit with standard models; by imposing models based on strong lines observed with EUVE, a problem wavelength region was identified. Correcting the problem required calculations of atomic collision strengths of higher principal quantum number than had ever been calculated, resulting in a paper in process by Liedahl and Brickhouse. With these new models applied to the ASCA spectrum, better fits were obtained. While solar abundance ratios are generally consistent with the ASCA data, the ratio of Ne/Fe is three to four times lower than solar photospheric values. Whether there is a general First Ionization Potential (FIP) effect or a specific neon anomaly cannot be determined from these data. Detailed discussion has been provided to NASA in the most recent annual report (1997). Two poster presentations have been made regarding modeling requirements. A substantial paper is in the final revision form, following review by six co-authors. The results of this work have wide implications, since the newly calculated emission lines almost certainly contribute to other problems in fitting not only other stellar spectra, but also composite supernova remnants, galaxies, and cooling flow clusters of galaxies. Furthermore, Liedahl and Brickhouse have identified other species for which lines of a similar nature (high principal quantum number) will contribute significant flux. For moderate resolution X-ray spectra, lines left out of the models in relatively isolated bands, will be attributed to continuum flux by spectral fitting engines, causing errors in line-to-continuum ratios. Thus addressing the general theoretical problem is of crucial importance.

Brickhouse, Nancy S.↗
NASA NTRS2009

ATK Launch Vehicle (ALV-X1) Liftoff Acoustic Environments: Prediction vs. Measurement

The ATK Launch Vehicle (ALV-X1) provided an opportunity to measure liftoff acoustic noise data. NASA Marshall Space Flight Center (MSFC) engineers were interested in the ALV-X1 launch because the First Stage motor and launch pad conditions, including a relativity short deflector ducting, provide a potential analogue to future Ares I launches. This paper presents the measured liftoff acoustics on the vehicle and tower. Those measured results are compared to predictions based upon the method described in NASA SP-8072 "Acoustic Loads Generated by the Propulsion System" and the Vehicle Acoustic Environment Prediction Program (VAEPP) which was developed by MSFC acoustics engineers. One-third octave band sound pressure levels will be presented. This data is useful for the ALV-X1 in validating the pre-launch environments and loads predictions. Additionally, the ALV-X1 liftoff data can be scaled to define liftoff environments for the NASA Constellation program Ares vehicles. Vehicle liftoff noise is caused by the supersonic jet flow interaction with surrounding atmosphere or more simply, jet noise. As the vehicle's First Stage motor is ignited, an acoustic noise field is generated by the exhaust. This noise field persists due to the supersonic jet noise and reflections from the launch pad and tower, then changes as the vehicle begins to liftoff from the launch pad. Depending on launch pad and adjacent tower configurations, the liftoff noise is generally very high near the nozzle exit and decreases rapidly away from the nozzle. The liftoff acoustic time range of interest is typically 0 to 20 seconds after ignition. The exhaust plume thermo-fluid mechanics generates sound at approx.10 Hz to 20 kHz. Liftoff acoustic noise is usually the most severe dynamic environment for a launch vehicle or payload in the mid to high frequency range (approx.50 to 2000 Hz). This noise environment can induce high-level vibrations along the external surfaces of the vehicle and surrounding launch facility structures. The acoustic pressure fluctuations will induce severe vibrations in relatively large lightweight structures. Consequently, there is the potential for failure of the structure or attached electrical components. Due to these potential failures, the liftoff acoustic noise is one of the noise source inputs used to determine the vibro-acoustic qualification environment for a launch vehicle and its components.

Houston, Janice↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
DOE OSTI2022

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al 0.85 Ga 0.15 N heterostructures on single-crystal AlN substrates

The polarization difference and band offset between Al(Ga)N and GaN induce two-dimensional (2D) free carriers in Al(Ga)N/GaN heterojunctions without any chemical doping. A high-density 2D electron gas (2DEG), analogous to the recently discovered 2D hole gas in a metal-polar structure, is predicted in a N-polar pseudomorphic GaN/Al(Ga)N heterostructure on unstrained AlN. We report the observation of such 2DEGs in N-polar undoped pseudomorphic GaN/AlGaN heterostructures on single-crystal AlN substrates by molecular beam epitaxy. With a high electron density of ~4.3 ×10 13 /cm 2 that maintains down to cryogenic temperatures and a room temperature electron mobility of ~450 cm 2 /V s, a sheet resistance as low as ~320 Ω/$\Box$ is achieved in a structure with an 8 nm GaN layer. Finally, these results indicate significant potential of AlN platform for future high-power RF electronics based on N-polar III-nitride high electron mobility transistors.

42 ENGINEERING↗
DOE OSTI2021

Thermal hysteresis controlled reconfigurable MoS 2 nanomechanical resonators

Two-dimensional (2D) structures from layered materials have enabled a number of novel devices including resonant nanoelectromechanical systems (NEMS). 2D NEMS resonators are highly responsive to strain, allowing their resonance frequencies to be efficiently tuned over broad ranges, which is a feature difficult to attain in conventional micromachined resonators. In electrically configured and tuned devices, high external voltages are typically required to set and maintain different frequencies, limiting their applications. Here we experimentally demonstrate molybdenum disulfide (MoS 2 ) nanomechanical resonators that can be reconfigured between different frequency bands with zero maintaining voltage in a non-volatile fashion. By leveraging the thermal hysteresis in these 2D resonators, we use heating and cooling pulses to reconfigure the device frequency, with no external voltage required to maintain each frequency. Here, we further show that the frequency spacing between the bands can be tuned by the thermal pulse strength, offering full control over the programmable operation. Such reconfigurable MoS 2 resonators may provide an alternative pathway toward small-form-factor and low-power tunable devices in future reconfigurable radio-frequency circuits with multi-band capability.

42 ENGINEERING↗
NASA NTRS2011

NASA Tech Briefs, August 2011

Topics covered include: Miniature, Variable-Speed Control Moment Gyroscope; NBL Pistol Grip Tool for Underwater Training of Astronauts; HEXPANDO Expanding Head for Fastener-Retention Hexagonal Wrench; Diagonal-Axes Stage for Pointing an Optical Communications Transceiver; Improvements in Speed and Functionality of a 670-GHz Imaging Radar; IONAC-Lite; Large Ka-Band Slot Array for Digital Beam-Forming Applications; Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation; Coupling Between Waveguide-Fed Slot Arrays; PCB-Based Break-Out Box; Multiple-Beam Detection of Fast Transient Radio Sources; Router Agent Technology for Policy-Based Network Management; Remote Asynchronous Message Service Gateway; Automatic Tie Pointer for In-Situ Pointing Correction; Jitter Correction; MSLICE Sequencing; EOS MLS Level 2 Data Processing Software Version 3; DspaceOgre 3D Graphics Visualization Tool; Metallization for Yb14MnSb11-Based Thermoelectric Materials; Solvent/Non-Solvent Sintering To Make Microsphere Scaffolds; Enhanced Fuel-Optimal Trajectory-Generation Algorithm for Planetary Pinpoint Landing; Self-Cleaning Coatings and Materials for Decontaminating Field-Deployable Land and Water-Based Optical Systems; Separation of Single-Walled Carbon Nanotubes with DEP-FFF; Li Anode Technology for Improved Performance; Post-Fragmentation Whole Genome Amplification-Based Method; Microwave Tissue Soldering for Immediate Wound Closure; Principles, Techniques, and Applications of Tissue Microfluidics; Robotic Scaffolds for Tissue Engineering and Organ Growth; Stress-Driven Selection of Novel Phenotypes; Method for Accurately Calibrating a Spectrometer Using Broadband Light; Catalytic Microtube Rocket Igniter; Stage Cylindrical Immersive Display; Vacuum Camera Cooler; Atomic Oxygen Fluence Monitor; Thermal Management Tools for Propulsion System Trade Studies and Analysis; Introduction to Physical Intelligence; Technique for Solving Electrically Small to Large Structures for Broadband Applications; Accelerated Adaptive MGS Phase Retrieval; Large Eddy Simulation Study for Fluid Disintegration and Mixing; Tropospheric Correction for InSAR Using Interpolated ECMWF Data and GPS Zenith Total Delay; Technique for Calculating Solution Derivatives With Respect to Geometry Parameters in a CFD Code; Acute Radiation Risk and BRYNTRN Organ Dose Projection Graphical User Interface; Probabilistic Path Planning of Montgolfier Balloons in Strong, Uncertain Wind Fields; Flight Simulation of ARES in the Mars Environment; Low-Outgassing Photogrammetry Targets for Use in Outer Space; Planning the FUSE Mission Using the SOVA Algorithm; Monitoring Spacecraft Telemetry Via Optical or RF Link; and Robust Thermal Control of Propulsion Lines for Space Missions.

Source record↗
DOE OSTI2022

Annealing temperature variation and its influence on the self-cleaning properties of TiO 2 thin films

Titanium dioxide (TiO 2 ) is an important material in science and engineering because of its basic and synthetic properties. Nevertheless, there is a dearth of reports in the open literature focusing on its ability to self-clean under temperature changes. In this study, we used the spin coating technique to produce TiO 2 thin films to evaluate its self-cleaning ability after annealing at different temperatures. The TiO 2 sol was obtained through an endothermal sol-gel process, and the gel was coated on a glass substrate using a spin coater. The deposited films were then annealed at 400 °C, 600 °C, and 800 °C for 1 h. The influence of annealing temperature variation on the self-cleaning properties of the thin film was characterized using X-ray diffraction, scanning electron microscope; Fourier transformed infrared spectrometric analysis and UV-vis spectrophotometer. A test to ascertain self-cleaning was conducted using the degradation of methylene blue, and the different films were tested for durability. The durability test confirmed the connection between solid coating and substrate at all annealing temperatures. Thin films annealed at 600 °C revealed the best self-cleaning properties. The morphological analysis revealed snowflake shapes uniformly distributed over the substrate at 400 °C, and agglomeration improved as the annealing temperature increased. Structural analysis showed an increase in crystallinity with an increase in annealing temperature for both rutile and anatase phases. At three different temperatures, the chemical bond and the absorption band pattern followed the same path, although the peak intensity declined with temperature rise. Finally, the optical bandgap of the thin coated TiO 2 declined from 3.39 eV to 3.20 eV as the binding temperature increased from 400 to 800 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A fast multi-fidelity method with uncertainty quantification for complex data correlations: Application to vortex-induced vibrations of marine risers

Here we develop a fast multi-fidelity modeling method for very complex correlations between high- and low-fidelity data by working in modal space to extract the proper correlation function. We apply this method to infer the amplitude of motion of a flexible marine riser in cross-flow, subject to vortex-induced vibrations (VIV). VIV are driven by an absolute instability in the flow, which imposes a frequency (Strouhal) law that requires a matching with the impedance of the structure; this matching is easily achieved because of the rapid parametric variation of the added mass force. As a result, the wavenumber of the riser spatial response is within narrow bands of uncertainty. Hence, an error in wavenumber prediction can cause significant phase-related errors in the shape of the amplitude of response along the riser, rendering correlation between low- and high-fidelity data very complex. Working in modal space as outlined herein, dense data from low-fidelity data, provided by the semi-empirical computer code VIVA, can correlate in modal space with few high-fidelity data, obtained from experiments or fully-resolved CFD simulations, to correct both phase and amplitude and provide predictions that agree very well overall with the correct shape of the amplitude response. We also quantify the uncertainty in the prediction using Bayesian modeling and exploit this uncertainty to formulate an active learning strategy for the best possible location of the sensors providing the high fidelity measurements.

42 ENGINEERING↗
DOE OSTI2022

Er-doped anatase TiO 2 thin films on LaAlO 3 (001) for quantum interconnects (QuICs)

Rare-earth ions (REIs) doped into solid-state crystal hosts offer an attractive platform for realizing quantum interconnects that can function as quantum memories and quantum repeaters. The 4f valence electrons of REIs are shielded by 5s and 5p electrons and undergo highly coherent transitions even when embedded in host crystals. In particular, Er 3+ has an optical transition in the telecom band that is suitable for low-loss communication. Recently, REIs in thin film systems have gained interest due to potential advantages in providing a flexible host crystal environment, enabling scalable on-chip integration with other quantum devices. Here, we investigate the structural and optical properties of Er-doped anatase TiO 2 thin films on LaAlO 3 (001) substrates. By choosing a system with minimal lattice mismatch and adjusting Er-dopant concentration, we achieve optical inhomogeneous linewidths of 5 GHz at 4.5 K. Furthermore, we show that 9 nm-thick buffer and capping layers can reduce the linewidth by more than 40%, suggesting a pathway to further narrowing linewidths in this system. We also identify that Er 3+ ions mainly incorporate into substitutional Ti 4+ sites with non-polar D 2d symmetry, which makes Er dopants insensitive to the first order to local electric fields from impurities and is desirable for coherence properties of Er 3+ spins.

42 ENGINEERING↗
DOE OSTI2026

First observation of a high-𝐾 band structure in 162 Er and implications in the context of the identical bands phenomenon

The first ever identification of a high-𝐾 band structure in 162 Er is reported. Based on a 𝐾 𝜋 = 7 (−) isomer, it is found to be identical in nature to the corresponding 𝐾 𝜋 = 7 − sequence in 164 Er up to its highest observed spin. Furthermore, the phenomenon of identical high-K bands built on a two-quasiparticle configuration in an isotopic chain is reported here for the first time. While this is a notable addition to the systematics of known identical bands in nuclei at normal deformation, a satisfactory global understanding of the phenomenon remains elusive.

150 ≤ A ≤ 189↗
DOE OSTI2025

Epitaxial Growth of 2D Core‐Crown SnS 2 /SnSe 2 Heterostructure Through Interfacial Modification with Polyvinylpyrrolidone

Abstract Developing generalized strategies for controlled synthesis of 2D heterostructures remains a significant challenge because the existing approaches often suffer from poor reproducibility and scalability. In this study, a solution synthesis approach for epitaxial core‐crown heterostructures with controlled band alignment, that overcomes these challenges is reported. Polyvinylpyrrolidone (PVP) is used as a structure‐directing agent to reduce lattice mismatch between SnS 2 and SnSe 2 (10‐10) surfaces and direct epitaxial growth of SnSe 2 crown on SnS 2 seed. Additionally, PVP adsorption to the basal plane prevents van der Waals stacking and stabilizes 2D heterostructures during synthesis. Driven by interfacial thermodynamics, the formation of the core‐crown heterostructure is highly reproducible and the size of the 2D heterostructure and relative areas of the core and the crown can be precisely controlled in a two‐step process by varying synthesis times for the seed and the crown. The identified growth pathway for 2D heterostructures can be generalized to other combinations of van der Waals materials to provide a platform for synthesizing micron‐size epitaxial heterostructures with a desired electronic structure for catalysis and microelectronics.

Liu, Lili [Physical and Computational Sciences Dir↗
DOE OSTI2022

Magnetic and transport properties of Fe-doped Weyl semimetal Co 3 Sn 2 S 2

Ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 has recently attracted a lot of interest on account of its large non-saturating magnetoresistance and the high carrier mobility common to topological semimetals. Moreover, the material also provides a platform for studying the interplay between the intrinsic magnetism and topological band structures, which generates a significant anomalous Hall effect. Chemical doping is the usual approach to adjust materials’ properties, and it can lead to fascinating results. Here, we present the influence of Fe-doping on the magnetic and transport properties of polycrystalline Co 3 Sn 2 S 2 . The Fe-doping suppresses the sample’s magnetic order, increases the electrical resistivity, results in a skew-scattering contribution to the anomalous Hall effect and Fe impurities cause the Kondo effect. In addition, we report on the impact of Fe-doping on the magnetoresistance of Co 3 Sn 2 S 2 , where Fe-doping leads to a dramatic decline in magnetoresistance. Furthermore, the hysteresis behavior in the low magnetic field region, detected previously in nanoflake samples only, is observed in both pure and Fe-doped Co 3 Sn 2 S 2 bulk samples. Finally, our findings serve as a reference and source of inspiration for future chemical doping research on topological semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Excellent ballistic impact resistance of Al 0.3 CoCrFeNi multi-principal element alloy with unique bimodal microstructure

Multi-principal element alloys represent a new paradigm in structural alloy design with superior mechanical properties and promising ballistic performance. Here, the mechanical response of Al 0.3 CoCrFeNi alloy, with unique bimodal microstructure, was evaluated at quasistatic, dynamic, and ballistic strain rates. The microstructure after quasistatic deformation was dominated by highly deformed grains. High density of deformation bands was observed at dynamic strain rates but there was no indication of adiabatic shear bands, cracks, or twinning. The ballistic response was evaluated by impacting a 12 mm thick plate with 6.35 mm WC projectiles at velocities ranging from 1066 to 1465 m/s. The deformed microstructure after ballistic impact was dominated by adiabatic shear bands, shear band induced cracks, microbands, and dynamic recrystallization. The superior ballistic response of this alloy compared with similar Al x CoCrFeNi alloys was attributed to its bimodal microstructure, nano-scale L1 2 precipitation, and grain boundary B2 precipitates. Deformation mechanisms at quasistatic and dynamic strain rates were primarily characterized by extensive dislocation slip and low density of stacking faults. Deformation mechanisms at ballistic strain rates were characterized by grain rotation, disordering of the L1 2 phase, and high density of stacking faults.

36 MATERIALS SCIENCE↗