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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Differential electron scattering cross sections for the first optically forbidden and resonance transitions in Mg II, Zn II and Cd II

Differential electron scattering cross sections have been measured for dipole-forbidden and resonance transitions in Mg II, Zn II and Cd II in the angular range theta = 4-17 deg at 50 eV. These provide the first recorded angular distributions for an optically forbidden transition. It is found that while the cross section for excitation of the 4s (2)S-3d(9)4s(2) (2)D transition in Zn II is small, those for the 3s (2)S-3d (2)D, 4s (2)S (unresolved lines) in Mg II, and the 5s (2)S-4d(9)5s(2) D in Cd II are comparable in magnitude with the cross sections for resonance excitation. In addition, for Cd II it is found that the allowed and forbidden transitions have very similar angular distributions, and it is proposed that excitation to the 2D state may be dominated by a virtual 'double-dipole' transition via the 2P state. Also, the total excitation cross section of the resonance 2P state in Cd II is a factor of four higher than that predicted by the Gaunt factor approximation, suggesting that the accepted value for the oscillator strength may be too low.

Williams, I. D.↗
NASA NTRS1988

Effects of crucible wetting during solidification of immiscible Pb-Zn

Many industrial uses for liquid phase miscibility gap alloys are proposed. However, the commercial production of these alloys into useful ingots with a reasonable amount of homogeneity is arduous because of their immiscibility in the liquid state. In the low-g environment of space gravitational settling forces are abated, thus solidification of an immiscible alloys with a uniform distribution of phases becomes feasible. Elimination of gravitational settling and coalescence processes in low-g also makes possible the study of other separation and coarsening mechanisms. Even with gravitational separation forces reduced, many low-g experiments have resulted in severely segregated structures. The segregation in many cases was due to preferential wetting of the crucible by one of the immiscible liquids. The objective was to analyze the wetting behavior of Pb-Zn alloys on various crucible materials in an effort to identify a crucible in which the fluid flow induced by preferential wetting is minimized. It is proposed that by choosing the crucible for a particular alloy so that the difference in surface energy between the solid and two liqud phases is minimized, the effects of preferential wetting can be diminished and possibly avoided. Qualitative experiments were conducted and have shown the competitive wetting behavior of the immiscible Pb-Zn system and 13 different crucible materials.

Degroh, Henry C., III↗
NASA NTRS1989

Effects of crucible wetting during solidification of immiscible Pb-Zn alloys

Many industrial uses for liquid phase miscibility gap alloys are proposed. However, the commercial production of these alloys into useful ingots with a reasonable amount of homogeneity is arduous because of their immiscibility in the liquid state. In the low-g environment of space gravitational settling forces are abated, thus solidification of an immiscible alloy with a uniform distribution of phases becomes feasible. Elimination of gravitational settling and coalescence processes in low-g also makes possible the study of other separation and coarsening mechanisms. Even with gravitational separation forces reduced, many low-g experiments have resulted in severely segregated structures. The segregation in many cases was due to preferential wetting of the crucible by one of the immiscible liquids. The objective was to analyze the wetting behavior of Pb-Zn alloys on various crucible materials in an effort to identify a crucible in which the fluid flow induced by preferential wetting is minimized. It is proposed that by choosing the crucible for a particular alloy so that the difference in surface energy between the solid and two liquid phases is minimized, the effects of preferential wetting can be diminished and possibly avoided. Qualitative experiments were conducted and have shown the competitive wetting behavior of the immiscible Pb-Zn system and 13 different crucible materials.

De Groh, H. C., III↗
NASA NTRS1989

Purification, growth, and characterization of Zn(x)Cd(1-x)Se crystals

The purification of starting materials which were used in the growth of Zn(x)Cd(1-x)Se (x = 0.2) single crystals using the traveling solution method (TSM) is reported. Up to 13 cm long single crystals and as grown resistivities of 6 x 10(exp 12) ohm/cm could be achieved. Infrared and Raman spectra of Zn(0.2)Cd(0.8)Se are also presented and discussed.

Silberman, E.↗
NASA NTRS1993

Radiative lifetimes, branching rations, and absolute transition probabilities in Cr II and Zn II

New absolute atomic transition probability measurements are reported for 12 transitions in Cr II and two transitions in Zn II. These transition probabilities are determined by combining branching ratios measured by classical techniques and radiative lifetimes measured by time-resolved laser-induced fluorescence. The measurements are compared with branching fractions, radiative lifetimes, and transition probabilities in the literature. The 206 nm resonance multiplets in Cr II and Zn II are included in this work. These multiplets are very useful in determining the distribution of the elements in the gas versus grain phases in the interstellar medium.

Bergeson, S. D.↗
NASA NTRS1993

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Burshtein, Z.↗
NASA NTRS1993

Excitation cross sections for the ns 2S yields np 2P resonance transitions in Mg(+) (n = 3) and Zn(+) (n = 4) using electron-energy-loss and merged-beams methods

Electron-excitation cross sections are reported for the 3s 2S yields 3p 2P(h, k) resonance transition in Mg(+) at energies from threshold (4.43 eV) to approximately 9 times threshold (40.0 eV). The electron-energy-loss merged-beams technique used in these measurements is described in detail. In addition, the method of separating contributions of the elastically scattered (Coulomb) and the inelastically scattered electrons in the present Mg(+) case and previously reported Zn(+) results is described. Comparisons in the experimental energy range are made for Mg(+) with the two five-state close-coupling theoretical calculations carried out herein, and with other published close-coupling, distorted-wave, and semiempirical calculations. The present Mg(+) cross sections and Zn(+) cross sections from earlier measurements are tabulated.

Smith, Steven J.↗
NASA NTRS1995

A critical analysis of interstellar Zn and Cr as galactic abundance benchmarks for quasar absorbers

We present interstellar gas-phase abundances of zinc and chromium in the Milky Way for comparison with the abundances of these elements in damped Ly-alpha systems at redshifts near z approximately 2. We make use of both IUE (International Ultraviolet Explorer) and GHRS (Goddard High Resolution Spectrograph) archival information in deriving the Milky Way values and find that the average difference in (Zn/H) and (Cr/Zn) between the Milky Way and damped Ly-alpha systems at large N(H1) is about 0.9 dex. The Zn/H values we find for the Milky Way are approximately -0.2 to -0.7 dex below solar and are due in large part to depletion of Zn onto dust grains. The amount of this gas-phase depletion is variable and depends upon the H1 column density and molecular fraction of the gas. Milky Way sight lines having low molecular fractions have values of (Zn/H) within approximately 0.2 dex of the solar value. Combined with larger values of (Cr/Zn) found for the damped Ly-alpha systems, this result confirms that measures of (Zn/H) should accurately reflect the lower gas-phase abundances of Zn found in these systems.

Sembach, Kenneth R.↗
NASA NTRS1993

Characterization of precipitates in CdTe and Cd(1-x)Zn(x)Te grown by vertical Bridgman-Stockbarger technique

Different polishing solutions were tested for exposing precipitates in CdTe and Cd(0.96)Zn(0.04) single crystals grown by vertical Bridgman-Stockbarger technique. A solution of 5-7% Br2 in methanol and E-solution were both effective. High resolution scanning electron microscopy with energy dispersive spectroscopy (SEM/EDS) was employed to characterize those exposed precipitates. Most of the polyhedral-shaped Te precipitates with a size range from 3 to 20 microns had voids inside. Partially dissolved Te precipitates were observed in CdTe samples that had been annealed in Cd vapor at 700 C for 10 min. Isolated areas mis-oriented from the matrix were observed in CdTe and Cd(0.96)Zn(0.04)Te that had been annealed in Cd vapor at 700 C for 20 and 50 h, respectively. Te precipitate images were recorded with EDS. By SEM/EDS, Cd-rich precipitates were observed in some Cd-annealed CdTe. C and Na impurities were detected in some Te precipitates.

Shen, J.↗
NASA NTRS1996

Thermal Diffusivity and Conductivity of Hg(1-x)Zn(x)Te Solids and Melts

The thermal diffusivity of pseudobinary Hg(1-x)Zn(x)Te solids and melts was measured by the laser flash method. The measured diffusivities for the solids of 0.10 less than or equal to x less than or equal to 0.30 are about 60% of that of the HgTe solid. Those for the melts rise rapidly with temperature but less so with increasing x. For x = 0.30, the diffusivity of the melt is about one third of that of the HgTe melt. Using the calculated beat capacity data from the associated solution model and measured density values, the thermal conductivity for the pseudobinary Hg(1-x)Zn(x)Te solids of 0.10 less than or equal to x less than or equal to 0.30 and for the melts of x = O.10, 0.16, and 0.30 was determined.

Sha, Yi-Gao↗
NASA NTRS2005

Impurity Studies of Cd(0.8)Zn(0.2)Te Crystals Using Photoluminescence and Glow Discharge Mass Spectroscopy

Cd(1-x)Zn(x)Te semiconductor crystal is a highly promising material for room temperature x- and gamma-ray detector applications because of its high resistivity, long carrier lifetime, and relatively high hole and electron mobilities. This paper reports the investigation of the impurities in several Cd(1-x)Zn(x)Te (x = 0.20) crystals grown using the vertical Bridgman method under a Cd overpressure. The impurity concentrations were measured using glow discharge mass spectroscopy (GDMS). The energy states of the impurities were studied using photoluminescence (PL) spectroscopy at liquid helium temperature. The PL spectra showed a series of sharp high energy lines which are associated with free excitons and excitons bound to impurities as donors and acceptors in the crystals. The impurities also contributed to donor-acceptor pair recombination. The correlation between the GDMS and PL results will be reported.

Su, Ching-Hua↗
NASA NTRS1996

Preparation and Thermoelectric Properties of Semiconcucting Zn(sub 4) Sb(sub 3)

Hot-pressed samples fothe semiconducting compound Beta - Zn(sub 4) Sb(sub 3) were prepared and characterized by x-ray and microprobe analysis. Some physical properties of Beta - Zn(sub 4) Sb(sub 3) were determined and its thermoelectric properties measured between room temperature and 650K.

Beta Zn4Sb3 semiconductors semiconductor compounds↗
NASA NTRS2022

Electroactive ZnO: Mechanisms, Conductivity, and Advances in Zn Alkaline Battery Cycling

Zinc oxide is of great interest for advanced energy devices because of its low cost, wide direct bandgap, non-toxicity, and facile electrochemistry. In zinc alkaline batteries, ZnO plays a critical role in electrode passivation, a process that hinders commercialization and remains poorly understood. Here, novel observations of an electroactive type of ZnO formed in Zn-metal alkaline electrodes are disclosed. The electrical conductivity of battery-formed ZnO is measured and found to vary by factors of up to 104, which provides a first-principles-based understanding of Zn passivation in industrial alkaline batteries. Simultaneous with this conductivity change, protons are inserted into the crystal structure and electrons are inserted into the conduction band in quantities up to ≈1020 cm−3 and ≈1 mAh gZnO−1. Electron insertion causes blue electrochromic coloration with efficiencies and rates competitive with leading electrochromic materials. The electroactivity of ZnO is evidently enabled by rapid crystal growth, which forms defects that complex with inserted cations, charge-balanced by the increase of conduction band electrons. This property distinguishes electroactive ZnO from inactive classical ZnO. Knowledge of this phenomenon is applied to improve cycling performance of industrial-design electrodes at 50% zinc utilization and the authors propose other uses for ZnO such as electrochromic devices.

Brendan E. Hawkins↗
DOE OSTI2021

Texture and microstructure evolution in thermomechanically processed Mg-Ca and Mg-Zn-Ca alloys

Mg-Zn-Ca alloys have the potential for producing Mg alloy sheets with weaker basal textures and therefore improved formability. Thermomechanical processing (TMP) also plays a substantial role in determining the final sheet texture. The interplay of these variables, TMP and alloying, complicates comparisons of alloys across the literature. This work systematically explores the texture evolution and recrystallization behavior in Mg-Ca and Mg-Zn-Ca alloys during plane strain compression (PSC) using a Gleeble thermomechanical simulator. It is demonstrated that the basal texture intensity and texture characteristics change significantly during post-deformation annealing, particularly in the ternary alloys. It is also shown that careful selection of the TMP processing variables used during PSC is essential to producing weak textures. In particular, it is important to limit the recrystallization that occurs between compressive hits. This is achieved by adjusting solute content, strain rate, and the duration of the soak between passes.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Zn(GaSe2)2 by Materials Project

ZnGa2Se4 crystallizes in the tetragonal I-4 space group. The structure is three-dimensional. Zn2+ is bonded to four equivalent Se2- atoms to form ZnSe4 tetrahedra that share corners with eight GaSe4 tetrahedra. All Zn–Se bond lengths are 2.50 Å. There are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four equivalent Se2- atoms to form GaSe4 tetrahedra that share corners with four equivalent ZnSe4 tetrahedra and corners with four equivalent GaSe4 tetrahedra. All Ga–Se bond lengths are 2.46 Å. In the second Ga3+ site, Ga3+ is bonded to four equivalent Se2- atoms to form GaSe4 tetrahedra that share corners with four equivalent ZnSe4 tetrahedra and corners with four equivalent GaSe4 tetrahedra. All Ga–Se bond lengths are 2.46 Å. Se2- is bonded in a trigonal non-coplanar geometry to one Zn2+ and two Ga3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Zn(GaTe2)2 by Materials Project

ZnGa2Te4 crystallizes in the tetragonal I-4 space group. The structure is three-dimensional. Zn2+ is bonded to four equivalent Te2- atoms to form ZnTe4 tetrahedra that share corners with eight GaTe4 tetrahedra. All Zn–Te bond lengths are 2.69 Å. There are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four equivalent Te2- atoms to form GaTe4 tetrahedra that share corners with four equivalent ZnTe4 tetrahedra and corners with four equivalent GaTe4 tetrahedra. All Ga–Te bond lengths are 2.67 Å. In the second Ga3+ site, Ga3+ is bonded to four equivalent Te2- atoms to form GaTe4 tetrahedra that share corners with four equivalent ZnTe4 tetrahedra and corners with four equivalent GaTe4 tetrahedra. All Ga–Te bond lengths are 2.68 Å. Te2- is bonded in a trigonal non-coplanar geometry to one Zn2+ and two Ga3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Zn(FeO2)2 by Materials Project

ZnFe2O4 is Spinel structured and crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. Fe3+ is bonded to six equivalent O2- atoms to form FeO6 octahedra that share corners with six equivalent ZnO4 tetrahedra and edges with six equivalent FeO6 octahedra. All Fe–O bond lengths are 2.05 Å. Zn2+ is bonded to four equivalent O2- atoms to form ZnO4 tetrahedra that share corners with twelve equivalent FeO6 octahedra. The corner-sharing octahedral tilt angles are 58°. All Zn–O bond lengths are 2.00 Å. O2- is bonded to three equivalent Fe3+ and one Zn2+ atom to form a mixture of distorted edge and corner-sharing OZnFe3 trigonal pyramids.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Zn(InTe2)2 by Materials Project

ZnIn2Te4 crystallizes in the tetragonal I-4 space group. The structure is three-dimensional. Zn2+ is bonded to four equivalent Te2- atoms to form ZnTe4 tetrahedra that share corners with eight InTe4 tetrahedra. All Zn–Te bond lengths are 2.70 Å. There are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to four equivalent Te2- atoms to form InTe4 tetrahedra that share corners with four equivalent ZnTe4 tetrahedra and corners with four equivalent InTe4 tetrahedra. All In–Te bond lengths are 2.85 Å. In the second In3+ site, In3+ is bonded to four equivalent Te2- atoms to form InTe4 tetrahedra that share corners with four equivalent ZnTe4 tetrahedra and corners with four equivalent InTe4 tetrahedra. All In–Te bond lengths are 2.86 Å. Te2- is bonded in a trigonal non-coplanar geometry to one Zn2+ and two In3+ atoms.

36 MATERIALS SCIENCE↗