Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SI”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

Lord, Kenneth↗
NASA NTRS2001

Coupling between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing SilSiGe monolithic microwavdmillimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented. A discussion of the electric and magnetic field distributions for the coupled microstrip lines is presented to provide a physical rationale for the presented results.

Ponchak, George E.↗
NASA NTRS2004

Magnetic Fe, Si, Al-Rich Impact Spherules from the P-T Boundary Layer at Graphite Peak, Antarctica

The geological boundary between Triassic and Permian strata coincides with the greatest life extinction in the Earth's history. Although the cause of the extinction is still the subject of intense debates, recent discoveries in the P-T boundary layer of shocked quartz grains, fullerenes with the extraterrestrial noble gases, Fe metal nuggets, and chondritic meteorite fragments all point to a powerful collision of Earth with a celestial body in the late Permian. Here we report the discovery of magnetic Fe, Si, Al-rich impact spherules which accompany the chondritic meteorite fragments in some samples from the P-T boundary layer at Graphite Peak, Antarctica.

Petaev, M. I.↗
NASA NTRS2005

Measurement of Recoil Losses and Ranges for Spallation Products Produced in Proton Interactions with Al, Si, Mg at 200 and 500 MeV

Cosmic rays interact with extraterrestrial materials to produce a variety of spallation products. If these cosmogenic nuclides are produced within an inclusion in such material, then an important consideration is the loss of the product nuclei, which recoil out of the inclusion. Of course, at the same time, some atoms of the product nuclei under study may be knocked into the inclusion from the surrounding material, which is likely to have a different composition to that of the inclusion [1]. For example, Ne-21 would be produced in presolar grains, such as SiC, when irradiated in interstellar space. However, to calculate a presolar age, one needs to know how much 21Ne is retained in the grain. For small grains, the recoil losses might be large [2, 3] To study this effect under laboratory conditions, recoil measurements were made using protons with energies from 66 - 1600 MeV on Si, Al and Ba targets [3, 4, 5].

Sisterson, J. M.↗
NASA NTRS1997

A Chemical and Structural Study of the A1N-Si Interface

Samples of A1N grown on silicon [111] subtrates were examined using electron enery loss spectroscopy (EELS) and selected area diffraction (SAD) with high-resolution transmission electron microscopy (TEM) to determine the source of out-of-place tilts and in-plane rotations of the A1N crystallites at the Si interface.

silicon out-of-plane tilts in-plane rotations sili↗
NASA NTRS1997

A Chemical and Structural Study of the AlN-Si Interface

The growth of low defect density heteroepitaxial AlN has great implications for optoelectronic and high power devices since the AlN can be used either as device material or as a buffer layer for the overgrowth of other group-III nitrides. In this work, the results of transmission electron microscopy (TEM) involving both high resolution imaging and electron energy loss spectroscopy (EELS) of AlN/Si layers is reported and the relationship between Si-Al-N interactions and the misorientation of AlN nuclei is elucidated.

epitaxial optoelectronic silicon gallium nitride↗
NASA NTRS2006

In Orbit Performance of Si Avalanche Photodiode Single Photon Counting Modules in the Geoscience Laser Altimeter System on ICESat

Si avalanche photodiode (APD) single photon counting modules (SPCMs) are used in the Geoscience Laser Altimeter System (GLAS) on Ice, Cloud, anti land Elevation Satellite (ICESat), currently in orbit measuring Earth surface elevation and atmosphere backscattering. These SPCMs are used to measure cloud and aerosol backscatterings to the GLAS laser light at 532-nm wavelength with 60-70% quantum efficiencies and up to 15 millions/s maximum count rates. The performance of the SPCMs has been closely monitored since ICESat launch on January 12, 2003. There has been no measurable change in the quantum efficiency, as indicated by the average photon count rates in response to the background light from the sunlit earth. The linearity and the afterpulsing seen from the cloud and surface backscatterings profiles have been the same as those during ground testing. The detector dark count rates monitored while the spacecraft was in the dark side of the globe have increased almost linearly at about 60 counts/s per day due to space radiation damage. The radiation damage appeared to be independent of the device temperature and power states. There was also an abrupt increase in radiation damage during the solar storm in 28-30 October 2003. The observed radiation damage is a factor of two to three lower than the expected and sufficiently low to provide useful atmosphere backscattering measurements through the end of the ICESat mission. To date, these SPCMs have been in orbit for more than three years. The accumulated operating time to date has reached 290 days (7000 hours). These SPCMs have provided unprecedented receiver sensitivity and dynamic range in ICESat atmosphere backscattering measurements.

Sun, X.↗
NASA NTRS2005

A New Large-Well 1024x1024 Si:As Detector for the Mid-Infrared

We present a description of a new 1024x1024 Si:As array designed for ground-based use from 5 - 28 microns. With a maximum well depth of 5e6 electrons, this device brings large-format array technology to bear on ground-based mid-infrared programs, allowing entry to the mega-pixel realm previously only accessible to the near-IR. The multiplexer design features switchable gain, a 256x256 windowing mode for extremely bright sources, and it is two-edge buttable. The device is currently in its final design phase at DRS in Cypress, CA. We anticipate completion of the foundry run in October 2005. This new array will enable wide field, high angular resolution ground-based follow up of targets found by space-based missions such as the Spitzer Space Telescope and the Wide-field Infrared Survey Explorer (WISE).

astronomy↗
NASA NTRS1991

Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

Lin, True-Lon↗
NASA NTRS2006

Induction of Micronuclei in Human Fibroblasts across the Bragg Curve of Energetic Si and Fe Ions

The space environment consists of a varying field of radiation particles including high-energy ions, with spacecraft shielding material providing the major protection to astronauts from harmful exposure. Unlike low-LET gamma or X-rays, the presence of shielding does not always reduce the radiation risks for energetic charged particle exposure. Since the dose delivered by the charged particle increases sharply as the particle approaches the end of its range, a position known as the Bragg peak, the Bragg curve does not necessarily represent the biological damage along the particle traversal since biological effects are influenced by the track structure of both primary and secondary particles. Therefore, the biological Bragg curve is dependent on the energy and the type of the primary particle, and may vary for different biological endpoints. We studied micronuclei (MN) induction across the Bragg curve of Si and Fe ions at incident energies of 300 MeV/nucleon and 1 GeV/nucleon. A quantitative biological response curve did not reveal an increased yield of MN at the location of the Bragg peak. However, the ratio of mono- to bi-nucleated cells, which indicates inhibition in cell progression, increased at the Bragg peak location. These results confirm the hypothesis that severely damaged cells at the Bragg peak are likely to go through reproduction death.

Wu, H.↗
NASA NTRS2003

Process for Smoothing an Si Substrate after Etching of SiO2

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Turner, Tasha↗
NASA NTRS2010

K-shell Photoionization of Na-like to Cl-like Ions of Mg, Si, S, Ar, and Ca

We present R-matrix calculations of photoabsorption and photoionization cross sections across the K edge of Mg, Si, S, Ar, and Ca ions with more than 10 electrons. The calculations include the effects of radiative and Auger damping by means of an optical potential. The wave functions are constructed from single-electron. orbital bases obtained using a Thomas-Fermi-Dirac statistical model potential. Configuration interaction is considered among all states up to n = 3. The damping processes affect the resonances converging to the K-thresholds causing them to display symmetric profiles of constant width that smear the otherwise sharp edge at the photoionization threshold. These data are important for the modeling of features found in photoionized plasmas.

Witthoeft, M. C.↗
NASA NTRS2014

Phase Equilibrium Experiments on Potential Lunar Core Compositions: Extension of Current Knowledge to Multi-Component (Fe-Ni-Si-S-C) Systems

Numerous geophysical and geochemical studies have suggested the existence of a small metallic lunar core, but the composition of that core is not known. Knowledge of the composition can have a large impact on the thermal evolution of the core, its possible early dynamo creation, and its overall size and fraction of solid and liquid. Thermal models predict that the current temperature at the core-mantle boundary of the Moon is near 1650 K. Re-evaluation of Apollo seismic data has highlighted the need for new data in a broader range of bulk core compositions in the PT range of the lunar core. Geochemical measurements have suggested a more volatile-rich Moon than previously thought. And GRAIL mission data may allow much better constraints on the physical nature of the lunar core. All of these factors have led us to determine new phase equilibria experimental studies in the Fe-Ni-S-C-Si system in the relevant PT range of the lunar core that will help constrain the composition of Moon's core.

Righter, K.↗
NASA NTRS2014

Evaluating Primary Dendrite Trunk Diameters in Directionally Solidified Al-Si Alloys

The primary dendrite trunk diameters of Al-Si alloys that were directionally solidified over a range of processing conditions have been measured. These data are analyzed with a model based primarily on an assessment of secondary dendrite arm dissolution in the mushy zone. Good fit with the experimental data is seen and it is suggested that the primary dendrite trunk diameter is a useful metric that correlates well with the actual solidification processing parameters. These results are placed in context with the limited results from the aluminium - 7 wt. % silicon samples directionally solidified aboard the International Space Station as part of the MICAST project.

Grugel, R. N.↗
NASA NTRS2014

A 0.18 micrometer CMOS Thermopile Readout ASIC Immune to 50 MRAD Total Ionizing Dose (SI) and Single Event Latchup to 174MeV-cm(exp 2)/mg

Radiation hardened by design (RHBD) techniques allow commercial CMOS circuits to operate in high total ionizing dose and particle fluence environments. Our radiation hard multi-channel digitizer (MCD) ASIC (Figure 1) is a versatile analog system on a chip (SoC) fabricated in 180nm CMOS. It provides 18 chopper stabilized amplifier channels, a 16- bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The MCD was evaluated at Goddard Space Flight Center and Texas A&M University's radiation effects facilities and found to be immune to single event latchup (SEL) and total ionizing dose (TID) at 174 MeV-cm(exp 2)/mg and 50 Mrad (Si) respectively.

radiation hardened by design↗