The development of low elastic webbings for use in the fabrication of restraint harnesses
Development of nylon-linen webbing material for restraint harness in Apollo spacecraft
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Development of nylon-linen webbing material for restraint harness in Apollo spacecraft
An experimental stress analysis was undertaken to evaluate stresses within cylindrically hollow reinforced webbed bearing balls proportioned for a 50 percent mass reduction. Strain gage rosettes were used to determine principal strains and stresses in the steel ball models, which were statically loaded in various orientations. Results are reported for 127 mm (5 in.) outside diameter balls under 44,500 N (10,000 lb) loads. Similitude considerations permit these results to be applied to calculations of stresses in actual size drilled bearing balls proportioned to these mass reductions.
The influence of metallic impurities on solar cell characteristics has been examined to establish the cost sensitive purity versus performance trade-offs. Solar cells were fabricated on 2 to 4 ohm-cm p-type substrates obtained by Czochralski and dendritic web growth processes. Controlled amounts of metallic impurities were introduced into the melt during growth and included Fe, Cr, Mn, Ni, Cu, Ti, V, Zr, Mg, Zn, and Al. Impurity concentrations in the crystals were determined using emission and mass spectrographic techniques and in some cases by neutron activation analysis. The solar cells were characterized by means of a computer program to curve-fit measured voltage-current data. The principal effect of the added impurities is a degradation of lifetime and diffusion length.
Melt replenishment system sustains continuous growth of silicon dentritic web for several days. Substantially increases size of batch, limited mainly by level of impurities and life of crucible. Silicon pellets automatically added to crucible sustain crystal growth for days.
Strategically placed slot helps to control critical thermal gradients in crucible for silicon web growth. Slot thermally isolates feed region of crucible from growth region; region where pellets are added stays hot. Heat absorbed by pellets during melting causes thermal unbalance than upsets growth conditions.
The web growth process, a silicon-sheet technology option, developed for the flat plate solar array (FSA) project, was examined. Base case data for the technical and cost parameters for the technical and commercial readiness phase of the FSA project are projected. The process add on price, using the base case data for cost parameters such as equipment, space, direct labor, materials and utilities, and the production parameters such as growth rate and run length, using a computer program developed specifically to do the sensitivity analysis with improved price estimation are analyzed. Silicon price, sheet thickness and cell efficiency are also discussed.
Experimental techniques for the preparation of electron beam induced current samples of Web-dentritic silicon are described. Both as grown and processed material were investigated. High density dislocation networks were found close to twin planes in the bulk of the material. The electrical activity of these networks is reduced in processed material.
The computer code for calculating web temperature distribution was expanded to provide a graphics output in addition to numerical and punch card output. The new code was used to examine various modifications of the J419 configuration and, on the basis of the results, a new growth geometry was designed. Additionally, several mathematically defined temperature profiles were evaluated for the effects of the free boundary (growth front) on the thermal stress generation. Experimental growth runs were made with modified J419 configurations to complement the modeling work. A modified J435 configuration was evaluated.
Modeling in the development of low stress configurations for wide web growth is presented. Parametric sensitivity to identify design features which can be used for dynamic trimming of the furnace element was studied. Temperature measurements of experimental growth behavior led to modification in the growth system to improve lateral temperature distributions.
A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C.
Curved cross-sectional elements are employed in structural concepts for minimum-mass compression panels. Corrugated panel concepts with curved caps and beaded webs are optimized by using a nonlinear mathematical programming procedure and a rigorous buckling analysis. These panel geometries are shown to have superior structural efficiencies compared with known concepts published in the literature. Fabrication of these efficient corrugation concepts became possible by advances made in the art of superplastically forming of metals. Results of the mass optimization studies of the concepts are presented as structural efficiency charts for axial compression.
The temperature distributions which are present during the growth of ribbon crystals generate stresses which can adversely affect the growth or perfection of the material. Several different effects occur which depend on the magnitude and distribution of these stresses. In most cases, the observed phenomena are the result of complex interactions of a number of mechanisms. In many instances, however, one mechanism predominates to such an extent that a simplified distinction between the various effects can be made. Definitions based on observed behavior in dendritic web growth are outlined.
Electrical characteristics of thin (100- and 140-micron) Westinghouse dendritic-web N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. Performance is also shown as a function of solar illlumination angle of incidence for AMO.
The distribution of slip dislocations in silicon dendritic web ribbons due to plastic deformation during the cooling phase of the growth was studied. The results show the existence of two distinguishable stress regions across the ribbon formed during the plastic deformation stage, namely, shear stress at the ribbon edges and tensile stress at the middle. In addition, slip dislocations caused by shear stress near the edges appear to originate at the twin plane.
Progress made in the study of defect characterization of silicon dendritic web ribbon is presented. Chemical etching is used combined with optical microscopy, as well as the electron beam induced current (EBIC) technique. Thermal annealing effect on carrier lifetime is examined.
Twenty-five minimodules composed of dendritic web solar cells with nominal glass size of 12 by 40 cm were provided for study. The modules were identical with respect to design, materials, and manufacturing and assembly processes to full scale modules. The modules were also electrically functional. These minimodules were fabricated to provide test vehicle for environmental testing and to assess reliability of process and design procedures. The module design and performance are outlined.
The effect of a low-energy (0.4 keV), short-time (2-min), heavy-dose (10 to the 18th/sq cm) hydrogen ion implant on dendritic web silicon solar cells and material was investigated. Such an implant was observed to improve the cell open-circuit voltage and short-circuit current appreciably for a number of cells. In spite of the low implant energy, measurements of internal quantum efficiency indicate that it is the base of the cell, rather than the emitter, which benefits from the hydrogen implant. This is supported by the observation that the measured minority-carrier diffusion length in the base did not change when the emitter was removed. In some cases, a threefold increase of the base diffusion length was observed after implantation. The effects of the hydrogen implantation were not changed by a thermal stress test at 250 C for 111 h in nitrogen. It is speculated that hydrogen enters the bulk by traveling along dislocations, as proposed recently for edge-defined film-fed growth silicon ribbon.
Study of dendritic-web growth of single-crystal silicon casts doubts on previously accepted physical concepts of process.