Impurity effects of annealing of radiation defects in p-type silicon
Impurity effects of annealing of radiation defects in p-type silicon, considering annealing temperature
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Impurity effects of annealing of radiation defects in p-type silicon, considering annealing temperature
Solid state ionization p-n junction detectors
The distorted wave calculations are compared with the He-4(p,d) cross section. At all four energies the theoretical description of the data is relatively poor. While the general magnitude of the cross sections is not in bad agreement, the detailed slopes of the theoretical angular distributions miss the shapes of the experimental data in a rather fundamental way.
We report a preliminary measurement of coincident neutron-proton pairs emitted at 45 degrees in the interaction of 400, 530, and 650 MeV/A neon beams incident on uranium. Charged particles were identified by time of flight and momentum, as determined in a magnetic spectrometer. Neutral particles were detected using a thick plastic scintillator, and their time of flight was measured between an entrance scintillator, triggered by a charged particle, and the neutron detector. The scatter plots and contour plots of neutron momentum vs. proton momentum appear to show a slight correlation ridge above an uncorrelated background. The projections of this plane on the n-p momentum difference axis are essentially flat, showing a one standard deviation enhancement for each of the three beams energies. At each beam energy, the calculated momentum correlation function for the neutron-proton pairs is enhanced near zero neutron-proton momentum difference by approximately one standard deviation over the expected value for no correlation. This enhancement is expected to occur as a consequence of the attractive final state interaction between the neutron and proton (i.e., virtual or "singlet" deuterons). The implications of these measurements are discussed.
Frequency response of p-i-n photodiode, taking account of mobility and nonuniform generation of carriers in i region
Optical absorption edge shift in reverse-biased p-n junction gallium arsenide semiconductor for light modulation
Effect of mechanical strain on electrical characteristics of germanium and silicon p-n junction devices
Fabrication processes and techniques for improving n on p silicon solar cells
Silicon P-N junction photodiode resistivity in vacuum ultraviolet
Effect of high energy electron irradiation on surface recombination properties of germanium p-n junction photovoltaic cells
Effects of mechanical stress on breakdown voltage of p-n junctions
Equivalence of stress and electron-irradiation induced defects in degenerate p-n germanium junctions as indicated in similar voltage-anneal characteristics
Single crystal p-type zinc antimonide in thermoelectric, thermoconductivity and electronic transport measurements
Theoretical model for effect of mechanical stress on generation-recombination currents in p-n junctions
Electron paramagnetic resonance and Hall effect measurements to determine properties of dominant paramagnetic defect in electron irradiated p-type silicon
Anomalous shift in gate threshold voltage of high transconductance p-channel MOSFETs during exposure to space-like radiation
Electron radiation effect on open geometry p channel enhancement type MOSFET gate threshold voltage, noting peaking anomaly
Adaptation of the p-dimethylaminobenzaldehyde method for determining urea concentration in urine is an improved micromechanical method. Accuracy and precision are satisfactory. This method avoids extra steps of deproteinizing or removing normal urinary chromogens.