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At least 379 records · Page 21

Method to create cuprate tunnel junctions with atomically sharp interfaces

In this work, we present a method for producing tunnel junctions from cuprate thin films grown by atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Our approach utilizes microfabrication processing and relies on the atomically precise interfaces provided by the ALL-MBE synthesis technique. The method is suitable for a wide range of junction dimensions and materials and allows for more complex designs such as superconducting quantum interference devices and junction arrays. Fully superconducting electrodes ensure that the contact resistances in the devices created by this method remain very low.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Time- and strain-dependent nanoscale structural degradation in phase change epitaxial strontium ferrite films

Topotactic phase transition between metallic, perovskite SrFeO 3 and insulating, Brownmillerite SrFeO 2.5 has been extensively studied due to the potential applications in resistive switching devices for neuromorphic computing. However, its practical utilization as memristors has been hindered by the structural instability of SrFeO 3 , which is often ascribed to the generation of oxygen vacancies to form SrFeO 3-δ . Here we reveal the dominating defects generated in SrFeO 3 epitaxial thin films are atomic scale gaps as a result of interfacial strain. Our correlated time- and strain-dependent measurements show that tensile strained SrFeO 3 films form vertical, nanoscale gaps that are SrO-rich, which are accountable for the observed metal-to-insulator transition over time. While compressively strained or small lattice mismatched SrFeO 3 films mainly yield horizontal gaps with a smaller impact on the in-plane transport. The atomic scale origin of such defects and their impact on device performance need to be further understood in order to integrate phase change materials in oxide electronics.

36 MATERIALS SCIENCE↗

A new era in ferroelectrics

Topological structures in ferroic materials have drawn great interest in recent years due to the richness of the underlying physics and the potential for applications in next generation electronics. Recent advances in atomically precise thin-film materials synthesis and characterization of structural/physical phenomena at unprecedented length/energy/time scales have enabled us to study exotic phases and their associated physics [Rößler et al., Nature 442, 797 (2006); S. Das, Nature 568, 368 (2019); Yadav et al., Nature 530, 198 (2016); and Stoica et al., Nat. Mater. 18, 377 (2019)]. It is appropriate that, in the second century of ferroelectrics, some dramatic discoveries are propelling the field into directions heretofore unimaginable. In this review, we explore the recent progress in ferroelectric-oxide superlattices in which researchers can control structure and physical properties through the application of epitaxial strain, layer thickness, temperature, electric field, etc. We provide a discussion of exotic topological structures (e.g., closure domains, vortices, polar skyrmions, and other exotic phases) and associated functionalities in ferroelectric/paraelectric superlattices. We conclude with a brief overview of and prospects for how the field may evolve in the coming years.

36 MATERIALS SCIENCE↗

Geant4 based positron beam source (GPos) v1.0

GPos is a software that was created to determine the properties of positron beams resulting from the interaction of the LBNL BELLA center PetaWatt laser-driven plasma-capillary accelerated electron beam and the atoms of a thin solid target. GPos is written in C++, easily compiled with cmake and the spack package manager, which allows for multi-thread and MPI parallel computing. Its functions expand on the Geant4 toolkit library and allow for propagation of the modelled particles through vacuum drift distances with a focusing element (thin lens approximation). Users can change beam-foil-drift-lens parameters - to adapt GPos to other particle sources and infrastructures - in a simple input file. The code particle data output format, openPMD, which is compatible, for example, with the input of the ECP WarpX project code used to explore the physics of particle acceleration in plasmas. Using GPos in conjunction to WarpX allowed us to test various configurations for designing a high-quality and high-energy positron source at BELLA -required for us to address positron acceleration challenges in the development of future linear colliders. GPos can also be advantageous when tackling the physics of muon sources for future muon colliders as well as for the investigation of positron sources in lower energy regimes for applications like annihilation spectroscopy and astrophysical gamma-ray-bursts.

Pinto de Almeida Amorim, Ligia↗

Developing a Facile Technology for Converting Domestic US Coal into High-Value Graphene

Universal Matter Ltd. was formed in July 2019 to scale-up and commercialize a breakthrough process, Flash Joule Heating (FJH), to transform different coal grades, into high-quality graphene. This graphene is made using a high-voltage electric discharge that brings the carbon source to temperatures higher than 3,000 K in less than 10 milliseconds. The short burst of electricity breaks all chemical bonds in the feedstock and reorders the carbon atoms into exceptionally thin layers of a special type of graphene, at an estimated $100 per ton in electricity cost. This process is capable of producing 1-5 layer-thick high-quality graphene (with defects of <0.05% and purity of >99%) in a green, practical, and cost-effective process. The graphene produced in the FJH process is a very special kind of graphene called “turbostratic graphene” (TG). TG offers superior physical properties compared to other graphene structures on a similar weight basis. Unlike graphene made from graphite using traditional techniques, the graphene layers in TG stack in an irregular pattern that allows the graphene powder to be exfoliated more easily and blend more evenly within other materials. The TG produced using our FJH technology is the most economical graphene product that opens up significant large volume markets for end-use applications; it would allow the use of TG made from coal for commercial applications in several market segments including energy storage, sensors, hyper-lubricants, reinforced plastics, and building materials such as concrete.

01 COAL, LIGNITE, AND PEAT↗

EBIC/TEM investigations of defects in solar silicon ribbon materials

Transmission electron microscopy was used to investigate the defect structure of edge defined film growth (EFG) material, web dentritic ribbons (WEB), and ribbon to ribbon recrystallized material (RTR). The most common defects in all these materials are coherent first order twin boundaries. These coherent twins can be very thin, a few atomic layers. Bundles of the twins which contain odd numbers of twins will in optical images appear as a seemingly single first twin boundary. First-order coherent twin boundaries are not electrically active, except at locations where they contain intrinsic (grain boundary) dislocations. These dislocations take up small deviations from the ideal twin relation and play the same role in twin boundaries as conventional and play the some role in twin boundaries as conventional edge and screw dislocations in small angle tilt and twist boundaries.

Ast, D. G.↗

Metrological and Spectral Characterization of the Aspera Flight Optics

Aspera is a NASA's Astrophysics Pioneers mission, led by the University of Arizona. The aim of this mission is to study the presence of hot gasses (T=10^5-10^6 K) in the circumgalactic medium (CGM) and how the flow of these gasses affects galactic formation. One key enabling technology in the Aspera optical system is the use of more efficient UV-reflective optical coatings particularly at around 103.2 nm where the O VI emission line is located . In order to meet radiometric effective area requirements, the Goddard Space Flight Center (GSFC) code 551 Optics Branch applied Al (aluminum) + eLiF (enhanced lithium fluoride) on these optics, where the Al+LiF is annealed at elevated temperature (~250˚C) after the deposition and thus providing an improved version of the Al+LiF used in FUSE . Furthermore, these optics are encapsulated with a thin film of atomic layer deposited MgF2 at the Jet Propulsion Laboratory for enhanced durability . The efficiency and durability of these coatings depends on the quality of the optical surface in terms of cleanliness and roughness. Roughness increases the scatter off the coating and reduces the specular reflectance, and surface contaminants can accommodate moisture and other contaminants, increase scattering, and are weak points in the coating that may affect adhesion and subsequently the longevity of these coatings. Extensive optical metrology is necessary to minimize and quantify the impact of surface roughness and contaminants on optical surfaces. In this proceeding we report the inspection procedure implemented for Aspera optics at GSFC, from initial receiving of the optics to post-coating. Inspection includes Atomic Force Microscopy (AFM), Scanning White Light Interferometry (SWILI), Dark Field Microscopy (DFM), Phase Shifting Interferometry (PSI), and Vacuum ultraviolet (VUV) spectroscopy. Combinations of these techniques are used to inspect flight optics at each of the following steps: i) as-received, pre-cleaning inspection, ii) pre-coating, post-cleaning inspection, and iii) post-coating inspection. The evolution of roughness and other surface inspections such as contaminants are compared between each step to quantify the effect each step has on the flight optics. The final far ultraviolet (FUV) spectral performance of witness samples coated with the flight optics are presented.

Far Ultraviolet (FUV)↗

The Effect of Low Earth Orbit Atomic Oxygen Exposure on Phenylphosphine Oxide-Containing Polymers

Thin films of phenylphosphine oxide-containing polymers were exposed to low Earth orbit aboard a space shuttle flight (STS-85) as part of flight experiment designated Evaluation of Space Environment and Effects on Materials (ESEM). This flight experiment was a cooperative effort between the NASA Langley Research Center (LaRC) and the National Space Development Agency of Japan (NASDA). The thin film samples described herein were part of an atomic oxygen exposure experiment (AOE) and were exposed to primarily atomic oxygen (~1 X 1019 atoms/cm2). The thin film samples consisted of three phosphine oxide containing polymers (arylene ether, benzimidazole and imide). Based on post-flight analyses using atomic force microscopy, X-ray photoelectron spectroscopy, and weight loss data, it was found that atomic oxygen exposure of these materials efficiently produces a phosphate layer at the surface of the samples. This layer provides a barrier towards further attack by AO. Consequently, these materials do not exhibit linear erosion rates which is in contrast with most organic polymers. Qualitatively, the results obtained from these analyses compare favorably with those obtained from samples exposed to atomic oxygen and or oxygen plasma in ground based exposure experiments. The results of the low Earth orbit atomic oxygen exposure on these materials will be compared with those of ground based exposure to AO.

Connell, John W.↗

Site-specific surface reactivity on MgO for atomic layer deposition via selective hydration

Atomic layer deposition (ALD) is a powerful technique for thin film synthesis, offering atomic-scale precision and conformality. While ALD of MgO has been widely studied for applications in energy storage and microelectronics, its potential as surface on which deposition may be selective and defects repaired remains underexplored. Here, we present a combined theoretical and experimental investigation of MgO surface hydration and its implications for targeted ALD growth using water and dimethyl aluminum isopropoxide (DMAI) as reactants. We perform density functional theory (DFT) calculations to examine molecular and dissociative H 2 O adsorption on MgO (100) terraces and step-edge sites, including pristine surfaces and those with Mg/O vacancies. Reaction Gibbs free energies are calculated under various conditions to quantify surface reactivity. Our findings reveal facet- and defect-dependent hydration behaviors that align with experimental ALD growth trends on MgO (100). This study provides a molecular-level understanding of MgO surface chemistry critical for optimizing ALD processes for thin film growth and defect repair.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Comparison of AlF 3 thin films grown by thermal and plasma enhanced atomic layer deposition

Films of aluminum fluoride (AlF 3 ) deposited by thermal and plasma enhanced atomic layer deposition (PEALD) have been compared using in situ multiwavelength ellipsometry (MWE) and monochromatic x-ray photoelectron spectroscopy (XPS). The AlF 3 films were grown using cyclic exposures of trimethylaluminum, hydrogen fluoride, and H radicals from a remote H 2 inductively coupled plasma. Films were characterized in situ using MWE and XPS for growth rate, film composition, and impurity incorporation. The MWE showed a growth rate of 1.1 and 0.7 Å per cycle, at 100 °C, for thermal and plasma enhanced ALD AlF 3 films, respectively. Carbon incorporation was below the XPS detection limit. The plasma enhanced ALD AlF 3 film showed the presence of Al-Al chemical states, in the Al 2p scans, suggesting the presence of Al-rich clusters with a concentration of 14%. The Al-rich clusters are thought to originate during the hydrogen plasma step of the PEALD process. Finally, the Al-rich clusters were not detected in thermal ALD AlF 3 films using the same precursors and substrate temperature.

36 MATERIALS SCIENCE↗

Atomic-scale oxygen-vacancy engineering in Sub-2 nm thin Al 2 O 3 /MgO memristors

Ultrathin (sub-2 nm) Al 2 O 3 /MgO memristors were recently developed using an in vacuo atomic layer deposition (ALD) process that minimizes unintended defects and prevents undesirable leakage current. These memristors provide a unique platform that allows oxygen vacancies (V O ) to be inserted into the memristor with atomic precision and study how this affects the formation and rupture of conductive filaments (CFs) during memristive switching. Herein, we present a systematic study on three sets of ultrathin Al 2 O 3 /MgO memristors with V O -doping via modular MgO atomic layer insertion into an otherwise pristine insulating Al 2 O 3 atomic layer stack (ALS) using an in vacuo ALD. At a fixed memristor thickness of 17 Al 2 O 3 /MgO atomic layers (~1.9 nm), the properties of the memristors were found to be affected by the number and stacking pattern of the MgO atomic layers in the Al 2 O 3 /MgO ALS. Importantly, the trend of reduced low-state resistance and the increasing appearance of multi-step switches with an increasing number of MgO atomic layers suggests a direct correlation between the dimension and dynamic evolution of the conducting filaments and the V O concentration and distribution. Understanding such a correlation is critical to an atomic-scale control of the switching behavior of ultrathin memristors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Atomic layer molecular beam epitaxy of kagome magnet RMn6Sn6 (R = Er, Tb) thin films

Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn6Sn6 (R = rare earth) compounds are particularly interesting because of the existence of the large intrinsic anomalous Hall effect (AHE), which originates from the gapped Dirac cones near the Fermi level. This makes RMn6Sn6 an outstanding candidate for realizing the high-temperature quantum AHE. The growth of RMn6Sn6 thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn6Sn6 have focused on bulk crystals, and the synthesis of RMn6Sn6 thin films has not been reported so far. Here, we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn6Sn6 and TbMn6Sn6 thin films. It is especially noteworthy that TbMn6Sn6 thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum AHE. Our work paves the avenue toward the control of the AHE using devices patterned from RMn6Sn6 thin films.

Materials Science↗

H Ly-alpha transmittance of thin foils of C, Si/C, and Al/C for keV particle detectors

A class of instruments designed for remote sensing of space plasmas by measuring energetic neutral atoms (ENA) uses a thin foil as both a signal generator and a light shield. An ENA imager must look directly at the ENA source region, which is also usually an intense source of H Ly-alpha (1216 A) photons. It is desirable to minimize the energy threshold for ENA detectors, at the same time maximizing the blocking of H Ly-alpha. Optimizing filter design to meet these two contrary requirements has led us to measure the transmittance of thin C, Si/C, and Al/C foils at H Ly-alpha. Our results indicate that (1) transmittance of less than 0.0007 can be achieved with 7 micro-g/sq cm Si on 1.7 micro-g/sq cm C; (2) an Si/C composite foil with a thin carbon layer is more effective in blocking UV radiation while having the lowest energy threshold of all the foils measured; and (3) transmittance of Si/C foils of known Si and C thicknesses cannot be accurately predicted, but must be measured.

Drake, V. A.↗

Al 2 O 3 Thin Films on Magnesium: Assessing the Impact of an Artificial Solid Electrolyte Interphase

Among the many emerging technologies under investigation as alternatives to the successful Lithium-ion battery, the magnesium battery is promising due to the wide availability of magnesium, its high volumetric capacity, and the possibility for safety improvements. One of the largest challenges facing rechargeable magnesium batteries is the formation of a passivation layer at the Mg metal anode interface when reactive species in the electrolyte are reduced at the electrode-electrolyte interface. To control the solid electrolyte interphase in Lithium batteries, protective layers called artificial solid electrolyte interphase (ASEI) layers have been successful in improving Li metal anode performance. The approach of protecting Mg metal anodes from electrolyte degradation has been demonstrated by fewer studies in the literature than Li systems. In this work, we discuss the properties of Al 2 O 3 thin films deposited using atomic layer deposition as an artificial solid electrolyte interphase at the Mg anode. Our results demonstrate that Al 2 O 3 does prevent electrolyte degradation due to the reductive nature of Mg. However, undesirable properties such as defects and layer breakdown lead to Mg growth that causes soft-shorting. The soft-shorting occurs with and without the protection layer, indicating the ALD layer does not prevent it and hinders Al 2 O 3 from being an ideal candidate for a protection layer. Crucial effects of this layer on Mg electrochemistry at the interface were observed, including growth of Mg deposits leading to soft-shorting of the cell whose morphology showed a dependence on the Al 2 O 3 layer. These results may provide guidelines for the future design and development of protective ASEI layers for Mg anodes.

25 ENERGY STORAGE↗

Understanding Pore Formation in ALD Alumina Overcoats

AlO X thin films deposited by atomic layer deposition (ALD) have previously been used to increase both stability and selectivity of supported palladium catalysts and are known to develop nanoscale porosity upon heating. Furthermore, understanding the factors that affect ALD thin film porosity would enable future design of layered catalytic structures with tunable nanoscale features on industrially relevant high surface area materials. In this study, porous and nonporous aluminum oxide supports with and without palladium nanoparticles were overcoated with thin films of 2 - 7 nm AlO X by ALD deposited at temperatures of 100 °C, 200 °C and 300 °C. Hydroxyl loss and changes in surface chemistry were observed upon heating the films, and changes in surface area and pore volume of the annealed films were correlated to AlO x deposition temperature and presence of Pd. Crystallization of the overcoat to γ-Al 2 O 3 is shown to occur separately from hydroxyl loss and pore formation. A mechanistic understanding of pore formation in AlO X ALD films is obtained by reference to studies of the structural transformations accompanying the formation of transition aluminas from hydroxide precursors. Additionally, a direct and tunable correlation is established between pore development and the overall hydroxyl content of AlO X ALD coatings.

36 MATERIALS SCIENCE↗