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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Development of energy-absorbing reaction-sintered Si3N4 surface layers on hot-pressed Si3N4

Energy-absorbing Si3N4 surface layers on dense Si3N4 substrates were formed by in-place nitridation of fine-grained silicon powder. Ballistic impact tests performed on samples with 1-mm thick layers at room temperature and 1370 C showed up to an eightfold increase in the energy necessary to fracture the substrate. For maximum impact resistance, a small amount (about 20 vol %) of residual Si must be present in the reaction-sintered Si3N4 surface layer. Thermal cycling to 1370 C did not affect impact resistance, even though a considerable amount of SiO2 formed within the reaction-sintered Si3N4 layer during cycling. Erosion testing of samples in a Mach 0.8 burner rig at 1370 C resulted in minimal surface recession of the surface layer. Chemically vapor-deposited SiC-coated material similarly tested exhibited no surface recession.

Brennan, J. J.↗
NASA NTRS1980

Thermal barrier coatings for superalloys

The current status of ceramic thermal barrier coatings for protection of turbine airfoil components is reviewed. Test results for an early duplex coating system ZrO2-12% Y2O3/Ni-16% Cr-6% Al-0.6% Y, improved system ZrO2-8% Y2O3/Ni-17% Cr-5% Al-0.35% Y, and air/fuel impurity tolerant systems based on ZrO2-8% Y2O3, 2CaO-SiO2, and a MgO-NiCrAlY cermet are discussed. Preliminary test results at 800 C for a graded ZrO2-8% Y2O3/Ni-20% Cr-11% Al-0.4% Y coating system show that the coating can survive at least 500 hr in the presence of 50 ppm V plus other fuel contaminants and additives.

Miller, R. A.↗
NASA NTRS1981

Silicon carbide as an oxidation-resistant high-temperature material. 1: Oxidation and heat corrosion behavior

The oxidation and corrosion behavior of SiC (in the form of a SiC powder) and hot-pressed and reaction-bound material were studied. The excellent stability of SiC in an oxidizing atmosphere is due to the development of protective SiO2 coatings. Any changes in these protective layers (e.g., due to impurities, reaction with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of SiC application.

Schlichting, J.↗
NASA NTRS1981

Low temperature growth and electrical characterization of insulators for GaAs MISFETS

Progress in the low temperature growth of oxides and layers on GaAs and the detailed electrical characterization of these oxides is reported. A plasma anodization system was designed, assembled, and put into operation. A measurement system was assembled for determining capacitance and conductance as a function of gate voltage for frequencies in the range from 1 Hz to 1 MHz. Initial measurements were carried out in Si-SiO2 capacitors in order to test the system and in GaAs MIS capacitors abricated using liquid anodization.

Borrego, J. M.↗
NASA NTRS1981

Method of preventing oxidation of graphite fireproof material

A method of preventing oxidation of graphite fireproof material is given. A blend of 1 to 33 weight parts alumina and 3 to 19 parts of K2O + Na2O in 100 parts of SiO2 is pulverized followed by addition of 5 to 160 parts of silicon carbide powder in 100 parts of the mixture. This is thoroughly blended and coated on the surface of graphite fireproof material.

Yamauchi, S.↗
NASA NTRS1981

Ion-beam-enhanced adhesion in the electronic stopping region

The use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials is described. In particular, the bonding of Au films to Teflon, ferrite, and SiO2 was improved by bombarding them with He and Cl, respectively. Improvements in bonding were also observed for Au on glass, Au and Cu on sapphire, and Si3N4 on Si. The mechanism is apparently associated with sputtering and track forming processes occurring in the electronic stopping region. Some applications are discussed.

Griffith, J. E.↗
NASA NTRS1974

High modulus invert analog glass compositions containing beryllia

Glass compositions having a Young's modulus of at least 15 million psi and a specific modulus of at least 110 million inches consisting essentially of, in mols, 10-45% SiO2, 2-15% Li2O, 3-34% BeO, 12-36% of at least one bivalent oxide selected from the group consisting of CaO, ZnO, MgO and CuO, 10-39% of at least one trivalent oxide selected from the group consisting of Al2O3, B2O3, La2O3, Y2O3 and the mixed rare earth oxides, the total number of said bivalent and trivalent oxides being at least three, and up to 10% of a tetravalent oxide selected from the group consisting of ZrO2, TiO2 and CeO2.

Bacon, J. F.↗
NASA NTRS1974

Non-toxic invert analog glass compositions of high modulus

Glass compositions having a Young's modulus of at least 15 million psi are described. They and a specific modulus of at least 110 million inches consist essentially of, in mols, 15 to 40% SiO2, 6 to 15% Li2O, 24 to 45% of at least two bivalent oxides selected from the group consisting of Ca, NzO, MgO and CuO; 13 to 39% of at least two trivalent oxides selected from the group consisting of Al2O3, Fe2O3, B2O3, La2O3, and Y2O3 and up to 15% of one or more tetravelent oxides selected from the group consisting of ZrO2, TiO2 and CeO2. The high modulus, low density glass compositions contain no toxic elements. The composition, glass density, Young's modulus, and specific modulus for 28 representative glasses are presented. The fiber modulus of five glasses are given.

Bacon, J. F.↗
NASA NTRS1976

High modulus rare earth and beryllium containing silicate glass compositions

Glass compositions having a Young's modulus of at least 16 million psi and a specific modulus of at least 110 million inches consisting essentially of approximately, by weight, 20 to 43% SiO2, 8 to 21% Al2O3, 4 to 10% BeO, 27 to 58% of at least one oxide selected from a first group consisting of Y2O3, La2O3, Nd2O3, Ce2O3, Ce2O3, and the mixed rare earth oxides, and 3 to 12% of at least one oxide selected from a second group consisting of MgO, ZrO2, ZnO and CaO are described. The molar ratio of BeO to the total content of the first group oxides is from 1.0 to 3.0.

Bacon, J. F.↗
NASA NTRS1982

Use of fiber like materials to augment the cycle life of thick thermoprotective seal coatings

Some experimental and analytical studies of plasma sprayed ZrO2-Y2O3 thick seal thermoprotective materials over NiCrAlY bond coats with testing to 1040 deg C in a Mach 0.3 burner flame are reviewed. These results indicate the need for material to have both compliance and sufficient strength to function successfully as a thick thermoprotective seal material. Fibrous materials may satisfy many of these requirements. A preliminary analysis simulating the simplified behavior of a 25 mm cylindrical SiO2-fiber material indicated significant radial temperature gradients, a relatively cool interface and generally acceptable stresses over the initial portion of the thermal cycle. Subsequent testing of these fiberlike materials in a Mach 0.3 Jet A/air burner flame confirmed these results.

Hendricks, R. C.↗
NASA NTRS1981

Undoped semi-insulating LEC GaAs - A model and a mechanism

Undoped semi-insulating GaAs grown by the high-pressure liquid encapsulated Czochralski (LEC) method has been produced for use in direct ion implantation in several laboratories. A clear understanding of the factors controlling impurity transport and compensation in these materials has been lacking to date. In this work, detailed characterization has been performed on undoped semi-insulating crystals grown from both SiO2 and PBN crucibles followed by a proposed impurity model and compensation mechanism.

Oliver, J. R.↗
NASA NTRS1981

Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

Grunthaner, P. J.↗
NASA NTRS1981

Metal/silicon interface formation - The Ni/Si and Pd/Si systems

The valence level spectra of the Ni/Si and Pd/Si systems have been investigated using high resolution X-ray photoelectron spectroscopy. Temperature dependence studies for Ni deposited on thin thermal SiO2 demonstrate the importance of metal aggregation effects in the interpretation of binding energies as chemical shifts. Temperature studies for the Ni/Si system indicate that substantial chemical interaction occurs at the interface at temperatures as low as 100 K. These studies also show the presence of Ni in interstitial voids in the Si near the interface. A comparative study of the core and valence band features for the Ni and Pd silicides provides many valuable insights and a self-consistent picture of the attendent valence charge redistribution and its influence on the observed chemical shifts.

Grunthaner, P. J.↗
NASA NTRS1980

Predictions of mineral assemblages in planetary interiors

It is shown that mineral compatibilities in the model system CaO-MgO-Al2O3-SiO2 can be applied to deduce the mineral assemblages expected in planetary interiors and their variation with depth. In general, the available estimates of bulk composition of the terrestrial planets suggest that the terrestrial planets can be divided into two groups based on their predicted mineral assemblages. The terrestrial, Venusian, and lunar bulk compositions are expected to display the following sequence of mineral assemblages with increasing pressure: plagioclase lherzolite, spinel lherzolite, and garnet lherzolite. The sequences expected in Martian and Mercurian are different: spinel-plagioclase wehrlite, spinel lherzolite, and spinel-garnet wehrlite. These assemblages have a major influence on the compositions of liquids produced by melting of these planetary interiors, on the solidus temperatures, and thus on the nature of planetary differentiation and the types of magmas extruded at planetary surfaces.

Stolper, E.↗
NASA NTRS1982

Preliminary modeling of high pressure partial melting - Implications for early lunar differentiation

A quantitative model is presented for equilibrium crystallization of lunar magmas at high pressure, which, viewed in reverse, is equivalent to equilibrium partial melting. Data are extrapolated from simple systems, mare basalt systems, and from experiments on terrestrial compositions. Liquidus phase equilibria in a portion of the CaO-MgO-Al2O3-SiO2 system serve as a guide for predicting phase equilibria in the natural system. High pressure partial melting sequences are calculated for several proposed whole moon compositions at nominal pressure of 10 and 20 kb. Results show that compositions with chondritic Ca/Al have quite different melting paths from those with subchondritic Ca/Al, and as a result the types of magmas produced are quite different. If the moon possesses a chondritic Ca/Al ratio, models which rely on small degrees of partial melting to produce the early lunar magnetism are suspect.

Longhi, J.↗
NASA NTRS1982

Experimental studies of the vapor phase nucleation of refractory compounds. I - The condensation of SiO

The critical partial pressure of SiO necessary to initiate avalanche nucleation in the SiO-H2 system is measured as a function of the ambient temperature in the range 750-1000 K. Results show that the condensate produced at low temperatures is Si2O3, while a mixture of Si2O3 and amorphous SiO2 is produced at high temperatures. A surface energy of approximately 500 ergs/sq cm for the particles is found by analyzing the critical partial pressure vs temperature using classical nucleation theory. It is concluded that classical nucleation theory is not applicable to this system, because several inconsistencies in the thermodynamic analysis are demonstrated, and it is suggested that a kinetic theory of nucleation may be the preferential way to describe the condensation process.

Nuth, J. A.↗
NASA NTRS1981

Optimization of large area solar cells for low cost space application

The development of large-area solar cell manufacturing techniques for production of up to 10 kW/month of cells for use on the Shuttle Power Extension Package is detailed. Design goals for the cells were 14% efficiency at 135.3 mW/sq cm AM0 illumination for a 10 ohm-cm BSF/reflector cell, or 12.8% for a 2 ohm-cm BSR cell. Use of terrestrial cell technology to produce CVD SiO2 dielectric insulators for 3-in. ingot cells yielded satisfactory contact integrity. Fused silica coverings with thicknesses of 0.004 in. have allowed exploration of conventional and wraparound cell configurations due to inherent flexibilities of the frosted covers. One production run can now handle 108 3-in. wafers for the wraparound form or 216 in one-sided contact evaporations, with both processes taking 70 mins. Current contact grid designs for space use production permits average efficiencies of 12.8%.

Matthei, K. W.↗
NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗