Longevity Demonstration of Methane to C2 via a Nonthermal Plasma Microreactor
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A linear-field plasma jet composed of line-to-plate electrodes is used to generate a large-scale brush-shaped plasma plume with flowing argon used as working gas. Through electrical measurement and fast photography, it is found that the plasma plume bridges the two electrodes for the discharge in the positive voltage half-cycle, which behaves like fast moving plasma bullets directed from the anode to the cathode. Compared with the positive discharge, the negative discharge only develops inside the nozzle and propagates much slower. Results also indicate that the gas temperature of the plume is close to room temperature, which is promising for biomedical application.
In room-temperature atmospheric air, the large-scale diffuse plasmas can be generated via high-voltage nanosecond pulses with short rise-time and wire electrodes. Diffuse discharge with the wire electrode length up to 110.0 cm and the discharge spacing of several centimeters has been investigated in this paper. Electrical characteristics of diffuse discharge have been analyzed by their optical photographs and measuring of the voltage and current waveforms. Experimental results show the electrode spacing, and the length of wire electrodes can influence the intensity and mode transition of diffuse discharge. The characteristic of current waveforms is that there are several current oscillation peaks at the time of applied pulsed voltage peak, and at the tail of applied pulse, the conduction current component will compensate the displacement one so that the measured current is unidirectional in diffuse discharge mode. The transition from diffuse discharge to arc discharge is always with the increasing of conduction current density. As for nanosecond pulses with long tail, the long wire electrodes are help for generating non-equilibrium diffuse plasmas.
We solve in closed form the boundary-value problem for the partial differential equations which describe the (azimuthal) rotation velocity and induced magnetic fields in a cylindrical plasma centrifuge with ring electrodes of different radii and an external, axial magnetic field. The electric field, current density, and velocity distributions are discussed in terms of the Hartmann number H and the magnetic Reynolds number R. For small Hall coefficients, the induced magnetic field does not affect the plasma rotation. As a result of the Lorentz forces, the plasma rotates with speeds as high as 100,000 cm/sec around its axis of symmetry at typical conditions, so that the lighter (heavier) ion and atom components are enriched at (off) the center of the discharge cylinder.
A barrier electric discharge excited between a fixed electrode and a rotating electrode covered with a dielectric layer in atmospheric-pressure air is studied experimentally. A distinctive feature of this type of discharge is that it operates at a constant voltage between the electrodes. An advantage of the proposed method for plasma generation in the boundary layer of the rotating electrode (e.g., for studying the influence of plasma on air flows) is the variety of forms of the discharge and conditions for its initiation, simplicity of the design of the discharge system, and ease of its practical implementation.
Treatment of nanoparticles (NPs) in complex environments, such as plasmas, is of interest for the fabrication of advanced nanomaterials with desired properties and also from a physical point of view. Here, the authors investigate the mutual interaction between silver NPs and a radio frequency (RF) plasma at different conditions by combining a cylindrical hollow electrode with a gas aggregation source. The investigation of the NP deposits and the morphology of the casted films shows that the applied RF discharge significantly changes the path of the NPs as well as the NP size distribution in the beam. Starting from a neutral NP beam, it is observed that most of the NPs leave the plasma region with negative charge(s), yet the fraction of positively charged NPs grows with power. Furthermore, the plasma characteristics are slightly influenced by the NP flux since the passing NPs collect the plasma charge carriers.
Experimental investigation of the low-temperature plasma of a gas discharge initiated in an interelectrode gap where one electrode is a liquid jet cathode and the other is a metallic anode has been carried out. Data are presented for the physical and spectral characteristics of the discharge and plasma composition. The electron concentration and temperature, as well as the vibrational and rotational temperatures of the heavy component have been estimated. The form and type of the discharge and also gas-hydrodynamic and thermal processes at the interface are described.
The strong radial electric field associated with the Penning discharge and the strong toroidal magnetic field give rise to a diversity of E/B phenomena, such as rotating waves and spokes, which in turn manifest themselves as space-time fluctuations of the plasma density and potential. Work is done to further understand the nature and origin of the fluctuations and their connection with fluctuation-induced transport. The approach is to monitor the density and potential fluctuations; to digitize the data; and to generate, with the aid of a computer, various spectral properties by means of the fast fourier transform. Of particular interest is the computer-generated transport spectrum that indicates in a quantitative way which fluctuation spectral components contribute to transport and which do not. All experimental measurements of the spectral characteristics of the plasma are given in absolute units rather than as relative values. Preliminary measurements of the transport spectrum of the ion population are given, and it is shown that the fluctuation-induced transport is in order-of-magnitude agreement with that inferred from the steady state current flowing to the electrodes that generate the plasma.
Conductivity of insulating materials is a key parameter to determine how accumulated charge will distribute across the spacecraft and how rapidly charge imbalance will dissipate. Classical ASTM and IEC methods to measure thin film insulator conductivity apply a constant voltage to two electrodes around the sample and measure the resulting current for tens of minutes. However, conductivity is more appropriately measured for spacecraft charging applications as the "decay" of charge deposited on the surface of an insulator. Charge decay methods expose one side of the insulator in vacuum to sequences of charged particles, light, and plasma, with a metal electrode attached to the other side of the insulator. Data are obtained by capacitive coupling to measure both the resulting voltage on the open surface and emission of electrons from the exposed surface, as well monitoring currents to the electrode. Instrumentation for both classical and charge storage decay methods has been developed and tested at Jet Propulsion Laboratory (JPL) and at Utah State University (USU). Details of the apparatus, test methods and data analysis are given here. The JPL charge storage decay chamber is a first-generation instrument, designed to make detailed measurements on only three to five samples at a time. Because samples must typically be tested for over a month, a second-generation high sample throughput charge storage decay chamber was developed at USU with the capability of testing up to 32 samples simultaneously. Details are provided about the instrumentation to measure surface charge and current; for charge deposition apparatus and control; the sample holders to properly isolate the mounted samples; the sample carousel to rotate samples into place; the control of the sample environment including sample vacuum, ambient gas, and sample temperature; and the computer control and data acquisition systems. Measurements are compared here for a number of thin film insulators using both methods at both facilities. We have found that conductivity determined from charge storage decay methods is 102 to 104 larger than values obtained from classical methods. Another Spacecraft Charging Conference presentation describes more extensive measurements made with these apparatus. This work is supported through funding from the NASA Space Environments and Effects Program and the USU Space Dynamics Laboratory Enabling Technologies Program.
Plasma parameters, such as, electron number density (ne), electron temperature (Te), y electron energy distribution function (EEDF), mean electron energy (Ee), ion number density (ni), and plasma potential (Vp), have been measured by using Langmuir probe in low-pressure (10-50 mTorr) inductively coupled CHF3/Ar and CHF3/Ar/O2 plasmas generated in the GEC cell. The measurements were made at the center of the plasma, keeping the lower electrode grounded, for various CHF3/Ar and Ar/CHF3/O2 mixtures operating at 10-50 mTorr pressures and two input RF power levels, 200 and 300 W. EEDF data show a strong Druyvesteyn distribution with relatively lower number of low energy electrons as compared to a Maxwell distribution and a large electron population with energies higher than the plasma potential. The results further show that at low CHF3 concentrations (less than 50%) the electron number density remains nearly constant with increase in pressure. At higher CHF3 concentrations, however, it decreases with increase in pressure. Plasma potential and electron temperature increase with decrease in pressure and with increase in CHF3 concentration. An analysis of the above observations and mechanisms will be presented.
Space resolved measurements for electrode in stagnation flow of arc heated plasma
The plasma-puff triggering mechanism based on a hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. The optimal fill gas pressures for the azimuthally uniform plasma-puff were about 120 mTorr less than P(opt) less than 450 Torr for He and N2. For Argon 120 mTorr less than P(opt) less than 5 Torr for argon. The inverse pinch switch was triggered with the plasma-puff and the switching capability under various electrical parameters and working gas pressures of Ar, He and N2 was determined. It was also shown that the azimuthally uniform switching discharges were dependent on the type of fill gas and its fill pressure. A new concept of plasma-focus driven plasma-puff was also discussed in comparison with hypocycloidal pinch plasma-puff triggering. The main discharge of the inverse pinch switch with the plasma-focus driven plasma-puff trigger is found to be more azimuthally uniform than that with the hypocycloidal pinch plasma-puff trigger in a gas pressure region between 80 mTorr and 1 Torr. In order to assess the effects of plasma current density on material erosion of electrodes, emissions from both an inverse-pinch plasma switch (INPIStron) and from a spark gap switch under test were studied with an optical multichannel analyzer (OMA). The color temperature of the argon plasma was approximately 4,000 K which corresponded with the peak continuum emission near 750 nm. There are the strong line emissions of argon in the 650 - 800 nm range and a lack of line emissions of copper and other solid material used in the switch. This indicates that the plasma current density during closing is low and the hot spot or hot filament in the switch is negligible. This result also indicates considerable reduction of line emission with the INPIStron switch over that of a spark-gap switch. However, a strong carbon line emission exists due to vaporization of the plastic insulator used. In order to reduce the vaporization of the insulator, the plexiglass insulating material of INPIStron was replaced with Z-9 material. A comparative study of the INPIStron and a spark gap also reveals that the INPIStron, with a low impedance of Z equals 9 ohms, can transfer a high voltage pulse with a superior pulse-shape fidelity over that of a spark gap with Z equals 100 ohms.
The plasma-puff triggering mechanism based on a hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. The optimal fill gas pressures for the azimuthally uniform plasma-puff were about 120 mTorr less than P(sub opt) less than 450 Torr for He and N2. For Argon 20 mTorr is less than P(sub opt) is less than 5 Torr. The inverse pinch switch was triggered with the plasma-puff and the switching capability under various electrical parameters and working gas pressures of Ar, He and N2 was determined. It was also shown that the azimuthally uniform switching discharges were dependent on the type of fill gas and its fill pressure. A new concept of plasma-focus driven plasma-puff was also discussed in comparison with hypocycloidal pinch plasma-puff triggering. The main discharge of the inverse pinch switch with the plasma-focus driven plasma-puff trigger is found to be more azimuthally uniform than that with the hypocycloidal pinch plasma-puff trigger in a gas pressure region between 80 mTorr and 1 Torr. In order to assess the effects of plasma current density on material erosion of electrodes, emissions from both an inverse-pinch plasma switch (INPIStron) and from a spark gap switch under test were studied with an optical multichannel analyzer (OMA). The color temperature of the argon plasma was approximately 4,000 K which corresponded with the peak continuum emission near 750 nm. There are the strong line emissions of argon in the 650 - 800 nm range and a lack of line emissions of copper and other solid material used in the switch. This indicates that the plasma current density during closing is low and the hot spot or hot filament in the switch is negligible. This result also indicates considerable reduction of line emission with the INPIStron switch over that of a spark-gap switch. However, a strong carbon line emission exists due to vaporization of the plastic insulator used. In order to reduce the vaporization of the insulator, the plexiglass insulating material of INPIStron was replaced with Z-9 material. A comparative study of the INPIStron and a spark gap also reveals that the INPIStron, with a low impedance of Z = 9 ohms, can transfer a high voltage pulse with a superior pulse-shape fidelity over that of a spark gap with Z = 100 ohms.
A compact toroid (CT) injector was developed for the C-2 device, primarily for refueling of field-reversed configurations. The CTs are formed by a magnetized coaxial plasma gun (MCPG), which consists of coaxial cylindrical electrodes and a bias coil for creating a magnetic field. First, a plasma ring is generated by a discharge between the electrodes and is accelerated by Lorenz self-force. Then, the plasma ring is captured by an interlinkage flux (poloidal flux). Finally, the fully formed CT is ejected from the MCPG. The MCPG described herein has two gas injection ports that are arranged tangentially on the outer electrode. A tungsten-coated inner electrode has a head which can be replaced with a longer one to extend the length of the acceleration region for the CT. The developed MCPG has achieved supersonic CT velocities of ∼100 km/s. Plasma parameters for electron density, electron temperature, and the number of particles are ∼5 × 10{sup 21} m{sup −3}, ∼40 eV, and 0.5–1.0 × 10{sup 19}, respectively.
In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.
An ion-ion plasma, situated between two parallel electrodes, is studied with the use of a time dependent one-dimensional particle-in-cell Monte-Carlo collisions model. This plasma consists of only positively and negatively singly charged ions with the same order of mass and temperature (the electron density is zero). The right electrode is grounded, and the left electrode is biased with a voltage waveform varying from sinusoidal to square with the frequency in the kHz to MHz range. The sheath evolution and the particle flux towards the electrodes, as a function of both space and time, are investigated for the various waveforms and frequencies. The sheath evolution has a strong influence on the time averaged ion energy distribution function (IEDF). The IEDF is broad with a low energy tail for low frequency sinusoidal biases (25 kHz) while peaked at low energy for higher frequencies (2 MHz). For square waveforms, the IEDF is mono-energetic with some broadening when the rise time is faster than the typical time to establish the steady state sheath formation (<0.3 {mu}s).
A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.
A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.