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At least 379 records · Page 21

Effect of Water Concentration in LiPF 6 -Based Electrolytes on the Formation, Evolution, and Properties of the Solid Electrolyte Interphase on Si Anodes

A trace amount of water in an electrolyte is one of the factors detrimental to the electrochemical performance of silicon (Si)-based lithium-ion batteries that adversely affect the formation and evolution of the solid electrolyte interphase (SEI) on Si-based anodes and change its properties. Thus far, a lack of fundamental and mechanistic understanding of SEI formation, evolution, and properties in the presence of water has inhibited efforts to stabilize the SEI for improved electrochemical performance. As such, we investigated the SEI formed in a Gen2 electrolyte (1.2 M LiPF6 in ethylene carbonate/ethyl methyl carbonate, 3:7 wt %, water content: <10 ppm) with and without additional water (50 ppm) at varying potentials (1.0, 0.5, 0.2, and 0.01 V vs Li/Li + ). The impact of additional water on the morphological, (electro)chemical, and structural properties of SEI was studied using microscopic (atomic force microscopy and scanning spreading resistance microscopy) and spectroscopic (X-ray photoelectron spectroscopy, attenuated total reflection Fourier-transform infrared spectroscopy, and time-of-flight secondary ion mass spectrometry) techniques. The SEI exhibits both potential- and water concentration-dependent trends in its morphology and chemical composition. The presence of additional water in the electrolyte causes parasitic reactions, which onset at ~1.0 V, resulting in a reduction of electrolyte components and result in the formation of an insulating, fluorophosphate-rich SEI. In addition, hydrolysis of LiPF 6 creates hydrofluoric acid, which reacts with the surface oxide layer on the Si electrode, leading to a pitted and inhomogeneous SEI structure.

36 MATERIALS SCIENCE↗

SI-PET-RAFT Polymerization via Electrodeposited Macroinitiator Thin Films: Toward Biomedical and Sensing Applications

Surface-initiated photoinduced electron transfer-reversible addition–fragmentation chain transfer (SI-PET-RAFT) polymerization has been preferentially used for preparing thin polymeric film coatings due to its simple execution under ambient conditions (e.g., in air) and visible light requirement. In this study, we demonstrate the preparation of polymer brushes by SI-PET-RAFT polymerization on a thin macroinitiator film electrodeposited on electrically conductive indium tin oxide and gold surfaces. An electrochemically active carbazole-containing chain transfer agent as macroinitiator was shown to be not only effective in mediating SI-PET-RAFT polymerization for various monomers but also capable of forming block copolymers. Additionally, the fabricated polymer brush films were able to encapsulate colloidal gold nanoparticles, thereby demonstrating potential use for biomedical and sensing applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-Temperature Thermodynamics of Cerium Silicates, A-Ce 2 Si 2 O 7 , and Ce 4.67 (SiO 4 ) 3 O

Lanthanide disilicates and oxyapatites have potential roles in high temperature applications as thermal (TBC) and environmental barrier coatings (EBC), or possible alteration phases in geological nuclear waste repositories. However, those Ce 3+ -bearing silicates have only been limitedly studied. In this work, we performed detailed structural and thermodynamic investigations on A-Ce 2 Si 2 O 7 (tetragonal, P4 1 ) and Ce 4.67 (SiO 4 ) 3 O (hexagonal, P6 3 /m). The high temperature structural behaviors and coefficients of thermal expansion were determined by in situ high temperature synchrotron X-ray diffraction (HT-XRD) implemented with Rietveld analysis and thermogravimetric analysis coupled with differential scanning calorimetry (TGA-DSC). A-Ce 2 Si 2 O 7 was found to be stable in N 2 and air up to ~1483 K with anisotropic thermal expansion along the a and c axes (α a = 12.3 × 10 -6 K -1 and α c = 12.4 × 10 -6 K -1 ). Ce 4.67 (SiO 4 ) 3 O had a slow partial oxidation between 533 K and 873 K to a new nonstoichiometric phase Ce 3+ 1.67- xCe4 + x Ce 3+ 3 (SiO 4 ) 3 O 1+0.5x , followed by a thermal decomposition to CeO 2 and SiO 2 at ~1000 K in air. By using high temperature oxide melt solution calorimetry at 973 K with lead borate as the solvent, the standard enthalpy of formation was determined for A-Ce 2 Si 2 O 7 (-3825.1 ± 6.0 kJ/mol) and Ce 4.67 (SiO 4 ) 3 O (-7391.3 ± 9.5 kJ/mol). Finally, these thermodynamic parameters were compared with those of CeO 2 , CeSiO 4 , and other silicate oxyapatites for examining their chemical stability in high temperature environments relevant for aeronautical applications, mineral formation, and nuclear fuel cycle.

36 MATERIALS SCIENCE↗

Energetics of Salt-Bearing Sodalites, Na 8 Al 6 Si 6 O 24 X 2 (X = SO 4 , ReO 4 , Cl, I): A Treatment Option for Pertechnetate-Enriched Nuclear Waste Streams

An alternative option for treating anion-enriched reprocessed nuclear waste streams is to immobilize technetium-99 ( 99 Tc, β = 293.7 keV, t 1/2 = 2.1 × 10 5 years) and other anions in micro- and mesoporous materials. Here we determine the thermodynamic stability of anion bearing sodalites, Na 8 Al 6 Si 6 O 24 X 2 (X = SO 4 , ReO 4 , Cl, I), to improve our understanding of the driving forces that control framework assembly using high temperature oxide melt solution calorimetry. Raman and FTIR spectroscopy illustrate a strong dependence for vibrational features on anion size and enabled the development of a linear model that predicted the vibrational features for numerous anion bearing sodalites to within ±20 cm –1 (i.e., OH, F, Br, ClO 4 , NO 3 , and MnO 4 ). The largest negative enthalpy of formation from elements and the lack of structural water demonstrate that the perrhenate sodalite (Na 8 Al 6 Si 6 O 24 [ReO 4 ] 2 ), a chemical analogue for pertechnetate sodalite (Na 8 Al 6 Si 6 O 24 [TcO 4 ] 2 ), is more thermodynamically stable than all other anion bearing sodalites evaluated. The enthalpies of the reaction between nepheline and the sodium salt, which provides the guest anion species, was negative only for the ReO 4 and NO 3 bearing sodalites. Overall, we report for the first time the enthalpy of the ion exchange reactions for different anion bearing sodalites relative to the perrhenate sodalite, which is a key step in gaining the ability to tune sodalite material properties and structure during treatment and the immobilization of 99 Tc in the presence of competing anions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Impact of dual-layer solid-electrolyte interphase inhomogeneities on early-stage defect formation in Si electrodes

While intensive efforts have been devoted to studying the nature of the solid-electrolyte interphase (SEI), little attention has been paid to understanding its role in the mechanical failures of electrodes. Here we unveil the impact of SEI inhomogeneities on early-stage defect formation in Si electrodes. Buried under the SEI, these early-stage defects are inaccessible by most surface-probing techniques. With operando full field diffraction X-ray microscopy, we observe the formation of these defects in real time and connect their origin to a heterogeneous degree of lithiation. This heterogeneous lithiation is further correlated to inhomogeneities in topography and lithium-ion mobility in both the inner- and outer-SEI, thanks to a combination of operando atomic force microscopy, electrochemical strain microscopy and sputter-etched X-ray photoelectron spectroscopy. Our multi-modal study bridges observations across the multi-level interfaces (Si/LixSi/inner-SEI/outer-SEI), thus offering novel insights into the impact of SEI homogeneities on the structural stability of Si-based lithium-ion batteries. Severe structural deformation during (de)lithiation is the main factor limiting the stability of Si anodes in Li-ion batteries. Here, a multi-modal approach is used to visualize these deformations in their early-stage and link them to inhomogeneities in the dual-layer solid-electrolyte interphase.

25 ENERGY STORAGE↗

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K.

Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.

36 MATERIALS SCIENCE↗

Developing of nano sized fibrous eutectic silicon in hypereutectic Al–Si alloy by laser remelting

Laser surface melting followed by rapid solidification is an effective means to produce very fine microstructures with desirable surface properties because of the high rates of cooling associated with it. In the present study, the effect of rapid cooling on the silicon particle size, distribution, and morphology of hypereutectic Al–17wt.%Si and Al–20wt.%Si alloys have been investigated. A continuous-wave CO2 laser of wavelength 10.6 μm and a Trumpf Yb-YAG disk laser of wavelength 1.030 μm were used with a beam diameter of 1 mm and scanning speeds ranging from 5 to 100 mm/s. Rapid solidification increased the solubility of silicon in aluminum to approximately 5wt% and induced non-equilibrium hypoeutectic microstructures comprising large volume fractions of primary α-Al dendrites and ultrafine Al–Si eutectic of lamellar morphology. Both α-Al dendrites and the silicon particle sizes were significantly reduced from micron to nanoscale level. The morphology of silicon particles is modified from massive polygonal and plate-like to a mixture of fine fakes with round corners, feathery and fibrous, or a coral-like and thread-like structure. The eutectic silicon size and the interlamellar spacing were reduced to 30 and 10 nm, respectively. Furthermore, most of the silicon crystals in the eutectic region and the aluminum dendrites contained a significant number of twins which were considered as an essential contributor to the mechanism of growth and branching. Microhardness values increased two to threefold due to the refinement of the microstructural constituent.

42 ENGINEERING↗

Optical and electrochemical effects of H 2 and O 2 bubbles at upward-facing Si photoelectrodes

The effects of the size, contact-angle, and coverage of gas bubbles on solar fuels devices were characterized at cm-scale, upward-facing planar and microwire-array Si photoelectrodes in stagnant electrolytes. Experimental measurements were supported by ray-tracing simulations of surface attached gas bubble films. A dilute, redox-active tracer allowed for the quantification of the mass-transport effects of bubble coverage during photoanodic O 2 (g) evolution at upward-facing photoanodes in 1.0 M KOH(aq.). Measurements of the gas coverage at upward-facing p-Si photocathodes in 0.50 M H 2 SO 4 (aq.) allowed for the nucleation rate and contact angle of H 2 (g) bubbles to be evaluated for systems having various surface free energies. Under simulated solar illumination, the rapid departure of small O 2 (g) bubbles produced stable photocurrents at upward-facing oxygen-evolving Si photoanodes and yielded increased mass-transport velocities relative to a stagnant electrolyte, indicating that bubbles can provide a net benefit to the photoelectrochemical performance of an upward-facing photoanode in solar fuels devices.

14 SOLAR ENERGY↗

The role of chemical potential in compensation control in Si:AlGaN

Reduction in compensation in Si-doped Al-rich AlGaN is demonstrated via chemical potential control (CPC). The chemical potentials and the resulting formation energies of carbon on the nitrogen site (C N ) and cation vacancy complex with Si (V III + nSi III ) were related to growth variables through a thermodynamic supersaturation model, which quantitatively predicted the incorporation of C N and the generation of the V III + nSi III complex. The compensation “knee” behavior, i.e., decreasing conductivity with increasing Si incorporation beyond a certain concentration, was successfully controlled. The maximum free carrier concentration was improved by impeding the formation of V III + nSIi III complexes under III-richer conditions, while the impurity compensation by C N was reduced by making the growth environment N-richer. The results of Hall effect measurement and photoluminescence agreed well with quantitative theoretical predictions of the CPC model. Based on the developed model, the highest conductivity of 160 Ω -1 cm -1 with free carrier concentration of 3 × 10 19 cm -3 in Al 0.7 Ga 0.3 N ever reported was achieved on single crystal AlN substrates. The demonstrated predictive power of the CPC model should greatly reduce the empirical analysis or iterative experimentation that would otherwise be necessary.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.

36 MATERIALS SCIENCE↗

Nanoscale laser flash measurements of diffuson transport in amorphous Ge and Si

The thermal properties of amorphous materials have attracted significant attention due to their technological importance in electronic devices. In addition, the disorder-induced breakdown of the phonon gas model makes vibrational transport in amorphous materials a topic of fundamental interest. In the past few decades, theoretical concepts, such as propagons, diffusons, and locons, have emerged to describe different types of vibrational modes in disordered solids. However, experiments can struggle to accurately determine which types of vibrational states carry the majority of the heat. In this study, we use nanoscale laser flash measurements (front/back time-domain thermoreflectance) to investigate thermal transport mechanisms in amorphous Ge and amorphous Si thin-films. We observe a nearly linear relationship between the amorphous film’s thermal resistance and the film’s thickness. The slope of the film’s thermal resistance vs thickness corresponds to a thickness-independent thermal conductivity of 0.4 and 0.6 W/(m K) for a-Ge and a-Si, respectively. This result reveals that the majority of heat currents in amorphous Si and Ge thin films prepared via RF sputtering at room temperature are carried by diffusons and/or propagons with mean free paths less than a few nanometers.

36 MATERIALS SCIENCE↗

Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.

Physics↗

Electronic band structure and magnetism of CoFeV 0.5 Mn 0.5 Si

Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV 0.5 Mn 0.5 Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV 0.5 Mn 0.5 Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( T c = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV 0.5 Mn 0.5 Si has a potential for room temperature spin-transport-based devices.

36 MATERIALS SCIENCE↗

Role of Si substitution in modulating the coercivity and magnetic anisotropy in Fe3CoB2 nanocrystallites

In this work, we report the impact of Si substitution on the structural and magnetic properties of Fe3CoB2 nanocrystallites as a rare-earth-free hard-magnet candidate. X-ray diffraction confirmed the formation of the tetragonal phase with an average crystallite size of ∼40 nm, while the transmission electron microscopy image revealed nanosized crystallites embedded in an amorphous matrix. Room-temperature Mössbauer spectra exhibited two sextets and two doublets, indicating magnetically ordered Fe sites in the tetragonal phase along with high-spin paramagnetic FeIII species in disordered regions. ZFC–FC magnetization curves displayed field-dependent blocking behavior, consistent with paramagnetic Fe species. Singular point detection measurements revealed a high anisotropy field of ∼10.7 kOe in the pristine Fe3CoB2, and systematically decreased with Si substitution. Magnetization measurements revealed a monotonic decrease in saturation magnetization with Si content, while coercivity was observed to increase, likely due to microstructural refinement. These results establish Fe3CoB2 as a rare-earth-free material with strong magnetic anisotropy, ideal for hard magnets.

Abbas, Hur [Department of Physics, University of T↗

Magnetic properties of the Ising-like rare earth pyrosilicate: D-Er 2 Si 2 O 7

Ising-like spin-1/2 magnetic materials are of interest for their ready connection to theory, particularly in the context of quantum critical behavior. In this work we report detailed studies of the magnetic properties of a member of the rare earth pyrosilicate family, D-Er 2 Si 2 O 7 , which is known to display a highly anisotropic Ising-like g-tensor and effective spin-1/2 magnetic moments. We used powder neutron diffraction, powder inelastic neutron spectroscopy (INS), and single crystal AC susceptibility to characterize its magnetic properties. Neutron diffraction enabled us to determine the magnetic structure below the known transition temperature (T N = 1.9 K) in zero field, confirming that the magnetic state is a four-sublattice antiferromagnetic structure with two non-collinear Ising axes, as was previously hypothesized. Our powder INS data revealed a gapped excitation at zero field, consistent with anisotropic (possibly Ising) exchange. An applied field of 1 T produces a mode softening, which is consistent with a field-induced second order phase transition. To assess the relevance of D-Er 2 Si 2 O 7 to the transverse field Ising model, we performed AC susceptibility measurements on a single crystal with the magnetic field oriented in the direction transverse to the Ising axes. This revealed a transition at 2.65 T at 0.1 K, a field significantly higher than the mode-softening field observed by powder INS, showing that the field-induced phase transitions are highly field-direction dependent as expected. Furthermore, these measurements suggest that D-Er 2 Si 2 O 7 may be a candidate for further exploration related to the transverse field Ising model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

K-Shell photoabsorption in Si 11+ : Relativistic contributions via Breit-Pauli R-matrix calculations

As a part of the investigation of the entire Si isonuclear sequence for x-ray spectral diagnostics, we focus on the Li-like Si 11+ ion, a stable component that features prominently in x-ray astrophysical spectra. In this work, we perform R-matrix calculations for the photoabsorption cross section of Si 11+ including relativistic contributions via the use of a Breit-Pauli Hamiltonian. Relativistic effects—predominantly spin-orbit splitting of resonances and mass-velocity and one-body Darwin global shifts of energies— are shown to be tractable and of importance for accuracy in x-ray spectral modeling data banks.

74 ATOMIC AND MOLECULAR PHYSICS↗

Global perspectives of the bulk electronic structure of URu 2 Si 2 from angle-resolved photoemission

Previous high-resolution angle-resolved photoemission (ARPES) studies of URu 2 Si 2 have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level ( E F ) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states interact with other hole-band states that are generally absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a more global k -space context for the presence of such states and their relation to the bulk Fermi surface (FS) topology using synchrotron-based wide-angle and photon energy-dependent ARPES mapping of the electronic structure using photon energies intermediate between the low-energy regime and the high-energy soft x-ray regime. Small-spot spatial dependence, f -resonant photoemission, Si 2 p core-levels, x-ray polarization, surface-dosing modification, and theoretical surface slab calculations are employed to assist identification of bulk versus surface state character of the E F -crossing bands and their relation to specific U- or Si-terminations of the cleaved surface. The bulk FS topology is critically compared to density functional theory (DFT) and to dynamical mean field theory calculations. In addition to clarifying some aspects of the previously measured high symmetry Γ, Z and X points, incommensurate 0.6 a * nested Fermi-edge states located along Z – N – Z are found to be distinctly different from the DFT FS prediction. The temperature evolution of these states above T HO , combined with a more detailed theoretical investigation of this region, suggests a key role of the N -point in the hidden order transition.

36 MATERIALS SCIENCE↗

Charge density wave and superconductivity competition in Lu 5 Ir 4 Si 10 : A proton irradiation study

Real-space modulated charge density waves (CDW) are a ubiquitous feature in many families of superconductors. In particular, how CDW relates to superconductivity is an active and open question that has recently gathered much interest since CDWs have been discovered in many cuprates superconductors. Here we show that disorder induced by proton irradiation is a full-fledged tuning parameter that can bring essential information to answer this question as it affects CDW and superconductivity with different and unequivocal mechanisms. Specifically, in the model CDW superconductor Lu 5 Ir 4 Si 10 that develops a 1D CDW below 77 K and s-wave superconductivity below 4 K, we show that disorder enhances the superconducting critical temperature T c and H c2 while it suppresses the CDW. Discussing how disorder affects both superconductivity and the CDW, we make a compelling case that superconductivity and CDW are competing for electronic density of states at the Fermi level in Lu 5 Ir 4 Si 10 , and we reconcile the results obtained via the more common tuning parameters of pressure and doping. Owing to its prototypical, 1D, Peierls type CDW and the s-wave, weak-coupling nature of its superconductivity, this irradiation study of Lu 5 Ir 4 Si 10 provides the basis to understand and extend such studies to the more complex cases of density waves and superconductivity coexistence in heavy fermions, Fe-based, or cuprates superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗