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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗
NASA NTRS1989

Infrared ground-based astronomy with the Hughes 256 X 256 PtSi array

It is shown that large format PtSi Schottky diode infrared arrays, the Hughes 256 X 256 hybrid Schottky array in particular, are competitive alternatives to the smaller format photovoltaic arrays for ground-based astronomy. The modest quantum efficiency of the PtSi compared to the photovoltaic devices is more than compensated for by the larger format. The use of hybrid technology yields effective fill factors of nearly 100 percent, and the low dark current, noise, excellent imaging characteristics, cost, and solid nitrogen operating temperature add to the effectiveness of this array for ground-based imaging. In addition to discussing the characteristics of this array, researchers present laboratory test data and astronomical results achieved at Kitt Peak.

Fowler, A.↗
NASA NTRS1989

Short wavelength HgCdTe staring focal plane for low background astronomy applications

The design of a 128x128 staring short wave infrared (SWIR) HgCdTe focal plane incorporating charge integrating transimpedance input preamplifiers is presented. The preamplifiers improve device linearity and uniformity, and provide signal gain ahead of the miltiplexer and readout circuitry. Detector's with cutoff wavelength of 2.5 microns and operated at 80 K have demonstrated impedances in excess of 10(exp 16) ohms with 60 percent quantum efficiency. Focal plane performance using a smaller format device is presented which demonstrates the potential of this approach. Although the design is capable of achieving less than 30 rms electrons with todays technology, initial small format devices demonstrated a read noise of 100 rms electrons and were limited by the atypical high noise performance of the silicon process run. Luminescence from the active silicon circuitry in the multiplexer limits the minimum detector current to a few hundred electrons per second. Approaches to eliminate this excessive source of current is presented which should allow the focal plane to achieve detector background limited performance.

Hall, D.↗
NASA NTRS1989

Low noise HgCdTe 128 x 128 SWIR FPA for Hubble space telescope

Large area focal plane arrays of unprecedented performance were developed for use in Near Infrared Camera and Multi-Object Spectrometer (NICMOS), a proposed Hubble Space Telescope refurbishment instrument. These FPAs are 128x128-element, HgCdTe hybrid arrays with a cutoff wavelength of 2.5 microns. The multiplexer consists of a CMOS field effect transistor switch array with a typical mean readout noise of less than 30 electrons. The detectors typically have a mean dark current of less than 10 electrons/s at 77 K, with currents below 2 electrons measured at 60 K (both at 0.5 V reverse bias). The mean quantum efficiency is 40 to 60 percent at 77 K for 1.0 to 2.4 microns. Functional pixel yield is typically greater than 99 percent, and the power consumption is approximately 0.2 mW (during readout only).

Blessinger, Michael↗
NASA NTRS1989

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗
NASA NTRS1988

Responsivity of silicon photodiodes from 0.5 to 1.1 micron at 77 K

The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR Mapping Spectrometer (VIMS). Quantitative responsivity data for Si photodiodes in the band from 0.5 to 1.1 were needed for the VIMS system analysis. The results show that the Si array for the focal plane should have two different antireflection coatings. It is found that the Si and InSb materials have equivalent quantum efficiencies at about 0.9 microns. Because of unknown signal chain complications that could be caused by a multiplexer accessing two different capacitances, the focal plane was designed with a change from Si to InSb at 1 micron.

Staller, C.↗
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1990

Sounding rocket measurement of the absolute solar EUV flux utilizing a silicon photodiode

A newly developed stable and high quantum efficiency silicon photodiode was used to obtain an accurate measurement of the integrated absolute magnitude of the solar extreme UV photon flux in the spectral region between 50 and 800 A. The adjusted daily 10.7-cm solar radio flux and sunspot number were 168.4 and 121, respectively. The unattenuated absolute value of the solar EUV flux at 1 AU in the specified wavelength region was 6.81 x 10 to the 10th photons/sq cm per s. Based on a nominal probable error of 7 percent for National Institute of Standards and Technology detector efficiency measurements in the 50- to 500-A region (5 percent on longer wavelength measurements between 500 and 1216 A), and based on experimental errors associated with the present rocket instrumentation and analysis, a conservative total error estimate of about 14 percent is assigned to the absolute integral solar flux obtained.

Ogawa, H. S.↗
NASA NTRS1989

Radiance calibration of spherical integrators

Techniques for improving the knowledge of the radiance of large area spherical and hemispherical integrating energy sources have been investigated. Such sources are used to calibrate numerous aircraft and spacecraft remote sensing instruments. Comparisons are made between using a standard source based calibration method and a quantum efficient detector (QED) based calibration method. The uncertainty involved in transferring the calibrated values of the point source standard lamp to the extended source is estimated to be 5 to 10 percent. The use of the QED allows an improvement in the uncertainty to 1 to 2 percent for the measurement of absolute radiance from a spherical integrator source.

Mclean, James T.↗
NASA NTRS1990

High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nm

Ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers exhibiting record high quantum efficiencies and high output power densities (105 mW per facet from a 6 micron wide stripe) at a lasing wavelength of 980 nm are discussed that were fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. Life testing at an output power of 30 mW per uncoated facet reveals a slow gradual degradation during the initial 500 h of operation after which the operating characteristics of the lasers become stable. The emission wavelength, the high output power, and the fundamental lateral mode operation render these lasers suitable for pumping Er3+-doped fiber amplifiers.

Larsson, A.↗
NASA NTRS1989

MAMA detector systems - A status report

Third-generation, 224 x 960 and 360 x 1024-pixel multianode microchannel (MAMA) detectors are under development for satellite-borne FUV and EUV observations, using pixel dimensions of 25 x 25 microns. An account is presently given of the configurations, modes of operation, and recent performance data of these systems. At UV and visible wavelengths, these MAMAs employ a semitransparent, proximity-focused photocathode structure. At FUV and EUV wavelengths below about 1500 A, opaque alkali-halide photocathodes deposited directly on the front surface of the MCP furnish the best detective quantum efficiencies.

Timothy, J. Gethyn↗
NASA NTRS1989

Low temperature multi-alkali photocathode processing technique for sealed intensified CCD tubes

A low temperature photocathode process has been used to fabricate an intensified CCD visual photocathode image tube, by incorporating a thinned, backside-illumined CCD as the target anode of a digicon tube of Hubble Space Telescope (HST) design. The CCD digicon tube employs the HST's sodium bialkali photocathode and MgF2 substrate, thereby allowing a direct photocathode quantum efficiency comparison between photocathodes produced by the presently employed low temperature process and those of the conventional high temperature process. Attention is given to the processing chamber used, as well as the details of gas desorption and photocathode processing.

Doliber, D. L.↗
NASA NTRS1989

Room-temperature InGaAs detector arrays for 2.5 microns

This paper describes new alloy heterojunction detectors of In(.8)Ga(.2)As/InAs(.6)P(.4) which can detect light between 1.7 and 2.6 microns with 50 percent quantum efficiency and 5 mA/sq cm dark current (-1 V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 micron diameter devices (spaced 400 microns) could be made on a 25 x 30 mm wafer with overall yield above 93 percent. The ability to operate under -1 V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.

Olsen, G. H.↗
NASA NTRS1989

Hybrid gas scintillation proportional counter/phoswich detector for hard X-ray astronomy

A concept is presented for a balloon-borne imaging hybrid proportional counter/phoswich detector of medium to hard X-rays. The phoswich would be optically coupled to the exit window of the proportional counter, and both detectors would use a common position-sensitive readout. It is anticipated that such a detector could combine the good energy and position resolution and excellent background rejection ability of the proportional counter for incident photon energies less than 100 keV with the extended response of the phoswich for higher energies. The phoswich could also be used to reject Compton scattering events in the proportional counter. This detector concept is studied using numerical simulations of a 400 sq cm square prototype detector. Results from this simulation indicate that current levels of proportional counter and phoswich performance are attainable at small cost in quantum efficiency, compared to a bare phoswich detector.

Grindlay, Jonathan E.↗
NASA NTRS1989

X-ray calibration of a virtual phase 1024 x 1024 CCD

Results are presented on a calibration with X-rays of a front-illuminated virtual phase CCD with a 1024 x 1024 pixel array, performed as a part of the Solar-A preparation, which is a joint Japanese-U.S.-UK space project scheduled for a launch in August 1991. In the experiment, absolute quantum efficiency (QE) of a virtual CCD was measured at 14 wavelengths between 5.4 and 67.7 A, and its flat field responses to the illumination by C-K and Al-K X-rays were investigated together with its imaging properties in visible light. Higher than expected QE measurements were obtained at soft X-ray and EUV wavelengths; these are considered to be caused by fluorescence occurring in the absorbing layers on the CCD-entrance aperture.

Catura, R. C.↗
NASA NTRS1990

Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Infrared radiation at wavelengths of 1-2 microns has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10-50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3 percent is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5-nm silicide thickness.

Fathauer, R. W.↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors

The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.

Lin, T. L.↗
NASA NTRS1991

Heterojunction-Internal-Photoemission Infrared Detectors

New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.

Maserjian, Joseph↗