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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

A high sensitivity fiber optic macro-bend based gas flow rate transducer for low flow rates: Theory, working principle, and static calibration

A novel fiber optic macro-bend based gas flowmeter for low flow rates is presented. Theoretical analysis of the sensor working principle, design, and static calibration were performed. The measuring system consists of: an optical fiber, a light emitting diode (LED), a Quadrant position sensitive Detector (QD), and an analog electronic circuit for signal processing. The fiber tip undergoes a deflection in the flow, acting like a cantilever. The consequent displacement of light spot center is monitored by the QD generating four unbalanced photocurrents which are function of fiber tip position. The analog electronic circuit processes the photocurrents providing voltage signal proportional to light spot position. A circular target was placed on the fiber in order to increase the sensing surface. Sensor, tested in the measurement range up to 10 l min{sup -1}, shows a discrimination threshold of 2 l min{sup -1}, extremely low fluid dynamic resistance (0.17 Pa min l{sup -1}), and high sensitivity, also at low flow rates (i.e., 33 mV min l{sup -1} up to 4 l min{sup -1} and 98 mV min l{sup -1} from 4 l min{sup -1} up to 10 l min{sup -1}). Experimental results agree with the theoretical predictions. The high sensitivity, along with the reduced dimension and negligible pressure drop, makes the proposed transducer suitable for medical applications in neonatal ventilation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Ratchet effects in graphene and quantum wells with lateral superlattice

Theoretical and experimental studies on the ratchet effects in graphene and in quantum wells with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. We discuss the Seebeck ratchet effect and helicity driven photocurrents and show that the photocurrent generation is based on the combined action of a spatially periodic in-plane potential and a spatially modulated light.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A low-noise transimpedance amplifier for the detection of “Violin-Mode” resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level “Violin-Mode” (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent “noise-gain peaking” arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes’ two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m{sup −1}(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Synthesized multiwall MoS{sub 2} nanotube and nanoribbon field-effect transistors

We report on the fabrication and characterization of synthesized multiwall MoS{sub 2} nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS{sub 2} NTs and NRs were grown by chemical transport, using iodine as a transport agent. Raman spectroscopy confirms the material as unambiguously MoS{sub 2} in NT, NR, and flake forms. Transmission electron microscopy was used to observe cross sections of the devices after electrical measurements and these were used in the interpretation of the electrical measurements, allowing the estimation of the current density. The NT and NR FETs demonstrate n-type behavior, with ON/OFF current ratios exceeding 10{sup 3}, and with current densities of 1.02 μA/μm and 0.79 μA/μm at V{sub DS} = 0.3 V and V{sub BG} = 1 V, respectively. Photocurrent measurements conducted on a MoS{sub 2} NT FET revealed short-circuit photocurrent of tens of nanoamps under an excitation optical power of 78 μW and 488 nm wavelength, which corresponds to a responsivity of 460 μA/W. A long channel transistor model was used to model the common-source characteristics of MoS{sub 2} NT and NR FETs and was shown to be consistent with the measured data.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Photoconductive properties of Bi{sub 2}S{sub 3} nanowires

The photoconductive properties of Bi{sub 2}S{sub 3} nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm{sup −2}. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi{sub 2}S{sub 3} nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi{sub 2}S{sub 3} nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi{sub 2}S{sub 3} nanowires, when compared to liberated from the AAO membrane individual Bi{sub 2}S{sub 3} nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electrosprayed heterojunction WO{sub 3}/BiVO{sub 4} films with nanotextured pillar structure for enhanced photoelectrochemical water splitting

We demonstrate that the addition of a tungsten oxide (WO{sub 3}) layer beneath a bismuth vanadate (BiVO{sub 4}) photocatalyst layer with a nanotextured pillar morphology significantly increases the photocurrent density in photoelectrochemical water splitting. The WO{sub 3}-BiVO{sub 4} bilayer films produced a photocurrent of up to 3.3 mA/cm{sup 2} under illumination at 100 mW/cm{sup 2} (AM1.5 spectrum). The bilayer film was characterized by scanning electron microscopy, X-ray diffraction, and photoelectrochemical methods, which confirmed the superiority of the bilayer film in terms of its morphology and charge separation and transport ability. Both WO{sub 3} and BiVO{sub 4} were deposited by electrostatic spraying under open-air conditions, which resulted in nanotextured pillars of BiVO{sub 4} atop a smooth WO{sub 3} film. The optimal coating conditions are also reported.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Quantum confinement of excitons in wurtzite InP nanowires

Exciton resonances are observed in photocurrent spectra of 80 nm wurtzite InP nanowire devices at low temperatures, which correspond to transitions between the A, B, and C valence bands and the lower conduction band. Photocurrent spectra for 30 nm WZ nanowires exhibit shifts of the exciton resonances to higher energy, which are consistent with finite element calculations of wavefunctions of the confined electrons and holes for the various bands.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Plasmon-induced charge separation at two-dimensional gold semishell arrays on SiO{sub 2}@TiO{sub 2} colloidal crystals

Photoelectrodes based on plasmonic Au semishell (or halfshell) arrays are developed. A colloidal crystal consisting of SiO{sub 2}@TiO{sub 2} core-shell particles is prepared on a TiO{sub 2}-coated transparent electrode. A Au semishell (or halfshell) array is deposited by sputtering or evaporation on the colloidal crystal. An electrode with the semishell (or halfshell) array exhibits negative photopotential shifts and anodic photocurrents under visible light at 500-800 nm wavelengths in an aqueous electrolyte containing an electron donor. In particular, hydroquinone and ethanol are good electron donors. The photocurrents can be explained in terms of plasmon-induced charge separation at the Au-TiO{sub 2} interface.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhancing the accuracy of the Fowler method for monitoring non-constant work functions

The Fowler method is a prominent non-invasive technique to determine the absolute work function of a surface based on the photoelectric effect. The evaluation procedure relies on the correlation of the photocurrent with the incident photon energy hν which is mainly dependent on the surface work function χ. Applying Fowler’s theory of the photocurrent, the measurements can be fitted by the theoretical curve near the threshold hν⪆χ yielding the work function χ and a parameter A. The straightforward experimental implementation of the Fowler method is to use several particular photon energies, e.g. via interference filters. However, with a realization like that the restriction hν ≈ χ can easily be violated, especially when the work function of the material is decreasing during the measurements as, for instance, with coating or adsorption processes. This can lead to an overestimation of the evaluated work function value of typically some 0.1 eV, reaching up to more than 0.5 eV in an unfavorable case. A detailed analysis of the Fowler theory now reveals the background of that effect and shows that the fit-parameter A can be used to assess the accuracy of the determined value of χ conveniently during the measurements. Moreover, a scheme is introduced to quantify a potential overestimation and to perform a correction to χ to a certain extent. The issues are demonstrated exemplarily at the monitoring of the work function reduction of a stainless steel sample surface due to caesiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

BiVO{sub 4} photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

Photoactive bismuth vanadate (BiVO{sub 4}) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO{sub 4} films were investigated. Phase-pure monoclinic BiVO{sub 4} films, which are more photoactive than the tetragonal BiVO{sub 4} phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO{sub 4} films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO{sub 4} film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm{sup 2} at a potential of 1.23 V{sub RHE} under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO{sub 4} films opens new possibilities for the fabrication of large-scale devices for water splitting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Trap-assisted large gain in Cu{sub 2}O/C{sub 60} hybrid ultraviolet/visible photodetectors

Photomultiplication-type ultraviolet (UV)/visible photodetectors (PDs) are demonstrated in an electrodeposited Cu{sub 2}O/C{sub 60} hybrid structure. These simple organic/inorganic hybrid PDs exhibit external quantum efficiencies (EQEs) of 1.1 × 10{sup 4}% under illumination of 365 nm UV light at −3 V, indicating a large gain of photocurrent for these devices. Such an EQE is one of the highest values among the reported organic/inorganic hybrid PDs at the same voltage. Cu{sub 2}O and C{sub 60} are found to play different roles in realizing the photomultiplication. Copper vacancies are proposed as the defects in the electrodeposited Cu{sub 2}O layers, which can trap photogenerated holes. Such trapped holes will trigger the injection of multiple electrons and hence result in the photocurrent gain of the devices while C{sub 60} primarily acts as a light absorption media to provide free holes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Kinetics of photo-activated charge carriers in Sn:CdS

Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd{sub 1-x}Sn{sub x}S (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ{sub 1}, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation intensity is found to be nonlinear and varying with excitation energy. The structures are photosensitive in a wide range of photon energies above 0.6 eV. The spectral dependence of the photoconductivity (PC) is caused by strong interaction between the bulk GaAs and the lower energy states of the wetting layer, the QDs, as well as the defect states in the GaAs band gap. In particular, a mechanism for the participation of deep electron trap levels in the photocurrent is clarified. These structures also demonstrate a high sensitivity of up to 10 A/W at low excitation intensities. However, at higher excitation intensities, the sensitivity reduces exhibiting a strong spectral dependence at the same time. The observed sublinear PC dependence on excitation power results from a direct electron-hole recombination both in the QDs and in GaAs host. The solution of rate equations included the contributions of QD ground and exited states, bulk GaAs states and the states of defects within the GaAs bandgap describes well the experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs

We investigate the optical transitions of GaN{sub x}As{sub 1−x} quantum wells (QWs) embedded in wider band gap AlGaAs. A combination of absorption and emission spectroscopic techniques is employed to systematically investigate the properties of GaNAs QWs with N concentrations ranging from 0 – 3%. From measurement of the photocurrent spectra, we find that besides QW ground state and first excited transition, distinct increases in photocurrent generation are observed. Their origin can be explained by N-induced modifications in the density of states at higher energies above the QW ground state. Photoluminescence experiments reveal that peak position dependence with temperature changes with N concentration. The characteristic S-shaped dependence for low N concentrations of 0.5% changes with increasing N concentration where the low temperature red-shift of the S-shape gradually disappears. This change indicates a gradual transition from impurity picture, where localized N induced energy states are present, to alloying picture, where an impurity-band is formed. In the highest-N sample, photoluminescence emission shows remarkable temperature stability. This phenomenon is explained by the interplay of N-induced energy states and QW confined states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but also enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition

Photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD), a process in which photoelectrons emitted from a substrate irradiated with ultraviolet light are utilized as a trigger for DC discharge, was investigated in this study; specifically, the DC discharge characteristics of PA-PECVD were examined for an Si substrate deposited in advance through hot-filament chemical vapor deposition with a nitrogen-doped diamond layer of thickness ∼1 μm. Using a commercially available Xe excimer lamp (hν = 7.2 eV) to illuminate the diamond surface with and without hydrogen termination, the photocurrents were found to be 3.17 × 10{sup 12} and 2.11 × 10{sup 11} electrons/cm{sup 2}/s, respectively. The 15-fold increase in photocurrent was ascribed to negative electron affinity (NEA) caused by hydrogen termination on the diamond surfaces. The DC discharge characteristics revealed that a transition bias voltage from a Townsend-to-glow discharge was considerably decreased because of NEA (from 490 to 373 V for H{sub 2} gas and from 330 to 200 V for Ar gas), enabling a reduction in electric power consumption needed to synthesize diamond films through PA-PECVD. In fact, the authors have succeeded in growing high-quality diamond films of area 2.0 cm{sup 2} at 540 °C with a discharge power of only 1.8 W, plasma voltage of 156.4 V, and discharge current of 11.7 mA under the glow discharge of CH{sub 4}/H{sub 2}/Ar mixed gases. In addition to having only negligible amounts of graphite and amorphous carbon, the diamond films exhibit a relatively high diamond growth rate of 0.5 μm/h at temperatures as low as 540 °C, which is attributed to Ar{sup +} ions impinging on the diamond surface, and causing the removal of hydrogen atoms from the surface through sputtering. This process leads to enhanced CH{sub x} radical adsorption, because the sample was applied with a negative potential to accelerate photoelectrons in PA-PECVD.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗