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Circuit protects ac power systems for overload failures, limits power surge and short-circuit currents to 150 percent of steady state level, regulates ac output voltage, and soft starts loads. Limiter generates dc error signal in response to line fluctuations and dumps power when overload is reached. Device is inserted between ac source and load.
Electronic load-bank circuit provides pulsed or continuous low-resistance load to imitate effect of short circuit on Ni/H2 or other electrochemical power cells. Includes safety/warning feature and taps for measurement of cell-output voltage and current.
The IBM Thinkpad 760XD has been used in the Orbiter and International Space Station since 2000. The Thinkpad is powered by a Panasonic Li-ion battery that has a voltage of 10.8 V and 3.0 Ah capacity. This Thinkpad is now being replaced by the IBM Thinkpad A31P which has a Panasonic Li-ion battery that has a voltage of 10.8 V and 4.0 Ah capacity. Both batteries have protective circuit boards. The Panasonic battery for the Thinkpad 760XD had 12 Panasonic 17500 cells of 0.75 Ah capacity in a 4P3S cOnfiguration. The new Panasonic battery has 6 Panasonic 18650 cells of 2.0 Ah capacity in a 2P3S configuration. The batteries and cells for both models have been evaluated for performance and safety. A comparison of the cells under similar test conditions will be presented. The performance of the cells has been evaluated under different rates of charge and discharge and different temperatures. The cells have been tested under abuse conditions and the safety features in the cells evaluated. The protective circuit board in the battery was also tested under conditions of overcharge, overdischarge, short circuit and unbalanced cell configurations. The results of the studies will be presented in this paper.
Abstract In the field of non‐fullerene organic solar cells (OSCs), compared to the rapid development of non‐fullerene acceptors, the progress of high‐performance donor polymers is relatively slow. The property and performance of donor polymers in OSCs are often sensitive to the molecular weight of the polymers. In this study, a chlorinated donor polymer named D18‐Cl is reported, which can achieve high performance with a wide range of polymer molecular weight. The devices based on D18‐Cl show a higher open‐circuit voltage ( V OC ) due to the slightly deeper energy levels and an outstanding short‐circuit current density ( J SC ) owing to the appropriate long periods of blend films and less ([6,6]‐phenyl‐C71‐butyric acid methyl ester) (PC 71 BM) in mixed domains, leading to the higher efficiency of 17.97% than those of the D18‐based devices (17.21%). Meanwhile, D18‐Cl can achieve high efficiencies (17.30–17.97%) when its number‐averaged molecular weight ( M n ) is ranged from 45 to 72 kDa. In contrast, the D18‐based devices only exhibit relatively high efficiencies in a narrow M n range of ≈70 kDa. Such property and performance make D18‐Cl a promising donor polymer for scale‐up and low‐cost production.
The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 28 C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.
Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.
In(0.53)Ga(0.47)As N-on-P concentrator cells were made as part of an effort to develop 1.315 micron laser power converters. The 1.315 micron laser power conversion efficiency was estimated as 29.4 percent (at 5.57 W/cm(sup 2)) based on an 86 percent measured external quantum efficiency at 1.315 microns, and a measured open circuit voltage (484 mV), and fill-factor (67 percent) at the equivalent AM0 short-circuit photocurrent (5.07 A/cm(sup 2)). A 13.5 percent percent AMO efficiency was achieved at 89 suns and 25 C. Measured one-sun and 100-sun AMO efficiency, log I-V analysis, and quantum efficiency are presented for InGaAs cells with and without InP windows to passivate the front surface. Windowed cells performed better at concentration than windowless cells. Lattice mismatch between InGaAs epilayers and InP substrate was less than 800 ppm. Theoretical efficiency is estimated for 1.315 microns laser power converters versus the bandgap energy. Adding aluminum to InGaAs to form In(x)Al(y)Ga(1-x-y)As is presented as a way to achieve an optimal bandgap for 1.315 microns laser power conversion.
A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V. It is estimated that the actual area AMO efficiency of this cell is 6.6 percent with an assumed value of 0.75 for its fill factor. Efforts made for fabricating an IL/MOS cell with reasonable efficiencies are reported. Future work for 4 sq cm IL cells and 25 sq cm IL cells is discussed.
A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.
Device durability remains a significant challenge in photoelectrochemical (PEC) water splitting under ambient conditions. Yet, a lack of understanding of the test configuration and applied bias effects continue to hinder progress. In this study, we differentiate two-electrode (2E) and three-electrode (3E) configurations for evaluating PEC material durability, focusing particularly on their impacts on photoabsorber solid-state operating conditions. Our results underscore the fallacy of inferring 2E device stability from durability measurements performed solely in 3E configurations. Unmeasured and often misunderstood total circuit bias in 3E tests moderates material degradation, leading to the overestimation of photoelectrode stability compared to short-circuit operation. We demonstrate how the photoabsorber's operating voltage critically governs charge separation, surface stability, and degradation mechanisms during PEC operation. With these findings, we propose a standardized framework for conducting more reliable 3E durability experiments that simulate unassisted performance to help accelerate the development of robust, stable materials for solar-driven water splitting.
Effective but bulky coaxial stub replaced. Short-circuited microstrip transmission line serves as reactive loading element for microstrip antenna. Constructed integrally with stripline radiating element, shorted line preserves low microstrip profile and enables tuning of antenna for two-band operation.
Faults in wiring systems are a serious concern for the aerospace and aeronautic (commercial, military, and civilian) industries. Circuit failures and vehicle accidents have occurred and have been attributed to faulty wiring created by open and/or short circuits. Often, such circuit failures occur due to vibration during vehicle launch or operation. Therefore, developing non-intrusive fault-tolerant techniques is necessary to detect circuit faults and automatically route signals through alternate recovery paths while the vehicle or lunar surface systems equipment is in operation. Electrical connector concepts combining dust mitigation strategies and cable diagnostic technologies have significant application for lunar and Martian surface systems, as well as for dusty terrestrial applications. The dust-tolerant intelligent electrical connection system has several novel concepts and unique features. It combines intelligent cable diagnostics (health monitoring) and automatic circuit routing capabilities into a dust-tolerant electrical umbilical. It retrofits a clamshell protective dust cover to an existing connector for reduced gravity operation, and features a universal connector housing with three styles of dust protection: inverted cap, rotating cap, and clamshell. It uses a self-healing membrane as a dust barrier for electrical connectors where required, while also combining lotus leaf technology for applications where a dust-resistant coating providing low surface tension is needed to mitigate Van der Waals forces, thereby disallowing dust particle adhesion to connector surfaces. It also permits using a ruggedized iris mechanism with an embedded electrodynamic dust shield as a dust barrier for electrical connectors where required.
Limiting circuit protects the main power supply of electronic modules and limits the current drawn by each module should a short circuit occur. It limits current within one mA when used with direct current of either polarity, or with pulse or ac power sources from direct current to 100 kHz.
A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.
Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.
A 30 kW class arcjet Power Conditioning Unit, PCU, was built and tested during this Phase 2 SBIR contract. The PCU is an improved version of two previously developed PCU's. All of these units are 3-phase, 20 kHz buck regulators with current mode feed back to modulate the duty cycle to control the arcjet current at any selected operating point. The steady state control can assure arcjet stability despite the negative dynamic resistance of the arc discharge. The system also has a circuit to produce a high voltage start pulse to breakdown the gas and initiate the arc. The start pulse is formed by temporarily switching a short current path across the output terminals with a special solid state switching array. The switches then open rapidly, and the energy stored in the output inductors of the buck regulator produces a pulse of approximately 2500 V for approximately 500 nsec. The system was tested and modified until the transition to steady operation occurred after start up with a very small surge current overshoot. The system also can withstand a direct short circuit across the output without damage. The automatic feed back control simply reduces the duty cycle to hold the current at the set point. When the short is removed the full power output is immediately restored. This latest version arcjet PCU is conduction cooled to remove waste heat by conduction to the base plate. This unit is closer to flight a type of design than the previous functional bread boards. Waste heat is small because the PCU has a very high efficiency, 296 percent. The PCU was extensively tested with resistor loads to simulate operation with an arcjet. The unit was tested with ammonia arcjets at the Jet Propulsion Laboratory. Approximately 400 hours of testing were completed, with several starts. Many hours were also demonstrated with resistive loads. Some testing with hydrogen arcjets was also carried out at NASA LeRC. This system concept is now the design base for the ATTD program.
Particle accelerators use many different types of magnets. There is an interest in replacing rather low-field conventional resistive magnets with high-temperature superconducting (HTS) magnets. The main goal is to reduce operational expenses, which is critical during the continuously increasing cost of electricity. At Fermilab, several HTS accelerator magnets were built and successfully tested. The paper described a variant of the double-aperture dipole magnet that could be suitable for future Lepton Colliders. A single short-circuited HTS coil of 3.8 kA generates a homogeneous magnetic field of 57 mT in both magnet gaps of 84 mm. The short model magnet was designed, built, and successfully tested at liquid nitrogen temperature. This magnet works in a persistent current mode, which provides additional cost savings when used in particle storage rings operated at a stable magnetic field. The results of design, fabrication, and tests are presented and discussed. The magnet demonstrated a high magnetic field stability in both apertures, efficiency of correction coils, and primary powering circuit.
Circuit protects all output lines of switching regulator against overloads without requiring current sensors on every line. If overload is sensed, device short circuits bias on switching transistor so that power is rapidly cut off from loads. Circuit also includes delay network to inhibit erroneous operation during startup.