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At least 379 records · Page 21

Toward 1% single-photon anharmonicity with periodically poled lithium niobate microring resonators

The absence of the single-photon nonlinearity has been a major roadblock in developing quantum photonic circuits at optical frequencies. In this paper, we demonstrate a periodically poled thin film lithium niobate microring resonator (PPLNMR) that reaches 5,000,000%/W second-harmonic conversion efficiency—almost 20-fold enhancement over the state-of-the-art—by accessing its largest χ <#comment/> ( 2 ) tensor component d 33 via quasi-phase matching. The corresponding single-photon coupling rate g / 2 π <#comment/> is estimated to be 1.2 MHz, which is an important milestone as it approaches the dissipation rate κ <#comment/> / 2 π <#comment/> of best-available lithium niobate microresonators developed in the community. Using a figure of merit defined as g / κ <#comment/> , our device reaches a single-photon nonlinear anharmonicity approaching 1%. We show that, by further scaling of the device, it is possible to improve the single-photon anharmonicity to a regime where photon blockade effect can be manifested.

Lu, Juanjuan (ORCID:0000000319389119)↗

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗

Wavelength conversion through plasmon-coupled surface states

Surface states generally degrade semiconductor device performance by raising the charge injection barrier height, introducing localized trap states, inducing surface leakage current, and altering the electric potential. We show that the giant built-in electric field created by the surface states can be harnessed to enable passive wavelength conversion without utilizing any nonlinear optical phenomena. Photo-excited surface plasmons are coupled to the surface states to generate an electron gas, which is routed to a nanoantenna array through the giant electric field created by the surface states. The induced current on the nanoantennas, which contains mixing product of different optical frequency components, generates radiation at the beat frequencies of the incident photons. We utilize the functionalities of plasmon-coupled surface states to demonstrate passive wavelength conversion of nanojoule optical pulses at a 1550 nm center wavelength to terahertz regime with efficiencies that exceed nonlinear optical methods by 4-orders of magnitude.

42 ENGINEERING↗

Enantioselective Se lattices for stable chiroptoelectronic processing media

Chiroptoelectronic devices are crucial for applications in quantum computing, spin optical communications, and magnetic recording. However, the limited efficiency and low stability of conventional circularly polarized light (CPL)-sensing materials have restricted their broader use. Here, we introduce atomic chiral Se nanorod (NRs) films as broadband CPL detectors, leveraging the intrinsic chirality and stability of Se nanocrystals. We also perform incident circular polarization (ICP)-Raman optical activity (ROA) to explore the chiroptical activity of the large-area films. The Se NRs thin films detected CPL across a broad range from ultraviolet (UV) to short-wavelength infrared (SWIR), with a responsivity dissymmetry factor of up to 0.4, maintaining high stability under ambient conditions for longer than 13 months. CPL-sensitive Se NRs with intrinsic chirality have potential applications in chiral photonic synapses, chiral spin devices, and CPL-sensitive photocatalysts. ICP-ROA mapping also advances the analysis of 2D chiral materials.

Nanophotonics and plasmonics↗

A Fabrication Strategy for Reconfigurable Millimeter–Scale Metamaterials

Rather than depending on material composition to primarily dictate performance metrics, metamaterials can leverage geometry to achieve specific properties of interest. For example, reconfigurable metamaterials have enabled programmable shape transformations, tunable mechanical properties, and energy absorption. While several methods exist to fabricate such structures, they often place severe restrictions on manufacturing materials, or require significant manual assembly. Moreover, these arrays are typically composed of unit cells that are either macro–scale or micro–scale in dimension. Here, the fabrication gap is bridged, and laminate manufacturing is used to develop a method for designing reconfigurable metamaterials at the millimeter–scale, that is compatible with a wide range of materials, and that requires minimal manual assembly. In addition to showing the versatility of this fabrication method, how the use of laminate manufacturing affects the behavior of these multi–component arrays is also characterized. To this end, a numerical model that captures the deformations exhibited by the structures is developed, and an analytic model that predicts the strain of the structure under compressive stress is built. Overall, this approach can be leveraged to develop millimeter–scale metamaterials for applications that require reconfigurable materials, such as in the design of tunable acoustics, photonic waveguides, and electromagnetic devices.

36 MATERIALS SCIENCE↗

Highly efficient photoelectric effect in halide perovskites for regenerative electron sources

Electron sources are a critical component in a wide range of applications such as electron-beam accelerator facilities, photomultipliers, and image intensifiers for night vision. We report efficient, regenerative and low-cost electron sources based on solution-processed halide perovskites thin films when they are excited with light with energy equal to or above their bandgap. We measure a quantum efficiency up to 2.2% and a lifetime of more than 25 h. Importantly, even after degradation, the electron emission can be completely regenerated to its maximum efficiency by deposition of a monolayer of Cs. The electron emission from halide perovskites can be tuned over the visible and ultraviolet spectrum, and operates at vacuum levels with pressures at least two-orders higher than in state-of-the-art semiconductor electron sources.

36 MATERIALS SCIENCE↗

Demonstration of resonant tunneling effects in metal-double-insulator-metal (MI2M) diodes

Abstract Although the effect of resonant tunneling in metal-double-insulator-metal (MI 2 M) diodes has been predicted for over two decades, no experimental demonstrations have been reported at the low voltages needed for energy harvesting rectenna applications. Using quantum-well engineering, we demonstrate the effects of resonant tunneling in a Ni/NiO/Al 2 O 3 /Cr/Au MI 2 M structures and achieve the usually mutually exclusive desired characteristics of low resistance ( $${R}_{0}^{DC} \sim$$ R 0 D C ~ 13 kΩ for 0.035 μm 2 ) and high responsivity ( β 0 = 0.5 A W −1 ) simultaneously. By varying the thickness of insulators to modify the depth and width of the MI 2 M quantum well, we show that resonant quasi-bound states can be reached at near zero-bias, where diodes self-bias when driven by antennas illuminated at 30 THz. We present an improvement in energy conversion efficiency by more than a factor of 100 over the current state-of-the-art, offering the possibility of engineering efficient energy harvesting rectennas.

42 ENGINEERING↗

Diamine chelates for increased stability in mixed Sn–Pb and all-perovskite tandem solar cells

Perovskite tandem solar cells show promising performance but non-radiative recombination and its progressive worsening with time, especially in the mixed Sn–Pb low-bandgap layer, limit performance and stability. Here, in this study, we find that mixed Sn–Pb perovskite thin films exhibit a compositional gradient, with an excess of Sn on the surface – and we show this gradient exacerbates oxidation and increases the recombination rate. We find that diamines preferentially chelate Sn atoms, removing them from the film surface and achieving a more balanced Sn:Pb stoichiometry, making the surface of the film resistive to the oxidation of Sn. The process forms an electrically resistive low-dimensional barrier layer, passivating defects and reducing interface recombination. Further improving the homogeneity of the barrier layer using 1,2-diaminopropane results in more uniform distribution and passivation. Tandems achieve a power conversion efficiency of 28.8%. As a result, encapsulated tandems retain 90% of initial efficiency following 1000 hours of operating at the maximum power point under simulated one-sun illumination in air without cooling.

14 SOLAR ENERGY↗

Integrated optical frequency division for microwave and mmWave generation

Abstract The generation of ultra-low-noise microwave and mmWave in miniaturized, chip-based platforms can transform communication, radar and sensing systems 1–3 . Optical frequency division that leverages optical references and optical frequency combs has emerged as a powerful technique to generate microwaves with superior spectral purity than any other approaches 4–7 . Here we demonstrate a miniaturized optical frequency division system that can potentially transfer the approach to a complementary metal-oxide-semiconductor-compatible integrated photonic platform. Phase stability is provided by a large mode volume, planar-waveguide-based optical reference coil cavity 8,9 and is divided down from optical to mmWave frequency by using soliton microcombs generated in a waveguide-coupled microresonator 10–12 . Besides achieving record-low phase noise for integrated photonic mmWave oscillators, these devices can be heterogeneously integrated with semiconductor lasers, amplifiers and photodiodes, holding the potential of large-volume, low-cost manufacturing for fundamental and mass-market applications 13 .

Science & Technology - Other Topics↗

Intricate short-range order in GeSn alloys revealed by atomistic simulations with highly accurate and efficient machine-learning potentials

GeSn alloys hold promise for silicon-compatible integrated applications in electronics, photonics, and topological quantum devices. However, understanding their intricate structures using density functional theory (DFT) calculations is hindered by spatiotemporal constraints. To overcome this limitation, we develop highly accurate and efficient machine-learning interatomic potentials based on a neuroevolution potential approach with farthest point sampling on a comprehensive DFT data set. The application of the developed machine-learning potential in large-scale atomistic simulations bridges the spatiotemporal gap between modeling and advanced characterizations, and facilitates the discovery of structural intricacies in GeSn alloys. Through extensive statistical sampling, we identify a type of short-range order (SRO) that is distinguished by both its structural signature and electronic band gap from the SRO structure previously predicted. Modeling based on a large simulation cell reveals the coexistence of nano SRO domains with various degrees of ordering, demonstrating a complex spatial heterogeneity of SRO structure. Finally, our study not only reinforces the significance of fine-level structural information in alloys, but it also constitutes an effective framework for exploring SRO in a broad range of complex alloys based on highly accurate and effective machine-learning potentials.

36 MATERIALS SCIENCE↗

Beamline Spectroscopy of Integrated Circuits With Hard X-Ray Transition Edge Sensors at the Advanced Photon Source

At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. Additionally, a prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Pulsed radio frequency power modulation for profile control in cryogenic reactive ion etching of silicon gratings

Cryogenic silicon etching with SF 6 /O 2 plasmas enables vertical sidewalls and smooth surfaces for high–aspect-ratio structures, yet precise control of etched profiles (sidewall angle, lateral etching, and linewidth retention) remains challenging under continuous-wave excitation due to coupling among radical fluxes, ion energy distributions, and in situ passivation dynamics. In this work, we investigated pulsed radio frequency bias delivery as a process knob for profile control during cryogenic silicon etching. Systematic experiments on 500 nm-wide, 1 μm-pitch gratings etched to 0.8–1.1 μm depth at 0.5–2 kHz pulsing frequency and 25%–75% duty cycle revealed strong dependencies of etch rate, linewidth, and sidewall angle on modulation conditions. We proposed a conceptual kinetic picture combined with feature-scale electrostatic analysis to understand the alternation of ion-driven etching and passivation recovery between on/off segments and local electric field shaping and modulation of ion trajectories within the trench. Moderate duty cycles (50%–75%) near 1 kHz achieved a balance between anisotropy and etch rate. These results demonstrate pulsed-bias modulation can be utilized to tune directionality and sidewall preservation in cryogenic SF 6 /O 2 etching, which are relevant to photonic, metrology, and quantum device fabrication.

36 MATERIALS SCIENCE↗

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of − <#comment/> 150 d B / H z . The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Duan, Jianan (ORCID:0000000177104287)↗

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

Efron, Uzi↗

Wavelength-multiplexed fiber-optic position encoder for aircraft control systems

NASA-Lewis has developed wavelength-multiplexed digital position fiber-optics transducers for use in aircraft control systems. A prototype LED-powered rotary encoder for a commercial aircraft turbofan engine is under construction which will have 8-bit resolution and an operational temperature in the 90 C range. A compact electrooptics module is also under development which will be able to withstand gas turbine environments. A second-generation device will incorporate integrated photonics technologies to increase optical power margin.

Beheim, Glenn↗

Electronic Still Camera

A handheld, programmable, digital camera is disclosed that supports a variety of sensors and has program control over the system components to provide versatility. The camera uses a high performance design which produces near film quality images from an electronic system. The optical system of the camera incorporates a conventional camera body that was slightly modified, thus permitting the use of conventional camera accessories, such as telephoto lenses, wide-angle lenses, auto-focusing circuitry, auto-exposure circuitry, flash units, and the like. An image sensor, such as a charge coupled device ('CCD') collects the photons that pass through the camera aperture when the shutter is opened, and produces an analog electrical signal indicative of the image. The analog image signal is read out of the CCD and is processed by preamplifier circuitry, a correlated double sampler, and a sample and hold circuit before it is converted to a digital signal. The analog-to-digital converter has an accuracy of eight bits to insure accuracy during the conversion. Two types of data ports are included for two different data transfer needs. One data port comprises a general purpose industrial standard port and the other a high speed/high performance application specific port. The system uses removable hard disks as its permanent storage media. The hard disk receives the digital image signal from the memory buffer and correlates the image signal with other sensed parameters, such as longitudinal or other information. When the storage capacity of the hard disk has been filled, the disk can be replaced with a new disk.

Holland, S. Douglas↗

Optical Breath Gas Sensor for Extravehicular Activity Application

The function of the infrared gas transducer used during extravehicular activity (EVA) in the current space suit is to measure and report the concentration of carbon dioxide (CO2) in the ventilation loop. The next generation Portable Life Support System (PLSS) requires next generation CO2 sensing technology with performance beyond that presently in use on the Shuttle/International Space Station extravehicular mobility unit (EMU). Accommodation within space suits demands that optical sensors meet stringent size, weight, and power requirements. A laser diode (LD) spectrometer based on wavelength modulation spectroscopy (WMS) is being developed for this purpose by Vista Photonics, Inc. Two prototype devices were delivered to NASA Johnson Space Center (JSC) in September 2011. The sensors incorporate a laser diode based CO2 channel that also includes an incidental water vapor (humidity) measurement and a separate oxygen (O2) channel using a vertical cavity surface emitting laser (VCSEL). Both prototypes are controlled digitally with a field-programmable gate array (FPGA)/microcontroller architecture. Based on the results of the initial instrument development, further prototype development and testing of instruments leveraging the lessons learned were desired. The present development extends and upgrades the earlier hardware to the Advanced PLSS 2.0 test article being constructed and tested at JSC. Various improvements to the electronics and gas sampling are being advanced by this project. The combination of low power electronics with the performance of a long wavelength laser spectrometer enables multi-gas sensors with significantly increased performance over that presently offered in the EMU. .

Wood, William R.↗